STGB20V60F

STGB20V60F, STGP20V60F 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Very high speed switching series TAB • Tail-less switching off TAB • Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A 3 3 2 1 D2PAK 1 • Tight parameters distribution • Safe paralleling TO-220 • Low thermal resistance • Lead free package Applications Figure 1. Internal schematic diagram • Photovoltaic inverters • Uninterruptible power supply C (2, TAB) • Welding • Power factor correction • Very high frequency converters G (1) Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. E (3) Table 1. Device summary Order code Marking Package Packaging STGB20V60F GB20V60F D2PAK Tape and reel STGP20V60F GP20V60F TO-220 Tube July 2013 This is information on a product in full production. DocID024890 Rev 1 1/18 www.st.com 18 Contents STGB20V60F, STGP20V60F Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 DocID024890 Rev 1 STGB20V60F, STGP20V60F 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0) 600 V IC Continuous collector current at TC = 25 °C 40 A IC Continuous collector current at TC = 100 °C 20 A ICP(1) Pulsed collector current 80 A VGE Gate-emitter voltage ±20 V PTOT Total dissipation at TC = 25 °C 167 W TSTG Storage temperature range - 55 to 150 °C Operating junction temperature - 55 to 175 °C VCES TJ Parameter 1. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case 0.9 °C/W RthJA Thermal resistance junction-ambient 50 °C/W DocID024890 Rev 1 3/18 Electrical characteristics 2 STGB20V60F, STGP20V60F Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) Unit V 1.8 VGE = 15 V, IC = 20 A Collector-emitter saturation TJ = 125 °C voltage VGE = 15 V, IC = 20 A TJ = 175 °C VGE(th) Max. 600 VGE = 15 V, IC = 20 A VCE(sat) Typ. 2.2 2.15 V 2.3 5 6 7 V VCE = 600 V 25 μA VGE = ± 20 V 250 nA Table 5. Dynamic characteristics Symbol 4/18 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 480 V, IC = 20 A, VGE = 15 V, see Figure 22 Qge Gate-emitter charge Qgc Gate-collector charge DocID024890 Rev 1 Min. Typ. Max. Unit - 2800 - pF - 110 - pF - 64 - pF - 116 - nC - 24 - nC - 50 - nC STGB20V60F, STGP20V60F Electrical characteristics Table 6. Switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Test conditions Min. Typ. Max. Unit Turn-on delay time - 38 - ns Current rise time - 10 - ns - 1556 - A/μs - 149 - ns - 15 - ns Turn-on current slope VCE = 400 V, IC = 20 A, VGE = 15 V, di/dt = 100 A/μs see Figure 21 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 200 - μJ Eoff(2) Turn-off switching losses - 130 - μJ Total switching losses - 330 - μJ Turn-on delay time - 37 - ns Current rise time - 12 - ns - 1340 - A/μs - 150 - ns - 23 - ns Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope VCE = 400 V, IC = 20 A, di/dt = 100 A/μs, VGE = 15 V, TJ = 175 °C, see Figure 21 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 430 - μJ Eoff(2) Turn-off switching losses - 210 - μJ Total switching losses - 640 - μJ Ets 1. Parameter Energy losses include reverse recovery of the external diode. The diode is the same of the copacked STGW20V60DF 2. Turn-off losses include also the tail of the collector current. DocID024890 Rev 1 5/18 Electrical characteristics 2.1 STGB20V60F, STGP20V60F Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature AM17175v1 Ptot (W) Figure 3. Collector current vs. case temperature 160 40 140 35 120 30 100 25 80 20 60 15 40 10 20 5 0 AM17174v1 I C (A) 0 0 25 50 75 0 100 125 150 175 TC (°C) Figure 4. Output characteristics (TJ = 25 °C) AM17171v1 Ic (A) 15 V 25 50 75 100 125 150 175 TC (°C) Figure 5. Output characteristics (TJ = 175 °C) AM17172v1 Ic (A) 11 V 70 70 60 60 50 50 15 V 40 11 V 40 13 V 13 V 9V 30 30 9V 20 20 10 10 VGE =7 V VGE =7 V 0 0 1 2 3 4 VCE (V) Figure 6. VCE(SAT) vs. junction temperature VCE(sat) (V) 2.8 AM17176v1 VGE = 15V 2.6 3 4 VCE (V) Figure 7. VCE(SAT) vs. collector current VCE(sat) (V) AM17177v1 VGE = 15V TJ = 175°C TJ = 25°C 2.8 2.4 1.8 2.0 IC = 10A TJ = - 40°C 1.6 1.4 6/18 2 3.2 IC = 20A 2.0 1.2 -50 -25 0 1 3.6 2.4 1.6 0 4.0 IC 40A 2.2 0 1.2 25 50 75 100 125 150 175 TJ (ºC) 0.8 DocID024890 Rev 1 0 10 20 30 40 50 60 70 80 I C (A) STGB20V60F, STGP20V60F Electrical characteristics Figure 8. Safe operating area Figure 9. Transfer characteristics AM17179v1 I C (A) AM17173v1 IC (A) 70 10 60 10 μs 1 50 100 μs 40 1 ms 30 0.1 TJ=175°C (single pulse TC =25 °C, TJ