STGB30H60DF

STGP30H60DF Datasheet Trench gate field-stop 600 V, 30 A high speed IGBT Features TAB 1 2 3 TO-220 • • • • • • High speed switching Tight parameters distribution Safe paralleling Low thermal resistance Short circuit rated Ultrafast soft recovery antiparallel diode Applications • • • Inverter UPS PFC Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status link STGP30H60DF Product summary Order code STGP30H60DF Marking GP30H60DF Package TO-220 Packing Tube DS8709 - Rev 4 - September 2020 For further information contact your local STMicroelectronics sales office. www.st.com STGP30H60DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 600 V Continuous collector current at TC = 25 °C 60 Continuous collector current at TC = 100 °C 30 ICP(1) Pulsed collector current 120 A VGE Gate-emitter voltage ±20 V Continuous forward current at TC = 25 °C 60 Continuous forward current at TC = 100 °C 30 IFP(1) Pulsed forward current 120 A PTOT Total power dissipation at TC = 25 °C 260 W Tstg Storage temperature range - 55 to 150 °C Operating junction temperature range - 55 to 175 °C Value Unit VCES IC IF TJ Parameter A A 1. Pulse width limited by maximum junction temperature and turn-off within RBSOA. Table 2. Thermal data Symbol RthJC RthJA DS8709 - Rev 4 Parameter Thermal resistance junction-case IGBT 0.58 Thermal resistance junction-case diode 2.5 Thermal resistance junction-ambient 62.5 °C/W °C/W page 2/14 STGP30H60DF Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 3. Static characteristics Symbol Parameter Test conditions V(BR)CES Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation voltage VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current VGE = 0 V, IC = 2 mA Min. Typ. Max. 600 V VGE = 15 V, IC = 30 A 2.0 VGE = 15 V, IC = 30 A, TJ = 175 °C 2.4 5 Unit 6 2.4 V 7 V VGE = 0 V, VCE = 600 V 25 µA VCE = 0 V, VGE = ±20 V ±250 nA Table 4. Dynamic characteristics Symbol DS8709 - Rev 4 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V VCC = 400 V, IC = 30 A, VGE = 0 to 15 V (see Figure 20. Gate charge test circuit) Min. Typ. Max. Unit - 3600 - pF - 130 - pF - 65 - pF - 105 - nC - 30 - nC - 35 - nC page 3/14 STGP30H60DF Electrical characteristics Table 5. Switching characteristics (inductive load) Symbol td(on) Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VCE = 400 V, IC = 30 A, 50 - ns Current rise time RG = 10 Ω, VGE = 15 V 15 - ns Turn-on current slope (see Figure 19. Test circuit for inductive load switching) 1600 - A/µs Turn-on delay time VCE = 400 V, IC = 30 A, 47 - ns Current rise time RG = 10 Ω, VGE = 15 V, TJ = 175 °C 17 - ns Turn-on current slope (see Figure 19. Test circuit for inductive load switching) 1400 - A/μs tr(Voff) Off voltage rise time VCE = 400 V, IC = 30 A, 20 - ns td(off) Turn-off delay time RG = 10 Ω, VGE = 15 V 160 - ns Current fall time (see Figure 19. Test circuit for inductive load switching) 60 - ns tr(Voff) Off voltage rise time VCE = 400 V, IC = 30 A, 22 - ns td(off) Turn-off delay time RG = 10 Ω, VGE = 15 V, TJ = 175 °C 146 - ns Current fall time (see Figure 19. Test circuit for inductive load switching) 88 - ns Short circuit withstand time VCC ≤ 360 V, VGE = 15 V 3 6 - µs Min. Typ. Max. Unit tr (di/dt)on td(on) tr (di/dt)on tf tf tsc Table 6. Switching energy (inductive load) Symbol Parameter Test conditions Eon(1) Turn-on switching losses VCE = 400 V, IC = 30 A, - 0.35 - mJ Eoff(2) Turn-off switching losses RG = 10 Ω, VGE = 15 V - 0.40 - mJ Total switching losses (see Figure 19. Test circuit for inductive load switching) - 0.75 - mJ Turn-on switching losses VCE = 400 V, IC = 30 A, - 0.84 - mJ Turn-off switching losses RG = 10 Ω, VGE = 15 V, TJ = 175 °C - 0.61 - mJ Total switching losses (see Figure 19. Test circuit for inductive load switching) - 1.45 - mJ Ets Eon(1) (2) Eoff Ets 1. Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. DS8709 - Rev 4 page 4/14 STGP30H60DF Electrical characteristics Table 7. Collector-emitter diode Symbol DS8709 - Rev 4 Parameter VF Forward on-voltage trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current Test conditions Min. Typ. Max. IF = 30 A - 2.0 2.3 IF = 30 A, TJ = 175 °C - 1.5 - 110 ns - 136 nC - 2.5 A - 190 ns - 506 nC - 5.3 A Vr = 400 V, IF = 30 A, diF/dt = 100 A/μs Vr = 400 V, IF = 30 A, diF/dt = 100 A/μs, TJ = 175 °C Unit V page 5/14 STGP30H60DF Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Output characteristics (TJ = 25 °C) IC (A) 11V 13V 80 AM17361v1 IC (A) AM17360v1 VGE=15V 100 Figure 2. Output characteristics (TJ = 175 °C) VGE=15V 100 11V 80 13V 60 60 40 40 9V 9V 20 0 0 1 2 3 4 AM17362v1 100 TJ=-40°C TJ=175°C VCE=5V 7V 0 0 VCE(V) Figure 3. Transfer characteristics IC (A) 20 1 2 4 3 VCE(V) Figure 4. Normalized VGE(th) vs junction temperature AM17369v1 VGE(th) norm 1.0 TJ=25°C 80 0.9 60 0.8 40 0.7 20 0 7 8 9 10 11 VGE(V) Figure 5. Power dissipation vs case temperature AM17364v1 PTOT (W) 240 0.6 -50 0 100 50 150 TJ(°C) Figure 6. Collector current vs switching frequency IC (A) 60 200 50 160 120 40 80 30 40 rectangular current shape, (duty cycle=0.5, Vcc= 400V Rg=10ohm,Vge=0/15V, Tj=175 °C) 0 0 DS8709 - Rev 4 25 50 75 100 125 150 TCASE(°C) 20 1 10 f(kHz) page 6/14 STGP30H60DF Electrical characteristics (curves) Figure 7. VCE(sat) vs junction temperature AM17366v1 VCE(sat) (V) Figure 8. VCE(sat) vs collector current AM17367v1 VCE(sat) (V) VGE=15V VGE=15V 3.2 3.0 2.8 3.0 2.8 2.6 2.4 2.2 2.0 1.8 IC=60A 2.6 2.4 2.2 IC=30A 2.0 1.8 1.4 1.2 -50 TJ=25°C 1.6 1.4 IC=15A 1.6 TJ=175°C 0 50 100 150 TJ(°C) TJ=-40°C 1.2 1. 10 20 Figure 9. Forward bias safe operating area IC (A) AM17370v1 40 30 50 IC(A) Figure 10. Thermal impedance ZthTO2T_B K δ=0.5 lim it 0.2 1µs 0.1 VC E(s at) 100 0.05 -1 10 0.02 10 100µs Single pulse (single pulse TC=25°C, TJ15V TJ