STFI5N95K3

STFI5N95K3 N-channel 950 V, 3 Ω typ., 4 A Zener-protected SuperMESH3™ Power MOSFET in I2PAKFP package Datasheet − production data Features 1 2 Order code VDS RDS(on) max ID PTOT STFI5N95K3 950 V 3.5 Ω 4A 25 W • Fully insulated and low profile package with increased creepage path from pin to heatsink plate 3 • 100% avalanche tested I2PAKFP (TO-281) • Extremely large avalanche performance • Gate charge minimized • Very low intrinsic capacitances Figure 1. Internal schematic diagram ' • Zener-protected Applications • Switching applications Description * 6 AM01476v1 This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. Table 1. Device summary Order code Marking Package Packaging STFI5N95K3 5N95K3 I2PAKFP (TO-281) Tube May 2013 This is information on a product in full production. DocID023624 Rev 1 1/13 www.st.com 13 Contents STFI5N95K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 9 DocID023624 Rev 1 STFI5N95K3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VGS ID ID Parameter Gate- source voltage Drain current (continuous) at TC = 25 °C Value Unit ±30 V (1) A (1) 4 Drain current (continuous) at TC = 100 °C 3 A IDM (2) Drain current (pulsed) 16(1) A PTOT Total dissipation at TC = 25 °C 25 W IAR Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max) 4 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 100 mJ 5 V/ns 2500 V -55 to 150 °C Value Unit 5 °C/W 62.5 °C/W dv/dt(3) Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s,TC = 25 °C) TJ Tstg Operating junction temperature Storage temperature 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. ISD ≤ 4 A, di/dt ≤ 100 A/µs, peak VDS ≤ V(BR)DSS Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max DocID023624 Rev 1 3/13 Electrical characteristics 2 STFI5N95K3 Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 4. On /off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 950 V IDSS Zero gate voltage VDS = 950 V drain current (VGS = 0) VDS = 950 V, TC=125 °C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) ±10 µA 4 5 V 3 3.5 Ω Min. Typ. Max. Unit - 460 - pF - 38 - pF - 1 - pF VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA RDS(on) Static drain-source onVGS = 10 V, ID = 2 A resistance 3 Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related VDS = 0 to 760 V, VGS = 0 - 970 - pF Co(er)(2) Equivalent capacitance energy related VDS = 0 to 760 V, VGS = 0 - 15 - pF Rg Gate input resistance f=1 MHz open drain - 5.5 - Ω Qg Total gate charge - 19 - nC Qgs Gate-source charge - 4.7 - nC Qgd Gate-drain charge VDD = 760 V, ID = 4 A, VGS = 10 V (see Figure 16) - 12 - nC VDS = 25 V, f = 1 MHz, VGS = 0 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/13 DocID023624 Rev 1 STFI5N95K3 Electrical characteristics Table 6. Switching times Symbol td(on) tr Parameter Test conditions Turn-on delay time VDD = 475 V, ID = 2 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15) Rise time td(off) tf Turn-off delay time Fall time Min. Typ. Max. Unit - 17 - ns - 7 - ns - 32 - ns - 18 - ns Table 7. Source drain diode Symbol ISD ISDM (1) VSD (2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 4 A Source-drain current (pulsed) - 16 A 1.6 V Forward on voltage ISD = 4 A, VGS = 0 - trr Reverse recovery time - 410 ns Qrr Reverse recovery charge - 3.5 µC IRRM Reverse recovery current ISD = 4 A, di/dt = 100 A/µs VDD= 60 V (see Figure 17) - 17 A ISD = 4 A, di/dt = 100 A/µs VDD= 60 V TJ = 150 °C (see Figure 17) - 516 ns - 4.1 µC - 16 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 8. Gate-source Zener diode Symbol V(BR)GSO Parameter Test conditions Gate-source breakdown voltage IGS= ± 1 mA, ID=0 Min. Typ. 30 - Max. Unit - V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. DocID023624 Rev 1 5/13 Electrical characteristics 2.1 STFI5N95K3 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance $0Y ,' $ LV  —V —V ' 6 RQ  2 /L SHU P DW LWH LR G QL E\ Q P WKL D[ VD  5 UH D   PV 7M ƒ& 7F ƒ& PV 6LQOJH SXOVH     9'69  Figure 4. Output characteristics Figure 5. Transfer characteristics $0Y ,' $ 9*6 9       9   9     $0Y 9'6 9 9'' 9 9'6  ,' $          9*69 Figure 7. Static drain-source on-resistance $0Y 5'6RQ 2KP 9*6 9       6/13       9'69 Figure 6. Gate charge vs gate-source voltage  9'6 9   9*6 9 $0Y ,' $        4JQ&    DocID023624 Rev 1      ,'$ STFI5N95K3 Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy $0Y & S) $0Y (RVV —-    &LVV    &RVV   &UVV         Figure 10. Normalized gate threshold voltage vs temperature $0Y 9*6WK QRUP    9'69 9'6 9*6 ,' —$          9'69 Figure 11. Normalized on-resistance vs temperature $0Y 5'6RQ QRUP 9*6 9 ,' $                  Figure 12. Source-drain diode forward characteristics 96' 9         7-ƒ& $0Y 7- ƒ&        7-ƒ& Figure 13. Normalized BVDSS vs temperature $0Y %9'66 QRUP ,' P$    7- ƒ&     7- ƒ&            ,6'$  DocID023624 Rev 1          7-ƒ& 7/13 Electrical characteristics STFI5N95K3 Figure 14. Maximum avalanche energy vs starting Tj $0Y ($6 P- ,' $ 9'' 9             8/13        7-ƒ& DocID023624 Rev 1 STFI5N95K3 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 17. Test circuit for inductive load switching and diode recovery times A A D.U.T. FAST DIODE B B AM01469v1 Figure 18. Unclamped inductive load test circuit L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID023624 Rev 1 10% AM01473v1 9/13 Package mechanical data 4 STFI5N95K3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/13 DocID023624 Rev 1 STFI5N95K3 Package mechanical data Table 9. I2PAKFP (TO-281) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 D1 0.65 0.85 E 0.45 0.70 F 0.75 1.00 F1 1.20 G 4.95 H 10.00 10.40 L1 21.00 23.00 L2 13.20 14.10 L3 10.55 10.85 L4 2.70 3.20 L5 0.85 1.25 L6 7.30 7.50 - 5.20 Figure 21. I2PAKFP (TO-281) drawing UHY$ DocID023624 Rev 1 11/13 Revision history 5 STFI5N95K3 Revision history Table 10. Document revision history 12/13 Date Revision 09-May-2013 1 Changes First release DocID023624 Rev 1 STFI5N95K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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