STFI20NM65N
N-channel 650 V, 15 A, 0.250 Ω typ., MDmesh™ II
Power MOSFET in a I²PAKFP package
Datasheet - production data
Features
Order code
VDSS @Tjmax
RDS(on) max.
ID
STFI20NM65N
710 V
0.270 Ω
15 A
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
1
2
I 2PAKFP
3
Applications
(TO-281)
• Switching applications
Figure 1. Internal schematic diagram
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
'
*
6
$0Y
Table 1. Device summary
Order code
Marking
Packages
Packaging
STFI20NM65N
20NM65N
I2PAKFP (TO-281)
Tube
December 2013
This is information on a product in full production.
DocID025737 Rev 1
1/12
www.st.com
Contents
STFI20NM65N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
.............................................. 8
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STFI20NM65N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain source voltage
650
V
VGS
Gate source voltage
± 25
V
(1)
ID
Drain current continuous TC =25 °C
15
A
ID
Drain current continuous TC =100 °C
9.45
A
Drain current pulsed
60
A
Total dissipation at TC=25 °C
30
W
Peak diode recovery voltage slope
15
V/ns
2500
V
-55 to 150
150
°C
Value
Unit
IDM
(2)
PTOT
dv/dt
(3)
VISO
Insulation withstand voltage (RMS) from all three leads
to external heatsink
(t=1 s; TC = 25 °C)
Tstg
TJ
Storage temperature
Max. operating junction temperature
1. Limited only by maximum temperature allowed.
2. Pulse width limited by safe operating area.
3. ISD ≤ 15 A, di/dt ≤ 400 A/μs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Table 3. Thermal data
Symbol
Parameters
Rthjc
Thermal resistance junction-case max.
4.17
°C/W
Rthja
Thermal resistance junction-ambient max.
62.5
°C/W
Value
Unit
Table 4. Avalanche characteristics
Symbol
Parameters
IAS
Avalanche current, repetitive or not-repetitive (pulse
width limited by Tj max)
4
A
EAS
Single pulse avalanche energy (starting TJ = 25 °C,
ID = IAR, VDD = 50 V)
115
mJ
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Electrical characteristics
2
STFI20NM65N
Electrical characteristics
(TC = 25 °C unless otherwise specified).
Table 5. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS = 0
Min.
Typ.
Max.
Unit
650
V
1
μA
VDS = 650 V, TC=0
100
μA
Gate body leakage
(VDS=0)
VGS= ±25 V, VDS=0
100
nA
VGS(th)
Gate threshold voltage
ID = 250 μA,
VGS =VDS
4
V
RDS(on)
Static drain-source
on- resistance
ID=7.5 A, VGS=10 V
lDSS
lGSS
Zero gate voltage drain
current (VGS=0)
VDS = 650 V
2
3
Ω
0.250 0.270
Table 6. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse capacitance
Test conditions
VDS = 50 V, f = 1MHz, VGS = 0
Min.
Typ.
Max.
Unit
-
1280
-
pF
-
110
-
pF
-
10
-
pF
Equivalent output
capacitance
VDS = 0 to VGS = 0
-
260
-
pF
RG
Intrinsic gate resistance
f = 1MHz, ID=0
-
4.8
-
Ω
Qg
Total gate charge
-
44
-
nC
Qgs
Gate source charge
-
8
-
nC
Qgd
Gate-drain charge
-
22
-
nC
Coss eq (1)
VDD = 520 V, ID = 15 A,
VGS = 10 V
(see Figure 14)
1. Coss eq: defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80 % VDSS.
Table 7. Switching times
Symbol
td(on)
tr
td(off)
tf
4/12
Parameter
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 325 V, ID=7.5 A
Rg=4.7 Ω,
VGS=10 V
(see Figure 13)
(see Figure 18)
DocID025737 Rev 1
Min.
Typ.
Max.
Unit
-
15
-
ns
-
13.5
-
ns
-
75
-
ns
-
21
-
ns
STFI20NM65N
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source drain current
-
15
A
ISDM (1)
Source drain current
(pulsed)
-
60
A
VSD (2)
Forward on voltage
-
1.6
V
ISD = 15 A, VGS = 0
trr
Reverse recovery time
Qrr
I = 15 A, di/dt = 100 A/μs
Reverse recovery charge SD
VDD = 60 V (see Figure 15)
Reverse recovery current
IRRM
trr
Qrr
IRRM
-
455
ns
-
5.5
μC
-
24.5
A
Reverse recovery time
-
710
ns
ISD =15 A, di/dt = 100 A/μs
Reverse recovery charge VDD = 60 V, Tj = 150 °C
(see Figure 15)
Reverse recovery current
-
8
μC
-
24
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5 %.
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Electrical characteristics
2.1
STFI20NM65N
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
AM09139v1
ID
(A)
on
)
D
S(
O
p
Li er
m at
ite io
d ni
by n
m this
ax a
R rea
is
Tj=150°C
Tc=25°C
Single pulse
10
10µs
100µs
1ms
10ms
1
0.1
0.1
10
1
VDS(V)
100
Figure 4. Output characteristics
Figure 5. Transfer characteristics
AM09140v1
ID
(A)
35
VGS=10V
AM09141v1
ID
(A)
VDS=19V
35
30
30
6V
25
25
20
20
15
15
10
10
5V
5
0
0
5
5
10
15
4V
20 VDS(V)
Figure 6. Normalized V(BR)DSS vs temperature
AM09028v1
V(BR)DSS
(norm)
ID=1mA
1.10
0
0
2
4
6
8
10
VGS(V)
Figure 7. Static drain-source on-resistance
AM09143v1
RDS(on)
(Ω)
VGS=10V
0.260
1.08
1.06
0.255
1.04
0.250
1.02
1.00
0.245
0.98
0.96
0.94
0.92
-50 -25
6/12
0.240
0
25
50
75 100
TJ(°C)
0.235
0
DocID025737 Rev 1
2
4
6
8
10
12
14
ID(A)
STFI20NM65N
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
AM09144v1
VGS
(V)
VDS
VDS
(V)
VDD=520V
ID=15A
12
Figure 9. Capacitance variations
AM09145v1
C
(pF)
500
Ciss
1000
10
400
8
300
100
6
Coss
200
4
10
Crss
100
2
0
0
20
10
40
30
1
0.1
0
50 Qg(nC)
Figure 10. Normalized gate threshold voltage vs
temperature
AM09146v1
VGS(th)
(norm)
1
10
100
VDS(V)
Figure 11. Normalized on-resistance vs
temperature
AM09147v1
RDS(on)
(norm)
ID=250µA
1.10
2.1
ID=7.5A
VGS=10V
1.9
1.00
1.7
1.5
1.3
0.90
1.1
0.9
0.80
0.7
0.70
-50
-25
0
25
75 100
50
TJ(°C)
0.5
-50 -25
0
25
50
75 100
TJ(°C)
Figure 12. Source-drain diode forward
characteristics
AM09148v1
VSD
(V)
1.6
TJ=-50°C
1.4
TJ=25°C
1.2
TJ=150°C
1.0
0.8
0.6
0.4
0.2
0
2
4
6
8
10
12
14 16 ISD(A)
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Test circuits
3
STFI20NM65N
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 16. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/12
0
DocID025737 Rev 1
10%
AM01473v1
STFI20NM65N
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
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Package mechanical data
STFI20NM65N
Figure 19. I2PAKFP (TO-281) drawing
ĆUHY$
Table 9. I2PAKFP (TO-281) mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
B
2.50
2.70
D
2.50
2.75
D1
0.65
0.85
E
0.45
0.70
F
0.75
1.00
F1
10/12
Max.
1.20
G
4.95
H
10.00
10.40
L1
21.00
23.00
L2
13.20
14.10
L3
10.55
10.85
L4
2.70
3.20
L5
0.85
1.25
L6
7.30
7.50
-
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STFI20NM65N
5
Revision history
Revision history
Table 10. Revision history
Date
Revision
20-Dec-2013
1
Changes
Initial release.
DocID025737 Rev 1
11/12
12
STFI20NM65N
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