STF20N65M5, STFI20N65M5,
STFW20N65M5
N-channel 650 V, 0.160 Ω typ., 18 A MDmesh M5
Power MOSFETs in TO-220FP, I²PAKFP and TO-3PF packages
Datasheet - production data
Features
Order code
VDS @ TJmax
RDS(on) max
ID
710 V
0.190 Ω
18 A
STF20N65M5
STFI20N65M5
I2PAKFP (TO-281)
TO-220FP
3
TO-3PF
STFW20N65M5
2
1
Figure 1: Internal schematic diagram
Applications
D(2)
Extremely low RDS(on)
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
Switching applications
Description
These devices are N-channel Power MOSFET
based on the MDmesh™ M5 innovative vertical
process technology combined with the wellknown PowerMESH™ horizontal layout. The
resulting products offer extremely low onresistance, making them particularly suitable for
applications requiring high power and superior
efficiency.
G(1)
S(3)
AM01475v1_noZen_no Tab
Table 1: Device summary
Order code
Marking
STF20N65M5
STFI20N65M5
Package
TO-220FP
20N65M5
I²PAKFP (TO-281)
STFW20N65M5
March 2017
Packaging
Tube
TO-3FP
DocID024223 Rev 3
This is information on a product in full production.
1/18
www.st.com
Contents
STF20N65M5,STFI20N65M5,STFW20N65M5
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curve)........................................................ 6
3
Test circuits ..................................................................................... 9
4
Package information ..................................................................... 10
5
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4.1
TO-220FP package information ...................................................... 11
4.2
I²PAKFP (TO-281) package information ......................................... 13
4.3
TO-3PF package information .......................................................... 15
Revision history ............................................................................ 17
DocID024223 Rev 3
STF20N65M5,STFI20N65M5,STFW20N65M5
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Value
Symbol
VGS
Parameter
Unit
TO-220FP,
I²PAKFP
TO-3PF
Gate- source voltage
±25
V
ID
Drain current (continuous) at TC = 25 °C
18(1)
A
ID
Drain current (continuous) at TC = 100 °C
11.3(1)
A
36(1)
A
IDM
(2)
Drain current (pulsed)
PTOT
Total dissipation at TC = 25 °C
dv/dt (3)
Peak diode recovery voltage slope
15
Insulation withstand voltage (RMS) from all three leads
to external heat sink (t = 1 s; TC = 25 °C)
VISO(4)
Tstg
3500
- 55 to 150
Operating junction temperature range
W
V/ns
2500
Storage temperature range
Tj
48
30
V
°C
Notes:
(1)Limited
(2)Pulse
(3)I
SD
(4)V
by maximum junction temperature.
width limited by safe operating area
≤ 18 A, di/dt = 400 A/µs, VDS(peak) < V(BR)DSS, VDD = 400 V
DS
≤ 520 V
Table 3: Thermal data
Value
Symbol
Parameter
Unit
TO-220FP,
I²PAKFP
TO-3PF
Rthj-case
Thermal resistance junction-case
4.17
2.6
°C/W
Rthj-amb
Thermal resistance junction-ambient
62.5
50
°C/W
Table 4: Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax )
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
DocID024223 Rev 3
Value
Unit
4
°C/W
270
mJ
3/18
Electrical characteristics
2
STF20N65M5,STFI20N65M5,STFW20N65M5
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5: On /off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown
voltage
VGS = 0, ID = 1 mA
Min.
Typ.
Max.
Unit
650
V
VGS = 0, VDS = 650 V
1
µA
VGS = 0, VDS = 650 V,
TC=125 °C (1)
100
µA
Gate-body leakage
current
VDS = 0, VGS = ± 25 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
4
5
V
RDS(on)
Static drain-source onresistance
VGS = 10 V, ID = 9 A
0.160
0.190
Ω
Min.
Typ.
Max.
Unit
-
1434
-
pF
-
38
-
pF
-
3.7
-
pF
-
118
-
pF
-
35
-
pF
IDSS
Zero gate voltage
drain current
IGSS
3
Notes:
(1)Defined
by design, not subject to production test
Table 6: Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Co(tr)(1)
Test conditions
VGS = 0, VDS = 100 V,
f = 1 MHz
Equivalent capacitance
time related
VGS = 0, VDS = 0 to 520 V
Co(er)(2)
Equivalent capacitance
energy related
RG
Intrinsic gate resistance
f = 1 MHz, ID=0 A
-
3.5
-
Ω
Qg
Total gate charge
-
36
-
nC
Qgs
Gate-source charge
-
7.5
-
nC
Qgd
Gate-drain charge
VDD = 520 V, ID = 9 A,
VGS = 0 to 10 V
(see Figure 18: "Test circuit for
gate charge behavior")
-
18
-
nC
Notes:
(1)C
o(tr)
is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to
80% VDSS.
(2)C
o(er)
is a constant capacitance value that gives the same stored energy as Coss while V DS is rising from 0 to
80% VDSS.
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STF20N65M5,STFI20N65M5,STFW20N65M5
Electrical characteristics
Table 7: Switching times
Symbol
Parameter
td(V)
Voltage delay time
tr(V)
Voltage rise time
tf(i)
Current fall time
tc(off)
Crossing time
Test conditions
Min.
Typ.
Max.
Unit
VDD = 400 V, ID = 12 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19: "Test circuit for
inductive load switching and
diode recovery times" and Figure
22: "Switching time waveform")
-
43
-
ns
-
7.5
-
ns
-
7.5
-
ns
-
11.5
-
ns
Min.
Typ.
Max.
Unit
Table 8: Source drain diode
Symbol
Parameter
Test conditions
ISD
Source-drain current
-
18
A
ISDM(1)
Source-drain current
(pulsed)
-
36
A
VSD(2)
Forward on voltage
ISD = 18 A, VGS = 0
-
1.5
V
trr
Reverse recovery time
-
288
ns
Qrr
Reverse recovery
charge
-
4
µC
IRRM
Reverse recovery
current
ISD = 18 A,
di/dt = 100 A/µs
VDD = 100 V
(see Figure 19: "Test circuit for
inductive load switching and
diode recovery times")
-
27
A
ISD = 18 A,
di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 19: "Test circuit for
inductive load switching and
diode recovery times")
-
342
ns
-
4.7
µC
-
28
A
trr
Reverse recovery time
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
Notes:
(1)Pulse
width limited by safe operating area
(2)Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
DocID024223 Rev 3
5/18
Electrical characteristics
2.1
STF20N65M5,STFI20N65M5,STFW20N65M5
Electrical characteristics (curve)
Figure 2: Safe operating area for TO-220FP and
I²PAKFP
Figure 3: Thermal impedance for for TO-220FP and
I²PAKFP
Figure 4: Safe operating area for TO-3PF
Figure 5: Thermal impedance for TO-3PF
d
0.2
0.1
0.05
0.02
0.01
Figure 7: Tranfer characteristics
Figure 6: Output characteristics
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STF20N65M5,STFI20N65M5,STFW20N65M5
Figure 8: Gate charge vs gate-source voltage
Electrical characteristics
Figure 9: Static drain-source on-resistance
W
Figure 10: Capacitance variations
Figure 11: Output capacitance stored energy
Figure 12: Normalized gate threshold voltage vs
temperature
Figure 13: Normalized on-resistance vs temperature
DocID024223 Rev 3
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Electrical characteristics
STF20N65M5,STFI20N65M5,STFW20N65M5
Figure 14: Source-drain diode forward
characteristics
Figure 15: Normalized V(BR)DSS vs temperature
Figure 16: Switching energy vs gate resistance
Eon including reverse recovery of a SiC diode.
8/18
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STF20N65M5,STFI20N65M5,STFW20N65M5
3
Test circuits
Test circuits
Figure 17: Test circuit for resistive load
switching times
Figure 18: Test circuit for gate charge
behavior
Figure 19: Test circuit for inductive load
switching and diode recovery times
Figure 20: Unclamped inductive load test
circuit
Figure 21: Unclamped inductive waveform
Figure 22: Switching time waveform
AM05540v2_for_M5
DocID024223 Rev 3
9/18
Package information
4
STF20N65M5,STFI20N65M5,STFW20N65M5
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/18
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STF20N65M5,STFI20N65M5,STFW20N65M5
4.1
Package information
TO-220FP package information
Figure 23: TO-220FP package outline
DocID024223 Rev 3
11/18
Package information
STF20N65M5,STFI20N65M5,STFW20N65M5
Table 9: TO-220FP package mechanical data
mm
Dim.
Min.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
12/18
Typ.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
DocID024223 Rev 3
STF20N65M5,STFI20N65M5,STFW20N65M5
4.2
Package information
I²PAKFP (TO-281) package information
Figure 24: I²PAKFP (TO-281) package outline
8291506 Re v. C
DocID024223 Rev 3
13/18
Package information
STF20N65M5,STFI20N65M5,STFW20N65M5
Table 10: I²PAKFP (TO-281) mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
B
2.50
2.70
D
2.50
2.75
D1
0.65
0.85
E
0.45
0.70
F
0.75
1.00
F1
14/18
Max.
1.20
G
4.95
5.20
H
10.00
10.40
L1
21.00
23.00
L2
13.20
14.10
L3
10.55
10.85
L4
2.70
3.20
L5
0.85
L6
7.50
DocID024223 Rev 3
1.25
7.60
7.70
STF20N65M5,STFI20N65M5,STFW20N65M5
4.3
Package information
TO-3PF package information
Figure 25: TO-3PF package outline
DocID024223 Rev 3
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Package information
STF20N65M5,STFI20N65M5,STFW20N65M5
Table 11: TO-3PF mechanical data
mm
Dim.
Min.
Max.
A
5.30
5.70
C
2.80
3.20
D
3.10
3.50
D1
1.80
2.20
E
0.80
1.10
F
0.65
0.95
F2
1.80
2.20
G
10.30
11.50
G1
16/18
Typ.
5.45
H
15.30
L
9.80
L2
22.80
23.20
L3
26.30
26.70
L4
43.20
44.40
L5
4.30
4.70
L6
24.30
24.70
L7
14.60
15
N
1.80
2.20
R
3.80
4.20
Dia
3.40
3.80
DocID024223 Rev 3
15.70
10
10.20
STF20N65M5,STFI20N65M5,STFW20N65M5
5
Revision history
Revision history
Table 12: Document revision history
Date
Revision
01-Feb-2013
1
First release. Part numbers previously included in datasheet
DM00049308
2
Added device in TO-3PF.
Modified: Table 2: "Absolute maximum ratings", Table 5: "On /off
states".
Modified: Figure 2: "Safe operating area for TO-220FP and I²PAKFP",
Figure 4: "Safe operating area for TO-3PF", Figure 5: "Thermal
impedance for TO-3PF".
Minor text changes
3
Modified Table 2: "Absolute maximum ratings", Table 8: "Source drain
diode".
Modified Figure 2: "Safe operating area for TO-220FP and I²PAKFP",
Figure 4: "Safe operating area for TO-3PF", Figure 12: "Normalized
gate threshold voltage vs temperature ", Figure 13: "Normalized onresistance vs temperature" and Figure 14: "Source-drain diode
forward characteristics ".
Minor text changes.
21-Jul-2016
22-Mar-2017
Changes
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STF20N65M5,STFI20N65M5,STFW20N65M5
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