STFH18N60M2

STFH18N60M2 Datasheet N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package Features TO-220 FP wide creepage D(2) Order code VDS @TJmax RDS(on) max. ID STFH18N60M2 650 V 0.280 Ω 13 A • • Extremely low gate charge Excellent output capacitance (COSS) profile • • • 100% avalanche tested Zener-protected Wide distance of 4.25 mm between the pins Applications G(1) • • • S(3) AM15572v1_no_tab Switching applications LCC converters Resonant converters Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments. Product status link STFH18N60M2 Product summary Order code STFH18N60M2 Marking 18N60M2 Package TO-220FP wide creepage Packing Tube DS11693 - Rev 3 - June 2019 For further information contact your local STMicroelectronics sales office. www.st.com STFH18N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V Drain current (continuous) at TC = 25 °C 13 A Drain current (continuous) at TC = 100 °C 8 A Drain current (pulsed) 52 A Total power dissipation at TC = 25 °C 25 W Peak diode recovery voltage slope 15 V/ns MOSFET dv/dt ruggedness 50 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) 2.5 kV Tstg Storage temperature range -55 to 150 °C Value Unit 5 °C/W 62.5 °C/W Value Unit 3 A 135 mJ VGS ID (1) IDM (2) PTOT dv/dt (3) dv/dt (4) Tj Parameter Operating junction temperature range 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 13 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V 4. VDS ≤ 480 V Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Table 3. Avalanche characteristics Symbol DS11693 - Rev 3 Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) EAS Single pulse avalanche energy (starting Tj=25 °C, ID= IAR, VDD=50 V) page 2/12 STFH18N60M2 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified). Table 4. On /off states Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current Gate threshold voltage Static drain-source on-resistance Test conditions ID = 1 mA, VGS = 0 V Min. Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 1 µA VGS = 0 V, VDS = 600 V, TC = 125 °C (1) 100 µA VDS = 0 V, VGS = ± 25 V ±10 µA 3 4 V 0.255 0.280 Ω Min. Typ. Max. Unit - 791 - pF - 40 - pF - 1.3 - pF - 164.5 - pF VDS = VGS, ID = 250 µA 2 VGS = 10 V, ID = 6.5 A 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq. (1) Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 V Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 5.6 - Ω Qg Total gate charge VDD = 480 V, ID = 13 A, - 21.5 - nC Qgs Gate-source charge - 3.2 - nC Qgd Gate-drain charge VGS = 0 to 10 V (see Figure 14. Test circuit for gate charge behavior) - 11.3 - nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS11693 - Rev 3 Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VDD = 300 V, ID = 6.5 A, - 12 - ns Rise time RG = 4.7 Ω, VGS = 10 V - 9 - ns Turn-off delay time (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) - 47 - ns - 10.6 - ns Fall time page 3/12 STFH18N60M2 Electrical characteristics Table 7. Source drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 13 A ISDM (1) Source-drain current (pulsed) - 52 A VSD (2) Forward on voltage ISD = 13 A, VGS = 0 V - 1.6 V trr Reverse recovery time ISD = 13 A, di/dt = 100 A/µs - 305 ns Qrr Reverse recovery charge - 3.3 µC IRRM Reverse recovery current VDD = 60 V (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 22 A trr Reverse recovery time ISD = 13 A, di/dt = 100 A/µs - 417 ns Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C - 4.6 µC IRRM Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 22 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. DS11693 - Rev 3 page 4/12 STFH18N60M2 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance AM15834v1 ID (A) s ai re on) si a DS( th R in ax n it o by m ra pe ed O imit L 10 1 10µs K GC20940 10 -1 100µs 1ms 10ms Tj=150°C Tc=25°C 0.1 10 -2 Single pulse 0.01 10 1 0.1 100 10 -3 10 -4 VDS(V) Figure 3. Output characteristics VGS=7, 8, 9, 10V 10 -1 t p (s) 10 0 AM15838v1 ID (A) VDS=18V 30 30 25 25 6V 20 10 -2 Figure 4. Transfer characteristics AM15837v1 ID (A) 10 -3 20 15 15 10 10 5V 5 5 4V 0 0 5 15 10 20 VDS(V) Figure 5. Gate charge vs gate-source voltage AM15839v1 VDS VGS (V) VDD=480V ID=13A 12 VDS VDS 10 (V) 0 0 2 4 10 8 6 VGS(V) Figure 6. Static drain-source on-resistance AM15840v1 RDS(on) (Ω) 500 0.270 400 0.265 300 0.260 200 0.255 100 0.250 VGS=10V 8 6 4 2 0 0 DS11693 - Rev 3 5 10 15 20 0 25 Qg(nC) 0.245 0 2 4 6 8 10 12 ID(A) page 5/12 STFH18N60M2 Electrical characteristics (curves) Figure 8. Normalized gate threshold voltage vs. temperature Figure 7. Capacitance variations AM15841v1 C (pF) V GS(th) (norm.) GIPG070815BQ6KLVTH I D = 250 µA 1.1 1000 Ciss 1.0 100 0.9 Coss 0.8 10 0.7 Crss 1 0.1 1 10 100 VDS(V) Figure 9. Normalized on-resistance vs temperature RDS(on) (norm.) GIPG070815BQ6KLRON VGS = 10 V 2.4 0.6 -75 -25 25 75 125 T j (°C) Figure 10. Source-drain diode forward characteristics AM15842v1 VSD(V) 1.4 1.2 2.0 TJ=-50°C 1.0 1.6 0.8 1.2 0.6 0.8 0.4 0.4 0.2 0.0 -75 -25 25 75 125 Tj (°C) Figure 11. Normalized V(BR)DSS vs temperature V (BR)DSS (norm.) GIPG070815BQ6KLBDV I D = 1 mA 1.12 0.0 4 6 8 10 12 ISD(A) AM15843v1 Eoss(µJ) 6 5 1.04 4 1.00 3 0.96 2 1 0.92 DS11693 - Rev 3 2 TJ=25°C Figure 12. Output capacitance stored energy 1.08 0.88 -75 0 TJ=150°C -25 25 75 125 T j (°C) 0 0 100 200 300 400 500 600 VDS(V) page 6/12 STFH18N60M2 Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 16. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 18. Switching time waveform Figure 17. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS11693 - Rev 3 page 7/12 STFH18N60M2 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-220FP wide creepage package information Figure 19. TO-220FP wide creepage package outline DM00260252_1 DS11693 - Rev 3 page 8/12 STFH18N60M2 TO-220FP wide creepage package information Table 8. TO-220FP wide creepage package mechanical data Dim. DS11693 - Rev 3 mm Min. Typ. Max. A 4.60 4.70 4.80 B 2.50 2.60 2.70 D 2.49 2.59 2.69 E 0.46 0.59 F 0.76 0.89 F1 0.96 1.25 F2 1.11 1.40 G 8.40 8.50 8.60 G1 4.15 4.25 4.35 H 10.90 11.00 11.10 L2 15.25 15.40 15.55 L3 28.70 29.00 29.30 L4 10.00 10.20 10.40 L5 2.55 2.70 2.85 L6 16.00 16.10 16.20 L7 9.05 9.15 9.25 Dia 3.00 3.10 3.20 page 9/12 STFH18N60M2 Revision history Table 9. Document revision history Date Revision 08-Jun-2016 1 16-Jun-2016 2 06-Jun-2019 3 Changes First release. Document status promoted from preliminary data to production data. Minor text changes. Modified Figure 8. Normalized gate threshold voltage vs. temperature, Figure 9. Normalized on-resistance vs temperature and Figure 11. Normalized V(BR)DSS vs temperature. Minor text changes. DS11693 - Rev 3 page 10/12 STFH18N60M2 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 TO-220FP wide creepage package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 DS11693 - Rev 3 page 11/12 STFH18N60M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS11693 - Rev 3 page 12/12