STGB40H65FB

STGB40H65FB Datasheet Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Features TAB 2 1 3 D²PAK • Maximum junction temperature: TJ = 175 °C • • • High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A • • • Tight parameter distribution Safe paralleling Low thermal resistance Applications C(2, TAB) • • G(1) Photovoltaic inverters High frequency converters Description E(3) G1C2TE3 This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGB40H65FB Product summary Order code STGB40H65FB Marking GB40H65FB Package D²PAK Packing Tape and reel DS11724 - Rev 2 - February 2019 For further information contact your local STMicroelectronics sales office. www.st.com STGB40H65FB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 650 V Continuous collector current at TC = 25 °C 80 Continuous collector current at TC = 100 °C 40 Pulsed collector current 160 A VGE Gate-emitter voltage ±20 V PTOT Total power dissipation at TC = 25 °C 283 W TSTG Storage temperature range - 55 to 150 Operating junction temperature range - 55 to 175 VCES IC ICP (1) TJ Parameter A °C 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol DS11724 - Rev 2 Parameter Value RthJC Thermal resistance junction-case 0.53 RthJA Thermal resistance junction-ambient 62.5 Unit °C/W page 2/17 STGB40H65FB Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 3. Static characteristics Symbol V(BR)CES VCE(sat) Parameter Test conditions Collector-emitter breakdown voltage Collector-emitter saturation voltage VGE = 0 V, IC = 2 mA Min. Typ. 650 1.6 VGE = 15 V, IC = 40 A, TJ = 125 °C 1.7 VGE = 15 V, IC = 40 A, TJ = 175 °C 1.8 Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current Unit V VGE = 15 V, IC = 40 A VGE(th) Max. 5 6 2 V 7 V VGE = 0 V, VCE = 650 V 25 µA VCE = 0 V, VGE = ±20 V ±250 nA Table 4. Dynamic characteristics Symbol DS11724 - Rev 2 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge Test conditions VCE= 25 V, f = 1 MHz, VGE = 0 V VCC = 520 V, IC = 40 A, VGE = 0 to 15 V (see Figure 22. Gate charge test circuit) Min. Typ. Max. Unit - 5412 - - 198 - - 107 - - 210 - - 39 - - 82 - pF nC page 3/17 STGB40H65FB Electrical characteristics Table 5. Switching characteristics (inductive load) Symbol td(on) tr Parameter Test conditions Turn-on delay time - 40 - Current rise time - 13 - - 2413 - - 142 - - 27 - (di/dt)on Turn-on current slope td(off) tf Min. Typ. Max. Unit Turn-off-delay time Current fall time VCE = 400 V, IC = 40 A, VGE = 15 V, RG = 5 Ω (see Figure 21. Test circuit for inductive load switching) Eon (1) Turn-on switching energy - 498 - Eoff (2) Turn-off switching energy - 363 - Total switching energy - 861 - Turn-on delay time - 38 - Current rise time - 14 - - 2186 - - 141 - - 61 - Ets td(on) tr (di/dt)on Turn-on current slope td(off) tf Turn-off-delay time Current fall time VCE = 400 V, IC = 40 A, VGE = 15 V, RG = 5 Ω TJ = 175 °C (see Figure 21. Test circuit for inductive load switching) Eon (1) Turn-on switching energy - 1417 - Eoff (2) Turn-off switching energy - 764 - Total switching energy - 2181 - Ets ns A/µs ns µJ ns A/µs ns µJ 1. Including the reverse recovery of the external diode. 2. Including the tail of the collector current. DS11724 - Rev 2 page 4/17 STGB40H65FB STGB40H65FB electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs. case temperature PTOT (W) IGBT230216EWF6GPDT VGE = 15 V, TJ ≤ 175 °C 250 Figure 2. Collector current vs. case temperature IC (A) IGBT230216EWF6GCCT VGE = 15 V, TJ ≤ 175 °C 80 200 60 150 40 100 20 50 0 0 25 50 75 100 125 150 TC (°C) Figure 3. Output characteristics (TJ = 25 °C) IC (A) IGBT230216EWF6GOC25 VGE = 15 V 140 0 0 75 100 125 80 IC (A) IGBT230216EWF6GOC175 VGE = 15 V 13 V 60 40 40 20 20 3 11 V 9V 80 60 2 TC (°C) 100 9V 1 150 Figure 4. Output characteristics (TJ = 175 °C) 120 11 V 100 DS11724 - Rev 2 50 140 13 V 120 0 0 25 4 VCE (V) 0 0 7V 1 2 3 4 VCE (V) page 5/17 STGB40H65FB STGB40H65FB electrical characteristics (curves) Figure 5. VCE(sat) vs. junction temperature VCE(SAT) (V) IGBT230216EWF6GVCET VGE = 15 V 2.4 IC = 80 A Figure 6. VCE(sat) vs. collector current VCE(SAT) (V) 2.4 IGBT230216EWF6GVCEC VGE = 15 V TJ = 175 °C 2.2 2.2 2.0 2.0 1.8 IC = 40 A 1.8 TJ = 25 °C 1.6 1.6 TJ = -40 °C 1.4 1.4 1.2 IC = 20 A 1.2 -75 -25 25 75 125 175 TJ (°C) Figure 7. Collector current vs. switching frequency IC (A) IGBT230216EWF6GCCS 1.0 0 10 20 30 40 50 60 70 IC (A) Figure 8. Forward bias safe operating area IC (A) IGBT230216EWF6GFSOA 100 80 10 2 TC = 80 °C 60 TC = 100 °C tp = 10 µs 10 1 40 tp = 100 µs 20 Rectangular current shape (duty cycle = 0.5, VCC = 400 V RG = 5 Ω, VGE = 0/15 V , TJ = 175 °C 0 10 0 10 1 f (kHz) 10 2 140 IGBT230216EWF6GTCH VCE = 5 V 10 1 VGE(th) (Norm.) tp = 1 ms VCE (V) 10 2 IGBT230216EWF6GNVGE VCE = VGE , IC = 1 mA 1.2 TJ = 25 °C 120 10 0 10 0 Figure 10. Normalized VGE(th) vs. junction temperature Figure 9. Transfer characteristics IC (A) single pulse, TC = 25°C TJ ≤ 175 °C, VGE = 15 V TJ = 175 °C 100 1.0 80 60 TJ = 175 °C 0.8 40 0 6 DS11724 - Rev 2 0.6 TJ = 25 °C 20 7 8 9 10 VGE (V) 0.4 -75 -25 25 75 125 175 TJ (°C) page 6/17 STGB40H65FB STGB40H65FB electrical characteristics (curves) Figure 11. Normalized V(BR)CES vs. junction temperature V(BR)CES (Norm.) IGBT230216EWF6GNVBR Figure 12. Capacitance variations C (pF) IGBT230216EWF6GCVR CIES IC = 2 mA 1.12 1.08 10 3 1.04 1.00 10 2 0.96 COES CRES 0.92 0.88 -75 -25 25 75 125 175 TJ (°C) Figure 13. Gate charge vs. gate-emitter voltage VGE (V) IGBT230216EWF6GGCGE VCC = 520 V, IC = 40 A 10 1 10 -1 10 0 10 1 VCE (V) 10 2 Figure 14. Switching energy vs. collector current E (µJ) IGBT230216EWF6GSLC VGE = 15 V, TJ = 175 °C VCC = 400 V, RG = 5 Ω 3000 15 2400 10 Eon 1800 Eoff 1200 5 600 0 0 40 80 120 160 200 Qg (nC) Figure 15. Switching energy vs. gate resistance E (µJ) IGBT230216EWF6GSLG VCC = 400 V, IC = 40 A VGE = 15 V, TJ = 175 °C 2000 Eon 0 0 10 20 30 40 50 60 70 IC (A) Figure 16. Switching energy vs. temperature E (μJ) IGBT230216EWF6GSLT VCC = 400 V, IC = 40 A RG = 5 Ω, VGE = 15 V Eon 1200 1600 800 Eoff 1200 Eoff 800 400 0 DS11724 - Rev 2 4 8 12 16 20 400 RG (Ω) 0 -75 -25 25 75 125 175 TJ (°C) page 7/17 STGB40H65FB STGB40H65FB electrical characteristics (curves) Figure 17. Switching energy vs. collector emitter voltage E (µJ) 2000 Figure 18. Switching times vs. collector current t (ns) IGBT230216EWF6GSLV VGE = 15 V, TJ = 175 °C IC = 40 A, RG = 5 Ω Eon t d(off) 1600 1200 IGBT230216EWF6GSTC VCC = 400 V, VGE = 15 V RG = 5 Ω, TJ = 175 °C 10 2 tf t d(on) tr Eoff 10 1 800 400 0 150 200 250 300 350 400 450 500 VCE (V) 10 0 0 10 20 30 40 50 60 70 IC (A) Figure 19. Switching times vs. gate resistance t (ns) IGBT230216EWF6GSTR VCC = 400 V, VGE = 15 V IC = 40 A, TJ = 175 °C td(off) 10 2 tf td(on) tr 10 1 0 4 8 12 16 20 RG (Ω) Figure 20. Thermal impedance K ZthTO2T_A δ = 0.5 δ = 0.2 δ = 0.05 δ = 0.1 δ = 0.02 10 -1 δ = 0.01 Single pulse 10 -2 10 -5 DS11724 - Rev 2 10 -4 10 -3 10 -2 10 -1 tp (s) page 8/17 STGB40H65FB Test circuits 3 Test circuits Figure 21. Test circuit for inductive load switching C A Figure 22. Gate charge test circuit A k L=100 µH G E B B RG 3.3 µF C G + k VCC 1000 µF k D.U.T k E k k AM01505v1 AM01504v1 Figure 23. Switching waveform 90% 10% VG 90% VCE 10% tr(Voff) tcross 90% IC td(on) ton td(off) tr(Ion) 10% tf toff AM01506v1 DS11724 - Rev 2 page 9/17 STGB40H65FB Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS11724 - Rev 2 page 10/17 STGB40H65FB D²PAK (TO-263) type A2 package information 4.1 D²PAK (TO-263) type A2 package information Figure 24. D²PAK (TO-263) type A2 package outline 0079457_A2_25 DS11724 - Rev 2 page 11/17 STGB40H65FB D²PAK (TO-263) type A2 package information Table 6. D²PAK (TO-263) type A2 package mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 E1 8.70 8.90 9.10 E2 7.30 7.50 7.70 e 10.40 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.40 0° 8° Figure 25. D²PAK (TO-263) recommended footprint (dimensions are in mm) Footprint DS11724 - Rev 2 page 12/17 STGB40H65FB D²PAK packing information 4.2 D²PAK packing information Figure 26. D²PAK tape outline DS11724 - Rev 2 page 13/17 STGB40H65FB D²PAK packing information Figure 27. D²PAK reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 7. D²PAK tape and reel mechanical data Tape Dim. DS11724 - Rev 2 Reel mm mm Dim. Min. Max. Min. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T Max. 330 13.2 26.4 30.4 P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 page 14/17 STGB40H65FB Revision history Table 8. Document revision history DS11724 - Rev 2 Date Revision Changes 27-Jun-2016 1 Initial release. 13-Feb-2019 2 Updated Section 4.1 D²PAK (TO-263) type A2 package information. page 15/17 STGB40H65FB Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4.1 D²PAK (TO-263) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.2 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 DS11724 - Rev 2 page 16/17 STGB40H65FB IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS11724 - Rev 2 page 17/17