STB31N65M5, STF31N65M5
STP31N65M5, STW31N65M5
Datasheet
N-channel 650 V, 0.124 Ω, 22 A, MDmesh M5 Power MOSFETs in D2PAK,
TO‑220FP, TO‑220 and TO-247 packages
Features
TAB
Order code
1
D2PAK
1
2
RDS(on ) max.
ID
Package
STF31N65M5
TAB
STP31N65M5
1
2
3
TO-247
1
2
710 V
0.148 Ω
STW31N65M5
3
D(2, TAB)
D2PAK
STB31N65M5
3
TO-220FP
TO-220
VDS @ TJMAX
3
•
Extremely low RDS(on)
•
•
•
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
22 A
TO-220FP
TO-220
TO-247
Applications
G(1)
•
S(3)
AM01475v1_noZen
Switching applications
Description
These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative
vertical process technology combined with the well-known PowerMESH horizontal
layout. The resulting products offer extremely low on-resistance, making them
particularly suitable for applications requiring high power and superior efficiency.
Product status link
STB31N65M5
STF31N65M5
STP31N65M5
STW31N65M5
DS8912 - Rev 4 - April 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Value
Symbol
Parameter
D²PAK, TO-220,
TO-220FP
TO-247
VGS
Gate-source voltage
±25
Drain current (continuous) at
ID
Drain current (continuous) at
TC = 100 °C
V
22
22 (1)
A
13.9
13.9 (1)
A
TC = 25 °C
ID
Unit
IDM (2)
Drain current (pulsed)
88
88 (1)
A
PTOT
Total power dissipation at TC = 25 °C
150
30
W
VISO
Insulation withstand voltage (RMS)
from all three leads to external
2500
V
heat-sink (t = 1 s, TC = 25 °C)
dv/dt (3)
dv/dt
(4)
Tj
Tstg
Peak diode recovery voltage slope
15
MOSFET dv/dt ruggedness
50
Operating junction temperature range
V/ns
-55 to 150
Storage temperature range
°C
1. Limited by package.
2. Limited by maximum junction temperature.
3. ISD ≤ 22 A, di/dt ≤ 400 A/μs; VDS (peak) < V(BR)DSS, VDD = 400 V.
4. VDS ≤ 480 V.
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-amb
Thermal resistance junction-ambient
Rthj-pcb (1)
Thermal resistance junction-pcb
Value
D²PAK
TO-220
TO-247
4.17
0.83
°C/W
50
°C/W
0.83
62.5
30
Unit
TO-220FP
°C/W
1. When mounted on FR-4 board of 1 inch², 2 oz Cu.
DS8912 - Rev 4
page 2/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
Electrical ratings
Table 3. Avalanche characteristics
Symbol
IAR
Parameter
Avalanche current, repetitive or not
repetitive
Value
Unit
5
A
410
mJ
(pulse width limited by Tjmax)
Single pulse avalanche energy
EAS
(starting Tj = 25 °C, ID = IAR,
VDD = 50 V)
DS8912 - Rev 4
page 3/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
Electrical characteristics
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4. On/off-state
Symbol
V(BR)DSS
Parameter
Drain-source breakdown voltage
Test conditions
VGS = 0 V, ID = 1 mA
Min.
Typ.
650
Zero gate voltage drain current
1
µA
100
µA
±100
nA
4
5
V
0.124
0.148
Ω
Min.
Typ.
Max.
Unit
-
1865
-
pF
-
45
-
pF
-
4.2
-
pF
-
146
-
pF
-
43
-
pF
VGS = 0 V, VDS = 650 V,
TC = 125 °C (1)
IGSS
Gate body leakage current
VDS = 0 V, VGS = ±25 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on-resistance
VGS = 10 V, ID = 11 A
Unit
V
VGS = 0 V, VDS = 650 V
IDSS
Max.
3
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol
Parameter
Test conditions
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
Co(tr) (1)
Equivalent capacitance time
related
Co(er) (2)
Equivalent capacitance energy
related
VDS = 0 to 520 V
Rg
Intrinsic gate resistance
f = 1 MHz
-
2.8
-
Ω
Qg
Total gate charge
VDD = 520 V, ID = 11 A
-
45
-
nC
Qgs
Gate-source charge
VGS= 0 to 10 V
-
11.5
-
nC
Qgd
Gate-drain charge
(see Figure 18. Test circuit for
gate charge behavior)
-
20
-
nC
VDS = 100 V, f = 1 MHz,
VGS = 0 V
VGS = 0 V,
1. Co(tr) is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to
80% VDSS.
2. Co(er) is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to
80% VDSS.
DS8912 - Rev 4
page 4/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(v)
Voltage delay time
VDD= 400 V, ID = 14 A,
-
46
-
ns
tr(v)
Voltage rise time
RG = 4.7 Ω
-
8
-
ns
Current fall time
VGS = 10 V
-
8.5
-
ns
Crossing time
(see Figure 19. Test circuit for
inductive load switching and
diode recovery times and
Figure 22. Switching time
waveform)
-
11
-
ns
Min.
Typ.
Max.
Unit
tf(i)
tc(off)
Table 7. Source-drain diode
Symbol
ISD
ISDM (1)
(2)
Parameter
Test conditions
Source-drain current
-
22
A
Source-drain current (pulsed)
-
88
A
1.5
V
Forward on voltage
ISD = 22 A, VGS = 0 V
-
trr
Reverse recovery time
-
336
ns
Qrr
Reverse recovery charge
-
5
μC
IRRM
Reverse recovery current
ISD = 22 A, di/dt = 100 A/μs,
VDD = 100 V (see
Figure 19. Test circuit for
inductive load switching and
diode recovery times)
-
30
A
Reverse recovery time
ISD = 22 A, di/dt = 100 A/μs,
-
406
ns
Qrr
Reverse recovery charge
-
6
μC
IRRM
Reverse recovery current
VDD= 100 V, Tj= 150 °C ( see
Figure 19. Test circuit for
inductive load switching and
diode recovery times)
-
31
A
VSD
trr
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
DS8912 - Rev 4
page 5/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area for D²PAK, TO-220 and
TO-247
Figure 2. Thermal impedance for D²PAK, TO-220 and
TO-247
AM15197v1
)
on
Op
Li erati
mi
o
ted n in
by thi
ma s ar
x R ea
is
D
ID
(A)
S(
10
10µs
100µs
1ms
1
10ms
0.1
10
1
0.1
100
VDS(V)
Figure 3. Safe operating area for TO-220FP
Figure 4. Thermal impedance for TO-220FP
AM15190v1
)
S(
10
on
O
pe
m ratio
ite n
d
by in th
m is
ax ar
RD ea
is
ID
(A)
10µs
100µs
Li
1
1ms
10ms
0.1
0.01
0.1
10
1
100
VDS(V)
Figure 5. Output characteristics
Figure 6. Transfer characteristics
AM15193v1
ID
(A)
VGS= 9, 10 V
VGS= 8 V
40
30
VGS= 7 V
20
DS8912 - Rev 4
VDS= 25 V
40
30
20
10
0
AM15198v1
ID
(A)
VGS= 6 V
0
5
10
15
20
25 VDS(V)
10
0
3
4
5
6
7
8
9 VGS(V)
page 6/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
Electrical characteristics (curves)
Figure 7. Gate charge vs gate-source voltage
AM15199v1
VGS
(V)
VDS
(V)
VDD=520V
12
500
ID=11A
VDS
10
400
8
Figure 8. Static drain-source on-resistance
AM15200v1
RDS(on)
(W)
0.145
VGS=10V
0.140
0.135
0.130
300
6
200
4
0.125
0.120
0.115
100
2
0
0
20
10
30
0
50 Qg (nC)
40
Figure 9. Capacitance variations
10000
15
20
ID(A)
AM15195v1
Eoss
(µJ)
8
7
Ciss
1000
6
5
4
100
Coss
3
2
10
Crss
1
0.1
10
5
0
Figure 10. Output capacitance stored energy
AM15202v1
C
(pF)
0.110
0.105
1
10
100
VDS(V)
Figure 11. Normalized gate threshold voltage vs
temperature
AM05459v2
VGS(th)
(norm)
1.10
ID = 250 µA
VDS = VGS
1
0
0
100
200
300
400
500
600
VDS(V)
Figure 12. Normalized on-resistance vs temperature
AM05460v2
RDS(on)
(norm)
2.1
1.9
VGS= 10 V
ID= 11 A
1.7
1.00
1.5
1.3
0.90
1.1
0.9
0.80
0.7
0.70
-50 -25
DS8912 - Rev 4
0
25
50
75 100
TJ(°C)
0.5
-50 -25
0
25
50
75 100
TJ(°C)
page 7/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
Electrical characteristics (curves)
Figure 14. Normalized V(BR)DSS vs temperature
Figure 13. Source-drain diode forward characteristics
AM05461v1
VSD
(V)
AM10399v1
V(BR)DSS
(norm)
TJ=-50°C
1.08
1.2
ID = 1mA
1.06
1.0
1.04
0.8
1.02
TJ=25°C
1.00
0.6
TJ=150°C
0.98
0.4
0.96
0.2
0.0
0.94
0
2
4
6
8
0.92
-50 -25
10 ISD(A)
0
25
50
75 100
TJ(°C)
Figure 15. Switching energy vs gate resistance
AM15196v1
E (µJ)
300
VDD=400V
VGS=10V
ID=14A
Eon
250
200
150
Eoff
100
50
0
Note:
DS8912 - Rev 4
0
10
20
30
40
RG(W)
Eon including reverse recovery of a SiC diode.
page 8/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
Test circuits
3
Test circuits
Figure 17. Test circuit for resistive load switching times
Figure 18. Test circuit for gate charge behavior
VDD
12 V
2200
+ μF
3.3
μF
VDD
VD
VGS
1 kΩ
100 nF
RL
IG= CONST
VGS
RG
47 kΩ
+
pulse width
D.U.T.
2.7 kΩ
2200
μF
pulse width
D.U.T.
100 Ω
VG
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 19. Test circuit for inductive load switching and
diode recovery times
D
G
A
D.U.T.
S
25 Ω
A
B
L
A
B
3.3
µF
D
G
+
VD
100 µH
fast
diode
B
Figure 20. Unclamped inductive load test circuit
RG
1000
+ µF
2200
+ µF
VDD
3.3
µF
VDD
ID
D.U.T.
S
D.U.T.
Vi
_
pulse width
AM01471v1
AM01470v1
Figure 21. Unclamped inductive waveform
V(BR)DSS
Figure 22. Switching time waveform
Concept waveform for Inductive Load Turn-off
Id
VD
90%Vds
90%Id
Tdelay -off
IDM
Vgs
90%Vgs
on
ID
Vgs(I(t ))
VDD
VDD
10%Vds
10%Id
Vds
Trise
AM01472v1
DS8912 - Rev 4
Tfall
Tcross --over
AM05540v2
page 9/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
DS8912 - Rev 4
page 10/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
D²PAK (TO-263) package information
4.1
D²PAK (TO-263) package information
Figure 23. D²PAK (TO-263) type A package outline
0079457_25
DS8912 - Rev 4
page 11/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
D²PAK (TO-263) package information
Table 8. D²PAK (TO-263) type A package mechanical data
Dim.
mm
Min.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10.00
E1
8.30
8.50
8.70
E2
6.85
7.05
7.25
e
10.40
2.54
e1
4.88
5.28
H
15.00
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
DS8912 - Rev 4
Typ.
0.40
0°
8°
page 12/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
D²PAK (TO-263) package information
Figure 24. D²PAK (TO-263) type B package outline
0079457_26_B
DS8912 - Rev 4
page 13/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
D²PAK (TO-263) package information
Table 9. D²PAK (TO-263) type B mechanical data
Dim.
mm
Min.
Max.
A
4.36
4.56
A1
0
0.25
b
0.70
0.90
b1
0.51
0.89
b2
1.17
1.37
c
0.38
0.694
c1
0.38
0.534
c2
1.19
1.34
D
8.60
9.00
D1
6.90
7.50
E
10.15
10.55
E1
8.10
8.70
e
2.54 BSC
H
15.00
15.60
L
1.90
2.50
L1
1.65
L2
1.78
L3
L4
DS8912 - Rev 4
Typ.
0.25
4.78
5.28
page 14/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
D²PAK (TO-263) package information
Figure 25. D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint
DS8912 - Rev 4
page 15/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
D²PAK packing information
4.2
D²PAK packing information
Figure 26. D²PAK tape outline
DS8912 - Rev 4
page 16/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
D²PAK packing information
Figure 27. D²PAK reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
2.5mm min.width
Full radius
AM06038v1
Table 10. D²PAK tape and reel mechanical data
Tape
Dim.
DS8912 - Rev 4
Reel
mm
mm
Dim.
Min.
Max.
Min.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
Max.
330
13.2
26.4
30.4
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
page 17/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
D²PAK type B packing information
4.3
D²PAK type B packing information
Figure 28. D²PAK type B tape outline
Figure 29. D²PAK type B reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start
2.5mm min.width
G measured
at hub
AM06038v1
DS8912 - Rev 4
page 18/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
D²PAK type B packing information
Table 11. D²PAK type B reel mechanical data
Dim.
mm
Min.
A
DS8912 - Rev 4
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
Max.
13.2
26.4
30.4
page 19/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
TO-220FP package information
4.4
TO-220FP package information
Figure 30. TO-220FP package outline
7012510_Rev_12_B
DS8912 - Rev 4
page 20/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
TO-220FP package information
Table 12. TO-220FP package mechanical data
Dim.
mm
Min.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
DS8912 - Rev 4
Typ.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
page 21/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
TO-220 type A package information
4.5
TO-220 type A package information
Figure 31. TO-220 type A package outline
0015988_typeA_Rev_22
DS8912 - Rev 4
page 22/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
TO-220 type A package information
Table 13. TO-220 type A package mechanical data
Dim.
mm
Min.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.55
c
0.48
0.70
D
15.25
15.75
D1
DS8912 - Rev 4
Typ.
1.27
E
10.00
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13.00
14.00
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
page 23/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
TO-247 package information
4.6
TO-247 package information
Figure 32. TO-247 package outline
0075325_9
DS8912 - Rev 4
page 24/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
TO-247 package information
Table 14. TO-247 package mechanical data
Dim.
mm
Min.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
L2
DS8912 - Rev 4
Typ.
5.45
5.60
18.50
ØP
3.55
3.65
ØR
4.50
5.50
S
5.30
5.50
5.70
page 25/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
Ordering information
5
Ordering information
Table 15. Order codes
Order code
Marking
STB31N65M5
STF31N65M5
STP31N65M5
STW31N65M5
DS8912 - Rev 4
31N65M5
Package
Packing
D2PAK
Tape e reel
TO-220FP
TO-220
Tube
TO-247
page 26/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
Revision history
Table 16. Document revision history
Date
Revision
23-Feb-2012
1
Changes
First release.
– Modified note 2 under the Table 2.
10-Sep-2012
2
– Updated typical values in Table 4, 5 and 6.
– Added Section 2.1.
– Minor text changes on the cover page.
05-Mar-2013
3
Added dv/dt value on Table 2: Absolute maximum ratings.
The part number STFI31N65M5 has been moved to a separate datasheet.
Removed maturity status indication from cover page. The document status is production data.
15-Apr-2019
4
Updated features and description in cover page.
Updated Section 4 Package information.
Added Section 5 Ordering information.
Minor text changes.
DS8912 - Rev 4
page 27/29
STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
5
4.1
D²PAK (TO-263) package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.2
D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.3
D²PAK type B packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.4
TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.5
TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.6
TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27
DS8912 - Rev 4
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STB31N65M5,STF31N65M5,STP31N65M5,STW31N65M5
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service
names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
DS8912 - Rev 4
page 29/29