STGD4M65DF2

STGD4M65DF2 Datasheet Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT Features TAB 2 3 1 DPAK • • 6 µs of short-circuit withstand time VCE(sat) = 1.6 V (typ.) @ IC = 4 A • • • • Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications • • • Motor control UPS PFC Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status STGD4M65DF2 Product summary Order code STGD4M65DF2 Marking G4M65DF2 Package DPAK Packing Tape and reel DS11397 - Rev 5 - December 2018 For further information contact your local STMicroelectronics sales office. www.st.com STGD4M65DF2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit 650 V Continuous collector current at TC = 25 °C 8 A Continuous collector current at TC = 100 °C 4 A Pulsed collector current 16 A Gate-emitter voltage ±20 V Continuous forward current at TC = 25 °C 8 A Continuous forward current at TC = 100 °C 4 A Pulsed forward current 16 A PTOT Total power dissipation at TC = 25 °C 68 W TSTG Storage temperature range - 55 to 150 °C Operating junction temperature range - 55 to 175 °C VCES IC ICP (1) VGE IF IFP (1) TJ Parameter Collector-emitter voltage (VGE = 0 V) 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol DS11397 - Rev 5 Parameter Value Unit RthJC Thermal resistance junction-case IGBT 2.2 °C/W RthJC Thermal resistance junction-case diode 5 °C/W RthJA Thermal resistance junction-ambient 100 °C/W page 2/20 STGD4M65DF2 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 3. Static characteristics Symbol V(BR)CES VCE(sat) VF Parameter Test conditions Collector-emitter breakdown voltage Collector-emitter saturation voltage Forward on-voltage VGE = 0 V, IC = 250 µA Min. Typ. 650 1.6 VGE = 15 V, IC = 4 A, TJ = 125 °C 1.9 VGE = 15 V, IC = 4 A, TJ = 175 °C 2.1 IF = 4 A 1.9 IF = 4 A, TJ = 125 °C 1.7 IF = 4 A, TJ = 175 °C 1.6 Gate threshold voltage VCE = VGE, IC = 250 µA ICES Collector cut-off current IGES Gate-emitter leakage current Unit V VGE = 15 V, IC = 4 A VGE(th) Max. 5 2.1 V V 6 7 V VGE = 0 V, VCE = 650 V 25 µA VCE = 0 V, VGE = ± 20 V ±250 µA Table 4. Dynamic characteristics Symbol DS11397 - Rev 5 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge Test conditions VCE= 25 V, f = 1 MHz, VGE = 0 V VCC = 520 V, IC = 4 A, VGE = 0 to 15 V (see Figure 29. Gate charge test circuit) Min. Typ. Max. Unit - 369 - - 24.8 - - 8 - - 15.2 - - 3 - - 7 - pF nC page 3/20 STGD4M65DF2 Electrical characteristics Table 5. IGBT switching characteristics (inductive load) Symbol td(on) tr Parameter Test conditions Min. tf Max. Unit Turn-on delay time 12 - ns Current rise time 6.9 - ns 480 - A/µs 86 - ns 120 - ns (di/dt)on Turn-on current slope td(off) Typ. Turn-off delay time VCE = 400 V, IC = 4 A, VGE = 15 V, RG = 47 Ω (see Figure 28. Test circuit for inductive load switching ) Current fall time Eon (1) Turn-on switching energy 0.040 - mJ Eoff (2) Turn-off switching energy 0.136 - mJ Total switching energy 0.176 - mJ 11.6 - ns 8 - ns 410 - A/µs 85 - ns 211 - ns Ets td(on) tr Turn-on delay time Current rise time (di/dt)on Turn-on current slope td(off) tf Turn-off delay time VCE = 400 V, IC = 4 A, VGE = 15 V, RG = 47 Ω, TJ = 175 °C (see Figure 28. Test circuit for inductive load switching) Current fall time Eon (1) Turn-on switching energy 0.067 - mJ Eoff (2) Turn-off switching energy 0.210 - mJ Ets Total switching energy 0.277 - mJ tsc Short-circuit withstand time VCC ≤ 400 V, VGE = 15 V, TJstart = 150 °C 6 - VCC ≤ 400 V, VGE = 13 V, TJstart = 150 °C 10 - µs 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. Table 6. Diode switching characteristics (inductive load) Symbol DS11397 - Rev 5 Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time - 133 - ns Qrr Reverse recovery charge - 140 - nC Irrm Reverse recovery current - 5 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 520 - A/µs Err Reverse recovery energy - 15 - µJ trr Reverse recovery time - 236 - ns Qrr Reverse recovery charge - 370 - nC Irrm Reverse recovery current - 6.6 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 378 - A/µs Err Reverse recovery energy - 32 - µJ IF = 4 A, VR = 400 V, VGE = 15 V, di/dt = 800 A/µs (see Figure 28. Test circuit for inductive load switching) IF = 4 A, VR = 400 V, VGE = 15 V, TJ = 175 °C, di/dt = 800 A/µs (see Figure 28. Test circuit for inductive load switching) page 4/20 STGD4M65DF2 STGD4M65DF2 electrical characteristics (curves) 2.1 STGD4M65DF2 electrical characteristics (curves) Figure 1. Power dissipation vs. case temperature IGBT160320161051PDT P TOT (W) VGE ≥15 V, T ≤ 175 °C J Figure 2. Collector current vs. case temperature IC (A) VGE ≥15 V, TJ ≤ 175 °C IGBT170320161114CCT 8 60 6 40 4 20 2 0 -50 0 50 100 150 T C(°C) Figure 3. Output characteristics (TJ = 25 °C) IC (A) IGBT160320161105OC25 V GE = 15 V 0 -50 0 50 100 150 T C(°C) Figure 4. Output characteristics (TJ = 175 °C) IC (A) IGBT160320161107OC175 V GE = 15 V 13 V 12 12 13 V 11 V 8 8 9V 4 0 0 1 2 3 4 7V 5 4 V CE (V) Figure 5. VCE(sat) vs. junction temperature V CE(SAT) (V) 3.0 11 V IGBT160320161120VCET V GE = 15 V 0 0 9V 7V 1 2 V CE(SAT) (V) 3.0 2.0 5 V CE (V) IGBT160320161125VCEC V GE = 15 V T j = 175 °C IC=8A T j = 25 °C 2.0 IC=4A 4 Figure 6. VCE(sat) vs. collector current 2.5 2.5 3 1.5 1.5 1.0 -50 DS11397 - Rev 5 T j = -40 °C 1.0 IC=2A 0 50 100 150 T J (°C) 0.5 0 2 4 6 I C (A) page 5/20 STGD4M65DF2 STGD4M65DF2 electrical characteristics (curves) Figure 7. Collector current vs. switching frequency IC (A) IGBT160320161125CCS 12 10 Figure 8. Forward bias safe operating area IGBT160320161133FSOA IC (A) single pulse, TC = 25°C, TJ ≤175 °C, VGE = 15 V tp = 1 µs 10 1 8 tp = 10 µs TC = 80 °C 6 4 2 tp = 100 µs 10 0 TC = 100 °C tp = 1 ms Rectangular current shape (duty cycle = 0.5, VCC = 400 V, RG = 47 Ω,VGE = 0/15 V, Tj = 175 °C 0 10 0 10 1 f (kHz) 10 2 Figure 9. Transfer characteristics IC (A) IGBT170320161116TCH 10 -1 10 0 10 1 Figure 10. Diode VF vs. forward current VF (V) IGBT160320161134DVF 2.6 V CE = 6 V 12 T j = -40 °C 2.2 T j = 25 °C 1.8 8 T j = 175 °C 1.4 1.0 4 0 6 VCE (V) 10 2 T j = 175 °C 7 8 9 10 11 12 V GE (V) Figure 11. Normalized VGE(th) vs. junction temperature V GE(th) (Norm.) T j = 25 °C 0.6 IGBT160320161135NVGE V CE = V GE , I C = 250 µA 0.2 0 2 6 I F (A) Figure 12. Normalized V(BR)CES vs. junction temperature V (BR)CES (Norm.) IGBT160320161135NVBR I C = 250 μA 1.06 1.05 4 1.02 0.95 0.98 0.85 0.75 -50 DS11397 - Rev 5 0.94 0 50 100 150 T J (°C) 0.9 -50 0 50 100 150 T J (°C) page 6/20 STGD4M65DF2 STGD4M65DF2 electrical characteristics (curves) Figure 13. Capacitance variations C (pF) Figure 14. Gate charge vs. gate-emitter voltage IGBT160320161140GCGE V GE (V) V CC = 520 V, I C = 4 A, I G = 1 mA IGBT160320161139CVR C ies 10 2 15 12 9 10 1 6 C oes f = 1 MHz 10 0 10 -1 10 0 C res 10 1 10 2 V CE (V) Figure 15. Switching energy vs. collector current IGBT160320161145SLC E V GE = 15 V, (mJ) V CC = 400 V, R G = 47 Ω, T j = 175 °C 0.4 E tot 3 0 0 3 6 9 12 15 Q g (nC) Figure 16. Switching energy vs. gate resistance IGBT170320161117SLG E (mJ) V CC =400 V, I C = 4 A, V GE = 15 V, T j = 175 °C 0.5 0.4 E tot 0.3 0.3 0.2 E off E off 0.1 0.2 0.1 E on 0 0 2 4 6 I C (A) Figure 17. Switching energy vs. temperature IGBT170320161118SLT E (mJ) V CC = 400 V, I C = 4 A, R G = 47 Ω, E on 0 0 100 200 300 400 Figure 18. Switching energy vs. collector emitter voltage E (mJ) V GE = 15 V IGBT160320161148SLV I C = 4 A, R G = 47 Ω, V GE = 15 V, T j = 175 °C 0.24 R G (Ω) E tot 0.3 E tot 0.18 E off 0.2 E off 0.12 0.1 0.06 0 0 DS11397 - Rev 5 E on E on 50 100 150 T J (°C) 0 150 250 350 450 V CE (V) page 7/20 STGD4M65DF2 STGD4M65DF2 electrical characteristics (curves) Figure 19. Short-circuit time and current vs. VGE t sc (µs) VGE ≥15 V, T ≤ 175 °C J IGBT170320161118SCV I sc [A] 21 Figure 20. Switching times vs. collector current IGBT160320161149STC t (ns) V CC = 400 V, V GE = 15 V, R G = 47 Ω, T j = 175 °C tf 25 t d(off) 10 2 17 20 I SC t SC 13 t d(on) 15 10 1 9 10 5 9 10 11 12 13 14 15 5 V GE(V) Figure 21. Switching times vs. gate resistance IGBT160320161153STR t (ns) V CC = 400 V, V GE = 15 V, I C = 4 A, T j = 175 °C tf tr 10 0 0 2 4 6 I C (A) Figure 22. Reverse recovery current vs. diode current slope IGBT170320161121RRC Irrm (A) VCC = 400 V, VGE = 15 V, IF = 4 A, Tj = 175 °C 6 t d(off) 10 2 5 4 t d(on) tr 10 1 3 2 10 0 0 100 200 300 400 R G (Ω) Figure 23. Reverse recovery time vs. diode current slope t rr (ns) IGBT170320161122RRT V CC =400 V, V GE = 15 V, I F = 4 A, T j = 175 °C 440 300 450 600 750 di/dt (A/µs) Figure 24. Reverse recovery charge vs. diode current slope Qrr (nC) IGBT170320161123RRQ VCC = 400 V, VGE = 15 V, IF = 4 A, Tj = 175 °C 365 320 360 260 DS11397 - Rev 5 150 370 380 200 0 1 0 355 150 300 450 600 750 di/dt (A/µs) 350 0 150 300 450 600 750 di/dt (A/µs) page 8/20 STGD4M65DF2 STGD4M65DF2 electrical characteristics (curves) Figure 25. Reverse recovery energy vs. diode current slope E rr (μJ) IGBT170320161124RRE V CC = 400 V, V GE = 15 V, I F = 4 A, T j = 175 °C 62 54 46 38 30 0 150 300 450 600 750 di/dt (A/µs) Figure 26. Thermal impedance for IGBT ZthTO2T_B K δ=0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c δ=tp/t 0.01 Single pulse tp t -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 tp (s) Figure 27. Thermal impedance for diode DS11397 - Rev 5 page 9/20 STGD4M65DF2 Test circuits 3 Test circuits Figure 28. Test circuit for inductive load switching C A Figure 29. Gate charge test circuit A k L=100 µH G E B B 3.3 µF C G + k RG 1000 µF VCC k D.U.T k E k k AM01505v1 AM01504v1 Figure 31. Diode reverse recovery waveform Figure 30. Switching waveform 90% 10% VG 90% VCE 10% Tr(Voff) Tcross 25 90% IC Td(on) Ton 10% Td(off) Tr(Ion) Tf Toff AM01506v1 DS11397 - Rev 5 page 10/20 STGD4M65DF2 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS11397 - Rev 5 page 11/20 STGD4M65DF2 DPAK (TO-252) type A2 package information 4.1 DPAK (TO-252) type A2 package information Figure 32. DPAK (TO-252) type A2 package outline 0068772_type-A2_rev26 DS11397 - Rev 5 page 12/20 STGD4M65DF2 DPAK (TO-252) type A2 package information Table 7. DPAK (TO-252) type A2 mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 5.10 5.20 5.30 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 L1 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS11397 - Rev 5 Typ. 5.10 5.25 6.60 1.00 0.20 0° 8° page 13/20 STGD4M65DF2 DPAK (TO-252) type C2 package information 4.2 DPAK (TO-252) type C2 package information Figure 33. DPAK (TO-252) type C2 package outline 0068772_type-C2_rev26 DS11397 - Rev 5 page 14/20 STGD4M65DF2 DPAK (TO-252) type C2 package information Table 8. DPAK (TO-252) type C2 mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 c 0.47 0.60 c2 0.47 0.60 D 6.00 D1 5.10 E 6.50 E1 5.20 e 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 L2 6.20 5.60 6.60 6.70 5.50 0.90 1.25 0.51 BSC 0.60 L6 DS11397 - Rev 5 6.10 5.46 2.90 REF L3 L4 5.33 0.80 1.00 1.80 BSC θ1 5° 7° 9° θ2 5° 7° 9° V2 0° 8° page 15/20 STGD4M65DF2 DPAK (TO-252) type C2 package information Figure 34. DPAK (TO-252) recommended footprint (dimensions are in mm) DS11397 - Rev 5 page 16/20 STGD4M65DF2 DPAK (TO-252) packing information 4.3 DPAK (TO-252) packing information Figure 35. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DS11397 - Rev 5 page 17/20 STGD4M65DF2 DPAK (TO-252) packing information Figure 36. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 9. DPAK (TO-252) tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 DS11397 - Rev 5 Reel Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 page 18/20 STGD4M65DF2 Revision history Table 10. Document revision history Date Revision 25-Nov-2015 1 Changes First release. Modified: features in cover page 18-Apr-2016 2 28-Apr-2016 3 21-Nov-2016 4 Modified: Table 2: "Absolute maximum ratings", Table 4: "Static characteristics", Table 5: "Dynamic characteristics", Table 6: "IGBT switching characteristics (inductive load)" and Table 7: "Diode switching characteristics (inductive load)" Added: Section 2.1: "Electrical characteristics (curves)" Minor text changes Modified: Table 1: "Device summary" in cover page Minor text changes Updated Table 1. Absolute maximum ratings Updated Figure 24. Reverse recovery charge vs. diode current slope Updated Figure 31. Diode reverse recovery waveform 05-Dec-2018 DS11397 - Rev 5 5 Added Section 4.2 DPAK (TO-252) type C2 package information. page 19/20 STGD4M65DF2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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