STF6N65M2

STF6N65M2, STP6N65M2, STU6N65M2 N-channel 650 V, 1.2 Ω typ., 4 A MDmesh™ M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages Datasheet - preliminary data Features TAB Order codes VDS RDS(on) max ID 650 V 1.35 Ω 4A STF6N65M2 1 2 3 3 1 TO-220FP 2 STP6N65M2 STU6N65M2 TO-220 • Extremely low gate charge TAB • Excellent output capacitance (COSS) profile 3 • 100% avalanche tested 2 1 IPAK • Zener-protected Figure 1. Internal schematic diagram Applications , TAB • Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. AM15572v1 Table 1. Device summary Order codes Marking STF6N65M2 STP6N65M2 Package TO-220FP 6N65M2 TO-220 STU6N65M2 August 2014 Packaging Tube IPAK DocID026776 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/18 www.st.com Contents STF6N65M2, STP6N65M2, STU6N65M2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 2/18 4.1 TO-220FP, STF6N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 TO-220, STP6N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3 IPAK, STU6N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 DocID026776 Rev 1 STF6N65M2, STP6N65M2, STU6N65M2 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220FP VGS Gate-source voltage ± 25 ID Drain current (continuous) at TC = 25 °C 4 ID Drain current (continuous) at TC = 100 °C IDM (2) Drain current (pulsed) Total dissipation at TC = 25 °C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC=25 °C) dv/dt (4) Tstg Tj V (1) 4 A 2.5(1) 2.5 A (1) 16 A 60 W 16 PTOT dv/dt(3) TO-220, IPAK 20 2500 V Peak diode recovery voltage slope 15 MOSFET dv/dt ruggedness 50 V/ns Storage temperature - 55 to 150 °C Max. operating junction temperature 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 4 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V 4. VDS ≤ 520V Table 3. Thermal data Value Symbol Parameter Unit TO-220FP Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max TO-220 6.25 IPAK 2.08 62.5 °C/W 100 °C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 0.5 A EAS Single pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD=50) 100 mJ DocID026776 Rev 1 3/18 18 Electrical characteristics 2 STF6N65M2, STP6N65M2, STU6N65M2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage IDSS Zero gate voltage drain current IGSS Gate-body leakage current Test conditions VGS = 0, ID = 1 mA Min. Typ. Max. Unit 650 V VGS = 0, VDS = 650 V 1 µA VGS = 0, VDS = 650 V, TC=125 °C 100 µA VDS = 0, VGS = ± 25 V ±10 µA 3 4 V 1.2 1.35 Ω Min. Typ. Max. Unit - 226 - pF - 12.8 - pF - 0.65 - pF VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance 2 VGS = 10 V, ID = 2 A Table 6. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VGS = 0, VDS = 0 to 520 V - 114 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 6.5 - Ω Qg Total gate charge - 9.8 - nC Qgs Gate-source charge - 1.7 - nC Qgd Gate-drain charge VDD = 520 V, ID = 4 A, VGS = 10 V (see Figure 8) - 4 - nC VGS = 0, VDS = 100 V, f = 1 MHz 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Switching times Symbol td(on) tr td(off) tf 4/18 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 325 V, ID = 2 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15 and Figure 20) Fall time DocID026776 Rev 1 Min. Typ. Max. Unit - 19 - ns - 7 - ns - 6.5 - ns - 20 - ns STF6N65M2, STP6N65M2, STU6N65M2 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 4 A ISDM (1) Source-drain current (pulsed) - 16 A VSD (2) Forward on voltage - 1.6 V ISD trr ISD = 4 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 4 A, di/dt = 100 A/µs VDD = 60 V (see Figure 17) ISD = 4 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 17) - 260 ns - 1.2 µC - 9.2 A - 400 ns - 1.84 µC - 9.1 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID026776 Rev 1 5/18 18 Electrical characteristics 2.1 STF6N65M2, STP6N65M2, STU6N65M2 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP *,3*6$ ,' $  LV HD  DU 6RQ ' WK 5 LQ D[ Q LR \P W UD E SH HG 2 LPLW /  LV  —V —V PV PV  7M ƒ& 7F ƒ& 6LQJOHSXOVH     9'69  Figure 4. Safe operating area for TO-220 and IPAK Figure 5. Thermal impedance for TO-220 and IPAK *,3*6$ ,' $  LV HD  DU 6RQ ' WK 5 LQ D[ Q LR \P W UD E SH HG 2 LPLW / —V —V  LV  PV PV  7M ƒ& 7F ƒ& 6LQJOHSXOVH     9'69  Figure 6. Output characteristics Figure 7. Transfer characteristics *,3*6$ ,' $ 9*6 9  9 9         9   6/18 9'6 9     *,3*6$ ,' $      9'69 DocID026776 Rev 1        9*69 STF6N65M2, STP6N65M2, STU6N65M2 Electrical characteristics Figure 8. Gate charge vs gate-source voltage *,3*6$ 9'6 9*6 9 9'6  9 9'' 9 ,' $ *,3*6$ 5'6RQ ȍ 9*6 9                   Figure 9. Static drain-source on-resistance         4JQ& Figure 10. Capacitance variations      ,'$ Figure 11. Normalized gate threshold voltage vs temperature *,3*6$ & S)  *,3*6$ 9*6WK QRUP ,' —$   &LVV   &RVV       &UVV    9'69 Figure 12. Normalized on-resistance vs temperature *,3*6$ 5'6RQ       7-ƒ& Figure 13. Normalized V(BR)DSS vs temperature *,3*6$ 9%5'66 QRUP QRUP 9*6 9                  7-ƒ&   DocID026776 Rev 1 ,' P$     7-ƒ& 7/18 18 Electrical characteristics STF6N65M2, STP6N65M2, STU6N65M2 Figure 14. Source-drain diode forward characteristics *,3*6$ 96' 9  7- ƒ&      7- ƒ&  7- ƒ&      8/18       ,6'$ DocID026776 Rev 1 STF6N65M2, STP6N65M2, STU6N65M2 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01469v1 AM01468v1 Figure 17. Test circuit for inductive load switching and diode recovery times A A Figure 18. Unclamped inductive load test circuit L A D G FAST DIODE D.U.T. S 3.3 μF B B B VD L=100μH 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform ton 9%5'66 tdon 9' toff tr tdoff tf 90% 90% ,'0 10% ,' 9'' 10% 0 9'' VDS 90% VGS $0Y 0 DocID026776 Rev 1 10% AM01473v1 9/18 18 Package mechanical data 4 STF6N65M2, STP6N65M2, STU6N65M2 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/18 DocID026776 Rev 1 STF6N65M2, STP6N65M2, STU6N65M2 4.1 Package mechanical data TO-220FP, STF6N65M2 Figure 21. TO-220FP drawing 7012510_Rev_K_B DocID026776 Rev 1 11/18 18 Package mechanical data STF6N65M2, STP6N65M2, STU6N65M2 Table 9. TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 12/18 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Ø 3 3.2 DocID026776 Rev 1 STF6N65M2, STP6N65M2, STU6N65M2 4.2 Package mechanical data TO-220, STP6N65M2 Figure 22. TO-220 type A drawing BW\SH$B5HYB7 DocID026776 Rev 1 13/18 18 Package mechanical data STF6N65M2, STP6N65M2, STU6N65M2 Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 14/18 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ØP 3.75 3.85 Q 2.65 2.95 DocID026776 Rev 1 STF6N65M2, STP6N65M2, STU6N65M2 4.3 Package mechanical data IPAK, STU6N65M2 Figure 23. IPAK (TO-251) drawing 0068771_K DocID026776 Rev 1 15/18 18 Package mechanical data STF6N65M2, STP6N65M2, STU6N65M2 Table 11. IPAK (TO-251) mechanical data mm. DIM min. typ. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H 16/18 max. 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° DocID026776 Rev 1 1.00 STF6N65M2, STP6N65M2, STU6N65M2 5 Revision history Revision history Table 12. Document revision history Date Revision 04-Aug-2014 1 Changes First release. DocID026776 Rev 1 17/18 18 STF6N65M2, STP6N65M2, STU6N65M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved 18/18 DocID026776 Rev 1