STFI6N65K3

STF6N65K3, STFI6N65K3, STU6N65K3 N-channel 650 V, 1.1 Ω typ., 5.4 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, IPAK Datasheet — production data Features Order codes VDSS RDS(on) max. ID Ptot STF6N65K3 STFI6N65K3 650 V < 1.3 Ω TAB 30 W 5.4 A STU6N65K3 110 W ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected 3 3 1 2 TO-220FP Figure 1. 1 2 2 1 3 I²PAKFP IPAK Internal schematic diagram D(2,TAB) Applications ■ Switching applications Description G(1) These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Table 1. S(3) AM01476v1 Device summary Order codes Marking STF6N65K3 STFI6N65K3 Package TO-220FP 6N65K3 I²PAKFP STU6N65K3 November 2012 This is information on a product in full production. Packaging Tube IPAK Doc ID 18424 Rev 2 1/16 www.st.com 16 Contents STF6N65K3, STFI6N65K3, STU6N65K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) .......................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 .............................................. 9 Doc ID 18424 Rev 2 STF6N65K3, STFI6N65K3, STU6N65K3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220FP I²PAKFP IPAK VDS Drain-source voltage 650 V VGS Gate- source voltage ± 30 V ID ID IDM (2) PTOT Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C 5.4 (1) 3 (1) 21.6 (1) 30 5.4 A 3 A 21.6 A 110 W IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 5.4 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 100 mJ ESD Gate-source human body model (C = 100 pF, R = 1.5 kΩ) 2.5 kV Peak diode recovery voltage slope 12 V/ns dv/dt (3) VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj 2500 V -55 to 150 °C 150 °C Max. operating junction temperature 1. Limited by package 2. Pulse width limited by safe operating area 3. ISD ≤ 5.4 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit TO-220FP I²PAKFP IPAK Rthj-case Thermal resistance junction-case max 4.17 1.14 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 100 °C/W Doc ID 18424 Rev 2 3/16 Electrical characteristics 2 STF6N65K3, STFI6N65K3, STU6N65K3 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 650 V IDSS Zero gate voltage VDS = 650 V drain current (VGS = 0) VDS = 650 V, TC=125 °C 0.8 50 µA µA IGSS Gate-body leakage current (VDS = 0) ±9 µA 3.75 4.5 V 1.1 1.3 Ω VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on Static drain-source on-resistance Table 5. Symbol Ciss Coss Crss 3 VGS = 10 V, ID = 2.7 A Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Co(tr)(1) Eq. capacitance time related Co(er)(2) Eq. capacitance energy related Test conditions Min. Typ. Max. Unit VDS = 50 V, f = 1 MHz, VGS = 0 - 880 65 12 - pF pF pF - 43 - pF - 27 - pF VGS = 0, VDS = 0 to 520 V RG Intrinsic gate resistance f = 1 MHz open drain - 3.5 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 500 V, ID = 5.4 A, VGS = 10 V (see Figure 18) - 33 4 21 - nC nC nC 1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/16 Doc ID 18424 Rev 2 STF6N65K3, STFI6N65K3, STU6N65K3 Table 6. Symbol td(on) tr td(off) tf Table 7. Electrical characteristics Switching times Parameter Test conditions Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 325 V, ID = 2.7 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Typ. - 14 10 44 24 Min. Typ. Max. Unit - ns ns ns ns Source drain diode Symbol trr Qrr Min. Test conditions Max. Unit - 5.4 21.6 A A ISD = 5.4 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5.4 A, di/dt = 100 A/µs VDD = 60 V (see Figure 22) - 285 5100 14 ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5.4 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 22) - 330 2500 15.5 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 8. Symbol V(BR)GSO Gate-source Zener diode Parameter Test conditions Gate-source breakdown voltage Igs=± 1 mA, ID=0 (open drain) Min. 30 Typ. Max. Unit - V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components Doc ID 18424 Rev 2 5/16 Electrical characteristics STF6N65K3, STFI6N65K3, STU6N65K3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP and I²PAKFP Figure 3. Thermal impedance for TO-220FP and I²PAKFP Figure 5. Thermal impedance for IPAK Figure 7. Transfer characteristics AM12960v1 ID (A) Tj=150°C Tc=25°C Single pulse 10 his 1 is ea ar (on) DS xR 10µs t in a ion m at by r e d Op mite Li 0.1 100µs 1ms 10ms 0.01 0.001 0.1 Figure 4. 10 1 100 VDS(V) Safe operating area for IPAK AM12961v1 ID (A) Tj=150°C Tc=25°C Single pulse 10µs n) (o 100µs DS Op Lim era ite tion d by in th m is ax ar R e a is 10 1 1ms 10ms 0.1 0.1 Figure 6. 10 1 100 VDS(V) Output characteristics AM12962v1 ID (A) VGS=10V 12 AM12963v1 ID (A) VDS=15V 10 10 8 8 6V 6 6 4 4 2 2 0 0 6/16 10 20 VDS(V) Doc ID 18424 Rev 2 0 0 2 4 6 8 VGS(V) STF6N65K3, STFI6N65K3, STU6N65K3 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. VGS (V) AM12964v1 VDS VDD=500V ID=5.4A 12 (V) 500 VDS 10 400 Static drain-source on-resistance AM12965v1 RDS(on) (Ω) VGS=10V 1.35 1.30 1.25 1.20 8 300 6 1.15 1.10 200 4 100 2 0 0 10 30 20 0 Qg(nC) Figure 10. Capacitance variations 1.00 0.95 0.90 0 1 3 2 4 5 ID(A) Figure 11. Output capacitance stored energy AM12966v1 C (pF) 1.05 AM12967v1 Eoss (µJ) 5 1000 Ciss 4 3 100 2 Coss 10 Crss 1 0.1 1 100 10 AM12968v1 (norm) 100 300 400 500 VDS(V) AM12969v1 RDS(on) VGS=10V ID=2.7A 2.5 1.00 200 Figure 13. Normalized on-resistance vs temperature (norm) ID=50µA VDS=VGS 1.10 0 0 VDS(V) Figure 12. Normalized gate threshold voltage vs temperature VGS(th) 1 2.0 1.5 0.90 1.0 0.80 0.5 0.70 -75 -25 25 75 125 TJ(°C) Doc ID 18424 Rev 2 0 -75 -25 25 75 125 TJ(°C) 7/16 Electrical characteristics STF6N65K3, STFI6N65K3, STU6N65K3 Figure 14. Normalized BVDSS vs temperature AM12970v1 BVDSS (norm) ID=1mA Figure 15. Source-drain diode forward characteristics AM12971v1 VSD (V) TJ=-50°C 1.0 1.10 TJ=25°C 0.8 1.05 TJ=150°C 0.6 1.00 0.4 0.95 0.90 -75 0.2 0 25 -25 75 125 TJ(°C) Figure 16. Maximum avalanche energy vs temperature AM12972v1 EAS (mJ) ID=5.4 A VDD=50 V 100 80 60 40 20 0 0 8/16 20 40 60 80 100 120 TJ(°C) Doc ID 18424 Rev 2 0 1 2 3 4 5 6 ISD(A) STF6N65K3, STFI6N65K3, STU6N65K3 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 21. Unclamped inductive waveform AM01471v1 Figure 22. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 18424 Rev 2 10% AM01473v1 9/16 Package mechanical data 4 STF6N65K3, STFI6N65K3, STU6N65K3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 10/16 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 18424 Rev 2 STF6N65K3, STFI6N65K3, STU6N65K3 Package mechanical data Figure 23. TO-220FP drawing 7012510_Rev_K_B Doc ID 18424 Rev 2 11/16 Package mechanical data Table 10. STF6N65K3, STFI6N65K3, STU6N65K3 I2PAKFP (TO-281) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 D1 0.65 0.85 E 0.45 0.70 F 0.75 1.00 F1 1.20 G 4.95 H 10.00 10.40 L1 21.00 23.00 L2 13.20 14.10 L3 10.55 10.85 L4 2.70 3.20 L5 0.85 1.25 L6 7.30 7.50 - 5.20 Figure 24. I2PAKFP (TO-281) drawing REV! 12/16 Doc ID 18424 Rev 2 STF6N65K3, STFI6N65K3, STU6N65K3 Table 11. Package mechanical data IPAK (TO-251) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 5.40 0.3 B5 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 4.60 H 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 o 10 Doc ID 18424 Rev 2 1.00 13/16 Package mechanical data STF6N65K3, STFI6N65K3, STU6N65K3 Figure 25. IPAK (TO-251) drawing 0068771_J 14/16 Doc ID 18424 Rev 2 STF6N65K3, STFI6N65K3, STU6N65K3 5 Revision history Revision history Table 12. Document revision history Date Revision 05-Apr-2011 1 First release 2 Added new part numbers: STFI6N65K3 in I²PAKFP package and STU6N65K3 in IPAK packages. Section 2.1: Electrical characteristics (curves) has been updated. Minor text changes. 07-Nov-2012 Changes Doc ID 18424 Rev 2 15/16 STF6N65K3, STFI6N65K3, STU6N65K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16 Doc ID 18424 Rev 2