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STGD18N40LZT4

STGD18N40LZT4

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT428

  • 描述:

    IGBT 420V 25A 125W DPAK

  • 数据手册
  • 价格&库存
STGD18N40LZT4 数据手册
STGB18N40LZT4 Datasheet Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Features TAB 3 1 D2PAK C (2 or TAB) AEC-Q101 qualified SCIS energy of 180 mJ @ TC = 150 °C, L = 3 mH • • • • • • • Parts are 100% tested in SCIS ESD gate-emitter protection Gate-collector high voltage clamping Logic level gate drive Very low saturation voltage High pulsed current capability Gate and gate-emitter resistor Applications RG G (1) • • • Pencil coil electronic ignition driver RGE Description E (3) IGBTG1C2TABE3ESD This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. The device show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required. Product status link STGB18N40LZT4 Product summary Order code STGB18N40LZT4 Marking GB18N40LZ Package D²PAK Packing Tape and reel DS5664 - Rev 7 - January 2021 For further information contact your local STMicroelectronics sales office. www.st.com STGB18N40LZT4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0 V) VCES(clamped) V VECS Emitter-collector voltage (VGE = 0 V) 20 V Continuous collector current at TC = 100 °C 30 A Pulsed collector current 40 A VGE(clamped) V IC ICP (1) VGE Gate-emitter voltage PTOT Total power dissipation at TC = 25 °C 150 W Single pulse energy TC = 25 °C, L = 3 mH, VCC = 50 V 300 mJ Single pulse energy TC = 150 °C, L = 3 mH, VCC = 50 V 180 mJ ESCIS (2) Human body model, R = 1.5 kΩ, C = 100 pF ESD Machine model, R = 0, C = 100 pF Charged device model TSTG TJ Storage temperature range Operating junction temperature range 8 kV 800 V 2 kV -55 to 175 °C °C 1. Pulse width limited by max. junction temperature. 2. For ESCIS test circuit refer to Figure 14. Test circuit for inductive load switching with A and B not connected. Table 2. Thermal data Symbol DS5664 - Rev 7 Parameter RthJC Thermal resistance, junction-to-case RthJA Thermal resistance, junction-to-ambient Value Unit 1 °C/W 62.5 °C/W page 2/16 STGB18N40LZT4 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 3. Static characteristics Symbol Parameter Test conditions VCES(clamped) Collector-emitter clamped voltage IC = 2 mA, VGE = 0 V, TJ= - 40 °C to 175 °C Min. Typ. Max. Unit 360 390 420 V 28 V(BR)ECS Emitter-collector break-down voltage VGE = 0 V, IC = 75 mA 20 VGE(clamped) Gate-emitter clamped voltage IG = ±2 mA 12 VGE = 4.5 V, IC = 10 A VCE(sat) Collector-emitter saturation voltage 1.35 VGE = 4.5 V, IC = 10 A, TJ = 150 °C VGE = 3.8 V, IC = 6 A VGE(th) Gate-threshold voltage VGE = VCE, IC = 1 mA, TJ = -40 °C 1.4 VGE = VCE, IC = 1 mA 1.2 VGE = VCE, IC = 1 mA, TJ = 150 °C (1) 0.7 RGE Gate emitter resistance RG Gate resistance VGE = ±10 V, VCE = 0 V V V V 1.6 2.3 V V TJ = 150 °C (1) Gate-emitter leakage current 1.7 1.30 VCE = 200 V, VGE = 0 V, IGES V V TJ = 150 °C (1) Collector cut-off current 16 1.30 VCE = 15 V, VGE = 0 V, ICES V 10 µA 100 µA 450 625 830 µA 12 16 22 kΩ 1.6 kΩ 1. Defined by design, not subject to production test. Table 4. Dynamic characteristics Symbol Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg DS5664 - Rev 7 Parameter Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V VCE = 280 V, IC = 10 A, VGE = 0 to 5 V Min. Typ. Max. - 490 - - 90 - - 5 - - 29 - Unit pF nC page 3/16 STGB18N40LZT4 Electrical characteristics Table 5. Resistive load switching characteristics Symbol td(on) tr td(on) tr Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VCC = 14 V, VGE = 5 V, - 0.65 - μs Current rise time RL = 1 Ω - 3.5 - μs Turn-on delay time VCC = 14 V, VGE = 5 V, - 0.65 - μs Current rise time RL= 1 Ω, TJ = 150 °C - 3.8 - μs Min. Typ. Max. Unit - 13.5 - μs - 5.5 - μs - 105 - V/μs Table 6. Inductive load switching characteristics Symbol td(off) tf Turn-off delay time Current fall time Test conditions VCC = 300 V, L = 1 mH, IC = 10 A, VGE = 5 V, dV/dt Turn-off voltage slope td(off) Turn-off delay time VCC = 300 V, L = 1 mH, - 14.2 - μs Current fall time IC = 10 A, VGE = 5 V, TJ = 150 °C - 8 - μs - 97 - V/μs tf dV/dt DS5664 - Rev 7 Parameter Turn-off voltage slope page 4/16 STGB18N40LZT4 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Collector-emitter on voltage vs temperature Figure 2. Collector-emitter on voltage vs temperature Figure 3. Collector-emitter on voltage vs temperature Figure 4. Self clamped inductive switch AM03942v1 IS CIS (A) VGE =5V VCE =50V 24 16 TJ =25°C 8 TJ =150°C 0 Figure 5. Output characteristics at 25 °C HV42380 60 IC (A) VGE = 5 V 6 → VGE = 4 V VGE = 3 .8 V 30 20 HV42390 VGE = 8 V VGE = 4.5 V VGE = 5 V VGE = 4 V 40 VGE = 3.8 V 30 20 TC = -40 °C T C = 25 °C 10 DS5664 - Rev 7 L(mH) IC (A) 60 50 40 0 8 Figure 6. Output characteristics at -40 °C VGE = 4.5 V VGE = 8 V 50 4 2 0 10 0 1 2 3 4 5 0 VCE (V) 0 1 2 3 4 5 VCE (V)6 page 5/16 STGB18N40LZT4 Electrical characteristics (curves) Figure 7. Output characteristics at 175 °C HV42400 60 IC (A) VGE = 5 V VGE = 8 V Figure 8. Transfer characteristics HV38710 40 IC (A) 35 50 VGE = 4.5 V 40 VGE = 4 V 25 30 VGE = 3.8 V 20 VCE= 5V 30 15 20 175°C 10 TC = 175 °C 10 25°C 5 -40°C 0 0 0 1 2 3 4 5 VCE (V)6 1.0 1.5 2.0 2.5 3.0 3.5 4.0 GE (V) 4.5 V5.0 Figure 9. Collector cut-off current vs temperature Figure 10. Normalized collector emitter voltage vs temperature Figure 11. Normalized gate threshold voltage vs temperature Figure 12. Normalized collector emitter on voltage vs temperature DS5664 - Rev 7 page 6/16 STGB18N40LZT4 Electrical characteristics (curves) Figure 13. Thermal impedance DS5664 - Rev 7 page 7/16 STGB18N40LZT4 Test circuits 3 Test circuits Figure 14. Test circuit for inductive load switching Figure 15. Test circuit for resistive load switching A C A L=100 µH G L E B B G + 3.3 µF C VCC 1000 µF D.U.T RG E AM01504v2 AM01504v1 Figure 17. Switching waveform Figure 16. Gate charge test circuit k k 90% 10% VG 90% VCE k 10% tr(Voff) tcross 90% k IC k td(on) ton td(off) tr(Ion) 10% tf toff k AM01505v1 AM01506v1 DS5664 - Rev 7 page 8/16 STGB18N40LZT4 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 D²PAK (TO-263) type A package information Figure 18. D²PAK (TO-263) type A package outline 0079457_26 DS5664 - Rev 7 page 9/16 STGB18N40LZT4 D²PAK (TO-263) type A package information Table 7. D²PAK (TO-263) type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 E1 8.30 8.50 8.70 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 DS5664 - Rev 7 Typ. 0.40 0° 8° page 10/16 STGB18N40LZT4 D²PAK (TO-263) type A package information Figure 19. D²PAK (TO-263) recommended footprint (dimensions are in mm) Footprint_26 DS5664 - Rev 7 page 11/16 STGB18N40LZT4 D²PAK packing information 4.2 D²PAK packing information Figure 20. D²PAK tape outline DS5664 - Rev 7 page 12/16 STGB18N40LZT4 D²PAK packing information Figure 21. D²PAK reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 8. D²PAK tape and reel mechanical data Tape Dim. DS5664 - Rev 7 Reel mm mm Dim. Min. Max. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 330 13.2 26.4 30.4 page 13/16 STGB18N40LZT4 Revision history Table 9. Document revision history Date Revision Changes 18-Jan-2008 1 Initial release. 07-Mar-2008 2 Modified Figure 7, Figure 8, Figure 10. 07-May-2008 3 Modified Figure 9 31-Mar-2009 4 Added new package, mechanical data: TO-220 18-May-2009 5 Modified Figure 5 Updated Table 1: Device summary, Table 2: Absolute maximum ratings and Table 3: Thermal data 12-Nov-2014 6 Updated 3: Test circuits Updated Section 4: Package mechanical data Updated Section 5: Packaging mechanical data Minor text changes 11-Jan-2021 DS5664 - Rev 7 7 The part numbers STGD18N40LZ and STGP18N40LZT4 have been removed. Minor text changes page 14/16 STGB18N40LZT4 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 4.1 D²PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 DS5664 - Rev 7 page 15/16 STGB18N40LZT4 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS5664 - Rev 7 page 16/16
STGD18N40LZT4 价格&库存

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STGD18N40LZT4
  •  国内价格 香港价格
  • 2500+7.971852500+0.96628

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