STFILED625

STFILED625, STPLED625 N-channel 620 V, 1.28 Ω typ., 5.0 A Power MOSFET in I2PAKFP and TO-220 packages Datasheet − preliminary data Features Order codes STFILED625 TAB 1 2 STPLED625 1 620 V 1.6 Ω PTOT ID ) s ( ct 25 W 5.0 A 70 W u d o • Extremely high dv/dt capability 2 r P e TO-220 I²PAKFP RDS(on) max • 100% avalanche tested 3 3 VDS • Gate charge minimized • Very low intrinsic capacitance t e l o • Improved diode reverse recovery characteristics Figure 1. Internal schematic diagram D(2,TAB) ) (s t c u G(1) d o r bs • LED lighting applications Description These Power MOSFETs boast extremely low onresistance and very good dv/dt capability, rendering them suitable for buck-boost and flyback topologies. P e t e l o s b OApplications • Zener-protected S(3) AM01476v1 O Table 1. Device summary Order codes Marking Package I2PAKFP (TO-281) STFILED625 Tube LED625 STPLED625 March 2013 Packaging TO-220 DocID024425 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/15 www.st.com 15 Contents STFILED625, STPLED625 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits .............................................. 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 2/15 DocID024425 Rev 1 STFILED625, STPLED625 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit I2PAKFP TO-220 VDS Drain- source voltage 620 V VGS Gate- source voltage ± 30 V ID ID IDM (2) PTOT Drain current (continuous) at TC = 25 °C 5.0(1) 5.0 Drain current (continuous) at TC = 100 °C 3.5(1) 3.5 Drain current (pulsed) 20.0(1) Total dissipation at TC = 25 °C 70 IAR Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) dv/dt(3) Peak diode recovery voltage slope di/dt(3) Diode reverse recovery current slope Insulation withstand voltage (AC) TJ Tstg Operating junction temperature Storage temperature ) (s o r P so b O VISO 25 4.2 e t e l ) s ( t c u d 20.0 A A A W A 120 mJ 12 V/ns 400 A/µs 2500 V - 55 to 150 °C t c u 1. Limited only by maximum temperature allowed d o r 2. Pulse width limited by safe operating area 3. ISD ≤ ID, peak VDS ≤ V(BR)DSS, VDD = 80% V(BR)DSS P e t e l o O bs Symbol Table 3. Thermal data Value Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max DocID024425 Rev 1 Unit I²PAKFP TO-220 5 1.79 62.50 °C/W °C/W 3/15 Electrical characteristics 2 STFILED625, STPLED625 Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 4. On /off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage VDS = 620 V drain current (VGS = 0) VDS = 620 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Min. Typ. Max. 620 V 1 50 µA µA ±10 µA 4.5 V 1.28 1.6 Ω Min. Typ. Max. Unit - 690 52 8.5 - pF pF pF ) s ( ct VGS = ± 20 V; VDS=0 VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 2.1 A e t e ol Unit u d o 3 3.6 Pr Table 5. Dynamic Symbol COSS eq(1) e t e ol bs O Qg Qgs Qgd )- s ( t c u d o s b O Test conditions Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss Rg Parameter VDS = 50 V, f = 1 MHz, VGS = 0 Equivalent output capacitance VGS = 0, VDS = 0 to 496 V Gate input resistance f=1 MHz open drain - 4 - Ω Total gate charge Gate-source charge Gate-drain charge VDD = 496 V, ID = 4.2 A, VGS = 10 V (see Figure 18) - 27 4 16 - nC nC nC Pr 16.6 pF 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 6. Switching times Symbol td(on) tr td(off) tf 4/15 Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 310 V, ID = 4.2 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) DocID024425 Rev 1 Min. Typ. - 12 8 40 21 Max Unit - ns ns ns ns STFILED625, STPLED625 Electrical characteristics Table 7. Source drain diode Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Parameter Test conditions Min. Typ. Max Source-drain current Source-drain current (pulsed) Unit - 4.2 16.8 A A 1.5 V Forward on voltage ISD = 4.2 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4.2 A, di/dt = 100 A/µs VDD= 60 V (see Figure 19) - 290 1900 13 ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4.2 A, di/dt = 100 A/µs VDD= 60 V TJ = 150 °C (see Figure 19) - 320 2200 14 ns nC A 1. Pulse width limited by safe operating area ) s ( ct u d o 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% r P e Table 8. Gate-source Zener diode Symbol V(BR)GSO Parameter t e l o Test conditions Gate-source breakdown voltage bs IGS= ± 1 mA, ID=0 Min. Typ. 30 - Max. Unit - V O ) The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device’s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. s ( t c u d o r P e t e l o s b O DocID024425 Rev 1 5/15 Electrical characteristics 2.1 STFILED625, STPLED625 Electrical characteristics (curves) Figure 2. Safe operating area for I2PAKFP Figure 3. Thermal impedance for I2PAKFP AM08241v1 ID (A) Tj=150°C Tc=25°C Single pulse 10 n) 100µs D S( o O Li per m at ite io d ni by n m this ax a R rea is 10µs 1 1ms ) s ( ct 10ms 0.1 0.01 0.1 10 1 100 u d o VDS(V) Figure 4. Safe operating area for TO-220 Tj=150°C Tc=25°C Single pulse 10 is 10µs 100µs on ) ) (s D S( O Li per m at ite io d ni by n m this ax a R rea 1 0.01 0.1 t c u 10ms d o r P e t e l o s b O 1ms 0.1 1 10 100 VDS(V) Figure 6. Output characteristics O t e l o AM08239v1 ID (A) bs r P e Figure 5. Thermal impedance TO-220 Figure 7. Transfer characteristics AM08243v1 ID (A) 10 VGS=10V 7V 8 6 4 3 4 6V 2 6/15 VDS=15V 5 6 0 0 AM08244v1 ID (A) 7 2 1 5 10 15 20 25 5V VDS(V) DocID024425 Rev 1 0 0 2 4 6 8 VGS(V) STFILED625, STPLED625 Electrical characteristics Figure 8. Gate charge vs gate-source voltage AM08245v1 VGS (V) VDS 12 Figure 9. Static drain-source on-resistance VGS VDD=496V ID=4.2A AM08246v1 RDS(on) (Ω) VGS=10V 1.38 500 1.36 10 400 1.34 8 1.32 300 1.30 6 200 1.28 4 1.26 100 2 ) s ( ct 1.24 0 0 10 5 15 20 0 30 Qg(nC) 25 Figure 10. Capacitance variations 1.22 1.0 3.0 u d o 4.0 ID(A) Figure 11. Output capacitance stored energy AM08247v1 C (pF) 2.0 Eoss (µJ) e t e ol Pr AM08248v1 4 1000 Ciss O ) 100 s ( t c 10 1 0.1 u d o 1 r P e 100 10 t e l o O 2 1 Crss 0 0 VDS(V) AM08249v1 (norm) bs 3 Coss Figure 12. Normalized gate threshold voltage vs temperature VGS(th) bs 100 200 300 400 500 VDS(V) Figure 13. Normalized on-resistance vs temperature AM08250v1 RDS(on) (norm) 1.10 2.5 1.00 2.0 1.5 0.90 1.0 0.80 0.5 0.70 -75 -25 25 75 125 TJ(°C) DocID024425 Rev 1 0 -75 -25 25 75 125 TJ(°C) 7/15 Electrical characteristics STFILED625, STPLED625 Figure 14. Source-drain diode forward characteristics Figure 15. Normalized BVDSS vs temperature AM08597v1 VSD (V) AM08596v1 BVDSS (norm) TJ=-50°C 1.0 1.10 0.9 1.05 0.8 TJ=25°C 0.7 1.00 TJ=150°C 0.6 ) s ( ct 0.95 0.5 0.4 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.90 -75 ISD(A) Figure 16. Maximum avalanche energy vs starting Tj e t e ol AM08598v1 EAS (mJ) 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0 ID=4.2 A VDD=50 V ) (s s b O t c u P e d o r 20 t e l o 40 60 80 100 120 140 TJ(°C) s b O 8/15 DocID024425 Rev 1 -25 25 du 75 o r P 125 TJ(°C) STFILED625, STPLED625 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. VG c u d 47kΩ 1kΩ AM01468v1 e t e ol Figure 19. Test circuit for inductive load switching and diode recovery times A A G D.U.T. FAST DIODE B B S s ( t c 3.3 μF B 25 Ω D 1000 μF s b O RG S r P e 2200 μF 3.3 μF VDD ID Vi D.U.T. Pw let AM01470v1 AM01471v1 Figure 21. Unclamped inductive waveform b O AM01469v1 L VD VDD u d o G so )- L=100μH o r P Figure 20. Unclamped inductive load test circuit A D ) s ( t 2.7kΩ PW PW D.U.T. Figure 22. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID024425 Rev 1 10% AM01473v1 9/15 Package mechanical data 4 STFILED625, STPLED625 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 10/15 DocID024425 Rev 1 STFILED625, STPLED625 Package mechanical data Table 9. I2PAKFP (TO-281) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 D1 0.65 0.85 E 0.45 0.70 F 0.75 1.00 ) s ( ct F1 1.20 G 4.95 H 10.00 L1 21.00 L2 13.20 L3 10.55 L4 2.70 L5 0.85 L6 7.30 du 5.20 - ete o r P ol )- s b O 10.40 23.00 14.10 10.85 3.20 1.25 7.50 s ( t c Figure 23. I2PAKFP (TO-281) drawing u d o r P e t e l o s b O UHY$ DocID024425 Rev 1 11/15 Package mechanical data STFILED625, STPLED625 Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 E 10 e 2.40 e1 4.95 F 1.23 H1 6.20 J1 2.40 L 13 L1 3.50 L30 10.40 du 2.70 3.75 du Q ete ol )- s b O s ( t c ∅P 2.65 o r P s b O 12/15 ) s ( ct 1.27 L20 e t e ol Max. DocID024425 Rev 1 o r P 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.85 2.95 STFILED625, STPLED625 Package mechanical data Figure 24. TO-220 type A drawing ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r 0015988_typeA_Rev_S P e t e l o s b O DocID024425 Rev 1 13/15 Revision history 5 STFILED625, STPLED625 Revision history Table 11. Document revision history Date Revision 25-Mar-2013 1 Changes First release. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 14/15 DocID024425 Rev 1 STFILED625, STPLED625 ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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