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STFW3N150

STFW3N150

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO-3PF

  • 描述:

    通孔 N 通道 1500 V 2.5A(Tc) 63W(Tc) TO-3PF

  • 数据手册
  • 价格&库存
STFW3N150 数据手册
STFW3N150, STH3N150-2, STP3N150, STW3N150 N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH™ Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages Datasheet - production data Features TAB Order codes 1 VDS RDS(on) max. ID PTOT 2 3 1 3 STFW3N150 63 W 2 2 H PAK-2 1 STH3N150-2 TO-3PF 1500 V 9Ω 2.5 A STP3N150 140 W TAB STW3N150 • 100% avalanche tested 3 1 3 2 2 1 TO-220 • Intrinsic capacitances and Qg minimized • High speed switching TO-247 Figure 1. Internal schematic diagram • Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.) AM15557v1 D(2, TAB) D(TAB) Applications • Switching applications Description G(1) G(1) S(3) (TO-3PF, TO-220 and TO-247) S(2, 3) 2 (H PAK-2) These Power MOSFETs are designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. Table 1. Device summary Order codes Marking Packages Packaging TO-3PF Tube STFW3N150 2 STH3N150-2 H PAK-2 Tape and reel 3N150 STP3N150 TO-220 STW3N150 TO-247 Tube February 2014 This is information on a product in full production. DocID13102 Rev 11 1/23 www.st.com Contents STFW3N150, STH3N150-2, STP3N150, STW3N150 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2/23 .............................................. 9 DocID13102 Rev 11 STFW3N150, STH3N150-2, STP3N150, STW3N150 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol H2PAK-2, TO-220, TO-247 Parameter TO-3PF VDS Drain-source voltage VGS Gate-source voltage Unit 1500 V ± 30 V 2.5(1) 2.5 A Drain current (continuous) at TC = 100 °C (1) 1.6 1.6 A IDM (1) Drain current (pulsed) 10(1) 10 A PTOT Total dissipation at TC = 25 °C 63 140 W VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC=25 °C) ID ID Drain current (continuous) at TC = 25 °C 3500 Derating factor Tstg Tj V 0.5 Storage temperature 1.12 W/°C -50 to 150 °C 150 °C Max. operating junction temperature 1. Pulse width limited by safe operating area Table 3. Thermal data Symbol Parameter TO-3PF H2PAK-2 TO-220 Rthj-case Thermal resistance junction-case max 2 Rthj-amb Thermal resistance junction-ambient max 50 Rthj-pcb Thermal resistance junction-pcb max TO-247 0.89 62.5 35(1) Unit °C/W 50 °C/W °C/W 2 1. When mounted on 1 inch FR-4 board, 2 oz Cu Table 4. Avalanche characteristics Symbol Parameter Max value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 2.5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 450 mJ DocID13102 Rev 11 3/23 23 Electrical characteristics 2 STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS IDSS IGSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. V 10 μA 500 μA ± 100 nA 4 5 V 6 9 Ω Min. Typ. Max. Unit - 2.6 - S - pF - pF - pF VGS = ± 30 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA RDS(on Static drain-source onVGS = 10 V, ID = 1.3 A resistance Unit 1500 VDS = 1500 V Zero gate voltage drain current (VGS = 0) VDS = 1500 V, TC=125 °C Gate-body leakage current (VDS = 0) Max. 3 Table 6. Dynamic Symbol gfs (1) Parameter Test conditions Forward transconductance VDS = 30 V, ID = 1.3 A Ciss - Input capacitance 939 VDS = 25 V, f = 1 MHz, VGS = 0 Coss Output capacitance - 102 - pF Crss Reverse transfer capacitance - 13.2 - pF Coss eq. (2) Equivalent output capacitance VDS=0 to 1200 V, VGS = 0 - 100 - pF Rg Gate input resistance f = 1 MHz, gate DC Bias = 0, test signal level = 20 mV, ID = 0 - 4 - Ω Qg Total gate charge - 29.3 - nC Qgs Gate-source charge - 4.6 - nC Qgd Gate-drain charge - 17 - nC VDD = 1200 V, ID = 2.5 A, VGS = 10 V (Figure 19) 1. Pulsed: pulse duration = 300 μs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/23 DocID13102 Rev 11 STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical characteristics Table 7. Switching times Symbol td(on) tr Parameter Test conditions Turn-on delay time VDD = 750 V, ID = 1.25 A, RG = 4.7 Ω, VGS = 10 V (Figure 18) Rise time td(off) tf Turn-off-delay time Fall time Min. Typ. Max. Unit - 24 - ns - 47 - ns - 45 - ns - 61 - ns Table 8. Source drain diode Symbol ISD ISDM (1) VSD (2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 2.5 A Source-drain current (pulsed) - 10 A 1.6 V Forward on voltage ISD = 2.5 A, VGS = 0 - trr Reverse recovery time - 410 ns Qrr Reverse recovery charge - 2.4 μC IRRM Reverse recovery current ISD = 2.5 A, di/dt = 100 A/μs VDD= 60 V (Figure 20) - 11.7 A - 540 ns - 3.3 μC - 12.3 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 2.5 A, di/dt = 100 A/μs VDD= 60 V, Tj = 150 °C (Figure 20) 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DocID13102 Rev 11 5/23 23 Electrical characteristics 2.1 STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical characteristics (curves) Figure 2. Safe operating area for TO-3PF Figure 3. Thermal impedance for TO-3PF AM03934v1 ID (A) δ=0.5 0.2 10 0.1 is 0.1 0.01 0.1 ) 10µs S( on Op Lim era ite tion d by in th m is ax ar RD ea 1 TO3PF K 100µs 10 0.05 0.02 1ms 10 100 0.01 10ms Tj=150°C Tc=25°C Single pulse Sinlge pulse 1 -1 -2 1000 VDS(V) 10 -5 10 -4 10 -3 10 -2 10 -1 10 tp (s) Figure 4. Safe operating area for H2PAK-2 and TO-220 Figure 5. Thermal impedance for H2PAK-2 and TO-220 Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 6/23 DocID13102 Rev 11 STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Normalized BVDSS vs. temperature Figure 11. Static drain-source on-resistance Figure 12. Gate charge vs. gate-source voltage Figure 13. Capacitance variations DocID13102 Rev 11 7/23 23 Electrical characteristics STFW3N150, STH3N150-2, STP3N150, STW3N150 Figure 14. Normalized gate threshold voltage vs. temperature Figure 15. Normalized on resistance vs. temperature Figure 16. Source-drain diode forward characteristics Figure 17. Maximum avalanche energy vs Tj 8/23 DocID13102 Rev 11 STFW3N150, STH3N150-2, STP3N150, STW3N150 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 20. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 21. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID13102 Rev 11 10% AM01473v1 9/23 23 Package mechanical data 4 STFW3N150, STH3N150-2, STP3N150, STW3N150 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/23 DocID13102 Rev 11 STFW3N150, STH3N150-2, STP3N150, STW3N150 Package mechanical data Figure 24. TO-3PF drawing 7627132_D DocID13102 Rev 11 11/23 23 Package mechanical data STFW3N150, STH3N150-2, STP3N150, STW3N150 Table 9. TO-3PF mechanical data mm Dim. Min. Typ. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 12/23 Max. 5.45 H 15.30 15.70 L 9.80 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 10 DocID13102 Rev 11 10.20 STFW3N150, STH3N150-2, STP3N150, STW3N150 Package mechanical data Figure 25. H²PAK-2 drawing 8159712_C DocID13102 Rev 11 13/23 23 Package mechanical data STFW3N150, STH3N150-2, STP3N150, STW3N150 Table 10. H²PAK-2 mechanical data mm Dim. Min. Typ. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 4.98 5.18 E 0.50 0.90 F 0.78 0.85 H 10.00 10.40 H1 7.40 7.80 - 14/23 L 15.30 15.80 L1 1.27 1.40 L2 4.93 5.23 L3 6.85 7.25 L4 1.5 1.7 M 2.6 2.9 R 0.20 0.60 V 0° 8° DocID13102 Rev 11 STFW3N150, STH3N150-2, STP3N150, STW3N150 Package mechanical data Figure 26. H²PAK-2 recommended footprint (dimensions are in mm) 8159712_C DocID13102 Rev 11 15/23 23 Package mechanical data STFW3N150, STH3N150-2, STP3N150, STW3N150 Figure 27. TO-220 type A drawing BW\SH$B5HYB7 16/23 DocID13102 Rev 11 STFW3N150, STH3N150-2, STP3N150, STW3N150 Package mechanical data Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID13102 Rev 11 17/23 23 Package mechanical data STFW3N150, STH3N150-2, STP3N150, STW3N150 Figure 28. TO-247 drawing 0075325_G 18/23 DocID13102 Rev 11 STFW3N150, STH3N150-2, STP3N150, STW3N150 Package mechanical data Table 12. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID13102 Rev 11 5.70 19/23 23 Packaging mechanical data 5 STFW3N150, STH3N150-2, STP3N150, STW3N150 Packaging mechanical data Figure 29. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 20/23 DocID13102 Rev 11 STFW3N150, STH3N150-2, STP3N150, STW3N150 Packaging mechanical data Figure 30. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius G measured at hub Tape slot in core for tape start 25 mm min. width AM08851v2 Table 13. H²PAK-2 tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID13102 Rev 11 Min. Max. 330 13.2 26.4 30.4 21/23 23 Revision history 6 STFW3N150, STH3N150-2, STP3N150, STW3N150 Revision history Table 14. Document revision history Date Revision 12-Jan-2007 1 First release 17-Apr-2007 2 Added new value on Table 6. 14-May-2007 3 The document has been reformatted 29-Aug-2007 4 RDS(on) value changed, updated Figure 15 09-Apr-2008 5 Added new package: TO-3PF 13-Feb-2009 6 Added PTOT value for TO-3PF (Table 2: Absolute maximum ratings) 01-Dec-2009 7 – Document status promoted from preliminary data to datasheet – Removed TO-220FH package and mechanical data 10-Dec-2009 8 Corrected VISO value in Table 2: Absolute maximum ratings 29-Jun-2010 9 Corrected unit in Table 3. 10 – – – – Minor text changes Modified: Table 3 Changed: Figure 1 Added: H2PAK-2 package 11 – – – – – Modified: Figure 1 Updated: Figure 18, 19, 20 and 21 Updated: Figure 27 and Table 11 Updated: Section 4: Package mechanical data Minor text changes 08-Feb-2013 18-Feb-2014 22/23 Changes DocID13102 Rev 11 STFW3N150, STH3N150-2, STP3N150, STW3N150 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2014 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com DocID13102 Rev 11 23/23 23
STFW3N150 价格&库存

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STFW3N150
    •  国内价格
    • 1+47.18156
    • 4+42.68404
    • 10+33.68899
    • 60+30.88865

    库存:215

    STFW3N150
    •  国内价格
    • 1+14.07231
    • 10+12.90931
    • 30+12.67671
    • 100+11.97891

    库存:0