STFI11NM65N

STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N N-channel 650 V, 0.425 Ω typ., 11 A MDmesh™II Power MOSFET in DPAK, TO-220FP, I²PAKFP and TO-220 packages Datasheet - production data Features TAB 3 Order codes 1 DPAK VDSS @ TJmax RDS(on) max ID 710 V < 0.455 Ω 11 A 3 2 STD11NM65N 1 TO-220FP STF11NM65N STFI11NM65N TAB STP11NM65N 1 3 2 1 3 2 • Low input capacitance and gate charge TO-220 I²PAKFP • 100% avalanche tested • low gate input resistance Figure 1. Internal schematic diagram Applications • Switching applications 'Ć7$% Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. * 6 $0Y Table 1. Device summary Order codes Marking Packages Packaging DPAK Tape and reel STD11NM65N STF11NM65N TO-220FP 11NM65N STFI11NM65N I²PAKFP STP11NM65N TO-220 July 2013 This is information on a product in full production. Doc ID 13476 Rev 4 Tube 1/21 www.st.com Contents STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) .......................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 .............................................. 9 Doc ID 13476 Rev 4 STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220, DPAK VDS Drain-source voltage 650 VGS Gate-source voltage ± 25 TO-220FP I²PAKFP V V (1) A A ID Drain current (continuous) at TC = 25 °C 11 11 ID Drain current (continuous) at TC = 100 °C 7 7 (1) IDM (2) PTOT Drain current (pulsed) 44 Total dissipation at TC = 25 °C 110 IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) EAS dv/dt (3) 44 (1) 25 A W 3 A Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 147 mJ Peak diode recovery voltage slope 15 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj Unit 2500 V - 55 to 150 °C 150 °C Max. operating junction temperature 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 11 A, di/dt ≤ 400 A/μs; VPeak < V(BR)DSS, VDD ≤ 80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit DPAK TO-220FP I²PAKFP TO-220 Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Rthj-pcb (1) Thermal resistance junction-pcb max 1.14 5 1.14 62.5 50 °C/W °C/W °C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu Doc ID 13476 Rev 4 3/21 21 Electrical characteristics 2 STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 IDSS Zero gate voltage VDS = 650 V drain current (VGS = 0) VDS = 650 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Min. Typ. Gate threshold voltage VDS = VGS, ID = 250 μA RDS(on) Static drain-source onVGS = 10 V, ID = 5.5 A resistance Unit 650 V 1 100 μA μA ± 100 nA 3 4 V 0.425 0.455 Ω Min. Typ. Max. Unit - 800 - pF pF pF - 50 - pF - 2.9 - pF VGS = ± 25 V VGS(th) Max. 2 Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 520 V, VGS = 0 - 133 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 4.2 - Ω Qg Total gate charge - 29 - nC Qgs Gate-source charge - 3.9 - nC Qgd Gate-drain charge VDD = 520 V, ID = 11 A, VGS = 10 V (see Figure 19) - 16 - nC VDS = 50 V, f = 1 MHz, VGS = 0 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/21 Doc ID 13476 Rev 4 STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N Electrical characteristics Table 6. Switching times Symbol td (on) tr td(off) tf Parameter Test conditions Turn-on delay time VDD = 325 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 20 and Figure 23) Rise time Turn-off delay time Fall time Min. Typ. Max. Unit - 15.5 - ns - 10.8 - ns - 11 - ns - 47 - ns Min. Typ. Table 7. Source drain diode Symbol Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage trr Test conditions ISD = 11 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 11 A, di/dt = 100 A/μs VDD = 60 V (see Figure 23) ISD = 11 A, di/dt = 100 A/μs VDD = 60 V, Tj = 150 °C (see Figure 23) Max. Unit - 11 44 A A - 1.6 V - 418 ns - 4.4 μC - 21 A - 530 ns - 5.6 μC - 21 A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% Doc ID 13476 Rev 4 5/21 21 Electrical characteristics 2.1 STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N Electrical characteristics (curves) Figure 2. Safe operating area for DPAK Figure 3. Thermal impedance for DPAK AM13041v1 ID (A) Tj=150°C Tc=25°C Single pulse ) on S( Op Lim era ite tion d by in th m is ax ar RD ea is 10µs 10 1 100µs 1ms 10ms 0.1 0.1 10 1 100 VDS(V) Figure 4. Safe operating area for TO-220FP and Figure 5. Thermal impedance for TO-220FP and I²PAKFP I²PAKFP AM13040v1 ID (A) 10 Tj=150°C Tc=25°C Single pulse is ea ) ar S(on D R t in ax n io y m t b ra pe ed O imit L s hi 1 10µs 100µs 1ms 10ms 0.1 0.01 0.1 10 1 100 VDS(V) Figure 6. Safe operating area for TO-220 AM13039v1 ID (A) ) a is Tj=150°C Tc=25°C Single pulse (o n 10µs DS Op Lim era ite tion d by in th m is ax ar R e 10 1 Figure 7. Thermal impedance for TO-220 100µs 1ms 10ms 0.1 0.1 6/21 1 10 100 VDS(V) Doc ID 13476 Rev 4 STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N Figure 8. Output characteristics Electrical characteristics Figure 9. Transfer characteristics AM13042v1 ID (A) AM13043v1 ID (A) VDS=21V VGS=10V 20 20 6V 15 15 10 10 5V 5 5 0 0 10 5 20 15 25 Figure 10. Gate charge vs gate-source voltage AM13044v1 VDS VGS (V) VDS (V) VDD=520V ID=11A 12 0 0 VDS(V) 500 10 2 4 8 6 VGS(V) Figure 11. Static drain-source on resistance AM13045v1 RDS(on) (Ω) VGS=10V 0.440 400 0.430 8 300 6 0.420 200 4 100 2 0 0 5 10 20 15 25 0 Qg(nC) 30 Figure 12. Capacitance variations 0.400 0 2 4 6 8 10 ID(A) Figure 13. Output capacitance stored energy AM13046v1 C (pF) 0.410 AM13047v1 Eoss (µJ) 5 1000 Ciss 4 100 3 Coss 2 10 1 Crss 1 0.1 1 10 100 VDS(V) Doc ID 13476 Rev 4 0 0 100 200 300 400 500 600 VDS(V) 7/21 21 Electrical characteristics STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N Figure 14. Normalized gate threshold voltage vs temperature AM13048v1 VGS(th) (norm) Figure 15. Normalized on-resistance vs temperature (norm) ID=250µA 1.10 2.1 1.00 1.7 0.90 1.3 0.80 0.9 0.70 -50 -25 0 25 50 75 100 TJ(°C) Figure 16. Source-drain diode forward characteristics AM13050v1 VSD (V) AM13049v1 RDS(on) 0.5 -50 -25 ID=5.5A 0 25 TJ(°C) AM09028v1 VDS ID=1mA 1.10 1.2 75 100 Figure 17. Normalized BVDSS vs temperature (norm) TJ=-50°C 50 1.08 1.06 TJ=25°C 1.0 1.04 1.02 1.00 0.8 0.98 TJ=150°C 0.6 0.96 0.4 0.94 0.92 -50 -25 0 8/21 2 4 6 8 10 ISD(A) Doc ID 13476 Rev 4 0 25 50 75 100 TJ(°C) STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 20. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 21. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 13476 Rev 4 10% AM01473v1 9/21 21 Package mechanical data 4 STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 8. DPAK (TO-252) mechanical data mm Dim. Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 1.50 L1 2.80 L2 0.80 L4 0.60 1 R V2 10/21 Typ. 0.20 0° 8° Doc ID 13476 Rev 4 STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N Package mechanical data Figure 24. DPAK (TO-252) drawing 0068772_I Figure 25. DPAK footprint(a) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 AM08850v1 a. All dimension are in millimeters Doc ID 13476 Rev 4 11/21 21 Package mechanical data STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N Table 9. TO-220FP mechanical data mm Dim. Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 12/21 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 13476 Rev 4 STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N Package mechanical data Figure 26. TO-220FP drawing 7012510_Rev_K_B Doc ID 13476 Rev 4 13/21 21 Package mechanical data STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N Table 10. I2PAKFP (TO-281) mechanical data mm Dim. Min. Typ. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 D1 0.65 0.85 E 0.45 0.70 F 0.75 1.00 F1 14/21 Max. 1.20 G 4.95 H 10.00 10.40 L1 21.00 23.00 L2 13.20 14.10 L3 10.55 10.85 L4 2.70 3.20 L5 0.85 1.25 L6 7.30 7.50 - Doc ID 13476 Rev 4 5.20 STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N Package mechanical data Figure 27. I2PAKFP (TO-281) drawing ĆUHY$ Doc ID 13476 Rev 4 15/21 21 Package mechanical data STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 16/21 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 13476 Rev 4 STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N Package mechanical data Figure 28. TO-220 type A drawing BW\SH$B5HYB7 Doc ID 13476 Rev 4 17/21 21 Packaging mechanical data 5 STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N Packaging mechanical data Table 12. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 18/21 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Doc ID 13476 Rev 4 18.4 22.4 STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N Packaging mechanical data Figure 29. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 30. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID 13476 Rev 4 19/21 21 Revision history 6 STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N Revision history Table 13. Document revision history 20/21 Date Revision Changes 01-Jun-2007 1 First release. 03-Oct-2007 2 Added device in D2PAK and updated Figure 12: Capacitance variations 20-Jul-2012 3 Document status promoted from preliminary to production data. Updated Section 4: Package mechanical data and Section 5: Packaging mechanical data. Minor text changes. 15-Jul-2013 4 Updated Table 1: Device summary and Section 4: Package mechanical data. Doc ID 13476 Rev 4 STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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