STFI34N65M5

STF34N65M5, STFI34N65M5 N-channel 650 V, 0.09 Ω typ., 28 A MDmesh™ V Power MOSFETs in TO-220FP, I2PAKFP, I2PAK packages Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID 710 V 0.11 Ω 28 A STF34N65M5 STFI34N65M5 • Worldwide best RDS(on) * area • Higher VDSS rating and high dv/dt capability 3 2 1 I2PAKFP(TO-281) TO-220FP • Excellent switching performance • 100% avalanche tested Applications Figure 1. Internal schematic diagram • Switching applications Description ' These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. * 6 $0Y Table 1. Device summary Order codes Marking STF34N65M5 Packages TO-220FP 34N65M5 STFI34N65M5 January 2014 This is information on a product in full production. Packaging Tube I2PAKFP DocID025778 Rev 1 (TO-281) 1/15 www.st.com Contents STF34N65M5, STFI34N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 .............................................. 9 DocID025778 Rev 1 STF34N65M5, STFI34N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VGS ID Parameter Gate-source voltage Drain current (continuous) at TC = 25 °C Value Unit ± 25 V (1) A 28 Drain current (continuous) at TC = 100 °C 17.7 (1) A IDM (1) Drain current (pulsed) 112 (1) A PTOT ID Total dissipation at TC = 25 °C 35 W dv/dt (2) Peak diode recovery voltage slope 15 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 V/ns 2500 V - 55 to 150 °C 150 °C Value Unit 3.57 °C/W 62.5 °C/W Value Unit 7 A 510 mJ VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj Max. operating junction temperature 1. Limited by maximum junction temperature. 2. ISD ≤ 28 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V. 3. VDS ≤ 480 V Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Table 4. Avalanche characteristics Symbol Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) EAS Single pulse avalanche energy (starting tj=25°C, Id= IAR; Vdd=50) DocID025778 Rev 1 3/15 15 Electrical characteristics 2 STF34N65M5, STFI34N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 IDSS Zero gate voltage VDS = 650 V drain current (VGS = 0) VDS = 650 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Min. Typ. Gate threshold voltage VDS = VGS, ID = 250 μA RDS(on) Static drain-source on-resistance Unit 650 V 1 100 μA μA ± 100 nA 4 5 V 0.09 0.11 Ω Min. Typ. Max. Unit - 2700 - pF - 75 - pF VGS = ± 25 V VGS(th) Max. 3 VGS = 10 V, ID = 14 A Table 6. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 6.3 - pF Co(tr)(1) Equivalent capacitance time related - 220 - pF Co(er)(2) Equivalent capacitance energy related - 63 - pF f = 1 MHz open drain - 1.95 - Ω VDD = 520 V, ID = 14 A, VGS = 10 V (see Figure 16) - 62.5 - nC - 17 - nC - 28 - nC VDS = 100 V, f = 1 MHz, VGS = 0 VDS = 0 to 520 V, VGS = 0 RG Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/15 DocID025778 Rev 1 STF34N65M5, STFI34N65M5 Electrical characteristics Table 7. Switching times Symbol td (v) Parameter Voltage delay time tr (v) Voltage rise time tf (i) Current fall time tc(off) Test conditions VDD = 400 V, ID = 18 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17 and Figure 20) Crossing time Min. Typ. Max. Unit - 59 - ns - 8.7 - ns - 7.5 - ns - 12 - ns Min. Typ. Table 8. Source drain diode Symbol Parameter Test conditions Max. Unit Source-drain current - 28 A ISDM (1) Source-drain current (pulsed) - 112 A VSD (2) Forward on voltage - 1.5 V ISD trr ISD = 28 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 28 A, di/dt = 100 A/μs VDD = 100 V (see Figure 20) ISD = 28 A, di/dt = 100 A/μs VDD = 100 V, Tj = 150 °C (see Figure 20) - 350 ns - 5.6 μC - 32 A - 422 ns - 7.4 μC - 35 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DocID025778 Rev 1 5/15 15 Electrical characteristics 2.1 STF34N65M5, STFI34N65M5 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM15317v1 ID (A) 100 is ea ar (on) s i DS th in ax R ion y m t a er d b Op mite Li 10 10µs 100µs 1 1ms Tj=150°C Tc=25°C 0.1 10ms Single pulse 0.01 0.1 10 1 VDS(V) 100 Figure 4. Output characteristics Figure 5. Transfer characteristics AM15319v1 ID (A) 80 VGS= 9 V VGS= 8 V 70 60 50 50 40 40 VGS= 7 V 30 30 20 20 10 10 VGS= 6 V 0 5 0 15 10 20 AM15321v1 VGS (V) 12 VDS (V) 500 VDD=520 V ID=14 A VDS 10 400 5 4 6 7 8 9 VGS(V) Figure 7. Static drain-source on-resistance AM15322v1 RDS(on) (Ω) 0.096 0.096 VGS=10V 0.094 0.092 8 300 6 0.09 0.088 200 4 100 2 0 0 3 25 VDS(V) Figure 6. Gate charge vs gate-source voltage 6/15 VDS= 25 V 70 60 0 AM15320v1 ID (A) 80 0.086 0.084 0.082 20 30 40 50 60 70 0 80 Qg(nC) 0.08 0 DocID025778 Rev 1 5 10 15 20 25 ID(A) STF34N65M5, STFI34N65M5 Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy AM15323v1 C (pF) AM15324v1 Eoss (µJ) 12 1000 10 Ciss 1000 8 6 100 Coss 4 10 Crss 1 0.1 1 10 100 0 0 VDS(V) Figure 10. Normalized gate threshold voltage vs temperature AM05459v1 VGS(th) (norm) 1.10 2 VDS = VGS ID = 250 µA 100 200 300 400 500 600 VDS(V) Figure 11. Normalized on-resistance vs temperature AM05460v1 RDS(on) (norm) 2.1 VGS = 10 V ID = 14 A 1.9 1.00 1.7 1.5 1.3 0.90 1.1 0.80 0.9 0.7 0.70 -50 -25 0 25 50 75 100 TJ(°C) Figure 12. Source-drain diode forward characteristics AM05461v1 VSD (V) 0.5 -50 -25 0 25 50 75 100 TJ(°C) Figure 13. Normalized VDS vs temperature AM10399v1 VDS (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 1.00 0.6 TJ=150°C 0.98 0.4 0.96 0.2 0 0.94 0 10 20 30 40 50 ISD(A) 0.92 -50 -25 DocID025778 Rev 1 0 25 50 75 100 TJ(°C) 7/15 15 Electrical characteristics STF34N65M5, STFI34N65M5 Figure 14. Switching losses vs gate resistance (1) AM15325v1 E (μJ) 500 Eon VDD=400 V VGS=10 V ID=18 A 400 300 200 Eoff 100 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/15 DocID025778 Rev 1 STF34N65M5, STFI34N65M5 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 17. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 18. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform Inductive Load Turn - off V(BR)DSS Id VD 90%Vds 90%Id td(v) IDM Vgs 90%Vgs on ID )) Vgs(I(t)) VDD VDD 10%Id 10%Vds Vds tr(v) AM01472v1 DocID025778 Rev 1 tf(i) tc(off) AM05540v1 9/15 15 Package mechanical data 4 STF34N65M5, STFI34N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/15 DocID025778 Rev 1 STF34N65M5, STFI34N65M5 Package mechanical data Figure 21. TO-220FP drawing 7012510_Rev_K_B DocID025778 Rev 1 11/15 15 Package mechanical data STF34N65M5, STFI34N65M5 Table 9. TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 12/15 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID025778 Rev 1 STF34N65M5, STFI34N65M5 Package mechanical data Figure 22. I2PAKFP (TO-281) drawing ĆUHY$ Table 10. I2PAKFP (TO-281) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 D1 0.65 0.85 E 0.45 0.70 F 0.75 1.00 F1 1.20 G 4.95 H 10.00 10.40 L1 21.00 23.00 L2 13.20 14.10 L3 10.55 10.85 L4 2.70 3.20 L5 0.85 1.25 L6 7.30 7.50 - DocID025778 Rev 1 5.20 13/15 15 Revision history 5 STF34N65M5, STFI34N65M5 Revision history Table 11. Document revision history 14/15 Date Revision 14-Jan-2014 1 Changes First release. Part numbers previously included in datasheet DocID022853 DocID025778 Rev 1 STF34N65M5, STFI34N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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