STFI28N60M2

STF28N60M2, STFI28N60M2 N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data Features Order code VDS @ TJmax RDS(on) max STF28N60M2 STFI28N60M2 0.150 Ω 22 A • Extremely low gate charge 3 1 650 V ID 2 TO-220FP 1 2 • Excellent output capacitance (Coss) profile 3 2 I PAKFP (TO-281) • 100% avalanche tested • Zener-protected Applications Figure 1. Internal schematic diagram • Switching applications • LCC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. AM15572v1 Table 1. Device summary Order code Marking Package STF28N60M2 TO-220FP 28N60M2 STFI28N60M2 February 2015 This is information on a product in full production. Packaging I 2PAKFP DocID025255 Rev 3 Tube (TO-281) 1/15 www.st.com Contents STF28N60M2, STFI28N60M2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 2/15 .............................................. 8 4.1 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.2 I2PAK (TO-281) package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 DocID025255 Rev 3 STF28N60M2, STFI28N60M2 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit ± 25 V 22 (1) A Drain current (continuous) at TC = 100 °C 14 (1) A IDM (2) Drain current (pulsed) 88(1) A PTOT VGS ID Parameter Gate-source voltage Drain current (continuous) at TC = 25 °C ID Total dissipation at TC = 25 °C 30 W (3) Peak diode recovery voltage slope 15 V/ns (4) MOSFET dv/dt ruggedness 50 V/ns 2500 V - 55 to 150 °C Value Unit dv/dt dv/dt VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj Operating junction temperature 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 22 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD= 400 V. 4. VDS ≤ 480 V Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max 4.17 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Value Unit Table 4. Avalanche characteristics Symbol Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 3.6 A EAS Single pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD=50V) 350 mJ DocID025255 Rev 3 3/15 15 Electrical characteristics 2 STF28N60M2, STFI28N60M2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 IDSS VDS = 600 V Zero gate voltage drain current (VGS = 0) VDS = 600 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Min. Typ. Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance Unit 600 V 1 µA 100 µA ±10 µA 3 4 V 0.135 0.150 Ω Min. Typ. Max. Unit - 1440 - pF - 70 - pF - 2 - pF VGS = ± 25 V VGS(th) Max. 2 VGS = 10 V, ID = 11 A Table 6. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 - 104 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 5.5 - Ω Qg Total gate charge - 36 - nC Qgs Gate-source charge - 7.2 - nC Qgd Gate-drain charge VDD = 480 V, ID = 22 A, VGS = 10 V (see Figure 15) - 16 - nC VDS = 100 V, f = 1 MHz, VGS = 0 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Switching times Symbol td(on) tr td(off) tf 4/15 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 300 V, ID = 11 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14 and Figure 19) Fall time DocID025255 Rev 3 Min. Typ. Max. Unit - 14.5 - ns - 7.2 - ns - 100 - ns - 8 - ns STF28N60M2, STFI28N60M2 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 22 A ISDM (1) Source-drain current (pulsed) - 88 A VSD (2) Forward on voltage - 1.6 V ISD trr ISD = 22 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 22 A, di/dt = 100 A/µs VDD = 60 V (see Figure 19) ISD = 22 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 19) - 350 ns - 4.7 µC - 27 A - 451 ns - 6.5 µC - 29 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID025255 Rev 3 5/15 15 Electrical characteristics 2.1 STF28N60M2, STFI28N60M2 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM17988v1 ID (A) is ea ) a r S(on D R t x in n ma tio by a r pe ed O imit L s hi 10 10µs 100µs 1 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 1 100 10 VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics AM17989v1 ID (A) VGS=7, 8, 9, 10V 50 AM17990v1 ID (A) VDS=18V 50 6V 40 40 30 30 5V 20 20 10 10 4V 0 0 5 10 15 20 Figure 6. Gate charge vs gate-source voltage AM17991v1 VDS VGS (V) 12 (V) VDD=480V ID=22A VDS 500 10 0 0 VDS(V) 400 8 2 4 6 8 10 VGS(V) Figure 7. Static drain-source on-resistance AM17992v1 RDS(on) (Ω) VGS=10V 0.142 0.140 0.138 300 0.136 6 200 4 100 2 0 0 6/15 10 20 30 40 0 Qg(nC) 0.134 0.132 0.130 DocID025255 Rev 3 0 4 8 12 16 20 ID(A) STF28N60M2, STFI28N60M2 Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy AM17993v1 C (pF) AM17994v1 Eoss (µJ) 10 10000 8 Ciss 1000 6 100 Coss 4 10 2 Crss 1 0.1 1 100 10 Figure 10. Normalized gate threshold voltage vs temperature AM17995v1 VGS(th) 0 0 VDS(V) (norm) 100 200 300 400 500 600 VDS(V) Figure 11. Normalized on-resistance vs temperature AM17996v1 RDS(on) (norm) ID=11A ID=250µA 2.3 1.1 2.1 1.9 1.0 1.7 1.5 0.9 1.3 1.1 0.8 0.9 0.7 -50 0.5 -50 -25 0.7 -25 0 25 50 75 100 TJ(°C) Figure 12. Normalized V(BR)DSS vs temperature AM117997 V(BR)DSS 1.11 ID=1mA 0 25 50 75 100 TJ(°C) Figure 13. Source-drain diode forward characteristics AM17998v1 VSD (V) 1.4 1.2 1.07 TJ=-50°C 1 1.03 0.8 TJ=25°C 0.6 0.99 TJ=150°C 0.4 0.95 0.91 -50 0.2 -25 0 25 50 75 100 TJ(°C) DocID025255 Rev 3 0 0 4 8 12 16 20 ISD(A) 7/15 15 Test circuits 3 STF28N60M2, STFI28N60M2 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 16. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 17. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform ton 9%5'66 tdon 9' toff tr tdoff tf 90% 90% ,'0 10% ,' 9'' 10% 0 9'' VDS 90% VGS $0Y 8/15 0 DocID025255 Rev 3 10% AM01473v1 STF28N60M2, STFI28N60M2 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID025255 Rev 3 9/15 15 Package information 4.1 STF28N60M2, STFI28N60M2 TO-220FP package information Figure 20. TO-220FP outline 7012510_Rev_K_B 10/15 DocID025255 Rev 3 STF28N60M2, STFI28N60M2 Package information Table 9. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID025255 Rev 3 11/15 15 Package information 4.2 STF28N60M2, STFI28N60M2 I2PAK (TO-281) package information Figure 21. I2PAKFP (TO-281) outline 5HY& 12/15 DocID025255 Rev 3 STF28N60M2, STFI28N60M2 Package information Table 10. I2PAKFP (TO-281) mechanical data mm Dim. Min. Typ. Max. A 4.40 - 4.60 B 2.50 2.70 D 2.50 2.75 D1 0.65 0.85 E 0.45 0.70 F 0.75 1.00 F1 1.20 G 4.95 5.20 H 10.00 10.40 L1 21.00 23.00 L2 13.20 14.10 L3 10.55 10.85 L4 2.70 3.20 L5 0.85 1.25 L6 7.50 7.60 DocID025255 Rev 3 7.70 13/15 15 Revision history 5 STF28N60M2, STFI28N60M2 Revision history Table 11. Document revision history Date Revision 13-Sep-2013 1 First release. 2 – – – – – – – – – – – 3 – Updated title, description and features in cover page. – Updated Table 2.: Absolute maximum ratings and Table 4.: Avalanche characteristics. – Updated Figure 12.: Normalized V(BR)DSS vs temperature. – Updated 4: Package information. – Minor text changes. 29-Jan-2014 13-Feb-2015 14/15 Changes Added: I2PAKFP package Modified: title, ID value and features in cover page Modified: ID, IDM and PTOT values in Table 2 Modified: note 3 Modified: Rthj-case value in Table 3 Modified: the entire typical values in Table 4, 6, 7 and 8 Modified: RDS(on) typical value Modified: Figure 7 and 8 Updated: Table 9 and Figure 14 Added: Section 4: Package information Minor text changes DocID025255 Rev 3 STF28N60M2, STFI28N60M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved DocID025255 Rev 3 15/15 15