STGB20NB37LZT4

STGB20NB37LZ N-CHANNEL CLAMPED 20A - D²PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE VCES VCE(sat) IC STGB20NB37LZ CLAMPED < 2.0 V 20 A ■ ■ ■ ■ ■ ■ ■ POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. 3 1 D²PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ AUTOMOTIVE IGNITION ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STGB20NB37LZT4 GB20NB37LZ D2PAK TAPE & REEL September 2003 1/8 STGB20NB37LZ ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCES Collector-Emitter Voltage (VGS = 0) VECR Emitter-Collector Voltage VGE Gate-Emitter Voltage Value Unit CLAMPED V 20 V CLAMPED V IC Collector Current (continuos) at TC = 25°C 40 A IC Collector Current (continuos) at TC = 100°C 20 A Collector Current (pulsed) 80 A Eas Single Pulse Energy Tc = 25°C 700 mJ PTOT Total Dissipation at TC = 25°C 200 W Derating Factor 1.33 W/°C 8 KV –55 to 175 °C ICM (
) ESD ESD (Human Body Model) Tstg Storage Temperature Tj Max. Operating Junction Temperature (
) Pulse width limited by safe operating area THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.75 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol BV(CES) Parameter Clamped Voltage Test Conditions Min. IC = 2 mA, VGE = 0, Tc= - 40°C IC = 2 mA, VGE = 0, Tc= 25°C Typ. 405 375 IC = 2 mA, VGE = 0, Tc= 150°C 400 28 BVGE Gate Emitter Break-down Voltage IG = ± 2 mA 12 14 ICES Collector cut-off Current (VGE = 0) RGE Gate Emitter Resistance 425 V V 20 Gate-Emitter Leakage Current (VCE = 0) V V IC = 75 mA, Tc = 25°C IGES Unit 395 Emitter Collector Break-down Voltage BV(ECR) Max. 16 V VCE = 15 V, VGE =0 ,TC =150 °C 10 µA VCE =200 V, VGE=0 ,TC =150°C 100 µA VGE = ± 10V , VCE = 0 ± 300 ± 660 ± 1000 µA 10 15 30 KΩ Typ. Max. Unit ON (*) Symbol VGE(th) VCE(SAT) 2/8 Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions Min. VCE = VGE, IC = 250µA, Tc=-40°C 1.2 VCE = VGE, IC = 250µA, Tc= 25°C 1 VCE =VGE, IC = 250µA, Tc=150°C 0.6 V 1.4 2 V VCE =4.5V, IC = 10 A, Tc= 25°C 1.1 1.8 V VCE =4.5V, IC = 10 A, Tc= 150°C 1.0 1.7 V VCE =4.5V, IC = 20 A, Tc= 25°C 1.35 2.0 V VCE =4.5V, IC = 20 A, Tc= 150°C 1.25 2.0 V V STGB20NB37LZ DYNAMIC Symbol gfs (1) Parameter Forward Transconductance VCE = 25 V , IC =20 A VCE = 25V, f = 1 MHz, VGE = 0 Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg Test Conditions Gate Charge Min. VCE = 280V, IC = 20 A, VGE = 5V Typ. Max. Unit 35 S 2300 pF 165 pF 28 pF 51 nC FUNCTIONAL CHARACTERISTICS Symbol II U.I.S. Parameter Test Conditions Min. Typ. Max. Unit Latching Current VClamp = 250 V, TC = 125 °C RGOFF = 1KΩ , VGE = 4.5 V 40 A Functional Test Open Secondary Coil RGOFF =1KΩ , L = 1.6 mH, Tc=125°C 20 A SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Test Conditions Min. VCC = 250 V, IC = 20 A RG = 1KΩ , VGE = 4.5 V Typ. Max. Unit 2.3 µs 0.6 µs 550 A/µs Turn-on Current Slope VCC= 250 V, IC = 20 A RG=1KΩ, VGE = 4.5 V Turn-on Switching Losses VCC= 250 V, IC = 20 A, Tc=25°C 8.8 mJ RG=1KΩ, VGE = 4.5 V, Tc=150°C 9.2 mJ SWITCHING OFF Symbol tc Parameter Cross-over Time Test Conditions Vcc = 250 V, IC = 20 A, RGE = 1K Ω , VGE = 4.5 V Min. Typ. Max. Unit 4.8 µs 2.6 µs tr(Voff) Off Voltage Rise Time td(off) Delay Time 2.0 µs Fall Time 11.5 µs 11.8 mJ 7.8 µs 3.5 µs µs tf Eoff(**) tc Turn-off Switching Loss Cross-over Time Vcc = 250 V, IC = 20 A, RGE = 1K Ω , VGE = 4.5 V Tj = 125 °C tr(Voff) Off Voltage Rise Time td(off) Delay Time 3.9 Fall Time 12.0 µs Turn-off Switching Loss 17.8 mJ tf Eoff(**) (1)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (*)Pulse width limited by max. junction temperature. (**)Losses Include Also the Tail 3/8 STGB20NB37LZ Output Characteristics Transfer Characteristics Normalized Gate Threshold Voltage vs Temp. Transconductance Collector-Emitter On Voltage vs Temperature Self Clamped Inductive Switching Energy vs Open Secondary Coil 4/8 STGB20NB37LZ Capacitance Variations Gate Charge vs Gate-Emitter Voltage Normalized BVGEO (Zener Gate-Emitter) vs Temperature Normalized Clamping Voltage vs Gate Resistance (Inductive Switch Configuration) Normalized Clamping Voltage vs Temperature Thermal Impedance 5/8 STGB20NB37LZ D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 6/8 1 STGB20NB37LZ D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm MIN. inch MAX. MIN. 1.5 C 12.8 D 20.2 G 24.4 N 100 MAX. 12.992 0.059 13.2 0.504 0.520 0795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type inch MIN. 330 T TAPE MECHANICAL DATA MAX. 0.933 0.956 7/8 STGB20NB37LZ Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 8/8