STGB30M65DF2
Trench gate field-stop IGBT, M series 650 V, 30 A
low-loss in a D2PAK package
Datasheet - production data
Features
TAB
2
3
1
6 µs of short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 30 A
Tight parameters distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
D²PAK
Figure 1: Internal schematic diagram
Motor control
UPS
PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Table 1: Device summary
Order code
Marking
Package
Packaging
STGB30M65DF2
G30M65DF2
D²PAK
Tape and reel
April 2017
DocID027431 Rev 3
This is information on a product in full production.
1/18
www.st.com
Contents
STGB30M65DF2
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ................................................................................... 11
4
Package information ..................................................................... 12
5
2/18
4.1
D²PAK (TO-263) type A package information ................................. 12
4.2
D2PAK (TO-263) type A packing information .................................. 15
Revision history ............................................................................ 17
DocID027431 Rev 3
STGB30M65DF2
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
VCES
Parameter
Value
Unit
Collector-emitter voltage (VGE = 0 V)
650
V
IC
Continuous collector current at TC = 25 °C
60
A
IC
Continuous collector current at TC = 100 °C
30
A
ICP(1)
Pulsed collector current
120
A
VGE
Gate-emitter voltage
±20
V
IF
Continuous forward current at TC = 25 °C
60
A
IF
Continuous forward current at TC = 100 °C
30
A
IFP(1)
Pulsed forward current
120
A
PTOT
Total dissipation at TC = 25 °C
258
W
TSTG
Storage temperature range
-55 to 150
°C
Operating junction temperature range
-55 to 175
°C
Value
Unit
TJ
Notes:
(1)Pulse
width limited by maximum junction temperature.
Table 3: Thermal data
Symbol
Parameter
RthJC
Thermal resistance junction-case IGBT
0.58
°C/W
RthJC
Thermal resistance junction-case diode
1.47
°C/W
RthJA
Thermal resistance junction-ambient
62.5
°C/W
DocID027431 Rev 3
3/18
Electrical characteristics
2
STGB30M65DF2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4: Static characteristics
Symbol
V(BR)CES
VCE(sat)
VF
Parameter
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
Forward on-voltage
Test conditions
Min.
VGE = 0 V, IC = 250 µA
650
Typ.
1.55
VGE = 15 V, IC = 30 A,
TJ = 125 °C
1.95
VGE = 15 V, IC = 30 A,
TJ = 175 °C
2.1
IF = 30 A
1.85
IF = 30 A, TJ = 125 °C
1.6
IF = 30 A, TJ = 175 °C
1.5
Gate threshold voltage
VCE = VGE, IC = 500 µA
ICES
Collector cut-off current
IGES
Gate-emitter leakage current
5
Unit
V
VGE = 15 V, IC = 30 A
VGE(th)
Max.
6
2.0
V
2.65
V
7
V
VGE = 0 V, VCE = 650 V
25
µA
VCE = 0 V, VGE = ± 20 V
±250
µA
Unit
Table 5: Dynamic characteristics
Symbol
Cies
4/18
Parameter
Test conditions
Input capacitance
VCE = 25 V, f = 1 MHz,
VGE = 0 V
Coes
Output capacitance
Cres
Reverse transfer capacitance
Qg
Total gate charge
Qge
Gate-emitter charge
Qgc
Gate-collector charge
VCC = 520 V, IC = 30 A,
VGE = 0 to 15 V
(see Figure 30: " Gate
charge test circuit")
DocID027431 Rev 3
Min.
Typ.
Max.
-
2490
-
-
143
-
-
46
-
-
80
-
-
18
-
-
32
-
pF
nC
STGB30M65DF2
Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Parameter
Test conditions
Typ.
Max.
Unit
Turn-on delay time
31.6
-
ns
Current rise time
13.4
-
ns
1791
-
A/µs
115
-
ns
110
-
ns
0.3
-
mJ
Turn-on current slope
Turn-off-delay time
Current fall time
Min.
VCE = 400 V, IC = 30 A,
VGE = 15 V, RG = 10 Ω
(see Figure 29: " Test circuit
for inductive load switching" )
Eon(1)
Turn-on switching energy
(2)
Turn-off switching energy
0.96
-
mJ
Total switching energy
1.26
-
mJ
Turn-on delay time
30
-
ns
Current rise time
17
-
ns
1435
-
A/µs
116
-
ns
194
-
ns
0.67
-
mJ
Eoff
Ets
td(on)
tr
(di/dt)on
td(off)
tf
Turn-on current slope
Turn-off-delay time
Current fall time
VCE = 400 V, IC = 30 A,
VGE = 15 V, RG = 10 Ω
TJ = 175 °C
(see Figure 29: " Test circuit
for inductive load switching" )
Eon(1)
Turn-on switching energy
(2)
Turn-off switching energy
1.36
-
mJ
Total switching energy
2.03
-
mJ
Eoff
Ets
tsc
Short-circuit withstand time
VCC ≤ 400 V, VGE = 13 V,
TJstart = 150 °C
10
-
VCC ≤ 400 V, VGE = 15 V,
TJstart = 150 °C
6
-
µs
Notes:
(1)Including
the reverse recovery of the diode.
(2)Including
the tail of the collector current.
Table 7: Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
IF = 30 A, VR = 400 V,
VGE = 15 V, di/dt = 1000 A/µs
(see Figure 29: " Test circuit
for inductive load switching")
IF = 30 A, VR = 400 V,
VGE = 15 V, di/dt = 1000 A/µs,
TJ = 175 °C
(see Figure 29: " Test circuit
for inductive load switching")
DocID027431 Rev 3
Min.
Typ.
Max.
Unit
-
140
-
ns
-
880
-
nC
-
17
-
A
-
650
-
A/µs
-
115
-
µJ
-
244
-
ns
-
2743
-
nC
-
25
-
A
-
220
-
A/µs
-
320
-
µJ
5/18
Electrical characteristics
2.1
STGB30M65DF2
Electrical characteristics (curves)
Figure 2: Power dissipation vs. case temperature
GIPD100420150947FSR
Ptot
(W)
Figure 3: Collector current vs. case temperature
GIPD100420150959FSR
IC
(A)
60
250
50
200
40
150
30
100
50
20
10
VGE ≥ 15V, TJ ≤ 175 °C
0
-50
0
50
100
150
GIPD100420151008FSR
IC
(A)
VGE=15V
0
-50
TC(°C)
Figure 4: Output characteristics (TJ = 25 °C)
VGE ≥ 15V, TJ ≤ 175 °C
0
50
100
150
TC(°C)
Figure 5: Output characteristics (TJ = 175 °C)
GIPD100420151025FSR
IC
(A)
VGE=15V
13V
100
100
13V
11V
80
80
11V
60
60
40
9V
20
40
9V
20
7V
0
0
1
2
3
4
5
VCE(V)
Figure 6: VCE(sat) vs. junction temperature
GIPD281020131418FSR
VCE(sat)
(V)
0
0
IC= 60A
2
3
4
VGE= 15V
TJ= 175°C
4
TJ= 25°C
IC= 30A
3
2.2
1.8
2
IC= 15A
1.4
6/18
VCE(V)
GIPD281020131116FSR
5
2.6
1
-50
5
Figure 7: VCE(sat) vs. collector current
VCE(sat)
(V)
VGE= 15V
3
1
TJ= -40°C
1
0
50
100
150
TJ(°C)
DocID027431 Rev 3
0
0
20
40
60
80
100
IC(A)
STGB30M65DF2
Electrical characteristics
Figure 8: Collector current vs. switching frequency
GIPD100420151129FSR
Ic [A]
60
Figure 9: Forward bias safe operating area
GIPD100420151137FSR
IC
(A)
Tc=80°C
100
50
1 µs
Tc=100 °C
40
10 µs
10
30
20
Single pulse
Tc= 25°C, TJ ≤ 175°C
VGE= 15V
rectangular current shape,
(duty cycle=0.5, VCC = 400V, RG=10 Ω,
VGE = 0/15 V, TJ =175°C)
10
1
1 ms
1
f [kHz]
10
Figure 10: Transfer characteristics
VCE= 5V
1
10
100
VCE(V)
Figure 11: Diode VF vs. forward current
GIPD100420151152FSR
IC
(A)
100
100 µs
GIPD100420151209FSR
VF (V)
3
TJ= 25 °C
TJ= -40°C
2.5
80
TJ= 175°C
2
60
1.5
40
20
0
5
0.5
6
7
8
9
10
11
GIPD100420151232FSR
VGE(th)
(norm)
1.0
0.8
0.95
150
80
100
IF(A)
GIPD100420151240FSR
1.1
0.9
100
60
V(BR)ces
(norm)
1.05
50
40
Figure 13: Normalized V(BR)CES vs. junction
temperature
1.0
0
20
IC= 250µA
IC= 500µA
VCE= VGE
1.1
0
0
VGE(V)
Figure 12: Normalized VGE(th) vs. junction
temperature
0.7
-50
TJ= 25°C
1
TJ= 175 °C
TJ(°C)
0.9
-50
DocID027431 Rev 3
0
50
100
150
TJ(°C)
7/18
Electrical characteristics
STGB30M65DF2
Figure 14: Capacitance variations
Figure 15: Gate charge vs. gate-emitter voltage
GIPD100420151249FSR
C
(pF)
GIPD100420151257FSR
VGE
(V)
f= 1MHz
IC= 30A
IG= 1mA
VCC= 520V
16
Cies
1000
12
8
100
10
0.1
1
10
100
Coes
4
Cres
VCE(V)
0
Figure 16: Switching energy vs. collector current
E
(mJ)
GIPD100420151322FSR
VCC = 400V, VGE = 15V,
RG = 10Ω, TJ = 175°C
0
40
60
80
Qg(nC)
Figure 17: Switching energy vs. gate resistance
GIPD100420151328FSR
E
(mJ)
4
VCC = 400 V, VGE = 15 V,
IC = 30 A, TJ = 175 °C
4
3
20
3
Etot
Etot
Eoff
2
2
Eoff
1
0
0
1
Eon
10
20
30
40
Eon
50
Figure 18: Switching energy vs. temperature
E
(mJ)
0
0
60 IC(A)
GIPD100420151336FSR
VCC= 400V, VGE= 15V,
RG= 10Ω, IC= 30A
40
60
80
100 RG(Ω)
Figure 19: Switching energy vs. collector emitter
voltage
E
(mJ)
2.5
2
1.5
20
GIPD100420151340FSR
TJ= 175°C, VGE= 15V,
RG= 10Ω, IC= 30A
2
Etot
Etot
Eoff
Eoff
1.5
1
1
0.5
Eon
0.5
Eon
0
0
8/18
50
100
150
TJ(°C)
DocID027431 Rev 3
0
150
250
350
450
VCE(V)
STGB30M65DF2
Electrical characteristics
Figure 20: Short-circuit time and current vs. VGE
tsc
(µs)
Figure 21: Switching times vs. collector current
GIPD100420151351FSR
ISC(A)
VCC ≤ 400V, TJ ≤ 150°C
ISC
20
t
(ns)
GIPD100420151403FSR
TJ= 175°C, VGE= 15V,
RG= 10Ω, VCC= 400V
150
tf
tSC
100
td(off)
120
15
td(on)
90
10
tr
10
60
5
0
9
10
11
12
13
14
15
1
0
30
VGE(V)
Figure 22: Switching times vs. gate resistance
Irm
(A)
TJ= 175°C, VGE= 15V,
IC= 30A, VCC= 400V
40
tf
100
20
30
40
50
IC(A)
Figure 23: Reverse recovery current vs. diode
current slope
GIPD100420151412FSR
t
(ns)
10
GIPD100420151417FSR
IF = 30A, VCC = 400V
VGE = 15V
35
30
td(off)
TJ =175°C
25
td(on)
20
tr
10
0
20
40
60
80
15
200
RG(Ω)
Figure 24: Reverse recovery time vs. diode current
slope
IF = 30A, VCC = 400V,
VGE = 15V
280
1000
1400
1800
di/dt(A/µs)
Figure 25: Reverse recovery charge vs. diode
current slope
GIPD100420151434FSR
trr
(ns)
600
Qrr
(µC)
GIPD100420151442FSR
IF = 30A, VCC = 400V,
VGE = 15V
2.9
260
2.8
240
TJ =175°C
2.7
220
2.6
200
180
200
600
1000
1400
1800 di/dt(A/µs)
DocID027431 Rev 3
2.5
200
TJ =175°C
600
1000
1400
1800 di/dt(A/µs)
9/18
Electrical characteristics
STGB30M65DF2
Figure 26: Reverse recovery energy vs. diode current slope
GIPD100420151455FSR
Err
(mJ)
IF = 30A, VCC = 400V,
VGE = 15V
0.38
0.34
0.3
TJ =175°C
0.26
0.22
0.18
200
600
1000
1400
1800 di/dt(A/µs)
Figure 27: Thermal impedance for IGBT
ZthTO2T_B
K
δ=0.5
0.2
0.1
10
0.05
-1
0.02
Zth=k Rthj-c
δ=tp/t
0.01
Single pulse
tp
t
-2
10 -5
10
10
-4
10
-3
10
-2
10
-1
tp (s)
Figure 28: Thermal impedance for diode
10/18
DocID027431 Rev 3
STGB30M65DF2
3
Test circuits
Test circuits
Figure 29: Test circuit for inductive load
switching
C
A
Figure 30: Gate charge test circuit
A
L=100 µH
G
E
B
B
3.3
µF
C
G
+
RG
VCC
1000
µF
D.U.T
E
-
AM01504v 1
Figure 31: Switching waveform
Figure 32: Diode reverse recovery waveform
di/dt
Qrr
trr
IF
ts
tf
t
IRRM
10%
IRRM
VRRM
dv/dt
AM01507v1
DocID027431 Rev 3
11/18
Package information
4
STGB30M65DF2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1
D²PAK (TO-263) type A package information
Figure 33: D²PAK (TO-263) type A package outline
12/18
DocID027431 Rev 3
STGB30M65DF2
Package information
Table 8: D²PAK (TO-263) type A package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10.00
E1
8.50
8.70
8.90
E2
6.85
7.05
7.25
e
10.40
2.54
e1
4.88
5.28
H
15.00
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
0.40
0°
DocID027431 Rev 3
8°
13/18
Package information
STGB30M65DF2
Figure 34: D²PAK (TO-263) type A recommended footprint (dimensions are in mm)
14/18
DocID027431 Rev 3
STGB30M65DF2
4.2
Package information
2
D PAK (TO-263) type A packing information
Figure 35: D2PAK type A tape outline
DocID027431 Rev 3
15/18
Package information
STGB30M65DF2
Figure 36: D2PAK type A reel outline
Table 9: D²PAK type A tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
16/18
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID027431 Rev 3
Min.
Max.
330
13.2
26.4
30.4
STGB30M65DF2
5
Revision history
Revision history
Table 10: Document revision history
Date
Revision
10-Feb-2015
1
First release.
2
Document status promoted from preliminary to production data.
Updated Section 2: "Electrical characteristics"
Added Section 2.1: "1.1 Electrical characteristics (curve)"
3
Updated document title.
Updated Table 4: "Static characteristics", Table 6: "IGBT switching
characteristics (inductive load)" and Table 7: "Diode switching
characteristics (inductive load)".
Updated Figure 13: "Normalized V(BR)CES vs. junction temperature ".
Updated Section 4.1: "D²PAK (TO-263) type A package information".
Minor text changes
13-Apr-2015
11-Apr-2017
Changes
DocID027431 Rev 3
17/18
STGB30M65DF2
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18/18
DocID027431 Rev 3