STD5N95K5, STF5N95K5,
STP5N95K5, STU5N95K5
N-channel 950 V, 2 Ω typ., 3.5 A MDmesh™ K5
Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK
Datasheet - production data
Features
TAB
Order code
2 3
1
ID
950 V
3
TO-220FP
Ptot
70 W
STF5N95K5
TAB
1
RDS(on) max.
STD5N95K5
DPAK
2
VDS
2.5 Ω
25 W
3.5 A
STP5N95K5
70 W
STU5N95K5
70 W
3
2
TAB
1
TO-220
1
2
3
IPAK
Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
Figure 1: Internal schematic diagram
Applications
Switching applications
Description
These very high voltage N-channel Power
MOSFETs are designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Table 1: Device summary
Order code
Marking
STD5N95K5
STF5N95K5
STP5N95K5
5N95K5
STU5N95K5
January 2017
Package
Packing
DPAK
Tape and reel
TO-220FP
TO-220
Tube
IPAK
DocID024639 Rev 4
This is information on a product in full production.
1/26
www.st.com
Contents
STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ..................................................................................... 9
4
Package information ..................................................................... 10
5
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4.1
DPAK (TO-252) type A2 package information................................. 11
4.2
DPAK (TO-252) type C2 package information ................................ 14
4.3
DPAK (TO-252) packing information ............................................... 17
4.4
TO-220FP package information ...................................................... 19
4.5
TO-220 type A package information................................................ 21
4.6
IPAK (TO-251) type A package information .................................... 23
Revision history ............................................................................ 25
DocID024639 Rev 4
STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Value
Symbol
VGS
Parameter
DPAK, TO-220,
IPAK
Gate-source voltage
ID
±30
Drain current (continuous) at TC = 25 °C
ID
Unit
TO-220FP
Drain current (continuous) at TC = 100 °C
IDM(2)
Drain current pulsed
PTOT
Total dissipation at TC = 25 °C
V
3.5
3.5 (1)
A
2.2
(1)
A
2.2
14
A
25
70
W
dv/dt
(3)
Peak diode recovery voltage slope
4.5
V/ns
dv/dt
(4)
MOSFET dv/dt ruggedness
50
V/ns
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s; TC=25 °C)
VISO
Tj
2500
Operating junction temperature range
Tstg
-55 to 150
Storage temperature range
V
°C
Notes:
(1)Limited
(2)Pulse
(3)I
SD
(4)V
by maximum junction temperature.
width limited by safe operating area.
≤ 3.5 A, di/dt ≤ 100 A/μs, VDS (peak) ≤ V(BR)DSS
DS
≤ 640 V
Table 3: Thermal data
Value
Symbol
Parameter
Unit
DPAK
Rthj-case
Thermal resistance junction-case
Rthj-amb
Thermal resistance junction-ambient
Rthj-pcb
(1)
1.47
Thermal resistance junction-pcb
TO-220FP
TO-220
5
1.47
62.5
IPAK
°C/W
100
50
°C/W
°C/W
Notes:
(1)When
mounted on 1 inch² FR-4, 2 Oz copper board
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)
1
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
70
mJ
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Electrical characteristics
2
STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 5: On/off-state
Symbol
Parameter
V(BR)DSS
Drain-source breakdown voltage
Test conditions
Min.
VGS = 0 V, ID = 1 mA
950
Typ.
Max.
Unit
V
VDS = 950 V, VGS = 0 V
1
µA
IDSS
Zero gate voltage drain current
VDS = 950 V, VGS = 0 V
TC = 125 °C(1)
50
µA
IGSS
Gate body leakage current
VGS = ±20 V, VDS = 0 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
RDS(on)
Static drain-source on-resistance
VGS = 10 V, ID = 1.5 A
3
4
5
V
2
2.5
Ω
Min.
Typ.
Max.
Unit
-
220
-
pF
-
17
-
pF
-
1
-
pF
-
30
-
pF
-
11
-
pF
Notes:
(1)Defined
by design, not subject to production test.
Table 6: Dynamic
Symbol
Ciss
Parameter
Test conditions
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
Coss
Output capacitance
Crss
Reverse transfer capacitance
Co(tr)(1)
Equivalent capacitance time
related
Co(er)(2)
Equivalent capacitance energy
related
VGS = 0 V,
VDS = 0 to 760 V
Rg
Intrinsic gate resistance
f = 1 MHz open drain
-
17
-
Ω
Qg
Total gate charge
-
12.5
-
nC
Qgs
Gate-source charge
-
2
-
nC
Qgd
Gate-drain charge
VDD = 760 V, ID = 3.5 A
VGS= 10 V
(see Figure 19: "Test
circuit for gate charge
behavior")
-
10
-
nC
Notes:
(1)C
o(tr)
is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to
80% VDSS.
(2)C
o(er)
is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to
80% VDSS.
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STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
Electrical characteristics
Table 7: Switching times
Symbol
Parameter
td(on)
Turn-on delay time
tr
Rise time
td(off)
Turn-off delay time
tf
Fall time
Test conditions
Min.
Typ.
Max.
Unit
VDD= 475 V, ID = 1.75 A,
RG = 4.7 Ω
VGS = 10 V
(see Figure 18: "Test circuit for
resistive load switching times"
and Figure 23: "Switching time
waveform")
-
12
-
ns
-
16
-
ns
-
32
-
ns
-
25
-
ns
Min.
Typ.
Max.
Unit
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
ISD
Source-drain current
-
3.5
A
ISDM
Source-drain current
(pulsed)
-
14
A
VSD(1)
Forward on voltage
ISD = 3.5 A, VGS = 0 V
-
1.5
V
trr
Reverse recovery time
-
330
ns
Qrr
Reverse recovery charge
-
2.2
µC
IRRM
Reverse recovery current
ISD = 3.5 A, di/dt = 100 A/µs,
VDD = 60 V
(see Figure 20: "Test circuit
for inductive load switching
and diode recovery times")
-
13
A
ISD = 3.5 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 20: "Test circuit
for inductive load switching
and diode recovery times")
-
525
ns
-
3.2
µC
-
12
A
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
Notes:
(1)Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
Table 9: Gate-source Zener diode
Symbol
V (BR)GSO
Parameter
Gate-source breakdown voltage
Test conditions
IGS= ± 1 mA, ID= 0 A
Min
Typ.
Max
Unit
30
-
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection,thus eliminating the need for additional external componentry.
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Electrical characteristics
2.1
STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
Electrical characteristics (curves)
Figure 2: Safe operating area for DPAK and IPAK
Figure 3: Thermal impedance for DPAK and IPAK
Figure 4: Safe operating area for TO-220FP
Figure 5: Thermal impedance for TO-220FP
Figure 6: Safe operating area for TO-220
Figure 7: Thermal impedance for TO-220
CG20930
K
δ = 0.5
δ = 0.2
δ = 0.1
10-1
Z
Zthth == kk R
Rthj-C
thj-C
δδ == ttp // Ƭ
Ƭ
p
δ = 0.05
δ = 0.02
δ = 0.01
tp
SINGLE PULSE
10-2
10-5
6/26
DocID024639 Rev 4
10-4
10-3
10-2
ƬƬ
10-1
tp(s)
STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
Electrical characteristics
Figure 8: Output characteristics
Figure 9: Transfer characteristics
Figure 10: Gate charge vs gate-source voltage
Figure 11: Static drain-source on-resistance
VDD = 760 V
ID = 3.5 A
Figure 12: Capacitance variations
Figure 13: Output capacitance stored energy
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Electrical characteristics
STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
Figure 14: Normalized gate threshold voltage vs
temperature
Figure 15: Normalized V(BR)DSS vs temperature
Figure 16: Normalized on-resistance vs
temperature
Figure 17: Source-drain diode forward
characteristics
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STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
3
Test circuits
Test circuits
Figure 18: Test circuit for resistive load
switching times
Figure 19: Test circuit for gate charge
behavior
Figure 20: Test circuit for inductive load
switching and diode recovery times
Figure 21: Unclamped inductive load test
circuit
Figure 22: Unclamped inductive waveform
Figure 23: Switching time waveform
DocID024639 Rev 4
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Package information
4
STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/26
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STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
4.1
Package information
DPAK (TO-252) type A2 package information
Figure 24: DPAK (TO-252) type A2 package outline
0068772_type-A2_rev21
DocID024639 Rev 4
11/26
Package information
STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
Table 10: DPAK (TO-252) type A2 mechanical data
mm
Dim.
Min.
Max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
4.95
E
6.40
E1
5.10
5.20
5.30
e
2.16
2.28
2.40
e1
4.40
4.60
H
9.35
10.10
L
1.00
1.50
L1
2.60
2.80
3.00
L2
0.65
0.80
0.95
L4
0.60
R
V2
12/26
Typ.
5.10
5.25
6.60
1.00
0.20
0°
DocID024639 Rev 4
8°
STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
Package information
Figure 25: DPAK (TO-252) type A2 recommended footprint (dimensions are in mm)
DocID024639 Rev 4
13/26
Package information
4.2
STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
DPAK (TO-252) type C2 package information
Figure 26: DPAK (TO-252) type C2 package outline
14/26
DocID024639 Rev 4
STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
Package information
Table 11: DPAK (TO-252) type C2 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
2.20
2.30
2.38
A1
0.90
1.01
1.10
A2
0.00
0.10
b
0.72
0.85
b4
5.13
c
0.47
0.60
c2
0.47
0.60
D
6.00
D1
5.10
E
6.50
E1
5.20
e
2.186
2.286
2.386
H
9.80
10.10
10.40
L
1.40
1.50
1.70
L1
L2
6.10
5.46
6.20
5.60
6.60
6.70
5.50
2.90 REF
0.90
L3
L4
5.33
1.25
0.51 BSC
0.60
L6
0.80
1.00
1.80 BSC
θ1
5°
7°
9°
θ2
5°
7°
9°
V2
0°
DocID024639 Rev 4
8°
15/26
Package information
STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
Figure 27: DPAK (TO-252) type C2 recommended footprint (dimensions are in mm)
FP_0068772_21
16/26
DocID024639 Rev 4
STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
4.3
Package information
DPAK (TO-252) packing information
Figure 28: DPAK (TO-252) tape outline
DocID024639 Rev 4
17/26
Package information
STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
Figure 29: DPAK (TO-252) reel outline
Table 12: DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
6.8
7
A
B0
10.4
10.6
B
1.5
12.1
C
12.8
1.6
D
20.2
G
16.4
50
B1
18/26
Min.
Max.
330
13.2
D
1.5
D1
1.5
E
1.65
1.85
N
F
7.4
7.6
T
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
DocID024639 Rev 4
18.4
22.4
STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
4.4
Package information
TO-220FP package information
Figure 30: TO-220FP package outline
DocID024639 Rev 4
19/26
Package information
STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
Table 13: TO-220FP package mechanical data
mm
Dim.
Min.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
20/26
Typ.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
DocID024639 Rev 4
STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
4.5
Package information
TO-220 type A package information
Figure 31: TO-220 type A package outline
DocID024639 Rev 4
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Package information
STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
Table 14: TO-220 type A mechanical data
mm
Dim.
Min.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.55
c
0.48
0.70
D
15.25
D1
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Typ.
15.75
1.27
E
10.00
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13.00
14.00
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
DocID024639 Rev 4
STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
4.6
Package information
IPAK (TO-251) type A package information
Figure 32: IPAK (TO-251) type A package outline
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Package information
STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
Table 15: IPAK (TO-251) type A package mechanical data
mm
Dim.
Min.
Typ.
2.20
2.40
A1
0.90
1.10
b
0.64
0.90
b2
b4
0.95
5.20
B5
5.40
0.30
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
E
6.40
6.60
e
e1
2.28
4.40
H
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Max.
A
4.60
16.10
L
9.00
9.40
L1
0.80
1.20
L2
0.80
V1
10°
DocID024639 Rev 4
1.00
STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
5
Revision history
Revision history
Table 16: Document revision history
Date
Revision
08-May-2013
1
First release.
18-Sep-2013
2
Document status promoted from preliminary to production data.
Added Section 2.1: Electrical characteristics (curves).
Updated DPAK mechanical data.
25-Sep-2013
3
Inserted Figure 17: Source-drain diode forward characteristics.
4
Added IPAK package.
Modified title, features and description on cover page.
Modified Table 2: "Absolute maximum ratings", Table 3: "Thermal
data", Table 5: "On/off-state".
Modified Figure 11: "Static drain-source on-resistance".
Updated Section 4: "Package information".
Minor text changes.
04-Jan-2017
Changes
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STD5N95K5, STF5N95K5, STP5N95K5,
STU5N95K5
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