STFW3N170

STFW3N170 N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™ Power MOSFET in a TO-3PF package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STFW3N170 1700 V 13 Ω 2.6 A 63 W     3 2 1 Intrinsic capacitances and Qg minimized TO-3PF for higher creepage between leads High speed switching 100% avalanche tested Applications TO-3PF  Switching applications Figure 1: Internal schematic diagram Description This Power MOSFET is designed using the STMicroelectronics consolidated strip-layoutbased MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. Table 1: Device summary Order code Marking Package Packing STFW3N170 3N170 TO-3PF Tube September 2015 DocID023985 Rev 3 This is information on a product in full production. 1/12 www.st.com Contents STFW3N170 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 5 2/12 TO-3PF package information ............................................................ 9 Revision history ............................................................................ 11 DocID023985 Rev 3 STFW3N170 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 1700 V VGS Gate-source voltage ±30 V Drain current (continuous) at Tcase = 25 °C 2.6 Drain current (continuous) at Tcase = 100 °C 1.6 Drain current (pulsed) 10.4 A Total dissipation at Tcase = 25 °C 63 W Avalanche current, repetitive or not repetitive 0.8 A 2 mJ 3.5 kV -55 to 150 °C Value Unit ID(1) IDM PTOT IAR EAS(2) Single pulse avalanche energy VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj Operating junction temperature A Notes: (1) Limited by maximum junction temperature. (2) starting Tj = 25 °C, ID = IAR, VDD = 50 V. Table 3: Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case 2 Rthj-amb Thermal resistance junction-ambient 50 DocID023985 Rev 3 °C/W 3/12 Electrical characteristics 2 STFW3N170 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4: Static Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. 1700 Unit V VGS = 0 V, VDS = 1700 V 10 VGS = 0 V, VDS = 1700 V, Tcase = 125 °C 500 Gate-body leakage current VDS = 0 V, VGS = ±30 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 5 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 1.3 A 7 13 Ω Min. Typ. Max. Unit - 1100 - - 50 - - 7 - IDSS Zero gate voltage drain current IGSS 3 µA Table 5: Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 3.6 - Qg Total gate charge - 44 - Qgs Gate-source charge - 7 - Qgd Gate-drain charge VDD = 1360 V, ID = 2.6 A, VGS = 10 V (see Figure 15: "Gate charge test circuit") - 25 - Test conditions Min. Typ. Max. VDD = 850 V, ID = 1.3 A RG = 4.7 Ω, VGS = 10 V (see Figure 14: "Switching times test circuit for resistive load" and Figure 19: "Switching time waveform") - 25 - - 9 - - 51 - - 53 - VDS = 100 V, f = 1 MHz, VGS = 0 V pF Ω nC Table 6: Switching times Symbol td(on) tr td(off) tf 4/12 Parameter Turn-on delay time Rise time Turn-off delay time Fall time DocID023985 Rev 3 Unit ns STFW3N170 Electrical characteristics Table 7: Source-drain diode Symbol ISD Parameter Test conditions Source-drain current Min. Typ. Max. - 2.6 - 10.4 1.5 Unit ISDM Source-drain current (pulsed) Tj = 25 °C VSD(1) Forward on voltage VGS = 0 V, ISD = 2.6 A - trr Reverse recovery time - 1.58 µs Qrr Reverse recovery charge - 6 µC IRRM Reverse recovery current ISD = 2.6 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 7.9 A ISD = 2.6 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 2.12 µs - 8.8 µC - 8.3 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current A V Notes: (1) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DocID023985 Rev 3 5/12 Electrical characteristics 2.1 6/12 STFW3N170 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance DocID023985 Rev 3 STFW3N170 Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Output capacitance stored energy Figure 13: Source- drain diode forward characteristics DocID023985 Rev 3 7/12 Test circuits 3 STFW3N170 Test circuits Figure 14: Switching times test circuit for resistive load Figure 15: Gate charge test circuit Figure 16: Test circuit for inductive load switching and diode recovery times Figure 17: Unclamped inductive load test circuit Figure 18: Unclamped inductive waveform Figure 19: Switching time waveform 8/12 DocID023985 Rev 3 STFW3N170 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 TO-3PF package information Figure 20: TO-3PF package outline 7627132_D DocID023985 Rev 3 9/12 Package information STFW3N170 Table 8: TO-3PF mechanical data mm Dim. Min. Max. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 10/12 Typ. 5.45 H 15.30 L 9.80 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 DocID023985 Rev 3 15.70 10 10.20 STFW3N170 5 Revision history Revision history Table 9: Document revision history Date Revisi on 17-Jan-2013 1 First release. 2 Text and formatting changes throughout document. Part number STW3N170 has been moved to a separate document. In section Electrical ratings: - updated Table Absolute maximum ratings In section Electrical characteristics: - renamed Table Static (was On/off states) - updated Table Dynamic - updated Table Switching times - updated Table Source-drain diode Added section Electrical characteristics (curves) In section Package information: - updated section name (was Package mechanical data) - updated TO-3PF package information 3 In section Electrical ratings: - updated table Absolute maximum ratings In section Electrical characteristics: - updated table Dynamic In section Electrical characteristics (curves): - updated figures Thermal impedance and Output capacitance stored energy 22-Jun-2015 16-Sep-2015 Changes DocID023985 Rev 3 11/12 STFW3N170 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 12/12 DocID023985 Rev 3