STF5NK100Z

STP5NK100Z, STF5NK100Z STW5NK100Z N-channel 1000 V, 2.7 Ω, 3.5 A, TO-220, TO-220FP, TO-247 SuperMESH3™ Power MOSFET Features Type VDSS (@TJMAX) RDS(on)max ID STF5NK100Z 1000 V < 3.7 Ω 3.5 A STP5NK100Z 1000 V < 3.7 Ω 3.5 A STW5NK100Z 1000 V < 3.7 Ω 3.5 A 3 ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatibility 1 TO-220 2 TO-220FP 2 3 1 TO-247 Applications ■ Figure 1. Switching application Internal schematic diagram D(2) Description The new SuperMESH™ series of Power MOSFETS is the result of further design improvements on ST's well-established stripbased PowerMESH™ layout. In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH™ devices further complement an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmesh™ products. Table 1. G(1) S(3) AM01476v1 Device summary Order code Marking Package Packaging STF5NK100Z F5NK100Z TO-220FP Tube STP5NK100Z P5NK100Z TO-220 Tube STW5NK100Z W5NK100Z TO-247 Tube May 2009 Doc ID 10850 Rev 5 1/15 www.st.com 15 Contents STP5NK100Z, STF5NK100Z, STW5NK100Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 ................................................ 9 Doc ID 10850 Rev 5 STP5NK100Z, STF5NK100Z, STW5NK100Z 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220, TO-247 TO-220FP VDS Drain-source voltage (VGS = 0) 1000 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 3.5 3.5 (1) A ID Drain current (continuous) at TC=100°C 2.2 2.2 (1) A IDM(2) Drain current (pulsed) 14 14 (1) A PTOT Total dissipation at TC = 25°C 125 30 W 1 0.24 W/°C Derating factor VESD(G-S) dv/dt (3) VISO TJ Tstg Gate source ESD (HBM-C=100pF, R=1.5 kΩ) Peak diode recovery voltage slope 4000 V 4.5 V/ns Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; Tc= 25°C) 2500 Operating junction temperature Storage temperature -55 to 150 V °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 3.5 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Table 3. Thermal data Value Symbol Rthj-case Parameter Unit TO-220, TO-247 TO-220FP 1 4.2 Thermal resistance junction-case max °C/W Rthj-a Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 4. Symbol Avalanche characteristics Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by TJMAX) 3.5 A EAS Single pulse avalanche energy (starting Tj=25 °C, Id=Iar, Vdd=50 V) 250 mJ Doc ID 10850 Rev 5 3/15 Electrical characteristics 2 STP5NK100Z, STF5NK100Z, STW5NK100Z Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating, Tc = 125 °C IGSS Gate body leakage current VGS = ± 20 V (VGS = 0) V(BR)DSS VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 1.75 A Table 6. Symbol Min. Typ. Max. Unit 1000 V 1 50 µA µA ±10 µA 3.75 4.5 V 2.7 3.7 Ω Min. Typ. Max. Unit - 4 S pF pF pF 3 Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS =15 V, ID = 1.75 A Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 - 1154 106 21.3 Equivalent output capacitance VGS=0, VDS =0 V to 800 V - 46.8 pF td(on) tr td(off) tf Turn-on delay time Rise time Off-voltage rise time Fall time VDD=500 V, ID= 1.75 A, RG=4.7 Ω, VGS=10 V (see Figure 21) - 22.5 7.7 51.5 19 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=800 V, ID = 3.5 A VGS =10 V (see Figure 22) - 42 7.3 21.7 Cosseq(2) 59 nC nC nC 1. Pulsed: pulse duration=300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/15 Doc ID 10850 Rev 5 STP5NK100Z, STF5NK100Z, STW5NK100Z Table 7. Symbol ISD Electrical characteristics Source drain diode Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 3.5 A ISDM(1) Source-drain current (pulsed) - 14 A VSD(2) Forward on voltage ISD= 3.5 A, VGS=0 - 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 3.5 A, di/dt = 100 A/µs, VDD=30 V (see Figure 23) - 605 3.09 10.5 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 3.5 A, di/dt = 100 A/µs, VDD=35 V, Tj=150 °C (see Figure 23) - 742 4.2 11.2 ns µC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% Table 8. Symbol BVGSO Gate-source Zener diode Parameter Test conditions Gate-source breakdown voltage Igs=± 1 mA (open drain) Min. 30 Typ. Max. Unit V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 10850 Rev 5 5/15 Electrical characteristics STP5NK100Z, STF5NK100Z, STW5NK100Z 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220 Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 6/15 Doc ID 10850 Rev 5 STP5NK100Z, STF5NK100Z, STW5NK100Z Figure 8. Output characteristics Figure 10. Transconductance Electrical characteristics Figure 9. Transfer characteristics Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Doc ID 10850 Rev 5 7/15 Electrical characteristics STP5NK100Z, STF5NK100Z, STW5NK100Z Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVdss vs temperature Figure 18. Maximum avalanche energy vs temperature 8/15 Doc ID 10850 Rev 5 STP5NK100Z, STF5NK100Z, STW5NK100Z 3 Test circuits Test circuits Figure 19. Unclamped inductive load test circuit Figure 20. Unclamped inductive waveform Figure 21. Switching times test circuit for resistive load Figure 22. Gate charge test circuit Figure 23. Test circuit for inductive load switching and diode recovery times Doc ID 10850 Rev 5 9/15 Package mechanical data 4 STP5NK100Z, STF5NK100Z, STW5NK100Z Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/15 Doc ID 10850 Rev 5 STP5NK100Z, STF5NK100Z, STW5NK100Z Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.5 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_J Doc ID 10850 Rev 5 11/15 Package mechanical data STP5NK100Z, STF5NK100Z, STW5NK100Z TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 12/15 Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 Doc ID 10850 Rev 5 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.147 0.104 0.151 0.116 STP5NK100Z, STF5NK100Z, STW5NK100Z Package mechanical data TO-247 Mechanical data mm. Dim. A Min. 4.85 Typ Max. 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 øR 4.50 3.65 5.50 S 5.50 Doc ID 10850 Rev 5 13/15 Revision history 5 STP5NK100Z, STF5NK100Z, STW5NK100Z Revision history Table 9. 14/15 Document revision history Date Revision Changes 12-Oct-2004 1 First release 08-Sep-2005 2 Complete datasheet 16-Dec-2005 3 Inserted ecopack indication 16-Aug-2006 4 New template, no content change 15-May-2009 5 Modified: Section 2.1: Electrical characteristics (curves) Doc ID 10850 Rev 5 STP5NK100Z, STF5NK100Z, STW5NK100Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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