STGB30H60DLLFBAG

STGB30H60DLLFBAG Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data Features           TAB 2 3 1 D²PAK AEC-Q101 qualified Maximum junction temperature: TJ = 175 °C Logic level gate drive High speed switching series Minimized tail current VCE(sat) = 1.7 V (typ.) @ IC = 30 A Low VF soft recovery co-packaged diode Tight parameters distribution Safer paralleling Low thermal resistance Applications Figure 1: Internal schematic diagram  Ignition Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packaging STGB30H60DLLFBAG GB30H60DLLFB D²PAK Tape and reel October 2016 DocID029886 Rev 1 This is information on a product in full production. 1/17 www.st.com Contents STGB30H60DLLFBAG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 5 3 Test circuits ................................................................................... 10 4 Package information ..................................................................... 11 5 2/17 4.1 D²PAK package information ............................................................ 11 4.2 D²PAK packing information ............................................................. 14 Revision history ............................................................................ 16 DocID029886 Rev 1 STGB30H60DLLFBAG 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol VCES Parameter Value Unit Collector-emitter voltage (VGE = 0) 600 V IC Continuous collector current at TC = 25 °C 60 A IC Continuous collector current at TC = 100 °C 30 A ICP(1) Pulsed collector current 120 A VGE Gate-emitter voltage ±20 V Continuous forward current at TC = 25 °C 60 Continuous forward current at TC = 100 °C 30 IFP(1) Pulsed forward current 120 PTOT Total dissipation at TC = 25 °C 260 W TSTG Storage temperature range - 55 to 150 °C Operating junction temperature range - 55 to 175 °C IF TJ A A Notes: (1)Pulse width limited by maximum junction temperature. Table 3: Thermal data Symbol RthJC RthJA Parameter Value Thermal resistance junction-case IGBT 0.58 Thermal resistance junction-case diode 2.08 Thermal resistance junction-ambient 62.5 DocID029886 Rev 1 Unit °C/W °C/W 3/17 Electrical characteristics 2 STGB30H60DLLFBAG Electrical characteristics TC = 25 °C unless otherwise specified Table 4: Static characteristics Symbol V(BR)CES VCE(sat) VF Parameter Test conditions Collector-emitter breakdown voltage Collector-emitter saturation voltage Forward on-voltage VGE = 0 V, IC = 1 mA Min. Typ. 600 1.7 VGE = 5 V, IC = 30 A, TJ = 125 °C 1.9 VGE = 5 V, IC = 30 A, TJ = 175 °C 2 IF = 30 A 1.4 IF = 30 A, TJ = 125 °C 1.35 IF = 30 A, TJ = 175 °C 1.25 1.8 Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current Unit V VGE = 5 V, IC = 30 A VGE(th) Max. 2.15 V 1.7 V 2.5 V VGE = 0 V, VCE = 600 V 25 µA VCE = 0 V, VGE = ± 10 V ±250 µA Unit Table 5: Dynamic characteristics Symbol Cies Parameter Test conditions Min. Typ. Max. - 5000 - - 120 - - 75 - - 110 - - 16 - - 42 - Typ. Max. Unit VCE = 400 V, IC = 30 A, VGE = 5 V, RG = 10 Ω (see Figure 25: " Test circuit for inductive load switching" ) 320 - ns 20 - ns 600 - µJ VCE = 400 V, IC = 30 A, VGE = 5 V, RG = 10 Ω TJ = 175 °C (see Figure 25: " Test circuit for inductive load switching" ) 330 - ns 40 - ns 880 - µJ Input capacitance VCE= 25 V, f = 1 MHz, VGE = 0 V Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge VCC = 520 V, IC = 30 A, VGE = 5 V (see Figure 26: " Gate charge test circuit") pF nC Table 6: IGBT switching characteristics (inductive load) Symbol td(off) tf Parameter Test conditions Turn-off delay time Current fall time Eoff(1) Turn-off switching energy td(off) Turn-off delay time tf Eoff(1) Current fall time Turn-off switching energy Notes: (1)Including 4/17 the tail of the collector current. DocID029886 Rev 1 Min. STGB30H60DLLFBAG 2.1 Electrical characteristics Electrical characteristics (curves) Figure 2: Power dissipation vs. case temperature Figure 3: Collector current vs. case temperature Figure 4: Output characteristics (TJ = 25 °C) Figure 5: Output characteristics (TJ = 175 °C) Figure 6: VCE(sat) vs. junction temperature Figure 7: VCE(sat) vs. collector current DocID029886 Rev 1 5/17 Electrical characteristics STGB30H60DLLFBAG Figure 8: Collector current vs. switching frequency Figure 9: Forward bias safe operating area GIPG280120141450FSR IC (A) Vce(sat) limit 100 10 µs 10 100 µs 1 ms 1 (single pulse TC= 25°C, TJ ≤ 175°C; VGE=15V) 0.1 1 Figure 10: Transfer characteristics Figure 12: Normalized VGE(th) vs. temperature 6/17 10 100 VCE(V) Figure 11: Diode forward on voltage Figure 13: Normalized V(BR)CES vs. temperature DocID029886 Rev 1 STGB30H60DLLFBAG Electrical characteristics Figure 14: Diode forward on voltage vs. temperature Figure 15: Capacitance variations Figure 16: Gate charge vs. gate-emitter voltage Figure 18: Switching energy vs. gate resistance Figure 17: Switching energy vs. collector current Figure 19: Switching energy vs. temperature DocID029886 Rev 1 7/17 Electrical characteristics STGB30H60DLLFBAG Figure 20: Switching energy vs. VCE Figure 21: Switching times vs. collector current Figure 22: Switching times vs. gate resistance 8/17 DocID029886 Rev 1 STGB30H60DLLFBAG Electrical characteristics Figure 23: Thermal impedance for IGBT ZthTO2T_B K δ=0.5 0.2 0.1 10 0.05 -1 0.02 Zth=k Rthj-c δ=tp/t 0.01 Single pulse tp t -2 10 -5 10 10 -4 10 -3 10 -2 10 -1 tp (s) Figure 24: Thermal impedance for diode DocID029886 Rev 1 9/17 Test circuits 3 STGB30H60DLLFBAG Test circuits Figure 25: Test circuit for inductive load switching C A Figure 26: Gate charge test circuit A L=100 µH G E B B 3.3 µF C G + RG VCC 1000 µF D.U.T E - AM01504v 1 Figure 27: Switching waveform 10/17 DocID029886 Rev 1 Figure 28: Diode reverse recovery waveform STGB30H60DLLFBAG 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 D²PAK package information Figure 29: D²PAK (TO-263) type A package outline 0079457_A_rev22 DocID029886 Rev 1 11/17 Package information STGB30H60DLLFBAG Table 7: D²PAK (TO-263) type A package mechanical data mm Dim. Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 12/17 Typ. 0.4 0° DocID029886 Rev 1 8° STGB30H60DLLFBAG Package information Figure 30: D²PAK (TO-263) recommended footprint (dimensions are in mm) DocID029886 Rev 1 13/17 Package information 4.2 STGB30H60DLLFBAG D²PAK packing information Figure 31: Tape outline 14/17 DocID029886 Rev 1 STGB30H60DLLFBAG Package information Figure 32: Reel outline Table 8: D²PAK tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID029886 Rev 1 Min. Max. 330 13.2 26.4 30.4 15/17 Revision history 5 STGB30H60DLLFBAG Revision history Table 9: Document revision history 16/17 Date Revision 18-Oct-2016 1 DocID029886 Rev 1 Changes First release. STGB30H60DLLFBAG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID029886 Rev 1 17/17