STFW38N65M5

STF38N65M5, STFW38N65M5 N-channel 650 V, 0.073 Ω typ., 30 A MDmesh™ V Power MOSFETs in TO-220FP and TO-3PF packages Datasheet - production data Features Order codes VDS@ TJmax RDS(on) max ID 710 V 0.095 Ω 30 A STF38N65M5 STFW38N65M5 1 • Higher VDSS rating and high dv/dt capability 3 2 1 3 TO-220FP 2 1 • Excellent switching performance • 100% avalanche tested TO-3PF Applications Figure 1. Internal schematic diagram • Switching applications Description ' These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. * 6 $0Y Table 1. Device summary Order codes Marking Package STF38N65M5 TO-220FP 38N65M5 STFW38N65M5 April 2014 This is information on a product in full production. Packaging Tube TO-3PF DocID026215 Rev 1 1/16 www.st.com Contents STF38N65M5, STFW38N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 2/16 .............................................. 9 4.1 TO-220FP, STF38N65M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 TO-3PF, STFW38N65M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 DocID026215 Rev 1 STF38N65M5, STFW38N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220FP VGS Gate-source voltage ID(1) ID(1) IDM (1), (2) PTOT dv/dt (3) dv/dt (4) ± 25 V Drain current (continuous) at TC = 25 °C 30 A Drain current (continuous) at TC = 100 °C 19 A Drain current (pulsed) 120 A Total dissipation at TC = 25 °C 35 57 W Peak diode recovery voltage slope 15 V/ns MOSFET dv/dt ruggedness 50 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj TO-3PF 2500 3500 V -55 to 150 °C 150 °C Max. operating junction temperature 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area. 3. ISD ≤ 30 A, di/dt ≤ 400 A/μs; VPeak < V(BR)DSS, VDD = 400 V 4. VDS ≤ 520 V Table 3. Thermal data Value Symbol Parameter Unit TO-220FP TO-3PF Rthj-case Thermal resistance junction-case max 3.6 2.2 °C/W Rthj-amb 62.5 50 °C/W Thermal resistance junction-ambient max Table 4. Avalanche characteristics Symbol Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) EAS Single pulse avalanche energy (starting tj = 25°C, Id= IAR; Vdd= 50V) DocID026215 Rev 1 Value Unit 8 A 660 mJ 3/16 16 Electrical characteristics 2 STF38N65M5, STFW38N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS IDSS IGSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. Typ. Unit 650 V VDS = 650 V Zero gate voltage drain current (VGS = 0) VDS = 650 V, TC=125 °C Gate-body leakage current (VDS = 0) Max. 1 μA 100 μA ± 100 nA 4 5 V 0.073 0.095 Ω Min. Typ. Max. Unit - 3000 - pF - 74 - pF - 5.8 - pF - 244 - pF - 70 - pF f = 1 MHz open drain - 2.4 - Ω VDD = 520 V, ID = 15 A, VGS = 10 V (see Figure 18) - 71 - nC - 18 - nC - 30 - nC VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA RDS(on) Static drain-source on-resistance 3 VGS = 10 V, ID = 15 A Table 6. Dynamic Symbol Ciss Parameter Test conditions Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related Co(er)(2) Equivalent capacitance energy related VDS = 100 V, f = 1 MHz, VGS = 0 VDS = 0 to 520 V, VGS = 0 RG Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/16 DocID026215 Rev 1 STF38N65M5, STFW38N65M5 Electrical characteristics Table 7. Switching times Symbol td (v) Parameter Voltage delay time tr (v) Voltage rise time tf (i) Current fall time tc(off) Test conditions VDD = 400 V, ID = 20 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19 and Figure 22) Crossing time Min. Typ. Max. Unit - 66 - ns - 9 - ns - 9 - ns - 13 - ns Min. Typ. Table 8. Source drain diode Symbol Parameter Test conditions Max. Unit Source-drain current - 30 A ISDM (1) Source-drain current (pulsed) - 120 A VSD (2) Forward on voltage - 1.5 V ISD trr ISD = 30 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 30 A, di/dt = 100 A/μs VDD = 100 V (see Figure 22) ISD = 30 A, di/dt = 100 A/μs VDD = 100 V, Tj = 150 °C (see Figure 22) - 382 ns - 6.6 μC - 35 A - 522 ns - 10.3 μC - 40 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DocID026215 Rev 1 5/16 16 Electrical characteristics 2.1 STF38N65M5, STFW38N65M5 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP AM12635v1 ID (A) 100 is ea n) ar (o s RDS i th in max n tio by a d r pe ite O Lim 10 10µs 100µs 1 1ms 10ms Tj=150°C Tc=25°C 0.1 Sinlge pulse 0.01 0.1 10 1 100 VDS(V) Figure 4. Safe operating area for TO-3PF GIPG040420141132SA ID (A) Figure 5. Thermal impedance for TO-3PF GIPG040420141142SA K δ=0.5 0.2 100 is e a n) a r (o s R DS i th in max n tio by a d r pe ite O Lim 10 10µs 0.1 10 -1 0.05 100µs 0.02 1ms 1 10ms Tj=150°C Tc=25°C 0.1 0.01 0.1 Single pulse Sinlge pulse 1 10 100 VDS(V) Figure 6. Output characteristics GIPG040420141156SA ID (A) 80 c 0.01 10 -2 VGS = 9, 10 V 10 -3 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 tp(s) 10 0 Figure 7. Transfer characteristics GIPG040420141218SA ID (A) 80 VDS= 25V VGS = 8 V 60 VGS = 7 V 40 40 20 0 0 6/16 60 VGS = 6 V 20 0 5 10 15 20 VDS(V) DocID026215 Rev 1 3 4 5 6 7 8 VGS(V) STF38N65M5, STFW38N65M5 Electrical characteristics Figure 8. Gate charge vs gate-source voltage AM12639v1 VDS VGS (V) VDD=520V (V) ID=15A 500 VDS 12 Figure 9. Static drain-source on-resistance AM12640v1 RDS(on) (Ω) 0.088 VGS=10V 0.076 400 300 8 0.074 0.072 0.070 200 0.068 4 100 0 0 20 40 60 0 Qg(nC) 80 Figure 10. Capacitance variations 0.064 0 5 10 15 20 25 ID(A) Figure 11. Output capacitance stored energy AM12641v1 C (pF) 0.066 AM12642v1 Eoss (µJ) 14 10000 12 Ciss 1000 10 8 100 6 Coss 4 10 2 Crss 1 0.1 1 10 100 Figure 12. Normalized gate threshold voltage vs temperature AM05459v1 VGS(th) (norm) 1.10 0 0 VDS(V) ID = 250 µA 100 200 300 400 500 600 VDS(V) Figure 13. Normalized on-resistance vs temperature RDS(on) (norm) 2.1 AM05460v1 VGS = 10 V ID = 15 A 1.9 1.00 1.7 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 0 25 50 75 100 TJ(°C) 0.5 -50 -25 DocID026215 Rev 1 0 25 50 75 100 TJ(°C) 7/16 16 Electrical characteristics STF38N65M5, STFW38N65M5 Figure 14. Source-drain diode forward characteristics AM05461v1 VSD (V) Figure 15. Normalized V(BR)DSS vs temperature AM10399v1 V(BR)DSS (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 1.00 0.6 TJ=150°C 0.98 0.4 0.96 0.2 0 0.94 0 10 30 20 40 50 ISD(A) 0.92 -50 -25 Figure 16. Switching losses vs gate resistance (1) E (μJ) 600 500 AM12643v1 Eon ID=20A VDD=400V L=50µH 400 300 Eoff 200 100 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode. 8/16 DocID026215 Rev 1 0 25 50 75 100 TJ(°C) STF38N65M5, STFW38N65M5 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 19. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 20. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform Inductive Load Turn - off V(BR)DSS Id VD 90%Vds 90%Id td(v) IDM Vgs 90%Vgs on ID )) Vgs(I(t)) VDD VDD 10%Id 10%Vds Vds tr(v) AM01472v1 DocID026215 Rev 1 tf(i) tc(off) AM05540v1 9/16 16 Package mechanical data 4 STF38N65M5, STFW38N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/16 DocID026215 Rev 1 STF38N65M5, STFW38N65M5 4.1 Package mechanical data TO-220FP, STF38N65M5 Figure 23. TO-220FP drawing 7012510_Rev_K_B DocID026215 Rev 1 11/16 16 Package mechanical data STF38N65M5, STFW38N65M5 Table 9. TO-220FP mechanical data mm Dim. Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 12/16 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID026215 Rev 1 STF38N65M5, STFW38N65M5 4.2 Package mechanical data TO-3PF, STFW38N65M5 Figure 24. TO-3PF drawing 7627132_D DocID026215 Rev 1 13/16 16 Package mechanical data STF38N65M5, STFW38N65M5 Table 10. TO-3PF mechanical data mm Dim. Min. Typ. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 14/16 Max. 5.45 H 15.30 15.70 L 9.80 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 10 DocID026215 Rev 1 10.20 STF38N65M5, STFW38N65M5 5 Revision history Revision history Table 11. Document revision history Date Revision 14-Apr-2014 1 Changes First release. Part numbers previously included in datasheet DocID022851 DocID026215 Rev 1 15/16 16 STF38N65M5, STFW38N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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