STFW69N65M5
STW69N65M5
N-channel 650 V, 0.037 Ω typ., 58 A MDmesh™ V Power MOSFET
in TO-3PF and TO-247 packages
Datasheet − production data
Features
Order codes
VDSS @ TJmax RDS(on) max
STFW69N65M5
STW69N65M5
710 V
< 0.045 Ω
ID
58 A
1
■
Worldwide best RDS(on) * area
■
Higher VDSS rating and high dv/dt capability
3
■
Excellent switching performance
■
100% avalanche tested
2
2
1
3
1
TO-247
TO-3PF
Applications
■
Switching applications
Figure 1.
Internal schematic diagram
Description
$
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
'
3
!-V
Table 1.
Device summary
Order codes
Marking
STFW69N65M5
Package
TO-3PF
69N65M5
STW69N65M5
September 2012
This is information on a product in full production.
Packaging
Tube
TO-247
Doc ID 022906 Rev 2
1/16
www.st.com
16
Contents
STFW69N65M5, STW69N65M5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
.............................................. 9
Doc ID 022906 Rev 2
STFW69N65M5, STW69N65M5
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-3PF
VGS
Gate-source voltage
± 25
ID
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM
(2)
PTOT
dv/dt
(3)
Drain current (pulsed)
Total dissipation at TC = 25 °C
58
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s; Tc=25°C)
Tstg
Storage temperature
V
(1)
58
A
36.5 (1)
36.5
A
(1)
232
A
330
W
232
79
Peak diode recovery voltage slope
VISO
Tj
TO-247
15
V/ns
3500
V
- 55 to 150
°C
150
°C
Max. operating junction temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area
3. ISD ≤ 58 A, di/dt ≤400 A/µs; VDS peak < V(BR)DSS, VDD=400 V
Table 3.
Thermal data
Value
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Table 4.
Symbol
Unit
TO-3PF
TO-247
1.58
0.38
°C/W
50
°C/W
Value
Unit
Avalanche characteristics
Parameter
IAR
Avalanche current, repetetive or not repetetive
(pulse width limited by Tjmax )
12
A
EAS
Single pulse avalanche energy (starting tj=25°C,
Id= IAR; Vdd=50)
1410
mJ
Doc ID 022906 Rev 2
3/16
Electrical characteristics
2
STFW69N65M5, STW69N65M5
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
Zero gate voltage
VDS = 650 V
drain current (VGS = 0) VDS = 650 V, TC=125 °C
IGSS
Gate-body leakage
current (VDS = 0)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on-resistance
Symbol
Ciss
Coss
Crss
Co(tr)(1)
Co(er)
(2)
Typ.
Max.
Unit
650
V
1
100
µA
µA
± 100
nA
4
5
V
0.037
0.045
Ω
Min.
Typ.
Max.
Unit
-
6420
170
11
-
pF
pF
pF
-
536
-
pF
-
146
-
pF
-
1.2
-
Ω
-
143
38
64
-
nC
nC
nC
VGS = ± 25 V
VGS(th)
Table 6.
Min.
3
VGS = 10 V, ID = 29 A
Dynamic
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
Equivalent
capacitance time
related
VDS = 0 to 520 V, VGS = 0
Equivalent
capacitance energy
related
RG
Intrinsic gate
resistance
f = 1 MHz open drain
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 29 A,
VGS = 10 V
(see Figure 18)
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
4/16
Doc ID 022906 Rev 2
STFW69N65M5, STW69N65M5
Table 7.
Symbol
td(v)
tr(v)
tf(i)
tc(off)
Table 8.
Electrical characteristics
Switching times
Parameter
Test conditions
Voltage delay time
Voltage rise time
Current fall time
Crossing time
VDD = 400 V, ID = 38 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19 and
Figure 22)
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
IRRM
trr
Qrr
IRRM
Typ.
-
102
13.5
10
19
Min.
Typ.
Max
Unit
-
ns
ns
ns
ns
Source drain diode
Symbol
trr
Qrr
Min.
Test conditions
Max. Unit
-
58
232
A
A
ISD = 58 A, VGS = 0
-
1.5
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 58 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 19)
-
480
11
46
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 58 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 19)
-
592
16
53
ns
µC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 022906 Rev 2
5/16
Electrical characteristics
STFW69N65M5, STW69N65M5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-3PF
Figure 3.
Thermal impedance for TO-3PF
!-V
)$
!
TO3PF
K
δ=0.5
0.2
IS
EA N
AR
S $3O
I
TH 2
IN AX
N
IO YM
T
RA DB
PE
/ MITE
,I
S
10
0.05
MS
0.02
0.01
Single pulse
3INLGE
PULSE
Figure 4.
-1
MS
4J #
4C #
0.1
S
-2
6$36
Safe operating area for TO-247
10 -5
10
-4
-2
-3
10
10
10
-1
10
tp (s)
Figure 5.
Thermal impedance for TO-247
Figure 7.
Transfer characteristics
!-V
)$
!
S
ON
S
$
3
/
,I PER
M AT
ITE IO
D NI
BY N
M THI
AX SA
2 RE
A
IS
MS
MS
4J #
4C #
3INLGE
PULSE
Figure 6.
6$36
Output characteristics
!-V
)$
!
6'36
6
6/16
6
6$36
6
!-V
)$
!
6$36
Doc ID 022906 Rev 2
6'36
STFW69N65M5, STW69N65M5
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
!-V
6'3
6
6'3
6$$6
6$3
)$!
!-V
2$3ON
/HM
6'36
Static drain-source on-resistance
1GN#
Figure 10. Capacitance variations
)$!
Figure 11. Output capacitance stored energy
!-V
#
P&
!-V
%OSS
*
#ISS
#OSS
#RSS
Figure 12. Normalized gate threshold voltage
vs temperature
AM05459v2
VGS(th)
(norm)
1.10
6$36
ID=250 µA
VDS=VGS
6$36
Figure 13. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.1
AM05460v2
VGS=10V
ID=29A
1.9
1.00
1.7
1.5
1.3
0.90
1.1
0.9
0.80
0.7
0.70
-50 -25
0
25
50
75 100
TJ(°C)
0.5
-50 -25
Doc ID 022906 Rev 2
0
25
50
75 100
TJ(°C)
7/16
Electrical characteristics
STFW69N65M5, STW69N65M5
Figure 14. Source-drain diode forward
characteristics
Figure 15. Normalized BVDSS vs temperature
AM05461v1
VSD
(V)
AM10399v1
VDS
(norm)
TJ=-50°C
1.08
1.2
ID = 1mA
1.06
1.0
1.04
0.8
1.02
TJ=25°C
1.00
0.6
TJ=150°C
0.98
0.4
0.96
0.2
0
0.94
0
10
20
30
40
50 ISD(A)
0.92
-50 -25
Figure 16. Switching losses vs gate
resistance(1)
!-V
%
*
)$!
6$$6
6'36
%ON
%OFF
2'
1. Eon including reverse recovery of a SiC diode
8/16
Doc ID 022906 Rev 2
0
25
50
75 100
TJ(°C)
STFW69N65M5, STW69N65M5
3
Test circuits
Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
6$$
6
K
K
N&
&
2,
&
6'3
)'#/.34
6$$
6I66'-!8
6$
2'
&
$54
$54
6'
K
07
K
K
07
!-V
!-V
Figure 19. Test circuit for inductive load
Figure 20. Unclamped inductive load test
switching and diode recovery times
circuit
!
!
$54
&!34
$)/$%
"
"
,
!
$
'
3
6$
, (
&
"
&
$
6$$
&
&
6$$
)$
'
2'
3
6I
$54
0W
!-V
Figure 21. Unclamped inductive waveform
!-V
Figure 22. Switching time waveform
Inductive Load Turn - off
6"2 $33
Id
6$
90%Vds
90%Id
td(v)
)$Vgs
90%Vgs
on
)$
))
Vgs(I(t))
6$$
6$$
10%Id
10%Vds
Vds
tr(v)
!-V
Doc ID 022906 Rev 2
tf(i)
tc(off)
AM05540v1
9/16
Package mechanical data
4
STFW69N65M5, STW69N65M5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/16
Doc ID 022906 Rev 2
STFW69N65M5, STW69N65M5
Table 9.
Package mechanical data
TO-3PF mechanical data
mm
Dim.
Min.
Typ.
Max.
A
5.30
5.70
C
2.80
3.20
D
3.10
3.50
D1
1.80
2.20
E
0.80
1.10
F
0.65
0.95
F2
1.80
2.20
G
10.30
11.50
G1
5.45
H
15.30
L
9.80
L2
22.80
23.20
L3
26.30
26.70
L4
43.20
44.40
L5
4.30
4.70
L6
24.30
24.70
L7
14.60
15
N
1.80
2.20
R
3.80
4.20
Dia
3.40
3.80
Doc ID 022906 Rev 2
15.70
10
10.20
11/16
Package mechanical data
STFW69N65M5, STW69N65M5
Figure 23. TO-3PF drawing
L3
L
D
E
A
C
D1
Dia
L2
L6
L7
F2(3x)
F(3x)
G1
H
G
R
L5
N
L4
7627132_C
12/16
Doc ID 022906 Rev 2
STFW69N65M5, STW69N65M5
Table 10.
Package mechanical data
TO-247 mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
L2
5.45
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
Doc ID 022906 Rev 2
5.50
5.70
13/16
Package mechanical data
STFW69N65M5, STW69N65M5
Figure 24. TO-247 drawing
0075325_G
14/16
Doc ID 022906 Rev 2
STFW69N65M5, STW69N65M5
5
Revision history
Revision history
Table 11.
Document revision history
Date
Revision
27-Feb-2012
1
First release.
2
– Modified: note 3 of Table 2, values in Table 4, typ. values in
Table 6, 7 and 8
– Curves inserted
– Minor text changes
28-Sep-2012
Changes
Doc ID 022906 Rev 2
15/16
STFW69N65M5, STW69N65M5
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