STGB10H60DF

STGB10H60DF, STGF10H60DF, STGP10H60DF Datasheet Trench gate field-stop 600 V, 10 A high speed H series IGBT Features TAB 3 1 D2 PAK 1 2 3 TO-220FP TAB 1 2 3 • • • • • • High speed switching Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated Ultrafast soft recovery antiparallel diode TO-220 Applications C(2, TAB) • • • G(1) Motor control UPS PFC Description E(3) NG1E3C2T These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGB10H60DF STGF10H60DF STGP10H60DF DS9880 - Rev 5 - January 2022 For further information contact your local STMicroelectronics sales office. www.st.com STGB10H60DF, STGF10H60DF, STGP10H60DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VCES IC ICP (2) VGE Parameter Value D2PAK, TO-220 Collector-emitter voltage (VGE = 0 V) TO-220FP V 600 Continuous collector current at TC = 25 °C 20 20 Continuous collector current at TC = 100 °C 10 10 (1) Pulsed collector current 40 40 Gate-emitter voltage ±20 Transient gate-emitter voltage ±30 Unit (1) A A V Continuous forward current at TC = 25 °C 20 20 (1) Continuous forward current at TC = 100 °C 10 10 (1) IFP (2) Pulsed forward current 40 40 A VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; Tc = 25 °C) 2.5 kV PTOT Total power dissipation at TC = 25 °C 30 W TSTG Storage temperature range -55 to 150 Operating junction temperature range -55 to 175 IF TJ 115 A °C 1. Limited by maximum junction temperature. 2. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol DS9880 - Rev 5 Parameter Value D2PAK, TO-220 TO-220FP Unit RthJC Thermal resistance, junction-to-case IGBT 1.3 5 °C/W RthJC Thermal resistance, junction-to-case diode 2.78 6.25 °C/W RthJA Thermal resistance, junction-to-ambient 62.5 62.5 °C/W page 2/25 STGB10H60DF, STGF10H60DF, STGP10H60DF Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified. Table 3. Static Symbol Parameter V(BR)CES Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation voltage Test conditions VGE = 0 V, IC = 2 mA Min. Typ. 600 1.50 VGE = 15 V, IC = 10 A, TJ = 125 °C 1.65 VGE = 15 V, IC = 10 A, TJ = 175 °C 1.70 Gate threshold voltage VCE = VGE, IC = 250 μA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC= 10 A VGE(th) Max. 6 1.95 V 7 V VCE = 600 V, VGE = 0 V 25 μA VGE = ±20 V, VCE = 0 V ±250 nA Max. Unit - pF - nC Table 4. Dynamic Symbol DS9880 - Rev 5 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge Test conditions Min. Typ. 1300 VCE = 25 V, f = 1 MHz, VGE = 0 V - 60 30 57 VCC = 480 V, IC = 10 A, VGE = 0 to 15 V (see Figure 35. Gate charge test circuit) - 8 27 page 3/25 STGB10H60DF, STGF10H60DF, STGP10H60DF Electrical characteristics Table 5. Switching characteristics (inductive load) Symbol td(on) Parameter Test conditions Min. Typ. Turn-on delay time VCE = 400 V, IC = 10 A, RG = 10 Ω, 19.5 Current rise time VGE = 15 V 6.9 Turn-on current slope (see Figure 34. Test circuit for inductive load switching and Figure 36. Switching waveform) Turn-on delay time VCE = 400 V, IC = 10 A, RG = 10 Ω, Current rise time VGE = 15 V, TJ = 175 °C Turn-on current slope (see Figure 34. Test circuit for inductive load switching and Figure 36. Switching waveform) 1176 tr(Voff) Off voltage rise time VCE = 400 V, IC = 10 A, RG = 10 Ω, 19.6 td(off) Turn-off delay time VGE = 15 V 103 Current fall time (see Figure 34. Test circuit for inductive load switching and Figure 36. Switching waveform) 73 tr(Voff) Off voltage rise time VCE = 400 V, IC = 10 A, RG = 10 Ω, td(off) Turn-off delay time VGE = 15 V, TJ = 175 °C 104 tf Current fall time (see Figure 34. Test circuit for inductive load switching and Figure 36. Switching waveform) 110 tsc Short-circuit withstand VCC ≤ 360 V, VGE = 15 V, RG = 10 Ω time tr (di/dt)on td(on) tr (di/dt)on tf Max. ns 1170 - 20 A/μs ns 6.8 - 28 Unit A/μs - ns 3 5 - μs Min. Typ. Max. Unit - μJ Table 6. Switching energy (inductive load) Symbol Parameter Test conditions Eon (1) Turn-on switching energy VCE = 400 V, IC = 10 A, RG = 10 Ω, 83 Eoff (2) Turn-off switching energy VGE = 15 V (see Figure 34. Test circuit for inductive load switching) 140 Ets Total switching energy - 223 Eon(1) Turn-on switching energy VCE = 400 V, IC = 10 A, RG = 10 Ω, 148 Eoff (2) Turn-off switching energy VGE = 15 V, TJ = 175 °C (see Figure 34. Test circuit for inductive load switching) 214 Ets Total switching energy 362 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. DS9880 - Rev 5 page 4/25 STGB10H60DF, STGF10H60DF, STGP10H60DF Electrical characteristics Table 7. Collector-emitter diode Symbol VF Forward on-voltage trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge Irrm DS9880 - Rev 5 Parameter Reverse recovery current Test conditions IF = 10 A IF = 10 A, TJ = 175 °C Min. - Typ. Max. 1.7 2.2 1.3 Unit V 107 ns 120 nC 2.24 A 161 ns 362 nC 4.5 A Vr = 60 V; IF = 10 A, diF/dt = 100 A / μs (see Figure 37. Diode reverse recovery waveform) Vr = 60 V; IF = 10 A, diF/dt = 100 A / μs TJ = 175 °C (see Figure 37. Diode reverse recovery waveform) page 5/25 STGB10H60DF, STGF10H60DF, STGP10H60DF Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature for D2PAK and TO-220 GIPD281020131339FSR Ptot (W) 140 Figure 2. Collector current vs case temperature for D2PAK and TO-220 GIP D230420191104MT IC (A) 20 120 100 15 80 10 60 40 20 0 0 VGE≥ 15V, T J≤ 175 °C 50 25 75 100 125 150 175 TC(°C) Figure 3. Power dissipation vs case temperature for TO-220FP GIPD281020131351FSR 5 VGE ≥ 15V, TJ ≤ 175 °C 0 0 25 50 75 100 125 150 175 TC (°C) Figure 4. Collector current vs case temperature for TO-220FP GIPD281020131401FSR IC (A) 15 10 5 VGE ≥ 15V, T J ≤ 175 °C 0 0 Figure 5. Output characteristics (TJ = 25°C) IC (A) GIPD281020131405FSR 11V VGE=15V 50 100 150 TC(°C) Figure 6. Output characteristics (TJ = 175°C) IC (A) GIPD281020131411FSR 11V VGE=15V 13V 30 30 9V 9V 20 20 10 10 7V 0 0 DS9880 - Rev 5 1 2 3 4 VCE(V) 0 0 1 2 3 4 VCE(V) page 6/25 STGB10H60DF, STGF10H60DF, STGP10H60DF Electrical characteristics (curves) Figure 7. VCE(sat) vs junction temperature GIP D281020131418FS R VCE(s a t) GE = IC = 20A 15V Figure 8. VCE(sat) vs collector current VCE(sat) (V) GADG130620191022VCEC TJ = 175°C 2.2 VGE = 15 V 2.0 TJ = 25°C 1.8 1.8 IC = 10A 1.6 1.6 1.4 1.4 IC 1.2 1.0 -50 0.8 0 TJ (°C Figure 9. Collector current vs switching frequency for D2PAK and TO-220 IC (A) 4 8 12 TC = 80°C 20 12 TC = 80°C TC = 100°C 8 20 10 4 Rectangular current shape (duty cycle = 0.5, VCC = 400 V, RG = 4.7Ω, VGE = 0/15 V , TJ = 175 °C) 0 10 0 10 1 f (kHz) 10 2 Figure 11. Forward bias safe operating area for D2PAK and TO-220 GIPD281020131452FSR IC (A) Rectangular current shape (duty cycle = 0.5, VCC = 400 V, RG = 4.7Ω, VGE = 0/15 V , TJ = 175 °C) 0 10 0 10 1 f (kHz) 10 2 Figure 12. Forward bias safe operating area for TO-220FP GIPD281020131505FSR IC (A) 10 10 10 µs 10 µs 100 µs 100 µs 1 0.1 DS9880 - Rev 5 IC (A) GADG130620191023CCS 16 TC = 100°C 16 Figure 10. Collector current vs switching frequency for TO-220FP IC (A) GADG130620191139CCS 40 30 TJ = -40°C 1.2 Tj≤175 °C, Tc= 25°C VGE = 15 V single pulse 1 10 100 1 ms 0.1 VCE(V) Tj≤175 °C, Tc= 25°C VGE = 15 V single pulse 1 1 10 100 1 ms VCE(V) page 7/25 STGB10H60DF, STGF10H60DF, STGP10H60DF Electrical characteristics (curves) Figure 14. Diode VF vs forward current Figure 13. Transfer characteristics GIPD281020131513FSR IC (A) 35 VF (V) GADG130620191024DVF TJ = 40 °C VCE=5V 2.0 30 25 TJ = 25 °C 1.6 20 TJ=175°C 10 0.8 TJ=25°C 5 0 6 TJ = 175 °C 1.2 15 TJ=-40°C 8 7 10 9 VGE(V) Figure 15. Normalized VGE(th) vs junction temperature GIPD281020131600FSR VGE(th) (norm) 1.1 IC= 1mA VCE= VGE 0.4 0 4 8 12 16 20 IF (A) Figure 16. Normalized V(BR)CES vs junction temperature V(BR)CES (Norm.) GADG130620191025NVBR 1.10 1.0 IC = 2mA 1.05 0.9 1.00 0.8 0.95 0.7 0.6 -50 0 50 100 150 TJ(°C) Figure 17. Capacitance variation C (pF) 0 50 100 150 TJ (°C) Figure 18. Gate charge vs gate-emitter voltage GADG130620191026CVR GIPD281020131606FSR VGE (V) CIES 10 3 0.90 -50 IC= 10A IGE= 1mA VCC= 480V 16 12 10 2 8 10 0 10 -1 DS9880 - Rev 5 COES f = 1MHZ 10 1 CRES 4 0 10 0 10 1 10 2 VCE (V) 0 20 40 60 Qg (nC) page 8/25 STGB10H60DF, STGF10H60DF, STGP10H60DF Electrical characteristics (curves) Figure 19. Switching energy vs collector current E (µJ) GADG130620191055SLC VCC = 400V, VGE = 15V, RG = 10Ω, TJ = 175°C 360 Figure 20. Switching energy vs gate resistance GIPD281020131618FSR E (µJ) Eoff VCC = 400 V, V GE = 15 V, IC = 10 A, TJ = 175 °C 260 300 Eon 240 EOFF 220 180 180 120 EON 140 60 100 0 0 4 8 12 16 20 IC (A) Figure 21. Switching energy vs temperature 0 10 20 30 E (µJ) VCC= 400V, V GE= 15V, RG= 10Ω, IC= 10A 250 200 EOFF RG(Ω) Figure 22. Switching energy vs collector-emitter voltage GIPD281020131623FSR E (µJ) 40 GIPD281020131630FSR TJ= 175°C, VGE= 15V, RG= 10Ω, IC= 10A 200 EOFF 150 150 EON 100 EON 100 50 50 0 -50 0 50 100 150 Figure 23. Short circuit time and current vs VGE GIPD281020131634FSR ISC(A) tsc (µs) VCC= 360V, RG= 10W 0 200 TJ(°C) 350 400 450 VCE(V) t (ns) GIPD281020131641FSR TJ= 175°C, VGE= 15V, RG= 10Ω, VCC= 400V 200 tSC 12 300 Figure 24. Switching times vs collector current ISC 14 250 tf t doff 10 150 100 tr 8 100 t don 6 4 DS9880 - Rev 5 10 11 12 13 14 50 VGE(V) 10 0 4 8 12 16 IC(A) page 9/25 STGB10H60DF, STGF10H60DF, STGP10H60DF Electrical characteristics (curves) Figure 25. Switching times vs gate resistance Figure 26. Reverse recovery current vs diode current slope GIPD281020131655FSR t (ns) TJ= 175°C, VGE= 15V, IC= 10A, VCC= 400V IF = 10A, Vr = 400V 20 t doff tf 100 GIPD281020131713FSR Irm (A) TJ =175°C 16 12 tr t don 10 8 TJ =25°C 4 1 0 10 20 30 40 0 0 RG(Ω) Figure 27. Reverse recovery time vs diode current slope 200 400 Figure 28. Reverse recovery charge vs diode current slope GIPD281020131720FSR t rr (µs) GIPD281020131724FSR Qrr (nC) IF = 10A, Vr = 400V 160 500 120 400 IF = 10A, Vr = 400V TJ =175°C 300 TJ =175°C 80 800 di/dt(A/ µs) 600 TJ =25°C 200 40 0 0 100 TJ =25°C 200 400 600 Figure 29. Reverse recovery energy vs diode current slope GIPD281020131728FSR Err (µJ) 0 0 800 di/dt(A/ µs) 200 400 800 di/dt(A/ µs) 600 Figure 30. Normalized transient thermal impedance for TO-220 and D2PAK (IGBT) ZthTO2T_B K δ=0.5 IF = 10A, Vr = 400V 140 0.2 120 TJ =175°C 0.1 100 0.05 -1 10 0.02 80 TJ =25°C 60 0.01 40 20 DS9880 - Rev 5 Zth = k*RthJC δ = tp/t Single pulse tp 0 200 400 600 800 di/dt(A/ µs) t -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 tp (s) page 10/25 STGB10H60DF, STGF10H60DF, STGP10H60DF Electrical characteristics (curves) Figure 31. Normalized transient thermal impedance for TO-220FP (IGBT) Figure 32. Normalized transient thermal impedance for TO-220 and D2PAK (diode) ZthTOF2T_B 10-1 Zth Zth= k*R k R thj-c thj-C δδ==tptp/ Ƭ /Ƭ 10-2 tpp 10-3 10-5 Zth = k*RthJC δ = tp/t ƬƬ tp t 10-4 10-3 10-2 10-1 100 tp (s) Figure 33. Normalized transient thermal impedance for TO-220FP (diode) K GC20940 10-1 10-2 10-3 10-4 DS9880 - Rev 5 10-3 10-2 10-1 100 tp (s) page 11/25 STGB10H60DF, STGF10H60DF, STGP10H60DF Test circuits 3 Test circuits Figure 34. Test circuit for inductive load switching C A Figure 35. Gate charge test circuit A k L=100 µH G E B B 3.3 µF C G + k RG 1000 µF VCC k D.U.T k E k k AM01505v1 AM01504v1 Figure 36. Switching waveform Figure 37. Diode reverse recovery waveform 90% 10% VG 90% VCE 10% tr(Voff) tcross 25 90% IC td(on) ton td(off) tr(Ion) 10% tf toff AM01506v1 DS9880 - Rev 5 page 12/25 STGB10H60DF, STGF10H60DF, STGP10H60DF Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 D²PAK (TO-263) type A2 package information Figure 38. D²PAK (TO-263) type A2 package outline 0079457_A2_26 DS9880 - Rev 5 page 13/25 STGB10H60DF, STGF10H60DF, STGP10H60DF D²PAK (TO-263) type A2 package information Table 8. D²PAK (TO-263) type A2 package mechanical data Dim. mm Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 E1 8.70 8.90 9.10 E2 7.30 7.50 7.70 e 10.40 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 DS9880 - Rev 5 Typ. 0.40 0° 8° page 14/25 STGB10H60DF, STGF10H60DF, STGP10H60DF D²PAK (TO-263) type A2 package information Figure 39. D²PAK (TO-263) recommended footprint (dimensions are in mm) 0079457_Rev26_footprint DS9880 - Rev 5 page 15/25 STGB10H60DF, STGF10H60DF, STGP10H60DF D²PAK packing information 4.2 D²PAK packing information Figure 40. D²PAK tape outline DS9880 - Rev 5 page 16/25 STGB10H60DF, STGF10H60DF, STGP10H60DF D²PAK packing information Figure 41. D²PAK reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 9. D²PAK tape and reel mechanical data Tape Dim. DS9880 - Rev 5 Reel mm mm Dim. Min. Max. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 330 13.2 26.4 30.4 page 17/25 STGB10H60DF, STGF10H60DF, STGP10H60DF TO-220FP package information 4.3 TO-220FP package information Figure 42. TO-220FP package outline 7012510_Rev_13_B DS9880 - Rev 5 page 18/25 STGB10H60DF, STGF10H60DF, STGP10H60DF TO-220FP package information Table 10. TO-220FP package mechanical data Dim. mm Min. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 E 0.45 0.70 F 0.75 1.00 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.20 G1 2.40 2.70 H 10.00 10.40 L2 DS9880 - Rev 5 Typ. 16.00 L3 28.60 30.60 L4 9.80 10.60 L5 2.90 3.60 L6 15.90 16.40 L7 9.00 9.30 Dia 3.00 3.20 page 19/25 STGB10H60DF, STGF10H60DF, STGP10H60DF TO-220 type A package information 4.4 TO-220 type A package information Figure 43. TO-220 type A package outline 0015988_typeA_Rev_23 DS9880 - Rev 5 page 20/25 STGB10H60DF, STGF10H60DF, STGP10H60DF TO-220 type A package information Table 11. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 Slug flatness DS9880 - Rev 5 Typ. 0.03 0.10 page 21/25 STGB10H60DF, STGF10H60DF, STGP10H60DF Ordering information 5 Ordering information Table 12. Order codes DS9880 - Rev 5 Order code Marking Package Packing STGB10H60DF GB10H60DF D2PAK Tape and reel STGF10H60DF GF10H60DF TO-220FP STGP10H60DF GP10H60DF TO-220 Tube page 22/25 STGB10H60DF, STGF10H60DF, STGP10H60DF Revision history Table 13. Document revision history Date Version 12-Aug-2013 1 Changes Initial release. Document status promoted from preliminary to production data. 31-Oct-2013 2 Inserted Section 2.1: Electrical characteristics (curves). Minor text changes. Updated title, applications and description in cover page. 20-Jun-2019 3 Added Section 5 Ordering information. Updated Section 2.1 Electrical characteristics (curves). Minor text changes. 05-Mar-2020 4 Updated Table 3. Static and Table 4. Dynamic. Minor text changes. Modified Figure 30. Normalized transient thermal impedance for TO-220 and D2PAK (IGBT) and Figure 32. Normalized transient thermal impedance for TO-220 and D2PAK (diode). 21-Jan-2022 5 Added Figure 31. Normalized transient thermal impedance for TO-220FP (IGBT) and Figure 33. Normalized transient thermal impedance for TO-220FP (diode). Minor text changes. DS9880 - Rev 5 page 23/25 STGB10H60DF, STGF10H60DF, STGP10H60DF Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 5 4.1 D²PAK (TO-263) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.2 D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.3 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4.4 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 DS9880 - Rev 5 page 24/25 STGB10H60DF, STGF10H60DF, STGP10H60DF IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2022 STMicroelectronics – All rights reserved DS9880 - Rev 5 page 25/25