STGB30H60DLFB

STGB30H60DLFB, STGW30H60DLFB Trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data Features • Designed for soft commutation only • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 3 1 2 D2PAK 3 1 • VCE(sat) = 1.55 V (typ.) @ IC = 30 A • Low VF soft recovery co-packaged diode • Tight parameters distribution TO-247 • Safe paralleling • Low thermal resistance Figure 1. Internal schematic diagram • Lead free package Applications C (2, TAB) • Microwave oven • Resonant converters Description G (1) These devices are IGBTs developed using an advanced proprietary trench gate and field stop structure. The device is part of the new "HB" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. E (3) Table 1. Device summary Order code Marking Package Packaging STGB30H60DLFB GB30H60DLFB D2PAK Tape and reel STGW30H60DLFB GW30H60DLFB TO-247 Tube July 2014 This is information on a product in full production. DocID026409 Rev 2 1/20 www.st.com 20 Contents STGB30H60DLFB, STGW30H60DLFB Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1 D2PAK, STGB30H60DLFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.2 TO-247, STGW30H60DLFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 2/20 DocID026409 Rev 2 STGB30H60DLFB, STGW30H60DLFB 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0) 600 V IC Continuous collector current at TC = 25 °C 60 A IC Continuous collector current at TC = 100 °C 30 A Pulsed collector current 120 A Continuous forward current TC = 25 °C 60 A VCES ICP(1) IF Parameter Continuous forward current TC = 25 °C 30 A IFP(1) Pulsed forward current 120 A VGE Gate-emitter voltage ±20 V PTOT Total dissipation at TC = 25 °C 260 W TSTG Storage temperature range - 55 to 150 °C Operating junction temperature - 55 to 175 °C TJ 1. Pulse width limited by maximum junction temperature. Table 3. Thermal data Value Symbol RthJC RthJA Parameter D2PAK Unit TO-247 Thermal resistance junction-case IGBT 0.58 °C/W Thermal resistance junction-case diode 2.08 °C/W Thermal resistance junction-ambient DocID026409 Rev 2 62.5 50 °C/W 3/20 Electrical characteristics 2 STGB30H60DLFB, STGW30H60DLFB Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. VF IF = 30 A TJ = 125 °C 1.2 IF = 30 A TJ = 175 °C 1.05 VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) V 1.75 1.4 Gate threshold voltage 2 1.65 IF = 30 A VGE(th) Unit V 1.55 VGE = 15 V, IC = 30 A Collector-emitter saturation TJ = 125 °C voltage VGE = 15 V, IC = 30 A TJ = 175 °C Forward on-voltage Max. 600 VGE = 15 V, IC = 30 A VCE(sat) Typ. 5 6 1.7 V 7 V VCE = 600 V 25 µA VGE = ± 20 V 250 nA Table 5. Dynamic characteristics Symbol 4/20 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 520 V, IC = 30 A, VGE = 15 V, see Figure 26 Qge Gate-emitter charge Qgc Gate-collector charge DocID026409 Rev 2 Min. Typ. Max. Unit - 3659 - pF - 101 - pF - 76 - pF - 149 - nC - 25 - nC - 62 - nC STGB30H60DLFB, STGW30H60DLFB Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol td(off) tf Parameter Test conditions Turn-off delay time Current fall time Eoff(1) Turn-off switching losses td(off) Turn-off delay time tf Eoff(1) Current fall time Turn-off switching losses VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V, see Figure 25 VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C, see Figure 25 Min. Typ. Max. Unit 146 - ns - 23 - ns - 293 - µJ - 158 - ns - 65 - ns - 572 - µJ Unit 1. Turn-off losses include also the tail of the collector current. Table 7. IGBT switching characteristics (capacitive load) Symbol Parameter Test conditions VCC = 320 V, VGE = 150 V, RG =20 Ω, IC = 30 A, L = 100 µH, Csnub = 20 nF (see Figure 25) Eoff(1) Turn-off switching losses VCC = 320 V, VGE = 150 V, RG =20 Ω, IC = 30 A, L = 100 µH, Csnub = 20 nF, TJ = 175 °C (see Figure 25) Min. Typ. Max. - 150 - µJ - 300 - 1. Turn-off losses include also the tail of the collector current. DocID026409 Rev 2 5/20 Electrical characteristics 2.1 STGB30H60DLFB, STGW30H60DLFB Electrical characteristics (curve) Figure 2. Power dissipation vs. case temperature GIPG280120141353FSR Ptot (W) Figure 3. Collector current vs. case temperature GIPG280120141346FSR IC (A) 60 250 200 40 150 100 20 50 VGE ≥ 15V, TJ ≤ 175 °C 0 0 25 50 VGE ≥ 15V, TJ ≤ 175 °C 0 0 75 100 125 150 175 TC(°C) Figure 4. Output characteristics (TJ = 25°C) GIPG280120141156FSR IC (A) VGE =15 V 80 13V 40 40 20 20 4 0 0 VCE(V) Figure 6. VCE(sat) vs. junction temperature GIPG280120141440FSR VGE= 15V 2.2 11V 9V 80 60 VCE(sat) (V) GIPG280120141206FSR IC (A) 60 3 TC(°C) Figure 5. Output characteristics (TJ = 175°C) VGE =15 V 9V 2 75 100 125 150 100 11V 1 50 13V 100 0 0 25 7V 1 2 3 4 VCE(V) Figure 7. VCE(sat) vs. collector current GIPG280120141446FSR VCE(sat) (V) VGE= 15V 2.2 IC= 60A 2.0 2.0 1.8 1.8 TJ= 175°C TJ= 25°C IC= 30A 1.6 1.4 IC= 15A 1.2 -50 6/20 0 50 100 150 TJ(°C) 1.6 TJ= -40°C 1.4 1.2 0 DocID026409 Rev 2 20 30 40 50 IC(A) STGB30H60DLFB, STGW30H60DLFB Electrical characteristics Figure 8. Collector current vs. switching frequency GIPG260620141544FSR Ic [A] Figure 9. Forward bias safe operating area GIPG280120141450FSR IC (A) Vce(sat) limit 60 Tc=80°C 100 50 Tc=100 °C 40 10 μs 10 100 μs 30 1 ms 20 1 rectangular current shape, (duty cycle=0.5, VCC = 400V, RG=10 Ω, VGE = 0/15 V, TJ =175°C) 10 (single pulse TC= 25°C, TJ ≤ 175 °C; VGE=15V) 0 1 f [kHz] 10 Figure 10. Transfer characteristics IC (A) GIPG280120141330FSR 25 °C 175 °C 100 0.1 1 10 100 VCE(V) Figure 11. Diode VF vs. forward current GIPG260620141554FSR VF (V) VCE =10 V TJ= -40°C 2.0 80 1.6 TJ= 25°C 60 1.2 40 TJ= 175°C 0.8 20 0 7 9 13 11 VGE(V) Figure 12. Normalized VGE(th) vs junction temperature AM16060v1 VGE(th) (norm) 0.4 10 20 30 40 50 IF(A) Figure 13. Normalized V(BR)CES vs. junction temperature AM16059v1 V(BR)CES (norm) VCE= VGE IC= 1mA 1.1 IC= 2mA 1.0 0.9 1.0 0.8 0.7 0.6 -50 0 50 100 150 TJ(°C) DocID026409 Rev 2 0.9 -50 0 50 100 150 TJ(°C) 7/20 Electrical characteristics STGB30H60DLFB, STGW30H60DLFB Figure 14. Capacitance variation Figure 15. Gate charge vs. gate-emitter voltage GIPG280120141707FSR C(pF) Cies VGE (V) 16 GIPG280120141455FSR VCC= 520V, IC= 30A IG= 1mA 14 12 1000 10 8 6 100 4 Coes Cres 10 0.1 1 10 Figure 16. Switching loss vs collector current 1200 GIPG280120141606FSR VCC= 400V, VGE= 15V Rg= 10Ω, TJ= 175°C 1000 0 0 VCE(V) 100 E (μJ) 2 40 80 120 160 Qg(nC) Figure 17. Switching loss vs gate resistance GIPG280120141536FSR E (μJ) 1000 EOFF VCC= 400V, VGE= 15V IC= 30A, TJ= 175 °C EOFF 900 800 800 600 700 400 600 200 0 0 20 40 60 Figure 18. Switching loss vs temperature GIPG280120141532FSR E (μJ) 500 0 IC(A) 20 30 40 RG(Ω) Figure 19. Switching loss vs collector-emitter voltage GIPG280120141610FSR E (μJ) VCC= 400V, VGE= 15V Rg= 10Ω, IC= 30A 800 EOFF 600 10 TJ= 175°C, VGE= 15V Rg= 10Ω, IC= 30A EOFF 600 400 400 200 0 20 8/20 200 40 60 80 100 120 140 160 TJ(°C) DocID026409 Rev 2 0 150 250 350 450 VCE(V) STGB30H60DLFB, STGW30H60DLFB Electrical characteristics Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance t (ns) GIPG300620141033FSR TJ= 175°C, VGE= 15V, RG= 10Ω, VCC= 400V t (ns) GIPG300620141039FSR TJ= 175°C, VGE= 15V, IC= 30A, VCC= 400V tdoff tdoff 100 100 tf 10 0 10 30 20 40 50 tf IC(A) 10 0 10 20 30 40 RG(Ω) Figure 22. Switching-off losses vs. capacitive load GIPG300620141047FSR Eoff (μJ) Lsnub= 100μH, VGE= 15V, IC= 30A, VCC= 320V 300 250 TJ= 175°C 200 150 TJ= 25°C 100 50 0 20 40 60 80 C(nF) DocID026409 Rev 2 9/20 Electrical characteristics STGB30H60DLFB, STGW30H60DLFB Figure 23. Thermal impedance for IGBT ZthTO2T_B K δ=0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c δ=tp/t 0.01 Single pulse tp t -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 Figure 24. Thermal impedance for diode 10/20 DocID026409 Rev 2 tp (s) STGB30H60DLFB, STGW30H60DLFB 3 Test circuits Test circuits Figure 25. Test circuit for inductive load switching Figure 26. Gate charge test circuit k k k k k k AM01504v1 Figure 27. Switching waveform AM01505v1 Figure 28. Diode reverse recovery waveform VG IF trr 90% VCE Qrr di/dt 90% 10% ts tf 10% Tr(Voff) t Tcross 90% IRRM IRRM IC 10% Td(off) Td(on) Tr(Ion) Ton VRRM Tf Toff dv/dt AM01506v1 DocID026409 Rev 2 AM01507v1 11/20 Package mechanical data 4 STGB30H60DLFB, STGW30H60DLFB Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 D2PAK, STGB30H60DLFB Figure 29. D²PAK (TO-263) drawing 0079457_U 12/20 DocID026409 Rev 2 STGB30H60DLFB, STGW30H60DLFB Package mechanical data Table 8. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0° 8° DocID026409 Rev 2 13/20 Package mechanical data STGB30H60DLFB, STGW30H60DLFB Figure 30. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 a. All dimension are in millimeters. 14/20 DocID026409 Rev 2 Footprint STGB30H60DLFB, STGW30H60DLFB 4.2 Package mechanical data TO-247, STGW30H60DLFB Figure 31. TO-247 drawing 0075325_G DocID026409 Rev 2 15/20 Package mechanical data STGB30H60DLFB, STGW30H60DLFB Table 9. TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 16/20 Max. 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID026409 Rev 2 5.70 STGB30H60DLFB, STGW30H60DLFB 5 Packaging mechanical data Packaging mechanical data Figure 32. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DocID026409 Rev 2 17/20 Packaging mechanical data STGB30H60DLFB, STGW30H60DLFB Figure 33. Reel T REEL DIMENSIONS 40mm min. Access hole At slot location B D C N A Full radius G measured at hub Tape slot in core for tape start 25 mm min. width AM08851v2 Table 10. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. 18/20 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID026409 Rev 2 Min. Max. 330 13.2 26.4 30.4 STGB30H60DLFB, STGW30H60DLFB 6 Revision history Revision history Table 11. Document revision history Date Revision Changes 04-Jul-2014 1 Initial release. 23-Jul-2014 2 Document status promoted from preliminary data to production data DocID026409 Rev 2 19/20 STGB30H60DLFB, STGW30H60DLFB IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved 20/20 DocID026409 Rev 2