STF13N60M2, STFI13N60M2
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg
Power MOSFETs in TO-220FP and I2PAKFP packages
Datasheet − production data
Features
Order codes
VDS @ TJmax
RDS(on) max
ID
650 V
0.38 Ω
11 A
STF13N60M2
STFI13N60M2
• Extremely low gate charge
3
2
1
TO-220FP
1
2
• Lower RDS(on) x area vs previous generation
3
I2PAKFP
(TO-281)
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Figure 1. Internal schematic diagram
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
AM15572v1
Table 1. Device summary
Order codes
Marking
Package
STF13N60M2
TO-220FP
13N60M2
STFI13N60M2
March 2014
This is information on a product in full production.
Packaging
Tube
I2PAKFP (TO-281)
DocID023939 Rev 4
1/14
www.st.com
14
Contents
STF13N60M2, STFI13N60M2
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
.............................................. 8
DocID023939 Rev 4
STF13N60M2, STFI13N60M2
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
VGS
ID
Parameter
Gate-source voltage
Drain current (continuous) at TC = 25 °C
ID
Unit
± 25
V
(1)
A
11
Drain current (continuous) at TC = 100 °C
IDM (2)
Drain current (pulsed)
PTOT
dv/dt
Value
(3)
dv/dt(4)
A
44 (1)
A
Total dissipation at TC = 25 °C
25
W
Peak diode recovery voltage slope
15
V/ns
MOSFET dv/dt ruggedness
50
V/ns
2500
V
- 55 to 150
°C
Value
Unit
5
°C/W
62.5
°C/W
Value
Unit
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg
Storage temperature
Tj
7
(1)
Max. operating junction temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 11 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V.
4. VDS ≤ 480 V
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient max
Table 4. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetetive or not
repetetive (pulse width limited by Tjmax)
2.8
A
EAS
Single pulse avalanche energy (starting
Tj=25°C, ID= IAR; VDD=50)
125
mJ
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Electrical characteristics
2
STF13N60M2, STFI13N60M2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
V(BR)DSS
Parameter
Drain-source
breakdown voltage
Test conditions
ID = 1 mA, VGS = 0
Min.
Typ.
Max.
Unit
600
V
IDSS
Zero gate voltage
VDS = 600 V
drain current (VGS = 0) VDS = 600 V, TC=125 °C
1
100
μA
μA
IGSS
Gate-body leakage
current (VDS = 0)
±10
μA
3
4
V
0.35
0.38
Ω
Min.
Typ.
Max.
Unit
-
580
-
pF
-
32
-
pF
-
1.1
-
pF
VGS = ± 25 V
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 μA
RDS(on)
Static drain-source
on-resistance
2
VGS = 10 V, ID = 5.5 A
Table 6. Dynamic
Symbol
Parameter
Test conditions
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Coss eq.(1)
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0
-
120
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
6.6
-
Ω
Qg
Total gate charge
-
17
-
nC
-
2.5
-
nC
-
9
-
nC
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDS = 100 V, f = 1 MHz,
VGS = 0
VDD = 480 V, ID = 11 A,
VGS = 10 V (see Figure 15)
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Table 7. Switching times
Symbol
td(on)
tr
td(off)
tf
4/14
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off delay time
VDD = 300 V, ID = 5.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14 and 19)
Fall time
DocID023939 Rev 4
Min.
Typ.
Max.
Unit
-
11
-
ns
-
10
-
ns
-
41
-
ns
-
9.5
-
ns
STF13N60M2, STFI13N60M2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Source-drain current
-
11
A
ISDM
(1)
Source-drain current (pulsed)
-
44
A
VSD
(2)
Forward on voltage
-
1.6
V
ISD
trr
ISD = 11 A, VGS = 0
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 11 A, di/dt = 100 A/μs
VDD = 60 V (see Figure 16)
ISD = 11 A, di/dt = 100 A/μs
VDD = 60 V, Tj=150 °C
(see Figure 16)
-
297
ns
-
2.8
μC
-
18.5
A
-
394
ns
-
3.8
μC
-
19
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
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5/14
Electrical characteristics
2.1
STF13N60M2, STFI13N60M2
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
AM15735v1
ID
(A)
10
in
th
is
n m
tio y
ra d b
e
e
p
O imit
L
1
ar
ax
ea
R
D
is
S(
on
)
10µs
100 µS
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
10
1
VDS(V)
100
Figure 4. Output characteristics
Figure 5. Transfer characteristics
AM15712v1
ID
(A)
AM15713v1
ID (A)
VGS=7, 8, 9, 10V
20
20
VDS=18V
6V
16
16
12
12
5V
8
8
4
4
4V
0
0
4
12
8
16
Figure 6. Normalized V(BR)DSS vs temperature
AM15714v1
V(BR)DSS
(norm)
0
0
VDS(V)
ID=1 mA
2
4
8
6
VGS(V)
Figure 7. Static drain-source on-resistance
AM15715v1
RDS(on)
(Ω)
VGS=10V
1.1
0.370
1.06
0.360
1.02
0.350
0.98
0.340
0.94
0.9
-50
6/14
0.330
0
50
100
TJ(°C)
DocID023939 Rev 4
0
2
4
6
8
10
ID(A)
STF13N60M2, STFI13N60M2
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
AM15716v1
VDS
VGS
(V)
10
(V)
VDD=480V
ID=11A
VDS
500
Figure 9. Capacitance variations
AM15717v1
C
(pF)
1000
Ciss
400
8
100
300
6
Coss
10
4
200
2
100
0
0
8
4
12
0
Qg(nC)
16
Figure 10. Normalized gate threshold voltage vs
temperature
AM15718v1
VGS(th)
(norm)
1
Crss
0.1
0.1
1
10
100
VDS(V)
Figure 11. Normalized on-resistance vs
temperature
AM15719v1
RDS(on)
(norm)
1.1
ID=250µA
ID=5.5 A
VGS=10V
2.1
1.0
1.7
0.9
1.3
0.8
0.9
0.7
0.6
-50
100
50
0
0.5
-50
TJ(°C)
Figure 12. Source-drain diode forward
characteristics
AM15720v1
VSD (V)
100
50
0
TJ(°C)
Figure 13. Output capacitance stored energy
AM15721v1
Eoss(µJ)
TJ=-50°C
1
4
TJ=25°C
0.9
3
0.8
2
0.7
TJ=150°C
1
0.6
0.5
0
2
4
6
8
10
ISD(A)
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0
0
100
200
300
400
500
VDS(V)
7/14
Test circuits
3
STF13N60M2, STFI13N60M2
Test circuits
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 16. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 17. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/14
0
DocID023939 Rev 4
10%
AM01473v1
STF13N60M2, STFI13N60M2
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
DocID023939 Rev 4
9/14
Package mechanical data
STF13N60M2, STFI13N60M2
Figure 20. TO-220FP drawing
7012510_Rev_K_B
10/14
DocID023939 Rev 4
STF13N60M2, STFI13N60M2
Package mechanical data
Table 9. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
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11/14
Package mechanical data
STF13N60M2, STFI13N60M2
Figure 21. I2PAKFP (TO-281) drawing
REV!
Table 10. I2PAKFP (TO-281) mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
B
2.50
2.70
D
2.50
2.75
D1
0.65
0.85
E
0.45
0.70
F
0.75
1.00
F1
12/14
Max.
1.20
G
4.95
H
10.00
10.40
L1
21.00
23.00
L2
13.20
14.10
L3
10.55
10.85
L4
2.70
3.20
L5
0.85
1.25
L6
7.30
7.50
-
DocID023939 Rev 4
5.20
STF13N60M2, STFI13N60M2
5
Revision history
Revision history
Table 11. Document revision history
Date
Revision
Changes
18-Dec-2012
1
First release.
17-Apr-2013
2
– Added: note 4 on Table 2
– Modified: ID value on Table 2, IAR, IAS on Table 4, RDS(on) on
Table 5
– Updated: typical values for Table 6, 7 and 8
– Modified: Figure 1
21-Jun-2013
3
– Document status promoted from preliminary data to production
data
– Minor text changes
03-Mar-2014
4
– Modified: Figure 11
– Minor text changes
DocID023939 Rev 4
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STF13N60M2, STFI13N60M2
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