STFU23N80K5
N-channel 800 V, 0.23 Ω typ., 16 A MDmesh™ K5
Power MOSFET in a TO-220FP ultra narrow leads package
Datasheet - production data
Features
1
2
Order code
VDS
RDS(on) max.
ID
PTOT
STFU23N80K5
800 V
0.28 Ω
16 A
35 W
3
TO-220FP
ultra narrow leads
Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
Applications
Figure 1: Internal schematic diagram
Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Table 1: Device summary
Order code
Marking
Package
Packing
STFU23N80K5
23N80K5
TO-220FP ultra narrow leads
Tube
February 2017
DocID030365 Rev 1
This is information on a product in full production.
1/12
www.st.com
Contents
STFU23N80K5
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ..................................................................................... 8
4
Package information ....................................................................... 9
4.1
5
2/12
TO-220FP ultra narrow leads package information ........................... 9
Revision history ............................................................................ 11
DocID030365 Rev 1
STFU23N80K5
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Value
Unit
Gate-source voltage
±30
V
Drain current (continuous) at Tcase = 25 °C
16
Drain current (continuous) at Tcase = 100 °C
10
IDM(1)
Drain current (pulsed)
64
A
PTOT
W
VGS
ID
Parameter
Total dissipation at Tcase = 25 °C
35
dv/dt(2)
Peak diode recovery voltage slope
4.5
dv/dt(3)
MOSFET dv/dt ruggedness
50
VISO
Insulation withstand voltage (RMS) from all three leads to external
heat sink (t= 1 s, TC= 25 °C)
Tstg
Storage temperature range
Tj
Operating junction temperature range
A
V/ns
2500
V
-55 to 150
°C
Value
Unit
Notes:
(1)Pulse
(2)I
SD
(3)V
width is limited by safe operating area.
≤ 16 A, di/dt=100 A/μs, VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS
DS
≤ 640 V
Table 3: Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
3.6
Rthj-amb
Thermal resistance junction-ambient
50
°C/W
Table 4: Avalanche characteristics
Symbol
Parameter
IAR(1)
Avalanche current, repetitive or not repetitive
EAS(2)
Single pulse avalanche energy
Value
Unit
5
A
400
mJ
Notes:
(1)Pulse
width limited by Tjmax.
(2)Starting
Tj = 25 °C, ID = IAR, VDD = 50 V.
DocID030365 Rev 1
3/12
Electrical characteristics
2
STFU23N80K5
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5: Static
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
Min.
Typ.
Max.
Unit
800
V
VGS = 0 V, VDS = 800 V
1
VGS = 0 V, VDS = 800 V,
Tcase = 125 °C(1)
50
Gate-body leakage current
VDS = 0 V, VGS = ±20 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
4
5
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 8 A
0.23
0.28
Ω
Min.
Typ.
Max.
Unit
-
1000
-
-
65
-
-
1.5
-
IDSS
Zero gate voltage drain
current
IGSS
3
µA
Notes:
(1)Defined
by design, not subject to production test.
Table 6: Dynamic
Symbol
Ciss
Parameter
Test conditions
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
Coss
Output capacitance
Crss
Reverse transfer capacitance
(1)
Equivalent output capacitance
VDS = 0 to 640 V, VGS = 0 V
-
165
-
CO(er)(2)
Equivalent output capacitance
VDS = 0 to 640 V, VGS = 0 V
-
59
-
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
4.7
-
VDD = 640 V, ID = 16 A,
VGS = 0 to 10 V
(see Figure 14: "Test circuit
for gate charge behavior")
-
33
-
-
6
-
-
25
-
CO(tr)
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
pF
pF
Ω
nC
Notes:
(1)Time
related is defined as a constant equivalent capacitance giving the same charging time as COSS when VDS
increases from 0 to 80% VDSS.
(2)Energy
related is defined as a constant equivalent capacitance giving the same stored energy as C OSS when
VDS increases from 0 to 80% VDSS.
4/12
DocID030365 Rev 1
STFU23N80K5
Electrical characteristics
Table 7: Switching times
Symbol
td(on)
tr
td(off)
tf
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min.
Typ.
Max.
Unit
VDD = 400 V, ID = 8 A
RG = 4.7 Ω, VGS = 10 V
(see Figure 13: "Test circuit for
resistive load switching times"
and Figure 18: "Switching time
waveform")
-
14
-
-
9
-
-
48
-
-
9
-
Min.
Typ.
Max.
Unit
ns
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
ISD
Source-drain current
-
16
A
ISDM(1)
Source-drain current
(pulsed)
-
64
A
VSD(2)
Forward on voltage
VGS = 0 V, ISD = 16 A
-
1.5
V
ISD = 16 A, di/dt = 100 A/µs,
VDD = 60 V
(see Figure 15: "Test circuit for
inductive load switching and
diode recovery times")
-
410
ns
-
7
µC
-
34
A
ISD = 16 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 15: "Test circuit for
inductive load switching and
diode recovery times")
-
650
ns
-
10
µC
-
32
A
Min.
Typ.
Max.
Unit
±30
-
-
V
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Table 9: Gate-source Zener diode
Symbol
V(BR)GSO
Parameter
Gate-source breakdown voltage
Test conditions
IGS = ±1 mA, ID = 0 A
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
DocID030365 Rev 1
5/12
Electrical characteristics
2.1
STFU23N80K5
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
6/12
DocID030365 Rev 1
STFU23N80K5
Electrical characteristics
Figure 8: Capacitance variations
Figure 9: Normalized gate threshold voltage vs
temperature
Figure 10: Normalized on-resistance vs temperature
Figure 11: Normalized V(BR)DSS vs temperature
Figure 12: Maximum avalanche energy vs temperature
DocID030365 Rev 1
7/12
Test circuits
3
8/12
STFU23N80K5
Test circuits
Figure 13: Test circuit for resistive load
switching times
Figure 14: Test circuit for gate charge
behavior
Figure 15: Test circuit for inductive load
switching and diode recovery times
Figure 16: Unclamped inductive load test
circuit
Figure 17: Unclamped inductive waveform
Figure 18: Switching time waveform
DocID030365 Rev 1
STFU23N80K5
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1
TO-220FP ultra narrow leads package information
Figure 19: TO-220FP ultra narrow leads package outline
8576148_1
DocID030365 Rev 1
9/12
Package information
STFU23N80K5
Table 10: TO-220FP ultra narrow leads mechanical data
mm
Dim.
Min.
10/12
Typ.
Max.
A
4.40
4.60
B
2.50
2.70
D
2.50
2.75
E
0.45
0.60
F
0.65
0.75
F1
-
0.90
G
4.95
5.20
G1
2.40
H
10.00
10.40
L2
15.10
15.90
L3
28.50
30.50
L4
10.20
11.00
L5
2.50
3.10
L6
15.60
16.40
L7
9.00
9.30
L8
L9
3.20
3.60
-
1.30
Dia.
3.00
3.20
DocID030365 Rev 1
2.54
2.70
STFU23N80K5
5
Revision history
Revision history
Table 11: Document revision history
Date
Revision
21-Feb-2017
1
Changes
First release
DocID030365 Rev 1
11/12
STFU23N80K5
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST
products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the
design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2017 STMicroelectronics – All rights reserved
12/12
DocID030365 Rev 1