STFW6N120K3

STFW6N120K3, STP6N120K3, STW6N120K3 N-channel 1200 V, 1.95 Ω typ., 6 A SuperMESH3™ Power MOSFET in TO-3PF, TO-220 and TO-247 packages Datasheet — production data Features Order codes VDSS RDS(on) max ID Ptot STFW6N120K3 1200 V < 2.4 Ω 6A 63 W STP6N120K3 1200 V < 2.4 Ω 6A 150 W STW6N120K3 1200 V < 2.4 Ω 6A 150 W 3 ■ 100% avalanche tested ■ Extremely large avalanche performance ■ Very low intrinsic capacitances ■ Zener-protected TAB 2 3 1 Figure 1. 3 1 2 TO-247 TO-220 Applications 2 TO-3PF Gate charge minimized ■ ■ 1 Internal schematic diagram Switching applications D(2,TAB) Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. G(1) S(3) AM01476v1 Table 1. Device summary Order codes Marking Package STFW6N120K3 STP6N120K3 TO-3PF 6N120K3 STW6N120K3 November 2012 This is information on a product in full production. Packaging TO-220 Tube TO-247 Doc ID 15572 Rev 3 1/17 www.st.com 17 Contents STFW6N120K3, STP6N120K3, STW6N120K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 .............................................. 9 Doc ID 15572 Rev 3 STFW6N120K3, STP6N120K3, STW6N120K3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-3PF VGS Gate- source voltage TO-220 TO-247 ± 30 V ID Drain current (continuous) at TC = 25 °C 6 A ID Drain current (continuous) at TC = 100 °C 3.8 A Drain current (pulsed) 20 A IDM (1) PTOT Power dissipation at TC = 25 °C IAR Max current during repetitive or single pulse avalanche (pulse width limited by TJMAX) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) ESD Gate-source human body model (C = 100 pF, R = 1.5 kΩ) VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) Tstg Storage temperature TJ 63 150 150 W 7 A 180 mJ 6 kV 3500 V -55 to 150 °C Operating junction temperature 1. Pulse width limited by safe operating area Table 3. Thermal data Value Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient max TJ Maximum lead temperature for soldering purpose Doc ID 15572 Rev 3 Unit TO-3PF TO-220 TO-247 1.98 0.83 50 62.5 300 °C/W 50 °C/W °C 3/17 Electrical characteristics 2 STFW6N120K3, STP6N120K3, STW6N120K3 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On / off states Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 1200 - - V IDSS VDS = 1200 V Zero gate voltage drain current (VGS = 0) VDS = 1200 V, TJ = 125 °C - - 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) - - ± 10 µA VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V RDS(on) Static drain-source onVGS = 10 V, ID = 2.5 A resistance - 1.95 2.4 Ω Min. Typ. Max. Unit Table 5. Symbol Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 1050 90 1 - pF pF pF Co(tr) (1) Equivalent capacitance time related VGS = 0, VDS = 0 to 960 V - 40 - pF Co(er) (2) Equivalent capacitance energy related VGS = 0, VDS = 0 to 960 V - 25 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 3 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 960 V, ID = 7.2 A, VGS = 10 V (see Figure 20) - 39 7.7 23.5 - nC nC nC Ciss Coss Crss 1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS. 4/17 Doc ID 15572 Rev 3 STFW6N120K3, STP6N120K3, STW6N120K3 Table 6. Symbol td(on) tr td(off) tf Table 7. Electrical characteristics Switching times on/off Parameter Test conditions Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 600 V, ID = 3.6 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) Min. Typ. Max. Unit - 30 12 58 32 Min. Typ. - - 6 20 A A - ns ns ns ns Source drain diode Symbol Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 5 A, VGS = 0 - -- 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 7.2 A, di/dt = 100 A/µs VDD = 60 V TJ = 25 °C (see Figure 24) - 580 7 25 - ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 7.2 A, di/dt = 100 A/µs VDD = 60 V, TJ = 150 °C (see Figure 24) - 840 9 22 - ns µC A Min. Typ. trr Qrr IRRM trr Qrr IRRM Test conditions Max. Unit 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 8. Symbol V(BR)GSO Gate-source Zener diode Parameter Test conditions Gate-source breakdown voltage IGS = ± 1 mA (ID=0) 30 Max. Unit - V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 15572 Rev 3 5/17 Electrical characteristics STFW6N120K3, STP6N120K3, STW6N120K3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-3PF Figure 3. !-V )$ ! TO3PF K δ=0.5 0.2 O N $3 PE RA ITE TION D IN BY M THIS AX A 2 RE A IS  ,I / —S —S MS M  Thermal impedance for TO-3PF 0.1 -1 10 0.05 0.02 MS 4J # 4C #    Figure 4.  -3 10 -2 10 -1 10 tp (s) Figure 5. Thermal impedance for TO-220 Figure 7. Thermal impedance for TO-247 is n) S( o pe ra ite tion d by in t m his ax a RD rea 10µs 100µs 1ms O m Li Tj=150°C Tc=25°C Sinlge pulse 0.01 0.1 10 1 100 1000 VDS(V) Safe operating area for TO-247 AM07309v1 ID (A) ) on 10µs 100µs 1ms S( O pe m rat ite ion d by in t m his ax a RD rea is 10 Li 10ms Tj=150°C Tc=25°C 0.1 6/17 -4 10 10ms 0.1 0.01 0.1 10 -5 10 AM07308v1 10 1 -2  6$36 Safe operating area for TO-220 ID (A) Figure 6. Single pulse 3INLGE PULSE   1 0.01 Sinlge pulse 1 10 100 1000 VDS(V) Doc ID 15572 Rev 3 STFW6N120K3, STP6N120K3, STW6N120K3 Figure 8. Output characteristics )$ ! Electrical characteristics Figure 9. !-V 6'36 Transfer characteristics !-V )$ !   6$36 6   6       6   6$36          Figure 10. Normalized BVDSS vs temperature AM07911v1 BVDSS (norm) 1.10     6'36 Figure 11. Static drain-source on-resistance AM07909v1 RDS(on) (Ω) 2.6 VGS=10V 1.05 2.2 1.00 1.8 0.95 1.4 0.90 0.85 -50 0 50 100 1 0.5 TJ(°C) Figure 12. Output capacitance stored energy !-V %OSS —* 1.5 2.5 3.5 4.5 ID(A) Figure 13. Capacitance variations AM07912v1 C (pF)  Ciss  1000   100  Coss   10  Crss         6$36 Doc ID 15572 Rev 3 1 0.1 1 10 100 VDS(V) 7/17 Electrical characteristics STFW6N120K3, STP6N120K3, STW6N120K3 Figure 14. Gate charge vs gate-source voltage Figure 15. Normalized on-resistance vs temperature !-V 6'3 6 6$3 6 6$3     AM079071v1 RDS(on) (Ω) 2.5 VGS=10V 2 1.5   1        0.5  1GN# Figure 16. Normalized gate threshold voltage vs temperature !-V 6'3TH NORM  0 -75 25 -25 75 125 TJ(°C) Figure 17. Maximum avalanche energy vs temperature !-V %!3 M*                   4* # Figure 18. Source-drain diode forward characteristics 63$ 6 !-V 4*  #   4*  #   4* #    8/17     )3$! Doc ID 15572 Rev 3          4* # STFW6N120K3, STP6N120K3, STW6N120K3 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 23. Unclamped inductive waveform AM01471v1 Figure 24. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 15572 Rev 3 10% AM01473v1 9/17 Package mechanical data 4 STFW6N120K3, STP6N120K3, STW6N120K3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. TO-3PF mechanical data mm Dim. Min. Typ. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 10/17 Max. 5.45 H 15.30 15.70 L 9.80 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 10 Doc ID 15572 Rev 3 10.20 STFW6N120K3, STP6N120K3, STW6N120K3 Package mechanical data Figure 25. TO-3PF drawing L3 L D E A C D1 Dia L2 L6 L7 F2(3x) F(3x) G1 H G R L5 N L4 7627132_C Doc ID 15572 Rev 3 11/17 Package mechanical data Table 10. STFW6N120K3, STP6N120K3, STW6N120K3 TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 12/17 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 15572 Rev 3 STFW6N120K3, STP6N120K3, STW6N120K3 Package mechanical data Figure 26. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 15572 Rev 3 13/17 Package mechanical data Table 11. STFW6N120K3, STP6N120K3, STW6N120K3 TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 14/17 Max. 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 Doc ID 15572 Rev 3 5.70 STFW6N120K3, STP6N120K3, STW6N120K3 Package mechanical data Figure 27. TO-247 drawing 0075325_G Doc ID 15572 Rev 3 15/17 Revision history 5 STFW6N120K3, STP6N120K3, STW6N120K3 Revision history Table 12. 16/17 Document revision history Date Revision Changes 15-Apr-2009 1 First release. 02-Aug-2010 2 Document status promoted from preliminary data to datasheet. Inserted Section 2.1: Electrical characteristics (curves). 14-Nov-2012 3 Figure 13: Capacitance variations and Figure 14: Gate charge vs gate-source voltage have been corrected. Minor text changes. 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