STGB15H60DF, STGF15H60DF, STGP15H60DF
Datasheet
Trench gate field-stop IGBT, H series 600 V, 14 A high speed
Features
TAB
3
1
D2 PAK
1
2
3
TO-220FP
TAB
1
2
3
•
•
•
•
•
•
High speed switching
Tight parameters distribution
Safe paralleling
Low thermal resistance
Short-circuit rated
Ultrafast soft recovery antiparallel diode
TO-220
Applications
C(2, TAB)
•
•
Motor control
UPS, PFC
G(1)
Description
E(3)
NG1E3C2T
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the H series of IGBTs, which represents an
optimum compromise between conduction and switching losses to maximize the
efficiency of high switching frequency converters. Furthermore, a slightly positive
VCE(sat) temperature coefficient and very tight parameter distribution result in safer
paralleling operation.
Product status link
STGB15H60DF
STGF15H60DF
STGP15H60DF
DS9881 - Rev 3 - April 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
STGB15H60DF, STGF15H60DF, STGP15H60DF
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
VCES
IC
ICP (2)
VGE
Parameter
Value
D2PAK,
TO-220FP
TO-220
Collector-emitter voltage (VGE = 0 V)
600
V
Continuous collector current at TC = 25 °C
30
30 (1)
Continuous collector current at TC = 100 °C
15
15 (1)
Pulsed collector current
60
60
Gate-emitter voltage
Unit
±20
A
A
V
Continuous forward current TC = 25 °C
30
30 (1)
Continuous forward current at TC = 100 °C
15
15 (1)
IFP (2)
Pulsed forward current
60
60
A
VISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink
2500
V
30
W
IF
A
(t = 1 s; Tc = 25 °C)
PTOT
Total power dissipation at TC = 25 °C
TSTG
Storage temperature range
-55 to 150
Operating junction temperature range
-55 to 175
TJ
115
°C
1. Limited by maximum junction temperature.
2. Pulse width limited by maximum junction temperature.
Table 2. Thermal data
Symbol
DS9881 - Rev 3
Parameter
Value
D2PAK,
TO-220
TO-220FP
Unit
RthJC
Thermal resistance junction-case IGBT
1.3
5
°C/W
RthJC
Thermal resistance junction-case diode
2.78
6.25
°C/W
RthJA
Thermal resistance junction-ambient
62.5
62.5
°C/W
page 2/24
STGB15H60DF, STGF15H60DF, STGP15H60DF
Electrical characteristics
2
Electrical characteristics
TC = 25 °C unless otherwise specified.
Table 3. Static
Symbol
V(BR)CES
Parameter
Collector-emitter breakdown
voltage
Test conditions
VGE = 0 V, IC = 2 mA
Min.
VGE = 15 V, IC = 15 A
Gate threshold voltage
ICES
Collector cut-off current
IGES
Gate-emitter leakage current
VCE = VGE, IC = 1 mA
V
1.8
TJ = 175 °C
VGE(th)
2.0
1.7
TJ = 125 °C
Unit
V
1.6
VGE = 15 V, IC = 15 A
VCE(sat)
Max.
600
VGE = 15 V, IC= 15 A
Collector-emitter saturation
voltage
Typ.
5.0
6.0
VCE = 600 V
VGE = 0 V
VGE = ±20 V
VCE = 0 V
7.0
V
25
μA
±250
nA
Max.
Unit
-
pF
-
nC
Max.
Unit
Table 4. Dynamic
Symbol
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0 V
Min.
Typ.
1952
-
78
45
Qg
Total gate charge
VCC = 480 V, IC = 15 A,
Qge
Gate-emitter charge
Qgc
Gate-collector charge
VGE = 0 to 15 V (see Figure 33. Gate
charge test circuit)
81
-
8
42
Table 5. Switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(on)
tr
(di/dt)on
DS9881 - Rev 3
Parameter
Test conditions
Min.
Typ.
Turn-on delay time
VCE = 400 V, IC = 15 A,
24.5
Current rise time
RG = 10 Ω, VGE = 15 V (see
Figure 32. Test circuit for inductive load
switching and Figure 34. Switching
waveform)
8.2
Turn-on current slope
ns
1470
Turn-on delay time
VCE = 400 V, IC = 15 A,
25
Current rise time
RG = 10 Ω, VGE = 15 V
9
Turn-on current slope
TJ = 175 °C (see Figure 32. Test circuit
for inductive load switching and
Figure 34. Switching waveform)
1370
A/μs
ns
A/μs
page 3/24
STGB15H60DF, STGF15H60DF, STGP15H60DF
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
tr(Voff)
Off voltage rise time
VCE = 400 V, IC = 15 A,
18
td(off)
Turn-off delay time
RG = 10 Ω, VGE = 15 V (see
Figure 32. Test circuit for inductive load
switching and Figure 34. Switching
waveform)
118
tf
Current fall time
Off voltage rise time
VCE = 400 V, IC = 15 A,
27
td(off)
Turn-off delay time
RG = 10 Ω, VGE = 15 V
124
tf
Current fall time
TJ = 175 °C (see Figure 32. Test circuit
for inductive load switching and
Figure 34. Switching waveform)
101
tsc
Short-circuit withstand time
RG = 10 Ω
Unit
-
ns
69
tr(Voff)
VCC ≤ 360 V, VGE = 15 V,
Max.
3
5
-
μs
Min.
Typ.
Max.
Unit
-
μJ
Typ.
Max.
Unit
1.8
2.2
Table 6. Switching energy (inductive load)
Symbol
Parameter
Test conditions
(1)
Turn-on switching energy
VCE = 400 V, IC = 15 A,
136
Eoff (2)
Turn-off switching energy
207
Eon
Total switching energy
RG = 10 Ω, VGE = 15 V
(see Figure 32. Test circuit for inductive
load switching)
(1)
Turn-on switching energy
VCE = 400 V, IC = 15 A,
Eoff (2)
Turn-off switching energy
RG = 10 Ω, VGE = 15 V
329
Total switching energy
TJ = 175 °C
(see Figure 32. Test circuit for inductive
load switching)
553
Ets
Eon
Ets
343
-
224
1. Including the reverse recovery of the diode.
2. Including the tail of the collector current.
Table 7. Collector-emitter diode
Symbol
Test conditions
IF = 15 A
Min.
VF
Forward on-voltage
trr
Reverse recovery time
Vr = 60 V; IF = 15 A;
103
ns
Qrr
Reverse recovery charge
128
nC
Irrm
Reverse recovery current
diF/dt = 100 A / μs
(see Figure 35. Diode reverse recovery
waveform)
2.5
A
trr
Reverse recovery time
Vr = 60 V; IF = 15 A;
182
ns
Qrr
Reverse recovery charge
diF/dt = 100 A / μs
437
nC
Reverse recovery current
TJ = 175 °C
(see Figure 35. Diode reverse recovery
waveform)
4.8
A
Irrm
DS9881 - Rev 3
Parameter
IF = 15 A, TJ = 175 °C
-
-
1.3
V
page 4/24
STGB15H60DF, STGF15H60DF, STGP15H60DF
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Power dissipation vs case temperature for
D2PAK and TO-220
GIPD041020131126FSR
Ptot
(W)
Figure 2. Collector current vs case temperature for D2PAK
and TO-220
120
30
100
25
80
20
60
15
40
10
20
5
0
0
50
25
75
100 125 150 175 TC(°C)
Figure 3. Power dissipation vs case temperature for
TO-220FP
GIPD151020131527SA
Ptot
(W)
GIPD011020131132FSR
IC
(A)
0
0
VGE ≥ 15V, T J ≤ 175 °C
50
25
75
100 125 150 175 TC(°C)
Figure 4. Collector current vs case temperature for
TO-220FP
GIPD151020131600SA
IC
(A)
16
30
12
20
8
10
4
0
0
50
100
150
TC(°C)
Figure 5. Output characteristics (TJ = 25°C)
IC
(A)
40
GIPD041020131136FSR
11V
VGE=15V
9V
35
IC
(A)
40
25
20
20
15
15
10
10
1
2
3
4
VCE(V)
100
150
TC(°C)
GIPD041020131142FSR
11V
VGE=15 V
9V
35
25
7V
50
Figure 6. Output characteristics (TJ = 175°C)
30
0
0
DS9881 - Rev 3
0
0
30
5
VGE ≥ 15V, T J ≤ 175 °C
5
0
0
7V
1
2
3
4
VCE (V)
page 5/24
STGB15H60DF, STGF15H60DF, STGP15H60DF
Electrical characteristics (curves)
Figure 7. VCE(sat) vs junction temperature
GIPD041020131148FSR
VCE(sat)
(V)
2.4
VGE= 15V
Figure 8. VCE(sat) vs collector current
GIPD041020131152FSR
VCE(sat)
(V)
2.2
TJ= 175°C
VGE= 15V
2.4
IC= 30A
2.2
2.0
TJ= 25°C
2.0
IC= 15A
1.8
1.8
1.6
1.6
TJ= -40°C
IC= 10A
1.4
1.4
1.2
-50
0
50
100
150
TJ(°C)
Figure 9. Collector current vs switching frequency for
D2PAK and TO-220
GIPD161020130955SA
Ic [A]
40
1.2
0
5
10
15
20
25
30
IC(A)
Figure 10. Collector current vs switching frequency for
TO-220FP
GIPD161020130958SA
Ic [A]
20
Tc=80°C
Tc=80°C
Tc=100 °C
30
15
10
20
10
0
Tc=100 °C
5
Rectangular current shape,
(duty cycle = 0.5, VCC = 400 V, RG = 4,7 Ω
VGE = 0/15 V, TJ = 175 °C
rectangular current shape,
(duty cycle=0.5, VCC = 400V, RG=4.7 Ω,
VGE = 0/15 V, TJ =175°C)
0
1
f [kHz]
10
Figure 11. Forward bias safe operating area for D2PAK
and TO-220
GIPD211020131342FSR
IC
(A)
1
f [kHz]
10
Figure 12. Forward bias safe operating area for TO-220FP
GIPD211020131350FSR
IC
(A)
10 µs
10
10
10 µs
100 µs
100 µs
1
1
0.1
DS9881 - Rev 3
Single pulse
Tc= 25°C, TJ