STF6N52K3

STD6N52K3 Datasheet N-channel 525 V, 1 Ω typ., 6.5 A MDmesh™ K3 Power MOSFET in DPAK package Features TAB 2 3 1 • • • • • DPAK D(2, TAB) Order codes VDS RDS(on) max. ID PTOT STD6N52K3 525 V 1.2 Ω 5A 70 W 100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Applications G(1) • S(3) AM01475V1 Switching applications Description This MDmesh™ K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. Product status link STD6N52K3 Product summary Order code STD6N52K3 Marking 6N52K3 Package DPAK Packing Tape and reel DS5919 - Rev 3 - September 2018 For further information contact your local STMicroelectronics sales office. www.st.com STD6N52K3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VGS Parameter Gate- source voltage Value Unit ±30 V ID Drain current (continuous) at TC = 25 °C 5 A ID Drain current (continuous) at TC = 100 °C 3 A IDM (1) Drain current (pulsed) 20 A PTOT Total dissipation at TC = 25 °C 70 W Avalanche current, repetitive or not-repetitive 2.5 A Single pulse avalanche energy 110 mJ Peak diode recovery voltage slope 12 V/ns -55 to 150 °C Value Unit IAR EAS (2) dv/dt (3) Tstg Tj Storage temperature range Operating junction temperature range 1. Pulse width limited by safe operating area. 2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V. 3. ISD ≤ 5 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS, VDS peak ≤ V(BR)DSS. Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case 1.79 °C/W Rthj-pcb (1) Thermal resistance junction-pcb 50 °C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu. DS5919 - Rev 3 page 2/18 STD6N52K3 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 3. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 V Min. Typ. Max. 525 Unit V VGS = 0 V, VDS = 525 V 1 µA VGS = 0 V, VDS = 525 V TC = 125 °C (1) 50 µA ±10 µA 3.75 4.5 V 1 1.2 Ω Typ. Max. Unit - pF IDSS Zero gate voltage drain current IGSS Gate body leakage current VGS = ±20 V, VDS = 0 V VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 2.5 A 3 1. Defined by design, not subject to production test. Table 4. Dynamic Symbol Ciss Parameter Test conditions Min. Input capacitance 670 VDS = 50 V, f = 1 MHz, VGS = 0 V Coss Output capacitance Crss Reverse transfer capacitance Coss eq. (1) Equivalent output capacitance VGS = 0 V, VDS = 0 to 420 V RG Intrinsic gate resistance f = 1 MHz open drain Qg Total gate charge VDD = 420 V, ID = 5 A, Qgs Gate-source charge Qgd Gate-drain charge VGS = 0 to 10 V (see Figure 15. Test circuit for gate charge behavior) - 54 10 40 - 4 pF - Ω - nC 26 - 4 15 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 5. Switching times Symbol td(on) tr td(off) tf DS5919 - Rev 3 Parameter Test conditions Turn-on delay time VDD = 260 V, ID = 2.5 A, Rise time RG = 4.7 Ω, VGS = 10 V Turn-off delay time (see Figure 14. Test circuit for resistive load switching times and Figure 19. Switching time waveform) Fall time Min. Typ. Max. Unit - ns 10 11 - 31 18 page 3/18 STD6N52K3 Electrical characteristics Table 6. Source drain diode Symbol ISD Parameter Test conditions Min. Source-drain current Typ. Max. 5 - ISDM (1) Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 5 A, VGS = 0 V trr Reverse recovery time ISD = 5 A, di/dt = 100 A/µs Qrr Reverse recovery charge IRRM Reverse recovery current VDD = 60 V (see Figure 16. Test circuit for inductive load switching and diode recovery times) trr Reverse recovery time ISD = 5 A, di/dt = 100 A/µs Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C IRRM Reverse recovery current (see Figure 16. Test circuit for inductive load switching and diode recovery times) 20 - - - 1.5 Unit A V 206 ns 1.4 μC 14 A 233 ns 1.7 μC 15 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. Table 7. Gate-source Zener diode Symbol V(BR)GSO Parameter Gate-source breakdown voltage Test conditions ID = 0 A, IGS = ±1 mA Min. ±30 Typ. Max. - Unit V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. DS5919 - Rev 3 page 4/18 STD6N52K3 Electrical characteristics curves 2.1 Electrical characteristics curves Figure 2. Thermal impedance Figure 1. Safe operating area AM08855v1 ID (A) GC20460 K 10µs 10 is in th n m tio by ra pe e d O im it L 1 ea ) a r S (on D R ax 100µs is 100 1ms 10ms 10-1 0.1 Tj=150°C Tc=25°C S ingle puls e 0.01 0.1 10 1 100 VDS (V) 10-2 10-5 Figure 3. Output characteristics AM08856v1 ID (A) VGS =10V 10-4 10-3 10-2 10-1 tp (s) Figure 4. Transfer characteristics AM08857v1 ID (A) 7 10 VDS =15V 6 7V 8 5 6 4 6V 3 4 2 2 0 1 5V 5 0 10 15 20 25 VDS (V) Figure 5. Gate charge vs gate-source voltage VGS AM08858v1 VDD=420V ID=5A 12 DS VD S 350 2 4 8 6 VGS (V) Figure 6. Static drain-source on resistance AM08859v1 R DS (on) (Ω) 1.3 3 8 250 6 1.2 VGS =10V 1.1 150 4 2 DS5919 - Rev 3 0 1.4 10 0 0 50 0 10 30 Qg 1.0 0.9 0.8 0 1 2 3 4 ID(A) page 5/18 STD6N52K3 Electrical characteristics curves Figure 7. Capacitance variations Figure 8. Output capacitance stored energy AM08860v1 C (pF) AM08861v1 E os s (µJ ) 4.0 1000 Cis s 3.5 3.0 2.5 100 2.0 Cos s 10 Crs s 1.5 1.0 0.5 1 0.1 1 100 10 VDS (V) Figure 9. Normalized gate threshold voltage vs temperature AM08862v1 VGS (th) (norm) 1.10 0 0 100 200 300 400 500 600 VDS (V) Figure 10. Normalized on resistance vs temperature AM08863v1 R DS (on) (norm) 2.5 2.0 1.00 VGS=10V ID =50µA 1.5 0.90 1.0 0.80 0.5 0.70 -75 25 -25 75 TJ (°C) 125 Figure 11. Source-drain diode forward characteristics AM08865v1 VS D (V) TJ =-50°C 0.9 0 -75 -25 25 75 125 TJ (°C) Figure 12. Normalized V(BR)DSS vs temperature AM08864v1 V(BR)DSS (norm) 1.10 0.8 TJ =25°C 1.05 0.7 0.6 1.00 0.5 0.3 0.95 TJ =150°C 0.4 0 DS5919 - Rev 3 1 2 3 4 5 6 7 8 IS D(A) 0.90 -75 -25 25 75 125 TJ (°C) page 6/18 STD6N52K3 Electrical characteristics curves Figure 13. Maximum avalanche energy vs temperature AM08866v1 E AS (mJ ) ID=2.5A VDD=50 V 110 100 90 80 70 60 50 40 30 20 10 0 0 DS5919 - Rev 3 20 40 60 80 100 120 140 TJ (°C) page 7/18 STD6N52K3 Test circuits 3 Test circuits Figure 14. Test circuit for resistive load switching times Figure 15. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 16. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 17. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 19. Switching time waveform Figure 18. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS5919 - Rev 3 page 8/18 STD6N52K3 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS5919 - Rev 3 page 9/18 STD6N52K3 DPAK (TO-252) type A package information 4.1 DPAK (TO-252) type A package information Figure 20. DPAK (TO-252) type A package outline 0068772_A_25 DS5919 - Rev 3 page 10/18 STD6N52K3 DPAK (TO-252) type A package information Table 8. DPAK (TO-252) type A mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 4.60 4.70 4.80 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS5919 - Rev 3 Typ. 5.10 5.25 6.60 1.00 0.20 0° 8° page 11/18 STD6N52K3 DPAK (TO-252) type E package information 4.2 DPAK (TO-252) type E package information Figure 21. DPAK (TO-252) type E package outline 0068772_type-E_rev.25 DS5919 - Rev 3 page 12/18 STD6N52K3 DPAK (TO-252) type E package information Table 9. DPAK (TO-252) type E mechanical data Dim. A mm Min. Typ. Max. 2.18 2.39 A2 0.13 b 0.65 0.884 b4 4.95 5.46 c 0.46 0.61 c2 0.46 0.60 D 5.97 6.22 D1 5.21 E 6.35 E1 4.32 6.73 e 2.286 e1 4.572 H 9.94 10.34 L 1.50 1.78 L1 L2 2.74 0.89 L4 1.27 1.02 Figure 22. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_25 DS5919 - Rev 3 page 13/18 STD6N52K3 DPAK (TO-252) packing information 4.3 DPAK (TO-252) packing information Figure 23. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DS5919 - Rev 3 page 14/18 STD6N52K3 DPAK (TO-252) packing information Figure 24. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 10. DPAK (TO-252) tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 DS5919 - Rev 3 Reel Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 page 15/18 STD6N52K3 Revision history Table 11. Document revision history Date Revision 03-Sep-2008 1 Changes Initial release. – Added new package, mechanical data: D²PAK; 21-Feb-2011 2 – Added new package, mechanical data: TO-220; – Document status promoted from preliminary data to datasheet. The part numbers STB6N52K3, STF6N52K3 and STP6N52K3 have been moved to a separate datasheet. Removed maturity status indication from cover page. The document status is production data. 05-Sep-2018 3 Updated title and features in cover page. Updated Section 1 Electrical ratings, Section 2 Electrical characteristics and Section 4 Package information. Minor text changes. DS5919 - Rev 3 page 16/18 STD6N52K3 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.1 DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 DPAK (TO-252) type E package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.3 DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 DS5919 - Rev 3 page 17/18 STD6N52K3 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS5919 - Rev 3 page 18/18