STF6N60DM2

STF6N60DM2 Datasheet N-channel 600 V, 0.95 Ω typ., 5 A MDmesh™ DM2 Power MOSFET in a TO-220FP package Features 1 2 3 TO-220FP D(2) G(1) • • • • • • Order code VDS RDS(on) max. ID PTOT STF6N60DM2 600 V 1.10 Ω 5A 20 W Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications • S(3) AM15572v1_no_tab Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status link STF6N60DM2 Product summary Order code STF6N60DM2 Marking 6N60DM2 Package TO-220FP Packing Tube DS12220 - Rev 3 - March 2020 For further information contact your local STMicroelectronics sales office. www.st.com STF6N60DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VGS Parameter Gate-source voltage Value Unit ±25 V Drain current (continuous) at Tcase = 25 °C 5 Drain current (continuous) at Tcase = 100 °C 3.2 IDM (1) Drain current (pulsed) 20 A PTOT Total power dissipation at Tcase = 25 °C 20 W dv/dt(2) Peak diode recovery voltage slope 50 dv/dt(3) MOSFET dv/dt ruggedness 50 VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) 2.5 kV Tstg Storage temperature range -55 to 150 °C ID Tj Operating junction temperature range A V/ns 1. Pulse width is limited by safe operating area. 2. ISD ≤ 5 A, di/dt= 900 A/μs; VDS peak < V(BR)DSS, VDD = 480 V. 3. VDS ≤ 480 V. Table 2. Thermal data Symbol Parameter Value Rthj-case Thermal resistance junction-case 6.25 Rthj-amb Thermal resistance junction-ambient 62.5 Unit °C/W Table 3. Avalanche characteristics Symbol IAR (1) EAS (2) Parameter Value Unit Avalanche current, repetitive or not repetitive 1.7 A Single pulse avalanche energy 132 mJ 1. Pulse width limited by Tjmax. 2. starting Tj = 25 °C, ID = IAR, VDD = 50 V. DS12220 - Rev 3 page 2/12 STF6N60DM2 Electrical characteristics 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Static Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions VGS = 0 V, ID = 1 mA Min. Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 1 VGS = 0 V, VDS = 600 V, Tcase = 125 °C (1) 100 ±5 µA 4 4.75 V 0.95 1.10 Ω Unit IDSS Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onresistance VGS = 10 V, ID = 2.5 A 3.25 µA 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Min. Typ. Max. - 274 - - 15 - Reverse transfer capacitance - 2 - Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 25 - pF - 6.5 - Ω - 6.2 - - 1.8 - - 2.7 - Ciss Input capacitance Coss Output capacitance Crss Coss eq. (1) RG Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 V f = 1 MHz, ID = 0 A VDD = 480 V, ID = 5 A, VGS = 0 to 10 V (see Figure 14. Test circuit for gate charge behavior) pF nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS12220 - Rev 3 Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 2.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) Min. Typ. Max. - 9.2 - - 5.6 - - 12 - - 19.6 - Unit ns page 3/12 STF6N60DM2 Electrical characteristics Table 7. Source-drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 5 A ISDM (1) Source-drain current (pulsed) - 20 A VSD (2) Forward on voltage VGS = 0 V, ISD = 5 A - 1.6 V trr Reverse recovery time - 60 ns Qrr Reverse recovery charge - 135 nC IRRM Reverse recovery current ISD = 5 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 4.5 A ISD = 5 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 132 ns - 429 nC - 6.5 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current 1. Pulse width is limited by safe operating area. 2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DS12220 - Rev 3 page 4/12 STF6N60DM2 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Thermal impedance Figure 1. Safe operating area K GIPG300620171244SOA ID (A) Operation in this area is limited by R DS(on) GC20940 10-1 10 1 tp =10 µs 10 0 tp =100 µs T j ≤150 °C T c = 25°C single pulse 10 -1 10 -1 10 0 10 1 10-2 tp =1 ms tp =10 ms VDS (V) 10 2 10-3 10-4 Figure 3. Output characteristics ID (A) 10-1 ID (A) VGS = 8 V 8 10-2 100 tp (s) Figure 4. Transfer characteristics GIPD200620171223OCH VGS = 9, 10 V 10-3 GIPD200620171234TCH VDS = 20 V 8 VGS = 7 V 6 6 4 4 VGS = 6 V 2 2 VGS = 5 V 0 0 4 8 12 16 20 VDS (V) Figure 5. Gate charge vs gate-source voltage VGS (V) GIPD200620171351QVG VDS (V) VDD = 480 V ID = 5 A 12 10 600 500 VDS 0 4 5 6 7 8 VGS (V) Figure 6. Static drain-source on-resistance RDS(on) (Ω) GIPD200620171401RID 1.01 VGS = 10 V 0.99 8 400 6 300 4 200 2 100 0.93 0 Qg (nC) 0.91 0 0.97 0 0 DS12220 - Rev 3 1 2 3 4 5 6 7 0.95 1 2 3 4 5 ID (A) page 5/12 STF6N60DM2 Electrical characteristics (curves) Figure 7. Capacitance variations C (pF) Figure 8. Output capacitance stored energy EOSS (µJ) GIPD200620171408CVR GIPD270620171145EOS 2 10 3 1.6 CISS 10 2 1.2 0.8 10 1 COSS CRSS 10 0 10 -1 10 0 10 1 VDS (V) 10 2 Figure 9. Normalized gate threshold voltage vs temperature VGS(th) (norm.) GIPD200620171427VTH ID = 250 µA 1.1 0.4 0 0 100 200 300 400 500 600 VDS (V) Figure 10. Normalized on-resistance vs temperature RDS(on) (norm.) GIPD200620171437RON 2.5 1 2 VGS = 10 V 0.9 1.5 0.8 1 0.7 0.5 0.6 -75 -25 25 75 125 Figure 11. Source-drain diode forward characteristics VSD (V) GIPD200620171441SDF Tj = -50 °C 1.1 0 -75 Tj (°C) -25 25 75 125 Tj (°C) Figure 12. Normalized V(BR)DSS vs temperature VGS(th) (norm.) GIPD200620171444VTH 1.1 1 ID = 1 mA 1.05 Tj = 25 °C 0.9 1 0.8 Tj = 150 °C 0.95 0.7 0.9 0.6 0.5 0 DS12220 - Rev 3 1 2 3 4 5 ISD (A) 0.85 -75 -25 25 75 125 Tj (°C) page 6/12 STF6N60DM2 Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 16. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 18. Switching time waveform Figure 17. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS12220 - Rev 3 page 7/12 STF6N60DM2 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-220FP package information Figure 19. TO-220FP package outline 7012510_Rev_13_B DS12220 - Rev 3 page 8/12 STF6N60DM2 TO-220FP package information Table 8. TO-220FP package mechanical data Dim. mm Min. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 E 0.45 0.70 F 0.75 1.00 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.20 G1 2.40 2.70 H 10.00 10.40 L2 DS12220 - Rev 3 Typ. 16.00 L3 28.60 30.60 L4 9.80 10.60 L5 2.90 3.60 L6 15.90 16.40 L7 9.00 9.30 Dia 3.00 3.20 page 9/12 STF6N60DM2 Revision history Table 9. Document revision history DS12220 - Rev 3 Date Version Changes 03-Jul-2017 1 First release 12-Jun-2018 2 Updated Table 1. Absolute maximum ratings, Table 2. Thermal data and Table 5. Dynamic. 16-Mar-2020 3 Updated Section Features. Minor text change to improve the readability. page 10/12 STF6N60DM2 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 DS12220 - Rev 3 page 11/12 STF6N60DM2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS12220 - Rev 3 page 12/12