STFILED627

STFILED627, STPLED627 N-channel 620 V, 0.95 Ω typ., 7.0 A Power MOSFET in I²PAKFP and TO-220 Datasheet - production data Features TAB Order codes STFILED627 STPLED627 3 1 2 1 2 620 V ID • 100% avalanche tested PTOT ) s ( ct < 1.2 Ω 7.0 A 3 30 W u d o I²PAKFP TO-220 VDSS RDS(on) max. • Extremely high dv/dt capability r P e • Gate charge minimized Figure 1. Internal schematic diagram D(2,TAB) ) (s t c u d o r let o s b O t e l o • Improved diode reverse recovery characteristics s b OApplications • Zener-protected G(1) P e • Very low intrinsic capacitance S(3) Order codes AM01476v1 • LED lighting applications Description These Power MOSFETs boast extremely low onresistance and very good dv/dt capability, rendering them suitable for buck-boost and flyback topologies. Table 1. Device summary Marking Package STFILED627 I²PAKFP LED627 Tube STPLED627 August 2013 This is information on a product in full production. Packaging TO-220 DocID025170 Rev 1 1/15 www.st.com 15 Contents STFILED627, STPLED627 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ......................... 6 3 Test circuits .............................................. 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 2/15 DocID025170 Rev 1 STFILED627, STPLED627 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit I²PAKFP TO-220 VDS Drain-source voltage 620 V VGS Gate-source voltage ± 30 V Drain current (continuous) at TC = 25 °C 7.0(1) A (1) (s) ID ID IDM (2) Drain current (continuous) at TC = 100 °C 4.0 Drain current (pulsed) 22(1) PTOT Total dissipation at TC = 25 °C 30 IAR(3) Avalanche current, repetitive or not-repetitive 5.5 (4) EAS ESD dv/dt(5) Single pulse avalanche energy e t e l so Peak diode recovery voltage slope b O VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj ) (s ct Max. operating junction temperature u d o ct u d o 90 Pr 140 Gate-source human body model (R = 1.5 kΩ, C = 100 pF) A A W A mJ 2.5 kV 12 V/ns 2500 V -55 to 150 °C 150 °C 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. r P e 3. Pulse width limited by Tj max. 4. Starting Tj = 25 °C, ID = IAR, VDD = 50 V. t e l o 5. ISD ≤ 5.5 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS, VDSpeak ≤ V(BR)DSS. O bs Symbol Table 3. Thermal data Parameter Rthj-case Thermal resistance junction-case max. Rthj-amb Thermal resistance junction-ambient max. DocID025170 Rev 1 I²PAKFP TO-220 Unit 4.17 1.39 °C/W 62.5 °C/W 3/15 Electrical characteristics 2 STFILED627, STPLED627 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On /off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage VDS = 620 V drain current (VGS = 0) VDS = 620 V, TC = 125 °C IGSS Gate-body leakage current (VDS = 0) Min. Typ. Max. 620 Unit V 0.8 50 µA µA ±9 µA ) s ( ct VGS = ± 20 V du 4.5 V 0.95 1.2 Ω Min. Typ. Max. Unit - 890 110 18 - pF - 110 - pF - 18 - pF - 28 - pF - 63 - pF f = 1 MHz open drain - 3.5 - Ω VDD = 496 V, ID = 5.5 A, VGS = 10 V (see Figure 18) - 35 - nC - 4.5 - nC - 23 - nC VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on) Static drain-source onVGS = 10 V, ID = 2.8 A resistance e t e ol 3 o r P 3.6 Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance s b O Test conditions )- s ( t c VDS = 50 V, f = 1 MHz, VGS = 0 u d o r P e Equivalent output Coss(er)(1) capacitance energy related t e l o bs O Coss(tr)(2) Equivalent output capacitance time related RG Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VGS = 0, VDS = 0 to 480 V 1. It is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 2. It is defined as a constant equivalent capacitance giving the same storage energy as Coss when VDS increases from 0 to 80% VDSS. 4/15 DocID025170 Rev 1 STFILED627, STPLED627 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. - 22 - ns - 12 - ns - 49 - ns - 20 - ns Min. Typ. Turn-on delay time td(on) tr VDD = 310 V, ID = 2.75 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) Rise time td(off) Turn-off-delay time tf Fall time Table 7. Source-drain diode Symbol Test conditions Source-drain current ISD Source-drain current (pulsed) (2) Forward on voltage trr - ) s ( ct 27 A - 1.5 V - (1) ISDM VSD Parameter ISD = 5.5 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ) s ( ct e t e l - ISD = 5.5 A, di/dt = 100 A/µs VDD = 60 V (see Figure 22) o s b Max. Unit u d o Pr ISD = 5.5 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 22) Max. Unit - -O 5.5 A 290 ns 1.9 µC 13.5 A 335 ns 2.4 µC 14.5 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. u d o e t e ol Pr Symbol V(BR)GSO s b O Table 8. Gate-source Zener diode Parameter Gate-source breakdown voltage (ID = 0) Test conditions Igs = ± 1 mA Min. 30 Typ. Max. Unit - V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. DocID025170 Rev 1 5/15 Electrical characteristics 2.1 STFILED627, STPLED627 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 AM09051v1 ID (A) Tj=150°C Tc=25°C Single pulse 10 n) 100µs S( o Op Lim era ite tion d b in y m this ax ar RD ea is 10µs 1 0.1 0.1 1ms ) s ( ct 10ms 10 1 100 u d o VDS(V) Figure 4. Safe operating area for I²PAKFP ID (A) t e l o Tj=150°C Tc=25°C Single pulse 10 is ea ) ar on s DS( i th R in ax n io y m t b ra pe ed O imit L 1 ) (s 10µs 100µs t c u 0.1 d o r P e 0.01 0.1 1 10 100 s b O 1ms 10ms VDS(V) t e l o Figure 6. Output characteristics s b O r P e Figure 5. Thermal impedance for I²PAKFP AM09053v1 AM09054v1 ID (A) 12 Figure 7. Transfer characteristics AM09055v1 ID (A) 8 VGS=10V VDS=15V 7 10 6 8 6V 5 4 6 3 4 2 2 0 0 6/15 5V 10 20 VDS(V) DocID025170 Rev 1 1 0 0 2 4 6 8 10 VGS(V) STFILED627, STPLED627 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance AM09057v1 VGS (V) VDS(V) VDD=496V ID=5.5A 12 AM09056v1 RDS(on) (Ω) VGS=10V 1.15 500 VDS 1.10 10 400 8 1.05 300 1.00 6 200 0.95 4 100 2 0 20 10 0 0 Qg(nC) 30 0.85 0 Figure 10. Capacitance variations 1 Eoss (µJ) e t e ol 5 1000 Ciss 100 ) (s Coss 10 1 0.1 ct u d o 1 r P e 100 10 s b O t e l o (norm) s b O 3 5 4 u d o 6 ID(A) Pr AM09059v1 4 3 2 Crss 1 0 0 VDS(V) Figure 12. Normalized gate threshold voltage vs temperature VGS(th) 2 Figure 11. Output capacitance stored energy AM09058v1 C (pF) ) s ( ct 0.90 AM09061v1 100 200 300 400 500 VDS(V) Figure 13. Normalized on-resistance vs temperature AM09062v1 RDS(on) (norm) ID=50µA 1.10 ID=2.8A VGS=10V 2.5 1.00 2.0 1.5 0.90 1.0 0.80 0.5 0.70 -75 -25 25 75 125 TJ(°C) 0.0 -75 DocID025170 Rev 1 -25 25 75 125 TJ(°C) 7/15 Electrical characteristics STFILED627, STPLED627 Figure 14. Normalized BVDSS vs temperature Figure 15. Source-drain diode forward characteristics AM09060v1 BVDSS (norm) AM09063v1 VSD (V) TJ=-50°C ID=1mA 1.0 1.10 TJ=25°C 0.8 1.05 0.6 1.00 TJ=150°C 0.4 0.95 0.90 -75 25 -25 75 125 0 0 TJ(°C) 1 2 Figure 16. Maximum avalanche energy vs temperature ID=5.5 A VDD=50 V 140 120 ) (s 100 80 s b O t c u 60 40 d o r 20 P e 20 t e l o 40 60 80 100 120 140 TJ(°C) s b O 8/15 e t e ol AM09064v1 EAS (mJ) 160 0 0 ) s ( ct 0.2 DocID025170 Rev 1 3 du 4 o r P 5 6 ISD(A) STFILED627, STPLED627 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. VG u d o 47kΩ 1kΩ r P e AM01468v1 A A G FAST DIODE D.U.T. L=100μH S B B 25 Ω c u d D G RG ete t(s 3.3 μF B Figure 20. Unclamped Inductive load test circuit )- D 1000 μF s b O VD 2200 μF 3.3 μF VDD ID Vi D.U.T. Pw AM01470v1 l o s AM01471v1 Figure 21. Unclamped inductive waveform b O L VDD o r P S AM01469v1 t e l o Figure 19. Test circuit for inductive load switching and diode recovery times A ) s ( ct 2.7kΩ PW PW D.U.T. Figure 22. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID025170 Rev 1 10% AM01473v1 9/15 Package mechanical data 4 STFILED627, STPLED627 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. I2PAKFP (TO-281) mechanical data mm Dim. Min. Typ. 4.40 4.60 B 2.50 2.70 D 2.50 D1 0.65 E 0.45 F 0.75 u d o 2.75 e t e l G 4.95 H 10.00 L1 21.00 ) s ( ct L2 13.20 L3 u d o L4 Pr L5 o s b L6 -O - Pr 0.85 0.70 1.00 1.20 5.20 10.40 23.00 14.10 10.55 10.85 2.70 3.20 0.85 1.25 7.30 7.50 s b O 10/15 ) s ( ct A F1 e t e ol Max. DocID025170 Rev 1 STFILED627, STPLED627 Package mechanical data Figure 23. I2PAKFP (TO-281) drawings ) s ( ct u d o r P e t e l o ) (s s b O UHY$ t c u d o r P e t e l o s b O DocID025170 Rev 1 11/15 Package mechanical data STFILED627, STPLED627 Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 E 10 e 2.40 e1 4.95 F 1.23 H1 6.20 J1 2.40 L 13 L1 3.50 L30 10.40 du 2.70 3.75 du Q ete ol )- s b O s ( t c ∅P 2.65 o r P s b O 12/15 ) s ( ct 1.27 L20 e t e ol Max. DocID025170 Rev 1 o r P 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.85 2.95 STFILED627, STPLED627 Package mechanical data Figure 24. TO-220 type A drawings ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r 0015988_typeA_Rev_S P e t e l o s b O DocID025170 Rev 1 13/15 Revision history 5 STFILED627, STPLED627 Revision history Table 11. Document revision history Date Revision 28-Aug-2013 1 Changes First release. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 14/15 DocID025170 Rev 1 STFILED627, STPLED627 ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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