STFN42
High voltage fast-switching
NPN power transistor
Features
■
High voltage capability
■
Very high switching speed
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Applications
2
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Electronic ballasts for fluorescent lighting
■
Battery charger
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SOT-89
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Description
This device is a high voltage fast-switching NPN
power transistor, manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds.
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It employs a cellular emitter structure with planar
edge termination to enhance switching speeds,
while maintaining a wide RBSOA.
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Figure 1.
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Internal schematic diagram
C
(2, 4)
E
(3)
(1)
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Table 1.
Device summary
Order code
Marking
Packages
Packaging
STFN42
N42
SOT-89
Tape and reel
February 2012
Doc ID 12193 Rev 3
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www.st.com
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Electrical ratings
STFN42
Electrical ratings
1
Table 2.
Absolute maximum ratings
Symbol
Parameter
Unit
VCES
Collector-emitter voltage (VBE = 0)
700
V
VCEO
Collector-emitter voltage (IB = 0)
400
V
VEBO
Emitter-base voltage (IC = 0)
9
V
Collector current
1
A
Collector peak current (tP < 5 ms)
2
IC
ICM
IB
Base current
0.5
IBM
Base peak current (tP < 5 ms)
PTOT
Total dissipation at Ta = 25 °C
Tstg
Storage temperature
TJ
Thermal data
Symbol
Rthj-amb
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Thermal resistance junction ambient max
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Parameter
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Max. operating junction temperature
Table 3.
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Value
Doc ID 12193 Rev 3
Pr
A
1.4
W
-65 to 150
°C
150
Value
Unit
90
°C/W
STFN42
2
Electrical characteristics
Electrical characteristics
(Tcase = 25°C unless otherwise specified).
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
ICES
Collector cut-off current VCE = 700 V
(VBE = 0)
VCE = 700 V;
IEBO
Collector cut-off current
VEB = 9 V
(IC =0)
Collector-emitter
VCEO(sus)(1) sustaining voltage
(IB =0)
VCE(sat)
(1)
TC= 125 °C
IC = 10 mA
Collector-emitter
saturation voltage
400
IB = 0.05 A
IB = 0.125 A
hFE
tf
(1)
Base-emitter saturation
voltage
DC current gain
Inductive load
Fall time
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IC = 0.5 A
IB = 0.05 A
IB = 0.125 A
IC = 0.4 A
VCE = 5 V
IC = 0.8 A
VCE = 5 V
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IC = 0.25 A
0.2
0.3
0.4
IB = 0.25 A
0.1
0.5
mA
mA
0.1
mA
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Pr
IC = 0.25 A
IC = 0.5 A
IC = 0.75 A
VBE(sat) (1)
Min. Typ. Max. Unit
10
5
V
0.5
1
1.5
V
V
V
1
1.2
V
V
30
20
IC = 250 mA IB(on) = -IB(off) = 50 mA
L = 200 µH
0.3
µs
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.
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Electrical characteristics
2.1
STFN42
Electrical characteristics (curve)
Figure 2.
DC current gain (VCE=3 V)
Figure 3.
DC current gain (VCE=5 V)
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Figure 4.
Collector emitter saturation
voltage
Figure 5.
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Figure 6.
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Switching time inductive load
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Base emitter saturation
voltage
STFN42
3
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
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Package mechanical data
Table 5.
STFN42
SOT-89 mechanical data
mm
Dim.
Min.
Typ.
A
1.40
1.60
B
0.44
0.56
B1
0.36
0.48
C
0.35
0.44
C1
0.35
0.44
D
4.40
4.60
D1
1.62
1.83
D3
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0.90
E
2.29
e
1.42
e1
2.92
H
3.94
H1
2.70
K
1°
L
0.89
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Max.
Doc ID 12193 Rev 3
2.60
1.57
3.07
4.25
3.10
8°
1.20
0.25
90°
STFN42
Package mechanical data
Figure 7.
SOT-89 drawings
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Package mechanical data
Figure 8.
STFN42
SOT-89 recommended footprint dimension in millimeters
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STFN42
4
Document revision history
Document revision history
Table 6.
Document revision history
Date
Revision
Changes
16-Mar-2006
1
Initial release.
25-Jan-2011
2
Updated package mechanical data.
08-Feb-2012
3
Mechanical data updated
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STFN42
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Please Read Carefully:
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