STGE50NB60HD

STGE50NB60HD N-CHANNEL 50A - 600V - ISOTOP PowerMESH™ IGBT TYPE STGY50NB60HD VCES VCE(sat) IC 600 V < 2.8 V 50 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized for high frequen-cy applications (up to 120kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. ) s ( ct ISOTOP c u d ) s t( o r P INTERNAL SCHEMATIC DIAGRAM e t le o s b O - APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS ■ SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ■ u d o r P e t e l o ABSOLUTE MAXIMUM RATINGS Symbol Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at TC = 25°C 100 A IC Collector Current (continuous) at TC = 100°C 50 A bs O ICM (
) PTOT Tstg Tj Parameter Collector Current (pulsed) 400 A Total Dissipation at TC = 25°C 300 W Derating Factor 2.4 W/°C –65 to 150 °C 150 °C Storage Temperature Max. Operating Junction Temperature (
) PULSE WIDTH LIMITED BY SAFE OPERATING AREA March 2003 1/8 STGE50NB60HD THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Rthc-h 0.416 °C/W Thermal Resistance Junction-ambient Max 30 °C/W Thermal Resistance Case-heatsink Typ 0.1 °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Collectro-Emitter Breakdown Voltage IC = 250 µA, VGE = 0 ICES Collector cut-off (VGE = 0) VCE = Max Rating, TC = 25 °C IGES Gate-Emitter Leakage Current (VCE = 0) VBR(CES) Typ. Max. 600 V 250 1000 µA VGE = ± 20V , VCE = 0 ± 100 nA Parameter Test Conditions VGE(th) Gate Threshold Voltage VCE = VGE, IC = 250µA VCE(sat) Collector-Emitter Saturation Voltage VGE = 15V, IC = 50 A Min. Test Conditions so VCE = 25 V , IC = 50 A Input Capacitance VCE = 25V, f = 1 MHz, VGE = 0 Coes Output Capacitance Cres Reverse Transfer Capacitance Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge ICL Latching Current ct u d o r P e t e l o d o r Typ. Max. 1.9 P e let Forward Transconductance (s) Min. b O - Unit V V V Unit 22 S 4500 pF 450 pF 90 VCE = 480V, IC = 50 A, VGE = 15V Vclamp = 480 V Tj = 150°C , RG = 10 Ω uc 2.8 VGE = 15V, IC = 50 A, Tj =125°C Parameter ) s t( Max. 5 2.3 Cies gfs Typ. 3 DYNAMIC Symbol µA VCE = Max Rating, TC = 125 °C ON (1) Symbol Unit pF 260 28 15 nC nC nC 200 A SWITCHING ON Symbol bs td(on) O 2/8 tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 480 V, IC = 50 A RG = 10Ω , VGE = 15 V VCC= 480 V, IC = 50 A, RG=10Ω VGE = 15 V, Tj = 125°C Min. Typ. Max. Unit 20 ns 70 ns 350 950 A/µs µJ STGE50NB60HD ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING OFF Symbol tc Parameter Test Conditions Min. Typ. Vcc = 480 V, IC = 50 A, RGE = 10 Ω , VGE = 15 V Cross-over Time Max. Unit 166 ns 48 ns tr(Voff) Off Voltage Rise Time td(off) Delay Time 326 ns Fall Time 90 ns Turn-off Switching Loss 2.1 mJ 3 mJ 270 ns 75 ns ns tf Eoff(**) Ets tc Total Switching Loss Vcc = 480 V, IC = 50 A, RGE = 10 Ω , VGE = 15 V Tj = 125 °C Cross-over Time tr(Voff) Off Voltage Rise Time td(off) Delay Time 340 Fall Time 200 ns Turn-off Switching Loss 2.9 mJ Total Switching Loss 3.85 tf Eoff(**) Ets c u d COLLECTOR-EMITTER DIODE Symbol Parameter Test Conditions P e let If Ifm Forward Current Forward Current pulsed Vf Forward On-Voltage If = 50 A If = 50 A , Tj = 125 °C Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 50 A ,VR = 100 V, Tj =125°C, di/dt = 100A/µs trr Qrr Irrm Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) ) s ( ct ro Min. o s b O - Typ. 1.65 2 135 500 7.5 ) s t( mJ Max. Unit 50 400 A A 2 V V ns nC A u d o r P e t e l o s b O 3/8 STGE50NB60HD Thermal Impedance Switching Off Safe Operating Area Output Characteristics Transfer Characteristics c u d e t le ) s ( ct u d o o s b O - Normalized Gate Threshold Voltage vs Temp. r P e t e l o s b O 4/8 Transconductance o r P ) s t( STGE50NB60HD Collector-Emitter On Voltage vs Temperature Gate-Charge vs Gate-Emitter Voltage Capacitance Variations Normalized Break-down Voltage vs Temp. c u d e t le ) s ( ct u d o Total Switching losses vs Gate Resistance r P e ) s t( o r P o s b O - Total Switching losses vs Temperature t e l o s b O 5/8 STGE50NB60HD Total Switching losses vs Ic Diode Forward Voltage c u d Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching e t le ) s ( ct u d o r P e t e l o s b O 6/8 ) s t( o s b O - o r P STGE50NB60HD ISOTOP MECHANICAL DATA mm DIM. MIN. TYP. MAX. MIN. A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 J 4.1 4.3 0.161 K 14.9 15.1 0.586 L 30.1 30.3 1.185 M 37.8 38.2 1.488 N 4 O 7.8 MAX. 1.503 0.322 D F B H r P e 1.193 A u d o N Pr od E ) s ( ct 0.307 o s b O - uc 0.594 e t le 8.2 ) s t( 0.169 0.157 O t e l o TYP. 0.157 G s b O inch J K C L M 7/8 STGE50NB60HD c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics s b O © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 8/8