STGB20H60DF

STGB20H60DF, STGF20H60DF, STGP20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB • High speed switching • Tight parameters distribution 3 1 3 2 1 TO-220 2 TO-220FP • Safe paralleling • Low thermal resistance • Short-circuit rated • Ultrafast soft recovery antiparallel diode TAB Applications 3 1 • Motor control D²PAK • UPS, PFC Figure 1. Internal schematic diagram Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. C (2, TAB) G (1) E (3) Table 1. Device summary Order codes Marking Packages Packaging STGB20H60DF GB20H60DF D²PAK Tape and reel STGF20H60DF GF20H60DF TO-220FP Tube STGP20H60DF GP20H60DF TO-220 Tube June 2013 This is information on a product in full production. DocID023740 Rev 4 1/22 www.st.com 22 Contents STGB20H60DF, STGF20H60DF, STGP20H60DF Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2/22 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 DocID023740 Rev 4 STGB20H60DF, STGF20H60DF, STGP20H60DF 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VCES Parameter TO-220 Collector-emitter voltage (VGE = 0) Continuous collector current at TC = 25 °C TO-220FP D²PAK 600 V 40 40(1) A 20 (1) 20 A 80 80(1) A IC Continuous collector current at TC = 100 °C ICP (2) VGE Pulsed collector current Unit Gate-emitter voltage ±20 V Continuous forward current TC = 25 °C 40 40(1) Continuous forward current at TC = 100 °C 20 20(1) IFP(2) Pulsed forward current 80 80(1) A PTOT Total dissipation at TC = 25 °C 167 37 W TSTG Storage temperature range - 55 to 150 Operating junction temperature - 55 to 175 A IF °C TJ 1. Limited by maximum junction temperature. 2. Pulse width limited by maximum junction temperature and turn-off within RBSOA. Table 3. Thermal data Symbol Parameter TO-220 D²PAK TO-220FP Unit RthJC Thermal resistance junction-case IGBT 0.9 4 °C/W RthJC Thermal resistance junction-case diode 2.5 5.6 °C/W RthJA Thermal resistance junction-ambient DocID023740 Rev 4 62.5 °C/W 3/22 Electrical characteristics 2 STGB20H60DF, STGF20H60DF, STGP20H60DF Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) Unit V 1.6 VGE = 15 V, IC = 20 A Collector-emitter saturation TJ = 125 °C voltage VGE = 15 V, IC = 20 A TJ = 175 °C VGE(th) Max. 600 VGE = 15 V, IC = 20 A VCE(sat) Typ. 2.0 1.75 V 1.8 5.0 6.0 7.0 V VCE = 600 V 25 μA VGE = ± 20 V 250 nA Table 5. Dynamic Symbol 4/22 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 400 V, IC = 20 A, VGE = 15 V Qge Gate-emitter charge Qgc Gate-collector charge DocID023740 Rev 4 Min. Typ. Max. Unit - 2750 - pF - 110 - pF - 65 - pF - 115 - nC - 22 - nC - 45 - nC STGB20H60DF, STGF20H60DF, STGP20H60DF Electrical characteristics Table 6. Switching characteristics (inductive load) Symbol td(on) Parameter Test conditions Turn-on delay time VCE = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V Current rise time tr (di/dt)on td(on) tr Turn-on current slope Turn-on delay time Current rise time (di/dt)on tr(Voff) td(off) tf Min. Turn-on current slope VCE = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V TJ = 175 °C Off voltage rise time Off voltage rise time td(off) Turn-off delay time tf Current fall time VCE = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V TJ = 175 °C tsc Short-circuit withstand time VCC ≤ 360 V, VGE = 15 V Unit 42.5 - ns 11.9 - ns 1345 - A/μs 42.5 - ns 13.4 ns 1180 A/μs - ns 177 - ns 55 - ns 26 - ns 173 - ns 86 - ns 5 - μs Min. Typ. Max. Unit - 209 - μJ - 261 - μJ - 470 - μJ - 480 - μJ - 416 - μJ - 896 - μJ Current fall time tr(Voff) Max. 20 VCE = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V Turn-off delay time Typ. 3 Table 7. Switching energy (inductive load) Symbol Eon (1) Eoff (2) Ets Test conditions Turn-on switching losses Turn-off switching losses Turn-on switching losses (2) Turn-off switching losses Ets VCE = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V Total switching losses Eon (1) Eoff 1. Parameter Total switching losses VCE = 400 V, IC = 20 A, RG = 10 Ω, VGE = 15 V TJ = 175 °C Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. DocID023740 Rev 4 5/22 Electrical characteristics STGB20H60DF, STGF20H60DF, STGP20H60DF Table 8. Collector-emitter diode Symbol 6/22 Parameter Test conditions VF Forward on-voltage IF = 20 A IF = 20 A, TJ = 175 °C trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current Min. Typ. Max. Unit 1.8 1.3 2.2 - V V - 90 - ns Vr = 60 V; IF = 20 A; diF/dt = 100 A / μs Vr = 60 V; IF = 20 A; diF/dt = 100 A / μs TJ = 175 °C DocID023740 Rev 4 110 nC 2.4 A - 180 - ns - 466 - nC - 5.2 - A STGB20H60DF, STGF20H60DF, STGP20H60DF 2.1 Electrical characteristics Electrical characteristics (curves) Figure 2. Output characteristics (TJ = 25°C) AM16287v1 IC (A) 11 V 100 AM16288v1 IC (A) 15 V 11 V 100 13 V 15 V 80 Figure 3. Output characteristics (TJ = 175°C) 80 60 13 V 60 9V 40 9V 40 20 20 0 0 1 3 2 4 0 VCE(V) 0 Figure 4. Transfer characteristics 1 3 2 4 VCE(V) Figure 5. Normalized VGE(th) vs junction temperature AM16289v1 IC (A) 7V -40 °C AM16292v1 VGE(th) (norm) 100 1 25 °C 80 175 °C 0.9 60 VCE= VGE IC = 1 mA VCE= 5 V 0.8 40 0.7 20 0 7 8 9 10 11 VGE(V) 0.6 -75 DocID023740 Rev 4 -25 25 75 125 TJ(°C) 7/22 Electrical characteristics STGB20H60DF, STGF20H60DF, STGP20H60DF Figure 6. Collector current vs. case temperature Figure 7. Collector current vs. case temperature for D²PAK and TO-220 for TO-220FP AM16282v1 IC (A) 40 20 32 16 24 12 16 8 8 4 0 0 25 50 75 100 125 AM162981V1 IC (A) 0 TC(°C) Figure 8. Collector current vs. frequency for D²PAK and TO-220 AM162821v1 IC (A) 0 25 50 75 100 AM162982V1 IC (A) 20 Tc= 80°C Tc= 80°C 50 16 Tc= 100°C Tc= 100°C 40 12 30 8 Rectangular current shape (duty cycle= 0.5, VCC= 400 V Rg = 10 Ω, VGE= 0/15V, TJ= 175°C 10 1 10 4 AM16281V1 Ptot (W) 120 24 80 16 40 8 8/22 50 75 100 125 150 f(kHz) AM16284V1 Ptot (W) 32 25 10 Figure 11. Power dissipation vs. case temperature for TO-220FP 160 0 Rectangular current shape (duty cycle= 0.5, VCC= 400 V Rg = 10 Ω, VGE= 0/15V, TJ= 175°C 0 1 f(kHz) Figure 10. Power dissipation vs. case temperature for D²PAK and TO-220 0 TC(°C) Figure 9. Collector current vs. frequency for TO-220FP 60 20 125 TC(°C) DocID023740 Rev 4 0 0 25 50 75 100 125 TC(°C) STGB20H60DF, STGF20H60DF, STGP20H60DF Figure 12. VCE(sat) vs. junction temperature AM16290V1 VCE(sat) (V) Electrical characteristics Figure 13. VCE(sat) vs. collector current AM16291V1 VCE(sat) (V) VGE= 15 V VGE= 15 V 2.3 TJ = 175 °C 2.2 2.1 TJ = 25 °C IC= 40 A 1.9 1.8 1.7 TJ = -40 °C IC= 20 A 1.4 1.5 IC= 10 A 1.3 -75 -25 25 75 125 TJ(°C) Figure 14. Forward bias safe operating area for D2PAK and TO-220 1.0 0 10 30 20 Figure 15. Thermal impedance for D2PAK and TO-220 AM16280V1 IC (A) IC(A) ZthTO2T_B it K VCE (sa t) lim δ=0.5 0.2 10 0.1 100 µs 0.05 -1 10 0.02 1 ms 1 Zth=k Rthj-c δ=tp/τ 0.01 (single pulse TC=25°C, TJ