STGD10HF60KD

STGD10HF60KD Automotive-grade 10 A, 600 V, short-circuit rugged IGBT with Ultrafast diode Datasheet - production data Features • Designed for automotive applications and AEC-Q101 qualified TAB • Low on-voltage drop (VCE(sat)) • Low Cres / Cies ratio (no cross conduction susceptibility) 3 1 • Switching losses include diode recovery energy DPAK • Short-circuit rated • Very soft Ultrafast recovery anti-parallel diode Applications Figure 1. Internal schematic diagram • High frequency inverters • SMPS and PFC in both hard switch and resonant topologies • Motor drives • Injection systems Description This device utilizes the advanced PowerMESH™ process for the IGBT and the Turbo 2 Ultrafast high voltage technology for the diode. The combination results in a very good trade-off between conduction losses and switching behavior rendering the product ideal for diverse high voltage applications operating at high frequencies. Table 1. Device summary Order code Marking Package Packaging STGD10HF60KD GD10HF60KD DPAK Tape and reel September 2015 This is information on a product in full production. DocID022874 Rev 3 1/21 www.st.com Contents STGD10HF60KD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 DocID022874 Rev 3 STGD10HF60KD 1 Electrical ratings Electrical ratings TCASE = 25 °C unless otherwise specified. Table 2. Absolute maximum ratings Symbol Value Unit VCES Collector-emitter voltage (VGE = 0) 600 V IC(1) Collector current (continuous) at TC = 25 °C 18 A IC(1) Collector current (continuous) at TC = 100 °C 10 A ICL (2) Turn-off latching current 30 A ICP (3) Pulsed collector current 30 A Gate-emitter voltage ± 20 V Gate-emitter voltage pulsed (tp ≤ 1 ms) ± 30 V Diode RMS forward current 7 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 20 A PTOT Total dissipation 62.5 W 10 µs IGBT operating junction temperature – 55 to 150 °C Diode operating junction temperature – 55 to 175 °C Storage temperature – 65 to 150 °C VGE VGEM IF tscw Tj Tstg 1. Parameter Short circuit withstand time (VCE = 50 V, VGE = 15 V, TC = 150 °C) Calculated according to the iterative formula: T j ( max ) – T C I C ( TC ) = ------------------------------------------------------------------------------------------------------R thj – c × VCE ( sat ) ( max ) ( T j ( max ), IC ( T C ) ) 2. Vclamp = 80% of VCES, Tj =150 °C, RG=10 Ω, VGE=15 V 3. Pulse width limited by max. junction temperature allowed Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case IGBT 2 °C/W Rthj-case Thermal resistance junction-case diode 5.8 °C/W Rthj-amb 100 °C/W Thermal resistance junction-ambient DocID022874 Rev 3 3/21 21 Electrical characteristics 2 STGD10HF60KD Electrical characteristics TCASE=25 °C unless otherwise specified. Table 4. Static Symbol Parameter Test conditions IC = 1 mA, TC = -40 °C IC = 1 mA IC = 1 mA, TC = 150 °C Collector-emitter V(BR)CES breakdown voltage (VGE= 0) Min. Typ. Max. Unit 600 610 650 700 (1) V V V IGES Gate-emitter leakage current (VCE = 0) VGE = ±20 V VGE = ±20 V, TC = 150 °C ±100 ±1 nA µA ICES Collector cut-off current (VGE = 0) VCE = 600 V VCE = 600 V, TC = 150 °C 150 1 µA mA VGE(th) Gate threshold voltage VCE = VGE, IC = 250 µA 4.5 6.5 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 5 A 1.4 2.5 V 1. Value guaranteed by design Table 5. Dynamic (1) Symbol Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE= 0 VCE = 400 V, IC = 5 A, VGE = 15 V Qge Gate-emitter charge Qgc Gate-collector charge 1. Values guaranteed by design 4/21 DocID022874 Rev 3 Min. Typ. Max. Unit - 430 - pF - 45 - pF - 10 - pF - 23 - nC - 4 - nC - 11 - nC STGD10HF60KD Electrical characteristics Table 6. Switching on/off (inductive load) (1) Symbol td(on) tr Parameter Turn-on delay time VCC = 400 V, IC = 5 A RG = 10 Ω, VGE = 15 V Current rise time (di/dt)on td(on) tr tr(Voff) td(off) tf Typ. Turn-on delay time Turn-on current slope VCC = 400 V, IC = 5 A RG = 10 Ω, VGE= 15 V TC = 150 °C Off voltage rise time VCC = 400 V, IC = 5 A, RGE = 10 Ω, VGE = 15 V Turn-off delay time tr(Voff) Off voltage rise time td(off) Turn-off delay time VCC = 400 V, IC = 5 A, RGE = 10 Ω, VGE = 15 V TC= 150 °C Current fall time Max. Unit - 9.5 - ns - 4.4 - ns 930 Current fall time tf Min. Turn-on current slope Current rise time (di/dt)on Test conditions A/µs - 11 - ns - 4.8 - ns - 904 - A/µs - 34 - ns - 87 - ns - 100 - ns - 83 - ns - 93 - ns - 224 - ns Min Typ. Max Unit - 45 - µJ - 105 - µJ - 150 - µJ - 84 - µJ - 286 - µJ - 370 - µJ 1. Value guaranteed by design Table 7. Switching energy (inductive load) (1) Symbol Eon (2) Eoff (3) Ets Parameter Turn-on switching losses Turn-off switching losses Turn-on switching losses (3) Turn-off switching losses Ets VCC = 400 V, IC = 5 A RG = 10 Ω, VGE = 15 V Total switching losses Eon (2) Eoff Test conditions Total switching losses VCC = 400 V, IC = 5 A RG = 10 Ω, VGE= 15 V TC = 150 °C 1. Value guaranteed by design 2. IGBT and diode are at the same temperature 3. Turn-off losses include also the tail of the collector current DocID022874 Rev 3 5/21 21 Electrical characteristics STGD10HF60KD Table 8. Collector-emitter diode Symbol VF trr (1) Parameter Forward on-voltage Min Typ. Max Unit IF = 3 A - 1.75 2.5 V IF = 3 A, TC= 150 °C - 1.45 V - 50 ns - 45 nC - 1.7 A - 100 ns - 150 nC - 3.1 A Reverse recovery time Qrr (1) Reverse recovery charge Irm (1) Reverse recovery current trr (1) Reverse recovery time (1) Reverse recovery charge Irm (1) Reverse recovery current Qrr Test conditions IF = 3 A, VR = 400 V, di/dt = 100 A/µs IF = 3 A, VR = 400 V, TC= 150 °C, di/dt = 100 A/µs 1. Value guaranteed by design 6/21 DocID022874 Rev 3 STGD10HF60KD 2.1 Electrical characteristics Electrical characteristics (curves) Figure 2. Output characteristics (TC = -50°C) *,3*6$ ,& $ Figure 3. Output characteristics (TC = 25°C) 7& ƒ& 9*( 9     9 9*( 9 7& ƒ& 9   9    *,3*6$ ,& $     Figure 4. Output characteristics (TC = 150°C) *,3*6$ ,& $ 9*( 9 9   9&(9  9  9  9   7& ƒ&  9 9&(9  Figure 5. Transfer characteristics *,3*6$ ,& $ 9&( 9      7& ƒ& 7& ƒ&    9   9   9   7& ƒ&         Figure 6. Collector-emitter on voltage vs. collector current 9FHVDW 9 *,3*6$ 9*( 9    9&(9        9*(9 Figure 7. Collector-emitter on voltage vs. temperature *,3*6$ 9&(VDW 9 $  7& ƒ& $   7& ƒ&  $      7& ƒ&    $    ,&$ DocID022874 Rev 3   $     7-ƒ& 7/21 21 Electrical characteristics STGD10HF60KD Figure 8. Normalized V(BR)CES vs. temperature *,3*6$ 9%5&(6 QRUP ,& P$ Figure 9. Normalized gate threshold vs. temperature *,3*6$ 9*(WK QRUP ,& —$ 9*( 9&(                          7&ƒ&  Figure 10. Gate charge vs. gate-emitter voltage *,3*6$ 9*( 9 9&& 9 ,& $      7&ƒ& Figure 11. Capacitance variations *,3*6$ & S) I 0+] 9*(     &LHV   &UHV         Figure 12. Switching losses vs. temperature *,3*6$ (—-  ,& $ 9&& 9 9*( 9 5* ȍ  (—-    9&(9 *,3*6$ ,& $ 7- ƒ& 9&& 9 9*( 9 (WV  (2))     (21  (21    &RHV  Figure 13. Switching losses vs. gate resistance  (2))  8/21   4JQ&         7&ƒ& DocID022874 Rev 3      5*: STGD10HF60KD Electrical characteristics Figure 14. Switching losses vs. collector current *,3*6$ (—- 7- ƒ& 5* ȍ 9&& 9 9*( 9    Figure 15. Short-circuit widthstand time and current vs. gate-emitter voltage *,3*6$ ,6&$ W6&—V 7- ƒ& (WV  5* :  9&& 9 ,6& W6&    (2))           (21        ,&$ Figure 16. RBSOA       9*(9 *,3*6$ WQV W GRII VGE=15V TJ=150°C TC=25°C 100   Figure 17. Switching times vs. gate resistance at TJ=25 °C AM04933v1 IC (A)  WI L  10 W GRQ W UL 1  0.1 ,& $ 9&& 9 9*( 9 0.01  0.001 0.1 1 10 100  VCE(V)     5*: Figure 18. Switching times vs. gate resistance Figure 19. Switching times vs. collector current at TJ=150 °C *,3*6$ WQV W GRII *,3*6$ WQV 5* : 7- ƒ& 9&& 9 9*( 9 W IL W GRQ  WIL WGRII  W UL WGRQ   ,& $ 9&& 9 9*( 9 7- ƒ&    WUL     5*ȍ DocID022874 Rev 3       ,&$ 9/21 21 Electrical characteristics STGD10HF60KD Figure 20. Diode forward voltage drop vs. forward current AM04940v1 IFM(A) Figure 21. Peak reverse recovery current vs. di/dt *,3*6$ ,50 $ ,) $ 9&& 9  24 22 20 18 16 14 12 10 8 6 4 2 0 0   7& ƒ&  7& ƒ&  TC=125°C   TC=25°C   TC=-50°C 0.5 1 2 1.5 2.5 3 3.5 VFM (V) Figure 22. Reverse recovery time vs. di/dt *,3*6$ WUU QV ,) $ 9&& 9         GL GW$—V Figure 23. Reverse recovery softness factor vs. di/dt *,3*6$ 6 IDFWRU ,) $ 9&& 9     7& ƒ&  7& ƒ&      7& ƒ&   7& ƒ&          GL GW$—V Figure 24. Reverse recovery charges vs. di/dt *,3*6$ 4UU Q& ,) $ 9&& 9 7& ƒ&   7& ƒ&  10/21       GL GW$—V DocID022874 Rev 3      GL GW$—V STGD10HF60KD Electrical characteristics Figure 25. IGBT thermal impedance AM04934v1 K Zth=k Rthj-c δ=tp/τ δ=0.5 0.2 tp τ 0.1 -1 10 0.05 Junction Ptot(t) C 1 + 0.02 R 1 - R R 3 2 C C2 C 3 0.01 -2 R 5 R 4 4 Tcase C 5 R 6 C R8 R 7 C 6 7 C 8 R 9 C 9 + - Single pulse 10 -5 10 -4 -2 -3 10 -1 10 10 tp (s) 10 Table 9. IGBT RC-Cauer thermal network Symbol Value Unit Symbol Value Unit R1 0.344 °C/W C1 0.4E-3 W*s/°C R2 0.0686 °C/W C2 0.162E-4 W*s/°C R3 0.0958 °C/W C3 0.684E-3 W*s/°C R4 0.177 °C/W C4 0.923E-4 W*s/°C R5 0.250 °C/W C5 0.3E-2 W*s/°C R6 0.245 °C/W C6 0.9E-2 W*s/°C R7 0.152 °C/W C7 0.678E-3 W*s/°C R8 0.135 °C/W C8 0.807E-3 W*s/°C R9 0.530 °C/W C9 0.248 W*s/°C DocID022874 Rev 3 11/21 21 Electrical characteristics STGD10HF60KD Figure 26. Diode thermal impedance AM04949v1 K Zth=k Rthj-c δ=tp/τ δ=0.5 0.2 tp τ 0.1 -1 10 0.05 Junction 0.02 Ptot(t) 0.01 1 C 1 + - R3 R2 R C 2 C R 5 R4 C 3 4 Tcase Single pulse C 5 R 6 R 7 C6 C 7 R C8 8 R 9 C9 + - -2 10 -2 -3 -4 -5 -1 10 10 10 10 tp (s) 10 Table 10. Diode RC-Cauer thermal network 12/21 Symbol Value Unit Symbol Value Unit R1 0.478 °C/W C1 0.8E-4 W*s/°C R2 0.542 °C/W C2 1E-4 W*s/°C R3 0.600 °C/W C3 2E-4 W*s/°C R4 0.277 °C/W C4 0.5E-5 W*s/°C R5 0.844 °C/W C5 0.145E-2 W*s/°C R6 0.313 °C/W C6 0.499E-4 W*s/°C R7 0.108 °C/W C7 0.727E-3 W*s/°C R8 0.891 °C/W C8 0.393E-4 W*s/°C R9 1.73 °C/W C9 0.0176 W*s/°C DocID022874 Rev 3 STGD10HF60KD 3 Test circuits Test circuits Figure 27.Test circuit for inductive load switching Figure 28.Gate charge test N N N N N N $0Y $0Y Figure 29.Switching waveform Figure 30.Diode reverse recovery waveform GLGW 4UU  ,)  9* WUU WV WI  9&( 7GRQ 7RQ 9550  7GRII 7U,RQ  ,550  ,& W ,550  7U9RII 7FURVV 7I 7RII GYGW $0Y DocID022874 Rev 3 $0Y 13/21 21 Package mechanical data 4 STGD10HF60KD Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 14/21 DocID022874 Rev 3 STGD10HF60KD Package mechanical data Figure 31. DPAK (TO-252) type A outline B$B DocID022874 Rev 3 15/21 21 Package mechanical data STGD10HF60KD Table 11. DPAK (TO-252) type A mechanical data mm Dim. Min. Typ. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 4.60 4.70 4.80 e 2.16 2.28 2.40 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 5.10 V2 5.25 6.60 1.00 R 16/21 Max. 0.20 0° 8° DocID022874 Rev 3 STGD10HF60KD Package mechanical data Figure 32. DPAK (TO-252) footprint (a) )3BB a. All dimensions are in millimeters DocID022874 Rev 3 17/21 21 Packaging mechanical data 5 STGD10HF60KD Packaging mechanical data Figure 33. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 18/21 DocID022874 Rev 3 STGD10HF60KD Packaging mechanical data Figure 34. Reel for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius G measured at hub Tape slot in core for tape start 25 mm min. width AM08851v2 Table 12. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID022874 Rev 3 18.4 22.4 19/21 21 Revision history 6 STGD10HF60KD Revision history Table 13. Document revision history Date Revision 28-Feb-2012 1 First release 27-May-2014 2 – Added: electrical characteristics (curves) section – Updated: package mechanical data section – Minor text changes 3 – Modified: VCE(sat) (min and max) values in static table – Modified: note 1 relative to collector-emitter diode table – Modified: collector-emitter on voltage vs. collector current figure and collector-emitter on voltage vs. temperature – Updated: test circuits section – Updated: Package mechanical data section – Minor text changes 15-Sep-2015 20/21 Changes DocID022874 Rev 3 STGD10HF60KD IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved DocID022874 Rev 3 21/21 21