0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
STF9NK60ZD

STF9NK60ZD

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT78

  • 描述:

    MOSFET N-CH 600V 7A TO220FP

  • 数据手册
  • 价格&库存
STF9NK60ZD 数据手册
STB9NK60ZD STF9NK60ZD - STP9NK60ZD N-channel 600 V - 0.85 Ω - 7 A - D2PAK, TO-220FP, TO-220 SuperFREDMesh™ Power MOSFET Features Type RDS(on) max VDSS ID Pw STB9NK60ZD 600 V < 0.95 Ω 7A 125 W STF9NK60ZD 600 V < 0.95 Ω 7A 30 W 600 V < 0.95 Ω STP9NK60ZD ■ Very high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Low intrinsic capacitances ■ Fast internal recovery diode 7A 125 W 2 1 2 TO-220FP TO-220 3 1 D²PAK Application ■ 3 3 1 Figure 1. Internal schematic diagram Switching applications Description The SuperFREDMesh™ series associates all advantages of reduced on-resistance, zener gate protection and very high dv/dt capability with a Fast body-drain recovery diode. Such series complements the “FDmesh™” advanced technology. Table 1. Device summary Order codes Marking Package Packaging STB9NK60ZD B9NK60ZD D²PAK Tape and reel STF9NK60ZD F9NK60ZD TO-220FP Tube STP9NK60ZD P9NK60ZD TO-220 Tube April 2008 Rev 8 1/16 www.st.com 16 Contents STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 .............................................. 9 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit D²PAK/TO-220 TO-220FP VDS Drain-source voltage (VGS = 0) 600 V VGS Gate- source voltage ± 30 V Drain current (continuos) at TC = 25 °C ID Drain current (continuos) at TC = 100 °C ID IDM (2) PTOT 4.3 4.3 A 28 (1) A 28 Total dissipation at TC = 25 °C 125 30 W 1 0.24 W/°C VESD(G-S) Gate source ESD (HBM-C=100 pF, R=1.5 kΩ) dv/dt A (1) Drain current (pulsed) Derating factor (3) 7 (1) 7 Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Tj Tstg Operating junction temperature Storage temperature 4000 V 15 V/ns -- 2500 -55 to 150 V °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 7 A, di/dt ≤ 500 A/µs, VDD = 80%V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit D²PAK/TO-220 TO-220FP Thermal resistance junction-pcb Max (when mounted on minimum footprint) 30 -- °C/W Rthj-case Thermal resistance junction-case Max 1 4.16 °C/W Rthj-pcb Rthj-amb Thermal resistance junction-ambient Max Tl Table 4. Symbol Maximum lead temperature for soldering purpose 62.5 °C/W 300 °C Max value Unit 7 A 235 mJ Avalanche characteristics Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 3/16 Electrical characteristics 2 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 600 V IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC = 125 °C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) ±10 µA 3.5 4.5 V 0.85 0.95 Ω Typ. Max. Unit VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA RDS(on) Static drain-source on resistance Table 6. Symbol VGS = 10 V, ID = 3.5 A Dynamic Parameter Test conditions gfs (1) Forward transconductance Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 Equivalent output capacitance Total gate charge Gate-source charge Gate-drain charge COSS eq(2) Qg Qgs Qgd 2.5 VDS = 15 V, ID = 3.5 A Min. 5.3 S 1110 135 30 pF pF pF VGS = 0, VDS = 0 to 480 V 72 pF VDD = 480 V, ID = 7 A, VGS = 10 V (see Figure 17) 41 8.7 21 53 nC nC nC 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/16 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Table 7. Switching times Symbol Parameter Electrical characteristics Test conditions Min. Typ. Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 300 V, ID = 3.5 A RG = 4.7 Ω, VGS = 10 V (see Figure 16) 11.4 13.6 23.1 15 ns ns ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD = 480 V, ID = 7 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16) 11 8 20 ns ns ns Table 8. Source drain diode Symbol Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 7 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 7 A, di/dt = 100 A/µs VDD = 30 V (see Figure 21) 130 550 8.4 ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 7 A, di/dt = 100 A/µs VDD = 30 V, Tj = 150 °C (see Figure 21) 176 880 10 ns nC A trr Qrr IRRM trr Qrr IRRM Test conditions Min. Typ. Max. Unit 7 28 A A 1.6 V 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 9. Symbol BVGSO(1) Gate-source Zener diode Parameter Gate-source breakdown voltage Test conditions Igs=± 1 mA (open drain) Min Typ Max Unit 30 V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components 5/16 Electrical characteristics STB9NK60ZD - STF9NK60ZD - STP9NK60ZD 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / D²PAK Figure 3. Thermal impedance for TO-220 / D²PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics 6/16 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Figure 8. Normalized BVDSS vs temperature Electrical characteristics Figure 9. Static drain-source on resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature 7/16 Electrical characteristics Figure 14. Source-drain diode forward characteristics 8/16 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Figure 15. Maximum avalanche energy vs temperature STB9NK60ZD - STF9NK60ZD - STP9NK60ZD 3 Test circuits Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test switching and diode recovery times circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform 9/16 Package mechanical data 4 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/16 Package mechanical data STB9NK60ZD - STF9NK60ZD - STP9NK60ZD TO-220FP mechanical data mm. Dim. Min. A 4.40 inch Typ Max. Min. 4.60 0.173 Typ. 0.181 Max. B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.017 0.027 F 0.75 1.00 0.030 0.039 F1 1.15 1.50 0.045 0.067 F2 1.15 1.50 0.045 0.067 G 4.95 5.20 0.195 0.204 G1 2.40 2.70 0.094 0.106 H 10 10.40 0.393 L2 16 0.409 0.630 28.6 30.6 1.126 L4 9.80 10.60 0.385 1.204 0.417 L5 2.9 3.6 0.114 0.141 L6 15.90 16.40 0.626 0.645 L7 9 9.30 0.354 0.366 Dia 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 Dia F F1 L7 L2 L5 1 2 3 L4 7012510-I 12/16 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Package mechanical data D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.4 0° Typ 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° 0079457_M 13/16 Packaging mechanical data 5 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 14/16 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD 6 Revision history Revision history Table 10. Document revision history Date Revision Changes 29-Sep-2003 6 Data updated 13-Jun-2006 7 The document has been reformatted 14-Apr-2008 9 – Table 8 has been corrected – Package mechanical data upadted. 15/16 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16