STF9N60M2,
STFI9N60M2
N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus™ low Qg
Power MOSFETs in TO-220FP and I2PAKFP packages
Datasheet - production data
Features
Order codes
STF9N60M2
STFI9N60M2
1
2
RDS(on)
max
ID
650 V
0.78 Ω
5.5 A
• Extremely low gate charge
3
TO-220FP
VDS @
TJmax
1
2
I2PAKFP
• Lower RDS(on) x area vs previous generation
3
(TO-281)
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
Figure 1. Internal schematic diagram
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
AM15572v1
.
Table 1. Device summary
Order codes
Marking
STF9N60M2
March 2014
This is information on a product in full production.
Packaging
TO-220FP
9N60M2
STFI9N60M2
Package
I2PAKFP
DocID024728 Rev 2
Tube
1/15
www.st.com
Contents
STF9N60M2, STFI9N60M2
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/15
.............................................. 8
DocID024728 Rev 2
STF9N60M2, STFI9N60M2
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Value
Unit
± 25
V
(1)
A
Drain current (continuous) at TC = 100 °C
(1)
3.6
A
IDM (1)
Drain current (pulsed)
22(1)
A
PTOT
Total dissipation at TC = 25 °C
20
W
VISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t=1 s; TC=25 °C)
2500
V
VGS
ID
ID
Parameter
Gate-source voltage
Drain current (continuous) at TC = 25 °C
5.5
dv/dt (2)
Peak diode recovery voltage slope
15
dv/dt(3)
MOSFET dv/dt ruggedness
50
Tstg
Tj
V/ns
Storage temperature
- 55 to 150
°C
Max. operating junction temperature
150
1. Pulse width limited by safe operating area.
2. ISD ≤ 5.5 A, di/dt ≤ 400 A/µs; V DS peak < V(BR)DSS, VDD=400 V
3. VDS ≤ 480 V
Table 3. Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
6.25
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W
Value
Unit
2
A
105
mJ
Table 4. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetitive or not repetitive (pulse
width limited by Tjmax)
EAS
Single pulse avalanche energy (starting Tj=25°C,
ID= IAR; VDD=50)
DocID024728 Rev 2
3/15
15
Electrical characteristics
2
STF9N60M2, STFI9N60M2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
V(BR)DSS
Parameter
Drain-source
breakdown voltage
Test conditions
ID = 1 mA, VGS = 0
IDSS
VDS = 600 V
Zero gate voltage
drain current (VGS = 0) VDS = 600 V, TC=125 °C
IGSS
Gate-body leakage
current (VDS = 0)
Min.
Typ.
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on-resistance
Unit
600
V
1
µA
100
µA
±10
µA
3
4
V
0.72
0.78
Ω
Min.
Typ.
Max.
Unit
-
320
-
pF
-
18
-
pF
-
0.68
-
pF
VGS = ± 25 V
VGS(th)
Max.
2
VGS = 10 V, ID = 3 A
Table 6. Dynamic
Symbol
Parameter
Test conditions
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Coss eq.(1)
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0
-
88
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
6.5
-
Ω
Qg
Total gate charge
-
10
-
nC
Qgs
Gate-source charge
-
2
-
nC
Qgd
Gate-drain charge
VDD = 480 V, ID = 5.5 A,
VGS = 10 V
(see Figure 15)
-
5.1
-
nC
VDS = 100 V, f = 1 MHz,
VGS = 0
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS
Table 7. Switching times
Symbol
td(on)
tr
td(off)
tf
4/15
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off delay time
VDD = 300 V, ID = 3 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14 and Figure 19)
Fall time
DocID024728 Rev 2
Min.
Typ.
Max.
Unit
-
8.8
-
ns
-
7.5
-
ns
-
22
-
ns
-
13.5
-
ns
STF9N60M2, STFI9N60M2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Source-drain current
-
5.5
A
ISDM
(1)
Source-drain current (pulsed)
-
22
A
VSD
(2)
Forward on voltage
-
1.6
V
ISD
trr
ISD = 5.5 A, VGS = 0
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 5.5 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 16)
ISD = 5.5 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 16)
-
265
ns
-
1.65
µC
-
12.5
A
-
377
ns
-
2.3
µC
-
12.2
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID024728 Rev 2
5/15
15
Electrical characteristics
2.1
STF9N60M2, STFI9N60M2
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
AM15863v1
ID
(A)
10
s
ai
re n)
s a DS(o
i
th R
in ax
n
io by m
t
a
er ed
Op imit
L
1
10µs
100µs
1ms
Tj=150°C
Tc=25°C
Single pulse
0.1
0.01
0.1
100
10
1
10ms
VDS(V)
Figure 4. Output characteristics
Figure 5. Transfer characteristics
AM15865v1
ID
(A)
VGS=7, 8, 9, 10V
10
AM15866v1
ID
(A)
VDS=17 V
10
6V
8
8
6
6
5V
4
4
2
2
4V
0
5
0
10
20
15
0
VDS(V)
Figure 6. Gate charge vs gate-source voltage
VGS
(V)
12
AM15869v1
VDS
ID=5.5A
VDD=480V
VDS
(V)
2
0
4
6
8
10
VGS(V)
Figure 7. Static drain-source on-resistance
AM15868v1
RDS(on)
(Ω)
0.760
VGS=10A
500
0.750
10
400
0.740
8
300
6
200
4
0.720
0.710
100
2
0
0
6/15
0.730
2
4
6
8
10
0
Qg(nC)
0.700
0.690
DocID024728 Rev 2
0
1
2
3
4
5
ID(A)
STF9N60M2, STFI9N60M2
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Output capacitance stored energy
AM15870v1
C
(pF)
AM15874v1
Eoss
(µJ)
1000
Ciss
2
100
Coss
10
1
1
Crss
0.1
0.1
100
10
1
0
0
VDS(V)
Figure 10. Normalized gate threshold voltage vs
temperature
AM15871v1
VGS(th)
100
200
ID=250µA
600
VDS(V)
AM15872v1
RDS(on)
ID=3 A
VGS=10 V
2.5
1.15
500
Figure 11. Normalized on-resistance vs
temperature
(norm)
(norm)
400
300
2.3
1.1
2.1
1.05
1.9
1.0
1.7
0.95
1.5
0.9
1.3
0.85
1.1
0.8
0.9
0.7
0.75
0.7
-50
-25
0
25
50
75 100 125 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
AM15873v1
VSD
(V)
1.4
0.5
-50
0
25
50
75
100 125
TJ(°C)
Figure 13. Normalized V(BR)DSS vs temperature
AM15867v1
V(BR)DSS
(norm)
1.11
ID=1mA
1.09
1.2
TJ=-50°C
1.07
1.0
1.05
0.8
1.03
TJ=25°C
0.6
1.01
TJ=150°C
0.99
0.4
0.97
0.2
0.95
0
0
-25
1
2
3
4
5
ISD(A)
0.93
-50 -25
DocID024728 Rev 2
0
25
50
75 100 125
TJ(°C)
7/15
15
Test circuits
3
STF9N60M2, STFI9N60M2
Test circuits
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 16. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 17. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
ton
9%5'66
tdon
9'
toff
tr
tdoff
tf
90%
90%
,'0
10%
,'
9''
10%
0
9''
VDS
90%
VGS
$0Y
8/15
0
DocID024728 Rev 2
10%
AM01473v1
STF9N60M2, STFI9N60M2
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
DocID024728 Rev 2
9/15
15
Package mechanical data
4.1
STF9N60M2, STFI9N60M2
TO-220FP, STF9N60M2
Figure 20. TO-220FP drawing
7012510_Rev_K_B
10/15
DocID024728 Rev 2
STF9N60M2, STFI9N60M2
Package mechanical data
Table 9. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
DocID024728 Rev 2
11/15
15
Package mechanical data
4.2
STF9N60M2, STFI9N60M2
I2PAKFP (TO-281), STFI9N60M2
Figure 21. I2PAKFP (TO-281) drawing
UHY$
12/15
DocID024728 Rev 2
STF9N60M2, STFI9N60M2
Package mechanical data
Table 10. I2PAKFP (TO-281) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
B
2.50
2.70
D
2.50
2.75
D1
0.65
0.85
E
0.45
0.70
F
0.75
1.00
F1
1.20
G
4.95
H
10.00
10.40
L1
21.00
23.00
L2
13.20
14.10
L3
10.55
10.85
L4
2.70
3.20
L5
0.85
1.25
L6
7.30
7.50
-
DocID024728 Rev 2
5.20
13/15
15
Revision history
5
STF9N60M2, STFI9N60M2
Revision history
Table 11. Document revision history
14/15
Date
Revision
Changes
03-Jun-2013
1
First release.The part number was previously included in datasheet
DocID024399.
10-Mar-2014
2
Added: I2PAKFP package
Minor text changes
DocID024728 Rev 2
STF9N60M2, STFI9N60M2
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE
SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B)
AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS
OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT
PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS
EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY
DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE
DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2014 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
DocID024728 Rev 2
15/15
15