STGD6M65DF2

STGD6M65DF2 Trench gate field-stop IGBT, M series 650 V, 6 A low loss Datasheet - production data Features       6 µs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 6 A Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Figure 1: Internal schematic diagram    Motor control UPS PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGD6M65DF2 G6M65DF2 DPAK Tape and reel August 2016 DocID028703 Rev 3 This is information on a product in full production. 1/20 www.st.com Contents STGD6M65DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 7 3 Test circuits ................................................................................... 12 4 Package information ..................................................................... 13 5 2/20 4.1 DPAK (TO-252) type A2 package information................................. 14 4.2 DPAK (TO-252) packing information ............................................... 17 Revision history ............................................................................ 19 DocID028703 Rev 3 STGD6M65DF2 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol VCES IC Parameter Value Unit Collector-emitter voltage (VGE = 0 V) 650 V Continuous collector current at TC = 25 °C 12 A Continuous collector current at TC = 100 °C 6 A ICP(1) Pulsed collector current 24 A VGE Gate-emitter voltage ±20 V Continuous forward current at TC = 25 °C 12 A Continuous forward current at TC = 100 °C 6 A Pulsed forward current 24 A IF IFP (1) PTOT Total dissipation at TC = 25 °C 88 W TSTG Storage temperature range - 55 to 150 °C Operating junction temperature range - 55 to 175 °C TJ Notes: (1)Pulse width limited by maximum junction temperature. Table 3: Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 1.7 °C/W RthJC Thermal resistance junction-case diode 5 °C/W RthJA Thermal resistance junction-ambient 100 °C/W DocID028703 Rev 3 3/20 Electrical characteristics 2 STGD6M65DF2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4: Static characteristics Symbol V(BR)CES VCE(sat) VF Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Forward on-voltage Test conditions Min. VGE = 0 V, IC = 250 µA 650 Typ. 1.55 VGE = 15 V, IC = 6 A, TJ = 125 °C 1.9 VGE = 15 V, IC = 6 A, TJ = 175 °C 2.1 IF = 6 A 2.2 IF = 6 A, TJ = 125 °C 2.0 IF = 6 A, TJ = 175 °C 1.9 Gate threshold voltage VCE = VGE, IC = 250 µA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 6 A VGE(th) Max. 6 2.0 V V 7 V VGE = 0 V, VCE = 650 V 25 µA VCE = 0 V, VGE = ± 20 V ±250 µA Unit Table 5: Dynamic characteristics Symbol 4/20 Parameter Test conditions Min. Typ. Max. - 530 - - 31 - Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance - 11 - Qg Total gate charge - 21.2 - Qge Gate-emitter charge - 5.2 - Qgc Gate-collector charge VCE= 25 V, f = 1 MHz, VGE = 0 V VCC = 520 V, IC = 6 A, VGE = 15 V (see Figure 30: " Gate charge test circuit") - DocID028703 Rev 3 8.8 - pF nC STGD6M65DF2 Electrical characteristics Table 6: IGBT switching characteristics (inductive load) Symbol Typ. Max. Unit Turn-on delay time 15 - ns tr Current rise time 5.8 - ns (di/dt)on Turn-on current slope 828 - A/µs td(off) Turn-off-delay time 90 - ns 130 - ns td(on) tf Parameter Current fall time Test conditions Min. VCE = 400 V, IC = 6 A, VGE = 15 V, RG = 22 Ω (see Figure 29: " Test circuit for inductive load switching" ) Eon(1) Turn-on switching energy 0.036 - mJ Eoff(2) Turn-off switching energy 0.200 - mJ Ets Total switching energy 0.236 - mJ td(on) Turn-on delay time 17 - ns tr Current rise time 7 - ns (di/dt)on Turn-on current slope 685 - A/µs td(off) Turn-off-delay time 86 - ns 205 - ns tf Current fall time VCE = 400 V, IC = 6 A, VGE = 15 V, RG = 22 Ω TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching" ) Eon(1) Turn-on switching energy 0.064 - mJ Eoff(2) Turn-off switching energy 0.290 - mJ Ets Total switching energy 0.354 - mJ tsc Short-circuit withstand time VCC ≤ 400 V, VGE = 15 V, TJstart = 150 °C 6 - µs VCC ≤ 400 V, VGE = 13 V, TJstart = 150 °C 10 - µs Notes: (1)Turn-on switching energy includes reverse recovery of the diode. (2)Turn-off switching energy also includes the tail of the collector current. DocID028703 Rev 3 5/20 Electrical characteristics STGD6M65DF2 Table 7: Diode switching characteristics (inductive load) Symbol 6/20 Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time - 140 - ns Qrr Reverse recovery charge - 210 - nC Irrm Reverse recovery current - 6.6 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 430 - A/µs Err Reverse recovery energy - 16 - µJ trr Reverse recovery time - 200 - ns Qrr Reverse recovery charge - 473 - nC Irrm Reverse recovery current - 9.6 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 428 - A/µs Err Reverse recovery energy - 32 - µJ IF = 6 A, VR = 400 V, VGE = 15 V (see Figure 29: " Test circuit for inductive load switching") di/dt = 1000 A/µs IF = 6 A, VR = 400 V, VGE = 15 V TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching") di/dt = 1000 A/µs DocID028703 Rev 3 STGD6M65DF2 2.1 Electrical characteristics Electrical characteristics (curves) Figure 2: Power dissipation vs. case temperature Figure 3: Collector current vs. case temperature Figure 4: Output characteristics (TJ = 25 °C) Figure 5: Output characteristics (TJ = 175 °C) Figure 6: VCE(sat) vs. junction temperature Figure 7: VCE(sat) vs. collector current DocID028703 Rev 3 7/20 Electrical characteristics 8/20 STGD6M65DF2 Figure 8: Collector current vs. switching frequency Figure 9: Forward bias safe operating area Figure 10: Transfer characteristics Figure 11: Diode VF vs. forward current Figure 12: Normalized VGE(th) vs. junction temperature Figure 13: Normalized V(BR)CES vs. junction temperature DocID028703 Rev 3 STGD6M65DF2 Electrical characteristics Figure 14: Capacitance variations Figure 15: Gate charge vs. gate-emitter voltage Figure 16: Switching energy vs. collector current Figure 17: Switching energy vs. gate resistance Figure 18: Switching energy vs. temperature Figure 19: Switching energy vs. collector emitter voltage DocID028703 Rev 3 9/20 Electrical characteristics 10/20 STGD6M65DF2 Figure 20: Short-circuit time and current vs. VGE Figure 21: Switching times vs. collector current Figure 22: Switching times vs. gate resistance Figure 23: Reverse recovery current vs. diode current slope Figure 24: Reverse recovery time vs. diode current slope Figure 25: Reverse recovery charge vs. diode current slope DocID028703 Rev 3 STGD6M65DF2 Electrical characteristics Figure 26: Reverse recovery energy vs. diode current slope Figure 27: Thermal impedance for IGBT ZthTO2T_B K δ=0.5 0.2 0.1 10 0.05 -1 0.02 Zth=k Rthj-c δ=tp/t 0.01 Single pulse tp t -2 10 -5 10 10 -4 10 -3 10 -2 10 -1 tp (s) Figure 28: Thermal impedance for diode DocID028703 Rev 3 11/20 Test circuits 3 STGD6M65DF2 Test circuits Figure 29: Test circuit for inductive load switching Figure 30: Gate charge test circuit VCC C A A 12 V L=100 µH G B B 3.3 µF C G + 1 kΩ 100 nF E RG 47 kΩ VCC 1000 µF Vi ≤ VGMAX D.U.T E 2200 µF IG=CONST 2.7 kΩ 100 Ω D.U.T. VG 47 kΩ PW 1 kΩ AM01504v 1 AM01505v1 Figure 31: Switching waveform 12/20 DocID028703 Rev 3 Figure 32: Diode reverse recovery waveform STGD6M65DF2 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID028703 Rev 3 13/20 Package information 4.1 STGD6M65DF2 DPAK (TO-252) type A2 package information Figure 33: DPAK (TO-252) type A2 package outline 0068772_type-A2_rev21 14/20 DocID028703 Rev 3 STGD6M65DF2 Package information Table 8: DPAK (TO-252) type A2 mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 5.10 5.20 5.30 e 2.16 2.28 2.40 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 L1 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 5.10 5.25 6.60 1.00 0.20 0° DocID028703 Rev 3 8° 15/20 Package information STGD6M65DF2 Figure 34: DPAK (TO-252) recommended footprint (dimensions are in mm) 16/20 DocID028703 Rev 3 STGD6M65DF2 4.2 Package information DPAK (TO-252) packing information Figure 35: DPAK (TO-252) tape outline DocID028703 Rev 3 17/20 Package information STGD6M65DF2 Figure 36: DPAK (TO-252) reel outline Table 9: DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 B1 18/20 D 1.5 D1 1.5 E 1.65 F 1.6 Min. Max. 330 13.2 D 20.2 G 16.4 1.85 N 50 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID028703 Rev 3 18.4 22.4 STGD6M65DF2 5 Revision history Revision history Table 10: Document revision history Date Revision 30-Nov-2015 1 First release. 2 Modified: Table 4: "Static characteristics", Table 5: "Dynamic characteristics", Table 6: "IGBT switching characteristics (inductive load)" and Table 7: "Diode switching characteristics (inductive load)" Added: Section 2.1: "Electrical characteristics (curves)" Minor text changes 3 Updated: Table 2: "Absolute maximum ratings", Table 4: "Static characteristics", Table 6: "IGBT switching characteristics (inductive load)",Table 7: "Diode switching characteristics (inductive load)". Updated Figure 9: "Forward bias safe operating area", Figure 12: "Normalized VGE(th) vs. junction temperature", Figure 20: "Short-circuit time and current vs. VGE",Figure 23: "Reverse recovery current vs. diode current slope". Changed:Figure 25: "Reverse recovery charge vs. diode current slope", and Figure 26: "Reverse recovery energy vs. diode current slope". Document status promoted from preliminary to production data. 13-Jan-2016 04-Aug-2016 Changes DocID028703 Rev 3 19/20 STGD6M65DF2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved 20/20 DocID028703 Rev 3