STGD7NC60HT4

STGP7NC60H N-channel PowerMESH™ 600 V, 14 A very fast IGBT Datasheet - obsolete product Features Figure 1: Internal schematic diagram VCE(sat) max @ 25°C IC @ 100°C STGP7NC60H 600 V < 2.5 V 14 A u d o   Low on-voltage drop (VCE(sat)) High frequency operation up to 70 kHz   High frequency inverters SMPS and PFC in both hard switch and resonant topologies Motor drivers r P Applications e t e l o s b -O ct u d o VCES  (s) ) s ( ct Order code r P e Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. t e l o s b O Table 1: Device summary Order code Marking Package Packing STGP7NC60H GP7NC60H TO-220 Tube July 2016 DocID10855 Rev 3 This is information on a discontinued product. 1/14 www.st.com Contents STGP7NC60H Contents 1 Electrical ratings ............................................................................... 3 2 Electrical characteristics ................................................................. 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ...................................................................................... 9 4 Package information ...................................................................... 10 4.1 5 TO-220 type A package information................................................ 11 Revision history .............................................................................. 13 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 2/14 DocID10855 Rev 3 STGP7NC60H 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0) 600 V VGE Gate-emitter voltage ±20 V 25 A 14 A Continuous collector current at TC = 25 °C (1) IC Continuous collector current at TC = 100 °C (1) ICM(2) Collector current (pulsed) 50 A PTOT Continuous forward current at TC = 25 °C 80 W Tstg Storage temperature range TJ Operating junction temperature range - 55 to 150 °C ) s ( ct u d o Notes: (1)Calculated according to the iterative formula: r P e 𝑇𝐽𝑀𝐴𝑋 −𝑇𝐶 𝐼𝐶 (𝑇𝐶 ) = 𝑅 𝑇𝐻𝐽−𝐶 ×𝑉𝐶𝐸𝑆𝐴𝑇(MAX) (𝑇𝐽(𝑚𝑎𝑥) ×𝐼𝐶 (𝑇𝐶 )) (2)Pulse t e l o widht limited by maximum junction temperature. s b O Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 1.56 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W ) (s t c u d o r P e t e l o s b O DocID10855 Rev 3 3/14 Electrical characteristics 2 STGP7NC60H Electrical characteristics TC = 25 °C unless otherwise specified Table 4: Static characteristics Symbol Parameter Test conditions V(BR)CES Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation voltage VGE(th) Gate threshold voltage ICES Collector cut-off current IGES Gate-emitter leakage current Min. VGE = 0 V, IC = 1 mA Typ. V 1.85 VGE = 15 V, IC = 7 A, TJ = 125 °C 1.7 VCE = VGE, IC = 250 µA VGE = 0 V, VCE = 600 V, TC=125 °C (1) e t e ol (1) Defined by design, not subject to production test. u d o Pr s b O 2.5 V ) s ( ct 3.75 VGE = 0 V, VCE = 600 V Notes: Unit 600 VGE = 15 V, IC = 7 A VCE = 0 V, VGE = ±20 V Max. 5.75 V 10 µA 1 mA ±100 nA Max. Unit Table 5: Dynamic characteristics Symbol Forward transconductance Cies Input capacitance Coes Output capacitance Qg e t e l O ct du o r P Test conditions Min. VCE= 15 V, IC = 7 A VCE= 25 V, f = 1 MHz, VGE = 0 V Reverse transfer capacitance Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge ICL Turn-off SOA minimum current Vclamp = 480 V, Tj = 150 °C, RG = 10 Ω, VGE = 15 V Pulse duration= 300 μs, duty cycle 1.5% DocID10855 Rev 3 Typ. 4.30 S 720 pF 81 pF 17 pF 35 VCE = 390 V, IC = 7 A, VGE = 15 V (see Figure 18: "Gate charge test circuit") Notes: (1)Pulsed: 4/14 ) (s gfs (1) Cres o s b Parameter 7 48 nC 16 50 A STGP7NC60H Electrical characteristics Table 6: IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time - 18.5 ns tr(on) Turn-on rise time - 8.5 ns - 1060 A/µs - 27 ns - 72 ns - 60 ns - 95 125 µJ di/dt(on) Turn-on current slope tr(off) Turn-off rise time td(off) Turn-off delay time tf Fall time VCC = 390 V, IC = 7 A, VGE = 15 V, RG = 10 Ω (see Figure 16: "Ic vs frequency" and Figure 17: "Test circuit for inductive load switching") Eon (1) Turn-on switching energy Eoff (2) Turn-off switching energy - 115 150 µJ Total switching energy - 210 275 µJ td(on) Turn-on delay time - 18.5 tr(on) Turn-on rise time - 7 Ets di/dt(on) Turn-on current slope tr(off) Turn-off rise time td(off) Turn-off delay time tf Fall time Eon (1) Turn-on switching energy Eoff (2) Turn-off switching energy Ets Total switching energy ) (s Notes: c u d VCE = 390 V, IC = 7 A, VGE = 15 V, RG = 10 Ω TJ = 125 °C (see Figure 17: "Test circuit for inductive load switching") (1)Including the reverse recovery of the diode. (2)Including the tail of the collector current. e t e ol s b O o r P - ) s ( t 1000 ns ns A/µs 56 ns 116 ns - 105 ns - 140 µJ - 215 µJ - 355 µJ - t c u d o r P e t e l o s b O DocID10855 Rev 3 5/14 Electrical characteristics 2.2 STGP7NC60H Electrical characteristics (curves) Figure 3: Tranfer characteristics Figure 2: Output characteristics ) s ( ct u d o r P e Figure 4: Trasconductance Figure 5: Collector-emitter on voltage vs temperature t e l o ) (s s b O t c u d o r P e t e l o s b O 6/14 Figure 6: Collector-emitter on voltage vs collector current DocID10855 Rev 3 Figure 7: Normalized gate threshold vs temperature STGP7NC60H Electrical characteristics Figure 9: Gate charge vs gate-emitter voltage Figure 8: Normalized breakdown voltage vs temperature ) s ( ct u d o Figure 10: Capacitance variations Figure 11: Total switching energy vs temperature r P e t e l o ) (s s b O t c u d o r P e Figure 12: Total switching energy vs gate resistance t e l o Figure 13: Total switching energy vs collector current s b O DocID10855 Rev 3 7/14 Electrical characteristics STGP7NC60H Figure 14: Thermal impedance ) s ( ct u d o Figure 15: Turn-off SOA r P e t e l o ) (s s b O t c u d o r P e Figure 16: Ic vs frequency t e l o s b O 8/14 DocID10855 Rev 3 STGP7NC60H 3 Test circuits Test circuits Figure 17: Test circuit for inductive load switching Figure 18: Gate charge test circuit VCC 47 kΩ 12 V C A 1 kΩ A 100 nF L=100 µH G E B B 3.3 µF C G Vi ≤ VGMAX VCC 2200 µF D.U.T RG + 1000 µF IG=CONST 100 Ω D.U.T. 2.7 kΩ VG E 47 kΩ ) s ( ct PW 1 kΩ u d o AM01504v 1 AM01505v1 r P e Figure 19: Switching waveform t e l o ) (s s b O t c u d o r P e t e l o s b O DocID10855 Rev 3 9/14 Package information 4 STGP7NC60H Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 10/14 DocID10855 Rev 3 STGP7NC60H 4.1 Package information TO-220 type A package information Figure 20: TO-220 type A package outline ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O DocID10855 Rev 3 11/14 Package information STGP7NC60H Table 7: TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 F 1.23 H1 6.20 J1 2.40 L 13.00 L1 3.50 ) s ( ct 5.15 1.32 du ro P e t e l o L20 6.60 2.72 14.00 3.93 16.40 L30 øP 3.75 Q 2.65 ) (s s b O t c u d o r P e t e l o s b O 12/14 Max. DocID10855 Rev 3 28.90 3.85 2.95 STGP7NC60H 5 Revision history Revision history Table 8: Document revision history Date Revision Changes 20-Aug-2004 1 New datasheet. 09-Jun-2005 2 Modified title 3 The part number STGD7NC60HT4 has been moved to a separate datasheet. Modified: title, features and description. Modified: Table 2: "Absolute maximum ratings", Table 3: "Thermal data", Table 4: "Static characteristics", Table 5: "Dynamic characteristics" and Table 6: "IGBT switching characteristics (inductive load)" Updated: Section 5.1: "TO-220 type A package information". Minor text changes. 04-Jul-2016 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O DocID10855 Rev 3 13/14 STGP7NC60H IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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All other product or service names are the property of their respective owners. t e l o Information in this document supersedes and replaces information previously supplied in any prior versions of this document. s b O © 2016 STMicroelectronics – All rights reserved ) (s t c u d o r P e t e l o s b O 14/14 DocID10855 Rev 3