STF9N60M2

STF9N60M2, STFI9N60M2 N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data Features Order codes STF9N60M2 STFI9N60M2 1 2 RDS(on) max ID 650 V 0.78 Ω 5.5 A • Extremely low gate charge 3 TO-220FP VDS @ TJmax 1 2 I2PAKFP • Lower RDS(on) x area vs previous generation 3 (TO-281) • Low gate input resistance • 100% avalanche tested • Zener-protected Applications Figure 1. Internal schematic diagram • Switching applications Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. AM15572v1 . Table 1. Device summary Order codes Marking STF9N60M2 March 2014 This is information on a product in full production. Packaging TO-220FP 9N60M2 STFI9N60M2 Package I2PAKFP DocID024728 Rev 2 Tube 1/15 www.st.com Contents STF9N60M2, STFI9N60M2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/15 .............................................. 8 DocID024728 Rev 2 STF9N60M2, STFI9N60M2 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit ± 25 V (1) A Drain current (continuous) at TC = 100 °C (1) 3.6 A IDM (1) Drain current (pulsed) 22(1) A PTOT Total dissipation at TC = 25 °C 20 W VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC=25 °C) 2500 V VGS ID ID Parameter Gate-source voltage Drain current (continuous) at TC = 25 °C 5.5 dv/dt (2) Peak diode recovery voltage slope 15 dv/dt(3) MOSFET dv/dt ruggedness 50 Tstg Tj V/ns Storage temperature - 55 to 150 °C Max. operating junction temperature 150 1. Pulse width limited by safe operating area. 2. ISD ≤ 5.5 A, di/dt ≤ 400 A/µs; V DS peak < V(BR)DSS, VDD=400 V 3. VDS ≤ 480 V Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 6.25 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Value Unit 2 A 105 mJ Table 4. Avalanche characteristics Symbol Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) EAS Single pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD=50) DocID024728 Rev 2 3/15 15 Electrical characteristics 2 STF9N60M2, STFI9N60M2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 IDSS VDS = 600 V Zero gate voltage drain current (VGS = 0) VDS = 600 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Min. Typ. Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance Unit 600 V 1 µA 100 µA ±10 µA 3 4 V 0.72 0.78 Ω Min. Typ. Max. Unit - 320 - pF - 18 - pF - 0.68 - pF VGS = ± 25 V VGS(th) Max. 2 VGS = 10 V, ID = 3 A Table 6. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 - 88 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 6.5 - Ω Qg Total gate charge - 10 - nC Qgs Gate-source charge - 2 - nC Qgd Gate-drain charge VDD = 480 V, ID = 5.5 A, VGS = 10 V (see Figure 15) - 5.1 - nC VDS = 100 V, f = 1 MHz, VGS = 0 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Switching times Symbol td(on) tr td(off) tf 4/15 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 300 V, ID = 3 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14 and Figure 19) Fall time DocID024728 Rev 2 Min. Typ. Max. Unit - 8.8 - ns - 7.5 - ns - 22 - ns - 13.5 - ns STF9N60M2, STFI9N60M2 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 5.5 A ISDM (1) Source-drain current (pulsed) - 22 A VSD (2) Forward on voltage - 1.6 V ISD trr ISD = 5.5 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 5.5 A, di/dt = 100 A/µs VDD = 60 V (see Figure 16) ISD = 5.5 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 16) - 265 ns - 1.65 µC - 12.5 A - 377 ns - 2.3 µC - 12.2 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID024728 Rev 2 5/15 15 Electrical characteristics 2.1 STF9N60M2, STFI9N60M2 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM15863v1 ID (A) 10 s ai re n) s a DS(o i th R in ax n io by m t a er ed Op imit L 1 10µs 100µs 1ms Tj=150°C Tc=25°C Single pulse 0.1 0.01 0.1 100 10 1 10ms VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics AM15865v1 ID (A) VGS=7, 8, 9, 10V 10 AM15866v1 ID (A) VDS=17 V 10 6V 8 8 6 6 5V 4 4 2 2 4V 0 5 0 10 20 15 0 VDS(V) Figure 6. Gate charge vs gate-source voltage VGS (V) 12 AM15869v1 VDS ID=5.5A VDD=480V VDS (V) 2 0 4 6 8 10 VGS(V) Figure 7. Static drain-source on-resistance AM15868v1 RDS(on) (Ω) 0.760 VGS=10A 500 0.750 10 400 0.740 8 300 6 200 4 0.720 0.710 100 2 0 0 6/15 0.730 2 4 6 8 10 0 Qg(nC) 0.700 0.690 DocID024728 Rev 2 0 1 2 3 4 5 ID(A) STF9N60M2, STFI9N60M2 Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy AM15870v1 C (pF) AM15874v1 Eoss (µJ) 1000 Ciss 2 100 Coss 10 1 1 Crss 0.1 0.1 100 10 1 0 0 VDS(V) Figure 10. Normalized gate threshold voltage vs temperature AM15871v1 VGS(th) 100 200 ID=250µA 600 VDS(V) AM15872v1 RDS(on) ID=3 A VGS=10 V 2.5 1.15 500 Figure 11. Normalized on-resistance vs temperature (norm) (norm) 400 300 2.3 1.1 2.1 1.05 1.9 1.0 1.7 0.95 1.5 0.9 1.3 0.85 1.1 0.8 0.9 0.7 0.75 0.7 -50 -25 0 25 50 75 100 125 TJ(°C) Figure 12. Source-drain diode forward characteristics AM15873v1 VSD (V) 1.4 0.5 -50 0 25 50 75 100 125 TJ(°C) Figure 13. Normalized V(BR)DSS vs temperature AM15867v1 V(BR)DSS (norm) 1.11 ID=1mA 1.09 1.2 TJ=-50°C 1.07 1.0 1.05 0.8 1.03 TJ=25°C 0.6 1.01 TJ=150°C 0.99 0.4 0.97 0.2 0.95 0 0 -25 1 2 3 4 5 ISD(A) 0.93 -50 -25 DocID024728 Rev 2 0 25 50 75 100 125 TJ(°C) 7/15 15 Test circuits 3 STF9N60M2, STFI9N60M2 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 16. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 17. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform ton 9%5'66 tdon 9' toff tr tdoff tf 90% 90% ,'0 10% ,' 9'' 10% 0 9'' VDS 90% VGS $0Y 8/15 0 DocID024728 Rev 2 10% AM01473v1 STF9N60M2, STFI9N60M2 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID024728 Rev 2 9/15 15 Package mechanical data 4.1 STF9N60M2, STFI9N60M2 TO-220FP, STF9N60M2 Figure 20. TO-220FP drawing 7012510_Rev_K_B 10/15 DocID024728 Rev 2 STF9N60M2, STFI9N60M2 Package mechanical data Table 9. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID024728 Rev 2 11/15 15 Package mechanical data 4.2 STF9N60M2, STFI9N60M2 I2PAKFP (TO-281), STFI9N60M2 Figure 21. I2PAKFP (TO-281) drawing UHY$ 12/15 DocID024728 Rev 2 STF9N60M2, STFI9N60M2 Package mechanical data Table 10. I2PAKFP (TO-281) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 D1 0.65 0.85 E 0.45 0.70 F 0.75 1.00 F1 1.20 G 4.95 H 10.00 10.40 L1 21.00 23.00 L2 13.20 14.10 L3 10.55 10.85 L4 2.70 3.20 L5 0.85 1.25 L6 7.30 7.50 - DocID024728 Rev 2 5.20 13/15 15 Revision history 5 STF9N60M2, STFI9N60M2 Revision history Table 11. Document revision history 14/15 Date Revision Changes 03-Jun-2013 1 First release.The part number was previously included in datasheet DocID024399. 10-Mar-2014 2 Added: I2PAKFP package Minor text changes DocID024728 Rev 2 STF9N60M2, STFI9N60M2 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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