STD9N65M2, STF9N65M2
STP9N65M2, STU9N65M2
Datasheet
N-channel 650 V, 0.79 Ω typ., 5 A MDmesh M2 Power MOSFETs
in DPAK, TO-220FP, TO-220 and IPAK packages
Features
TAB
1
2
3
Order codes
DPAK
TAB
IPAK
1
2
VDS
RDS(on) max.
ID
STD9N65M2
3
1
TAB
2
STF9N65M2
3
STP9N65M2
TO-220FP
DPAK
650 V
0.90 Ω
STU9N65M2
TO-220
1
2
3
D(2, TAB)
Package
•
•
Extremely low gate charge
Excellent output capacitance (COSS) profile
•
•
100% avalanche tested
Zener-protected
5A
TO-220FP
TO-220
IPAK
Applications
G(1)
•
S(3)
AM01475V1
Switching applications
Description
These devices are N-channel Power MOSFETs developed using the MDmesh M2
technology. Thanks to their strip layout and improved vertical structure, these devices
exhibit low on-resistance and optimized switching characteristics, rendering them
suitable for the most demanding high-efficiency converters.
Product status link
STD9N65M2
STF9N65M2
STP9N65M2
STU9N65M2
DS10197 - Rev 3 - June 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
VGS
Value
Parameter
DPAK, TO-220, IPAK
Gate-source voltage
TO-220FP
±25
V
ID
Drain current (continuous) at TC = 25 °C
5
5(1)
ID
Drain current (continuous) at TC = 100 °C
3.2
3.2(1)
IDM (2)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s; TC = 25 °C)
A
60
Peak diode recovery voltage slope
15
dv/dt(4)
MOSFET dv/dt ruggedness
50
Tstg
Storage temperature range
TJ
A
20
dv/dt(3)
20
W
2.5
kV
V/ns
-55 to 150
Operating junction temperature range
Unit
°C
1. Current limited by package.
2. Pulse width is limited by safe operating area.
3. ISD ≤ 5 A, di/dt = 400 A/μs; VDS(peak) < V(BR)DSS, VDD = 400 V.
4. VDS ≤ 520 V.
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Rthj-pcb
Rthj-amb(1)
Value
DPAK
TO-220FP
Thermal resistance junction-case
2.08
6.25
Thermal resistance junction-pcb
50
Thermal resistance junction-ambient
TO-220
IPAK
2.08
Unit
°C/W
°C/W
62.5
100
°C/W
1. When mounted on 1 inch2 FR-4, 2 Oz copper board.
Table 3. Avalanche characteristics
Symbol
IAR
EAS
DS10197 - Rev 3
Parameter
Avalanche current, repetitive or not repetitive
(pulse width limited by TJ max)
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR; VDD = 50 V)
Value
Unit
1
A
105
mJ
page 2/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown voltage
Min.
VGS = 0 V, ID = 1 mA
Typ.
650
Zero gate voltage drain current
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±25 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on-resistance
VGS = 10 V, ID = 2.5 A
VGS = 0 V, VDS = 650 V, TC = 125 °C
Unit
V
VGS = 0 V, VDS = 650 V
IDSS
Max.
1
µA
100
µA
±10
µA
3
4
V
0.79
0.90
Ω
Min.
Typ.
Max.
Unit
-
310
-
pF
-
18
-
pF
-
0.9
-
pF
(1)
2
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
Test conditions
VDS = 100 V, f = 1 MHz, VGS = 0 V
Equivalent capacitance energy
related
VDS = 0 to 520 V, VGS = 0 V
-
109
-
pF
Rg
Intrinsic gate resistance
f = 1 MHz open drain
-
6.6
-
Ω
Qg
Total gate charge
VDD = 520 V, ID = 5 A
-
10.3
-
nC
Gate-source charge
VGS = 0 to 10 V
-
2.4
-
nC
Gate-drain charge
(see Figure 18. Test circuit for gate
charge behavior)
-
4.8
-
nC
Coss eq. (1)
Qgs
Qgd
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
Table 6. Switching times
Symbol
td(on)
tr
td(off)
tf
DS10197 - Rev 3
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Turn-on delay time
VDD = 325 V, ID = 2.5 A,
-
7.5
-
ns
Rise time
RG = 4.7 Ω, VGS = 10 V
-
6.6
-
ns
Turn-off delay time
(see Figure 17. Test circuit for resistive
load switching times and
Figure 22. Switching time waveform)
-
22.5
-
ns
-
18
-
ns
Fall time
page 3/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
Electrical characteristics
Table 7. Source-drain diode
Symbol
ISD
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain current
-
5
A
ISDM (1)
Source-drain current (pulsed)
-
20
A
VSD (2)
Forward on voltage
-
1.6
V
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
trr
Qrr
IRRM
ISD = 5 A, VGS = 0 V
-
276
ns
(see Figure 19. Test circuit for inductive
load switching and diode recovery times)
-
1.7
µC
-
12.5
A
Reverse recovery time
ISD = 5 A, di/dt = 100 A/µs,
-
312
ns
Reverse recovery charge
VDD = 60 V, TJ = 150 °C
-
1.9
µC
Reverse recovery current
(see Figure 19. Test circuit for inductive
load switching and diode recovery times)
-
12.4
A
ISD = 5 A, di/dt = 100 A/µs, VDD = 60 V
1. Pulse width is limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
DS10197 - Rev 3
page 4/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area for DPAK and IPAK
Figure 2. Thermal impedance for DPAK and IPAK
AM18058v1
ID
(A)
10
n)
(o
DS
O
p
Li e ra
m
ite tio n
d
b y in t
m h is
ax a
R re a
is
10µs
1
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
S ingle puls e
0.01
0.1
1
10
100
VDS (V)
Figure 3. Safe operating area for TO-220FP
AM18056v1
ID
(A)
Figure 4. Thermal impedance for TO-220FP
K
GC20940
(o
n)
10µs
10 -1
DS
O
p
Li e ra
m
ite tio n
d
b y in t
m h is
ax a
R re a
is
10
1
100µs
1ms
10ms
0.1
10 -2
Tj=150°C
Tc=25°C
S ingle puls e
0.01
0.1
1
10
100
VDS (V)
Figure 5. Safe operating area for TO-220
10 -3
10 -4
10 -3
10 -2
10 -1
10 0
t p (s)
Figure 6. Thermal impedance for TO-220
AM18057v1
ID
(A)
10
n)
(o
DS
O
p
Li e ra
m
ite tio n
d
b y in t
m h is
ax a
R re a
is
10µs
1
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
S ingle puls e
0.01
0.1
DS10197 - Rev 3
1
10
100
VDS (V)
page 5/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
Electrical characteristics (curves)
Figure 7. Output characteristics
ID
(A)
Figure 8. Transfer characteristics
ID
(A)
GADG160320171044OCH
VGS = 8, 9, 10 V
VGS = 7 V
10
8
10
8
VGS = 6 V
6
6
4
4
2
4
8
12
16
20
VDS (V)
Figure 9. Gate charge vs gate-source voltage
VGS
(V)
GADG160320171046QVG VDS
(V)
VDD = 520 V,
ID = 5 A
12
0
0
2
4
6
8
VGS (V)
Figure 10. Static drain-source on-resistance
AM18062v1
R DS (on)
(Ω)
VGS =10V
600
0.830
10
500
VDS
8
VDS = 20 V
2
VGS = 5 V
0
0
GADG160320171044TCH
400
0.820
0.810
0.800
6
300
4
200
2
100
0.770
0
Qg (nC)
0.760
0.790
0
0
2
4
6
8
10
2
3
4
5
ID(A)
GADG160320171046BDV
1.12
CISS
2
1.08
ID = 1 mA
1.04
COSS
10 1
10 0
1
V(BR)DSS
(norm.)
GADG160320171212CVR
10 3
10
0
Figure 12. Normalized V(BR)DSS vs temperature
Figure 11. Capacitance variations
C
(pF)
0.780
1.00
0.96
f = 1 MHz
CRSS
0.92
10 -1
10 -1
DS10197 - Rev 3
10 0
10 1
10 2
VDS (V)
0.88
-75
-25
25
75
125
Tj (°C)
page 6/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
Electrical characteristics (curves)
Figure 13. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm.)
GADG160320171045VTH
RDS(on)
(norm.)
GADG160320171045RON
2.2
1.1
ID = 250 µA
1.8
1.0
VGS = 10 V
1.4
0.9
1.0
0.8
0.6
0.7
0.6
-75
Figure 14. Normalized on-resistance vs temperature
-25
25
75
125
Tj (°C)
Figure 15. Source-drain diode forward characteristics
AM18068v1
VS D
(V)
0.2
-75
-25
25
75
125
Tj (°C)
Figure 16. Output capacitance stored energy
EOSS
GADG160320171046EOS
TJ =-50°C
1.0
2.5
2.0
TJ
1.5
1.0
TJ =150°C
0.5
2
DS10197 - Rev 3
IS D
0.0
0
100
200
300
400
500
600
VDS (V)
page 7/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
Test circuits
3
Test circuits
Figure 17. Test circuit for resistive load switching times
Figure 18. Test circuit for gate charge behavior
VDD
12 V
2200
+ μF
3.3
μF
VDD
VD
VGS
1 kΩ
100 nF
RL
IG= CONST
VGS
RG
47 kΩ
+
pulse width
D.U.T.
2.7 kΩ
2200
μF
pulse width
D.U.T.
100 Ω
VG
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 19. Test circuit for inductive load switching and
diode recovery times
D
G
A
D.U.T.
S
25 Ω
A
L
A
B
B
3.3
µF
D
G
+
VD
100 µH
fast
diode
B
Figure 20. Unclamped inductive load test circuit
RG
1000
+ µF
2200
+ µF
VDD
3.3
µF
VDD
ID
D.U.T.
S
D.U.T.
Vi
_
pulse width
AM01471v1
AM01470v1
Figure 22. Switching time waveform
Figure 21. Unclamped inductive waveform
ton
V(BR)DSS
td(on)
VD
toff
td(off)
tr
tf
90%
90%
IDM
VDD
10%
0
ID
VDD
AM01472v1
VGS
0
VDS
10%
90%
10%
AM01473v1
DS10197 - Rev 3
page 8/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
DS10197 - Rev 3
page 9/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
DPAK (TO-252) type A package information
4.1
DPAK (TO-252) type A package information
Figure 23. DPAK (TO-252) type A package outline
0068772_A_26
DS10197 - Rev 3
page 10/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
DPAK (TO-252) type A package information
Table 8. DPAK (TO-252) type A mechanical data
Dim.
mm
Min.
Max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
4.95
E
6.40
E1
4.60
4.70
4.80
e
2.159
2.286
2.413
e1
4.445
4.572
4.699
H
9.35
10.10
L
1.00
1.50
(L1)
2.60
2.80
3.00
L2
0.65
0.80
0.95
L4
0.60
R
V2
DS10197 - Rev 3
Typ.
5.10
5.25
6.60
1.00
0.20
0°
8°
page 11/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
DPAK (TO-252) type C package information
4.2
DPAK (TO-252) type C package information
Figure 24. DPAK (TO-252) type C package outline
0068772_C_26
DS10197 - Rev 3
page 12/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
DPAK (TO-252) type C package information
Table 9. DPAK (TO-252) type C mechanical data
Dim.
mm
Min.
Typ.
Max.
A
2.20
2.30
2.38
A1
0.90
1.01
1.10
A2
0.00
0.10
b
0.72
0.85
b4
5.13
c
0.47
0.60
c2
0.47
0.60
D
6.00
D1
5.25
E
6.50
E1
4.70
e
5.46
6.10
6.20
6.60
6.70
2.186
2.286
2.386
H
9.80
10.10
10.40
L
1.40
1.50
1.70
L1
L2
2.90 REF
0.90
L3
L4
1.25
0.51 BSC
0.60
L6
DS10197 - Rev 3
5.33
0.80
1.00
1.80 BSC
θ1
5°
7°
9°
θ2
5°
7°
9°
V2
0°
8°
page 13/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
DPAK (TO-252) type C package information
Figure 25. DPAK (TO-252) recommended footprint (dimensions are in mm)
FP_0068772_26
DS10197 - Rev 3
page 14/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
DPAK (TO-252) packing information
4.3
DPAK (TO-252) packing information
Figure 26. DPAK (TO-252) tape outline
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
B1
K0
For machine ref. only
including draft and
radii concentric around B0
W
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
DS10197 - Rev 3
page 15/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
DPAK (TO-252) packing information
Figure 27. DPAK (TO-252) reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
2.5mm min.width
Full radius
AM06038v1
Table 10. DPAK (TO-252) tape and reel mechanical data
Tape
Dim.
mm
mm
Dim.
Min.
Max.
A0
6.8
7
A
B0
10.4
10.6
B
1.5
12.1
C
12.8
1.6
D
20.2
G
16.4
50
B1
DS10197 - Rev 3
Reel
Min.
Max.
330
13.2
D
1.5
D1
1.5
E
1.65
1.85
N
F
7.4
7.6
T
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
18.4
22.4
page 16/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
TO-220FP package information
4.4
TO-220FP package information
Figure 28. TO-220FP package outline
7012510_Rev_13_B
DS10197 - Rev 3
page 17/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
TO-220FP package information
Table 11. TO-220FP package mechanical data
Dim.
mm
Min.
Max.
A
4.40
4.60
B
2.50
2.70
D
2.50
2.75
E
0.45
0.70
F
0.75
1.00
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.20
G1
2.40
2.70
H
10.00
10.40
L2
DS10197 - Rev 3
Typ.
16.00
L3
28.60
30.60
L4
9.80
10.60
L5
2.90
3.60
L6
15.90
16.40
L7
9.00
9.30
Dia
3.00
3.20
page 18/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
TO-220 type A package information
4.5
TO-220 type A package information
Figure 29. TO-220 type A package outline
0015988_typeA_Rev_22
DS10197 - Rev 3
page 19/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
TO-220 type A package information
Table 12. TO-220 type A package mechanical data
Dim.
mm
Min.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.55
c
0.48
0.70
D
15.25
15.75
D1
DS10197 - Rev 3
Typ.
1.27
E
10.00
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13.00
14.00
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
page 20/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
IPAK (TO-251) type A package information
4.6
IPAK (TO-251) type A package information
Figure 30. IPAK (TO-251) type A package outline
0068771_IK_typeA_rev14
DS10197 - Rev 3
page 21/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
IPAK (TO-251) type A package information
Table 13. IPAK (TO-251) type A package mechanical data
Dim.
mm
Min.
Typ.
A
2.20
2.40
A1
0.90
1.10
b
0.64
0.90
b2
b4
0.95
5.20
B5
5.40
0.30
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
E
6.40
6.60
e
e1
2.28
4.40
H
DS10197 - Rev 3
Max.
4.60
16.10
L
9.00
9.40
L1
0.80
1.20
L2
0.80
V1
10°
1.00
page 22/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
IPAK (TO-251) type C package information
4.7
IPAK (TO-251) type C package information
Figure 31. IPAK (TO-251) type C package outline
0068771_IK_typeC_rev14
DS10197 - Rev 3
page 23/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
IPAK (TO-251) type C package information
Table 14. IPAK (TO-251) type C package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
2.20
2.30
2.35
A1
0.90
1.00
1.10
b
0.66
0.79
b2
DS10197 - Rev 3
0.90
b4
5.23
5.33
5.43
c
0.46
0.59
c2
0.46
0.59
D
6.00
6.10
6.20
D1
5.20
5.37
5.55
E
6.50
6.60
6.70
E1
4.60
4.78
4.95
e
2.20
2.25
2.30
e1
4.40
4.50
4.60
H
16.18
16.48
16.78
L
9.00
9.30
9.60
L1
0.80
1.00
1.20
L2
0.90
1.08
1.25
θ1
3°
5°
7°
θ2
1°
3°
5°
page 24/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
Ordering information
5
Ordering information
Table 15. Order codes
Order code
Marking
STD9N65M2
STF9N65M2
STP9N65M2
STU9N65M2
DS10197 - Rev 3
9N65M2
Package
Packing
DPAK
Tape and reel
TO-220FP
TO-220
Tube
IPAK
page 25/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
Revision history
Table 16. Document revision history
Date
Version
24-Feb-2014
1
Changes
First release.
– Modified: title, Features and Description
15-Jul-2014
2
– Modified: Figure 5 and 15
– Updated: Figure 28 and Table 12
– Minor text changes.
Removed maturity status indication from cover page. The document status is production data.
19-Jun-2019
3
Updated Section 1 Electrical ratings, Section 2 Electrical characteristics and Section
2.1 Electrical characteristics (curves)
Minor text changes.
DS10197 - Rev 3
page 26/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
5
4.1
DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2
DPAK (TO-252) type C package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.3
DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.4
TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.5
TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.6
IPAK (TO-251) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.7
IPAK (TO-251) type C package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
DS10197 - Rev 3
page 27/28
STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service
names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
DS10197 - Rev 3
page 28/28