STFW3N150, STH3N150-2,
STP3N150, STW3N150
N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH™ Power MOSFETs
in TO-3PF, H2PAK-2, TO-220 and TO247 packages
Datasheet - production data
Features
TAB
Order codes
1
VDS
RDS(on) max.
ID
PTOT
2
3
1
3
STFW3N150
63 W
2
2
H PAK-2
1
STH3N150-2
TO-3PF
1500 V
9Ω
2.5 A
STP3N150
140 W
TAB
STW3N150
• 100% avalanche tested
3
1
3
2
2
1
TO-220
• Intrinsic capacitances and Qg minimized
• High speed switching
TO-247
Figure 1. Internal schematic diagram
• Fully isolated TO-3PF plastic package,
creepage distance path is 5.4 mm (typ.)
AM15557v1
D(2, TAB)
D(TAB)
Applications
• Switching applications
Description
G(1)
G(1)
S(3)
(TO-3PF, TO-220 and TO-247)
S(2, 3)
2
(H PAK-2)
These Power MOSFETs are designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. The result is a product that
matches or improves on the performance of
comparable standard parts from other
manufacturers.
Table 1. Device summary
Order codes
Marking
Packages
Packaging
TO-3PF
Tube
STFW3N150
2
STH3N150-2
H PAK-2
Tape and reel
3N150
STP3N150
TO-220
STW3N150
TO-247
Tube
February 2014
This is information on a product in full production.
DocID13102 Rev 11
1/23
www.st.com
Contents
STFW3N150, STH3N150-2, STP3N150, STW3N150
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2/23
.............................................. 9
DocID13102 Rev 11
STFW3N150, STH3N150-2, STP3N150, STW3N150
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
H2PAK-2,
TO-220,
TO-247
Parameter
TO-3PF
VDS
Drain-source voltage
VGS
Gate-source voltage
Unit
1500
V
± 30
V
2.5(1)
2.5
A
Drain current (continuous) at TC = 100 °C
(1)
1.6
1.6
A
IDM (1)
Drain current (pulsed)
10(1)
10
A
PTOT
Total dissipation at TC = 25 °C
63
140
W
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s; TC=25 °C)
ID
ID
Drain current (continuous) at TC = 25 °C
3500
Derating factor
Tstg
Tj
V
0.5
Storage temperature
1.12
W/°C
-50 to 150
°C
150
°C
Max. operating junction temperature
1. Pulse width limited by safe operating area
Table 3. Thermal data
Symbol
Parameter
TO-3PF H2PAK-2 TO-220
Rthj-case
Thermal resistance junction-case max
2
Rthj-amb
Thermal resistance junction-ambient
max
50
Rthj-pcb
Thermal resistance junction-pcb max
TO-247
0.89
62.5
35(1)
Unit
°C/W
50
°C/W
°C/W
2
1. When mounted on 1 inch FR-4 board, 2 oz Cu
Table 4. Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAR
Avalanche current, repetitive or
not-repetitive
(pulse width limited by Tj max)
2.5
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR,
VDD = 50 V)
450
mJ
DocID13102 Rev 11
3/23
23
Electrical characteristics
2
STFW3N150, STH3N150-2, STP3N150, STW3N150
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
Min.
Typ.
V
10
μA
500
μA
± 100
nA
4
5
V
6
9
Ω
Min.
Typ.
Max.
Unit
-
2.6
-
S
-
pF
-
pF
-
pF
VGS = ± 30 V
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 μA
RDS(on
Static drain-source onVGS = 10 V, ID = 1.3 A
resistance
Unit
1500
VDS = 1500 V
Zero gate voltage
drain current (VGS = 0) VDS = 1500 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
Max.
3
Table 6. Dynamic
Symbol
gfs (1)
Parameter
Test conditions
Forward
transconductance
VDS = 30 V, ID = 1.3 A
Ciss
-
Input capacitance
939
VDS = 25 V, f = 1 MHz, VGS = 0
Coss
Output capacitance
-
102
-
pF
Crss
Reverse transfer
capacitance
-
13.2
-
pF
Coss eq. (2)
Equivalent output
capacitance
VDS=0 to 1200 V, VGS = 0
-
100
-
pF
Rg
Gate input resistance
f = 1 MHz, gate DC
Bias = 0,
test signal level = 20 mV,
ID = 0
-
4
-
Ω
Qg
Total gate charge
-
29.3
-
nC
Qgs
Gate-source charge
-
4.6
-
nC
Qgd
Gate-drain charge
-
17
-
nC
VDD = 1200 V, ID = 2.5 A,
VGS = 10 V
(Figure 19)
1. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/23
DocID13102 Rev 11
STFW3N150, STH3N150-2, STP3N150, STW3N150
Electrical characteristics
Table 7. Switching times
Symbol
td(on)
tr
Parameter
Test conditions
Turn-on delay time
VDD = 750 V, ID = 1.25 A,
RG = 4.7 Ω, VGS = 10 V
(Figure 18)
Rise time
td(off)
tf
Turn-off-delay time
Fall time
Min.
Typ.
Max. Unit
-
24
-
ns
-
47
-
ns
-
45
-
ns
-
61
-
ns
Table 8. Source drain diode
Symbol
ISD
ISDM (1)
VSD
(2)
Parameter
Test conditions
Min. Typ. Max. Unit
Source-drain current
-
2.5
A
Source-drain current (pulsed)
-
10
A
1.6
V
Forward on voltage
ISD = 2.5 A, VGS = 0
-
trr
Reverse recovery time
-
410
ns
Qrr
Reverse recovery charge
-
2.4
μC
IRRM
Reverse recovery current
ISD = 2.5 A, di/dt = 100 A/μs
VDD= 60 V
(Figure 20)
-
11.7
A
-
540
ns
-
3.3
μC
-
12.3
A
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 2.5 A, di/dt = 100 A/μs
VDD= 60 V, Tj = 150 °C
(Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
DocID13102 Rev 11
5/23
23
Electrical characteristics
2.1
STFW3N150, STH3N150-2, STP3N150, STW3N150
Electrical characteristics (curves)
Figure 2. Safe operating area for TO-3PF
Figure 3. Thermal impedance for TO-3PF
AM03934v1
ID
(A)
δ=0.5
0.2
10
0.1
is
0.1
0.01
0.1
)
10µs
S(
on
Op
Lim era
ite tion
d
by in th
m is
ax ar
RD ea
1
TO3PF
K
100µs
10
0.05
0.02
1ms
10
100
0.01
10ms
Tj=150°C
Tc=25°C
Single pulse
Sinlge
pulse
1
-1
-2
1000
VDS(V)
10 -5
10
-4
10
-3
10
-2
10
-1
10
tp (s)
Figure 4. Safe operating area for H2PAK-2 and
TO-220
Figure 5. Thermal impedance for H2PAK-2 and
TO-220
Figure 6. Safe operating area for TO-247
Figure 7. Thermal impedance for TO-247
6/23
DocID13102 Rev 11
STFW3N150, STH3N150-2, STP3N150, STW3N150
Electrical characteristics
Figure 8. Output characteristics
Figure 9. Transfer characteristics
Figure 10. Normalized BVDSS vs. temperature
Figure 11. Static drain-source on-resistance
Figure 12. Gate charge vs. gate-source voltage
Figure 13. Capacitance variations
DocID13102 Rev 11
7/23
23
Electrical characteristics
STFW3N150, STH3N150-2, STP3N150, STW3N150
Figure 14. Normalized gate threshold voltage
vs. temperature
Figure 15. Normalized on resistance vs.
temperature
Figure 16. Source-drain diode forward
characteristics
Figure 17. Maximum avalanche energy vs Tj
8/23
DocID13102 Rev 11
STFW3N150, STH3N150-2, STP3N150, STW3N150
3
Test circuits
Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 20. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 21. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
DocID13102 Rev 11
10%
AM01473v1
9/23
23
Package mechanical data
4
STFW3N150, STH3N150-2, STP3N150, STW3N150
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/23
DocID13102 Rev 11
STFW3N150, STH3N150-2, STP3N150, STW3N150
Package mechanical data
Figure 24. TO-3PF drawing
7627132_D
DocID13102 Rev 11
11/23
23
Package mechanical data
STFW3N150, STH3N150-2, STP3N150, STW3N150
Table 9. TO-3PF mechanical data
mm
Dim.
Min.
Typ.
A
5.30
5.70
C
2.80
3.20
D
3.10
3.50
D1
1.80
2.20
E
0.80
1.10
F
0.65
0.95
F2
1.80
2.20
G
10.30
11.50
G1
12/23
Max.
5.45
H
15.30
15.70
L
9.80
L2
22.80
23.20
L3
26.30
26.70
L4
43.20
44.40
L5
4.30
4.70
L6
24.30
24.70
L7
14.60
15
N
1.80
2.20
R
3.80
4.20
Dia
3.40
3.80
10
DocID13102 Rev 11
10.20
STFW3N150, STH3N150-2, STP3N150, STW3N150
Package mechanical data
Figure 25. H²PAK-2 drawing
8159712_C
DocID13102 Rev 11
13/23
23
Package mechanical data
STFW3N150, STH3N150-2, STP3N150, STW3N150
Table 10. H²PAK-2 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.30
4.80
A1
0.03
0.20
C
1.17
1.37
e
4.98
5.18
E
0.50
0.90
F
0.78
0.85
H
10.00
10.40
H1
7.40
7.80
-
14/23
L
15.30
15.80
L1
1.27
1.40
L2
4.93
5.23
L3
6.85
7.25
L4
1.5
1.7
M
2.6
2.9
R
0.20
0.60
V
0°
8°
DocID13102 Rev 11
STFW3N150, STH3N150-2, STP3N150, STW3N150
Package mechanical data
Figure 26. H²PAK-2 recommended footprint (dimensions are in mm)
8159712_C
DocID13102 Rev 11
15/23
23
Package mechanical data
STFW3N150, STH3N150-2, STP3N150, STW3N150
Figure 27. TO-220 type A drawing
BW\SH$B5HYB7
16/23
DocID13102 Rev 11
STFW3N150, STH3N150-2, STP3N150, STW3N150
Package mechanical data
Table 11. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
DocID13102 Rev 11
17/23
23
Package mechanical data
STFW3N150, STH3N150-2, STP3N150, STW3N150
Figure 28. TO-247 drawing
0075325_G
18/23
DocID13102 Rev 11
STFW3N150, STH3N150-2, STP3N150, STW3N150
Package mechanical data
Table 12. TO-247 mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
DocID13102 Rev 11
5.70
19/23
23
Packaging mechanical data
5
STFW3N150, STH3N150-2, STP3N150, STW3N150
Packaging mechanical data
Figure 29. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
K0
W
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
20/23
DocID13102 Rev 11
STFW3N150, STH3N150-2, STP3N150, STW3N150
Packaging mechanical data
Figure 30. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
Full radius
G measured at hub
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Table 13. H²PAK-2 tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID13102 Rev 11
Min.
Max.
330
13.2
26.4
30.4
21/23
23
Revision history
6
STFW3N150, STH3N150-2, STP3N150, STW3N150
Revision history
Table 14. Document revision history
Date
Revision
12-Jan-2007
1
First release
17-Apr-2007
2
Added new value on Table 6.
14-May-2007
3
The document has been reformatted
29-Aug-2007
4
RDS(on) value changed, updated Figure 15
09-Apr-2008
5
Added new package: TO-3PF
13-Feb-2009
6
Added PTOT value for TO-3PF (Table 2: Absolute maximum ratings)
01-Dec-2009
7
– Document status promoted from preliminary data to datasheet
– Removed TO-220FH package and mechanical data
10-Dec-2009
8
Corrected VISO value in Table 2: Absolute maximum ratings
29-Jun-2010
9
Corrected unit in Table 3.
10
–
–
–
–
Minor text changes
Modified: Table 3
Changed: Figure 1
Added: H2PAK-2 package
11
–
–
–
–
–
Modified: Figure 1
Updated: Figure 18, 19, 20 and 21
Updated: Figure 27 and Table 11
Updated: Section 4: Package mechanical data
Minor text changes
08-Feb-2013
18-Feb-2014
22/23
Changes
DocID13102 Rev 11
STFW3N150, STH3N150-2, STP3N150, STW3N150
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE
SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B)
AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS
OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT
PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS
EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY
DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE
DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2014 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
DocID13102 Rev 11
23/23
23