STGB10H60DF, STGF10H60DF, STGP10H60DF
Datasheet
Trench gate field-stop 600 V, 10 A high speed H series IGBT
Features
TAB
3
1
D2 PAK
1
2
3
TO-220FP
TAB
1
2
3
•
•
•
•
•
•
High speed switching
Tight parameters distribution
Safe paralleling
Low thermal resistance
Short-circuit rated
Ultrafast soft recovery antiparallel diode
TO-220
Applications
C(2, TAB)
•
•
•
G(1)
Motor control
UPS
PFC
Description
E(3)
NG1E3C2T
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the H series of IGBTs, which represents
an optimum compromise between conduction and switching losses to maximize the
efficiency of high switching frequency converters. Furthermore, a slightly positive
VCE(sat) temperature coefficient and very tight parameter distribution result in safer
paralleling operation.
Product status link
STGB10H60DF
STGF10H60DF
STGP10H60DF
DS9880 - Rev 5 - January 2022
For further information contact your local STMicroelectronics sales office.
www.st.com
STGB10H60DF, STGF10H60DF, STGP10H60DF
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
VCES
IC
ICP (2)
VGE
Parameter
Value
D2PAK, TO-220
Collector-emitter voltage (VGE = 0 V)
TO-220FP
V
600
Continuous collector current at TC = 25 °C
20
20
Continuous collector current at TC = 100 °C
10
10 (1)
Pulsed collector current
40
40
Gate-emitter voltage
±20
Transient gate-emitter voltage
±30
Unit
(1)
A
A
V
Continuous forward current at TC = 25 °C
20
20 (1)
Continuous forward current at TC = 100 °C
10
10 (1)
IFP (2)
Pulsed forward current
40
40
A
VISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t = 1 s; Tc = 25 °C)
2.5
kV
PTOT
Total power dissipation at TC = 25 °C
30
W
TSTG
Storage temperature range
-55 to 150
Operating junction temperature range
-55 to 175
IF
TJ
115
A
°C
1. Limited by maximum junction temperature.
2. Pulse width limited by maximum junction temperature.
Table 2. Thermal data
Symbol
DS9880 - Rev 5
Parameter
Value
D2PAK, TO-220
TO-220FP
Unit
RthJC
Thermal resistance, junction-to-case IGBT
1.3
5
°C/W
RthJC
Thermal resistance, junction-to-case diode
2.78
6.25
°C/W
RthJA
Thermal resistance, junction-to-ambient
62.5
62.5
°C/W
page 2/25
STGB10H60DF, STGF10H60DF, STGP10H60DF
Electrical characteristics
2
Electrical characteristics
TC = 25 °C unless otherwise specified.
Table 3. Static
Symbol
Parameter
V(BR)CES
Collector-emitter
breakdown voltage
VCE(sat)
Collector-emitter
saturation voltage
Test conditions
VGE = 0 V, IC = 2 mA
Min.
Typ.
600
1.50
VGE = 15 V, IC = 10 A, TJ = 125 °C
1.65
VGE = 15 V, IC = 10 A, TJ = 175 °C
1.70
Gate threshold
voltage
VCE = VGE, IC = 250 μA
ICES
Collector cut-off
current
IGES
Gate-emitter leakage
current
5
Unit
V
VGE = 15 V, IC= 10 A
VGE(th)
Max.
6
1.95
V
7
V
VCE = 600 V, VGE = 0 V
25
μA
VGE = ±20 V, VCE = 0 V
±250
nA
Max.
Unit
-
pF
-
nC
Table 4. Dynamic
Symbol
DS9880 - Rev 5
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
Qge
Gate-emitter charge
Qgc
Gate-collector charge
Test conditions
Min.
Typ.
1300
VCE = 25 V, f = 1 MHz, VGE = 0 V
-
60
30
57
VCC = 480 V, IC = 10 A, VGE = 0 to 15 V
(see Figure 35. Gate charge test circuit)
-
8
27
page 3/25
STGB10H60DF, STGF10H60DF, STGP10H60DF
Electrical characteristics
Table 5. Switching characteristics (inductive load)
Symbol
td(on)
Parameter
Test conditions
Min.
Typ.
Turn-on delay time
VCE = 400 V, IC = 10 A, RG = 10 Ω,
19.5
Current rise time
VGE = 15 V
6.9
Turn-on current slope
(see Figure 34. Test circuit for inductive
load switching and Figure 36. Switching
waveform)
Turn-on delay time
VCE = 400 V, IC = 10 A, RG = 10 Ω,
Current rise time
VGE = 15 V, TJ = 175 °C
Turn-on current slope
(see Figure 34. Test circuit for inductive
load switching and Figure 36. Switching
waveform)
1176
tr(Voff)
Off voltage rise time
VCE = 400 V, IC = 10 A, RG = 10 Ω,
19.6
td(off)
Turn-off delay time
VGE = 15 V
103
Current fall time
(see Figure 34. Test circuit for inductive
load switching and Figure 36. Switching
waveform)
73
tr(Voff)
Off voltage rise time
VCE = 400 V, IC = 10 A, RG = 10 Ω,
td(off)
Turn-off delay time
VGE = 15 V, TJ = 175 °C
104
tf
Current fall time
(see Figure 34. Test circuit for inductive
load switching and Figure 36. Switching
waveform)
110
tsc
Short-circuit withstand
VCC ≤ 360 V, VGE = 15 V, RG = 10 Ω
time
tr
(di/dt)on
td(on)
tr
(di/dt)on
tf
Max.
ns
1170
-
20
A/μs
ns
6.8
-
28
Unit
A/μs
-
ns
3
5
-
μs
Min.
Typ.
Max.
Unit
-
μJ
Table 6. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Eon (1)
Turn-on switching
energy
VCE = 400 V, IC = 10 A, RG = 10 Ω,
83
Eoff (2)
Turn-off switching
energy
VGE = 15 V
(see Figure 34. Test circuit for inductive load
switching)
140
Ets
Total switching energy
-
223
Eon(1)
Turn-on switching
energy
VCE = 400 V, IC = 10 A, RG = 10 Ω,
148
Eoff (2)
Turn-off switching
energy
VGE = 15 V, TJ = 175 °C
(see Figure 34. Test circuit for inductive load
switching)
214
Ets
Total switching energy
362
1. Including the reverse recovery of the diode.
2. Including the tail of the collector current.
DS9880 - Rev 5
page 4/25
STGB10H60DF, STGF10H60DF, STGP10H60DF
Electrical characteristics
Table 7. Collector-emitter diode
Symbol
VF
Forward on-voltage
trr
Reverse recovery
time
Qrr
Reverse recovery
charge
Irrm
Reverse recovery
current
trr
Reverse recovery
time
Qrr
Reverse recovery
charge
Irrm
DS9880 - Rev 5
Parameter
Reverse recovery
current
Test conditions
IF = 10 A
IF = 10 A, TJ = 175 °C
Min.
-
Typ.
Max.
1.7
2.2
1.3
Unit
V
107
ns
120
nC
2.24
A
161
ns
362
nC
4.5
A
Vr = 60 V; IF = 10 A, diF/dt = 100 A / μs
(see Figure 37. Diode reverse recovery
waveform)
Vr = 60 V; IF = 10 A, diF/dt = 100 A / μs
TJ = 175 °C
(see Figure 37. Diode reverse recovery
waveform)
page 5/25
STGB10H60DF, STGF10H60DF, STGP10H60DF
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Power dissipation vs case temperature for
D2PAK and TO-220
GIPD281020131339FSR
Ptot
(W)
140
Figure 2. Collector current vs case temperature for D2PAK
and TO-220
GIP D230420191104MT
IC
(A)
20
120
100
15
80
10
60
40
20
0
0
VGE≥ 15V, T J≤ 175 °C
50
25
75
100 125 150 175 TC(°C)
Figure 3. Power dissipation vs case temperature for
TO-220FP
GIPD281020131351FSR
5
VGE ≥ 15V, TJ ≤ 175 °C
0
0
25
50
75
100 125 150 175 TC (°C)
Figure 4. Collector current vs case temperature for
TO-220FP
GIPD281020131401FSR
IC
(A)
15
10
5
VGE ≥ 15V, T J ≤ 175 °C
0
0
Figure 5. Output characteristics (TJ = 25°C)
IC
(A)
GIPD281020131405FSR
11V
VGE=15V
50
100
150
TC(°C)
Figure 6. Output characteristics (TJ = 175°C)
IC
(A)
GIPD281020131411FSR
11V
VGE=15V
13V
30
30
9V
9V
20
20
10
10
7V
0
0
DS9880 - Rev 5
1
2
3
4
VCE(V)
0
0
1
2
3
4
VCE(V)
page 6/25
STGB10H60DF, STGF10H60DF, STGP10H60DF
Electrical characteristics (curves)
Figure 7. VCE(sat) vs junction temperature
GIP D281020131418FS R
VCE(s a t)
GE =
IC = 20A
15V
Figure 8. VCE(sat) vs collector current
VCE(sat)
(V)
GADG130620191022VCEC
TJ = 175°C
2.2
VGE = 15 V
2.0
TJ = 25°C
1.8
1.8
IC = 10A
1.6
1.6
1.4
1.4
IC
1.2
1.0
-50
0.8
0
TJ (°C
Figure 9. Collector current vs switching frequency for
D2PAK and TO-220
IC
(A)
4
8
12
TC = 80°C
20
12
TC = 80°C
TC = 100°C
8
20
10
4
Rectangular current shape
(duty cycle = 0.5, VCC = 400 V,
RG = 4.7Ω, VGE = 0/15 V , TJ = 175 °C)
0
10 0
10 1
f (kHz)
10 2
Figure 11. Forward bias safe operating area for D2PAK
and TO-220
GIPD281020131452FSR
IC
(A)
Rectangular current shape
(duty cycle = 0.5, VCC = 400 V,
RG = 4.7Ω, VGE = 0/15 V , TJ = 175 °C)
0
10 0
10 1
f (kHz)
10 2
Figure 12. Forward bias safe operating area for TO-220FP
GIPD281020131505FSR
IC
(A)
10
10
10 µs
10 µs
100 µs
100 µs
1
0.1
DS9880 - Rev 5
IC (A)
GADG130620191023CCS
16
TC = 100°C
16
Figure 10. Collector current vs switching frequency for
TO-220FP
IC
(A)
GADG130620191139CCS
40
30
TJ = -40°C
1.2
Tj≤175 °C, Tc= 25°C
VGE = 15 V
single pulse
1
10
100
1 ms
0.1
VCE(V)
Tj≤175 °C, Tc= 25°C
VGE = 15 V
single pulse
1
1
10
100
1 ms
VCE(V)
page 7/25
STGB10H60DF, STGF10H60DF, STGP10H60DF
Electrical characteristics (curves)
Figure 14. Diode VF vs forward current
Figure 13. Transfer characteristics
GIPD281020131513FSR
IC
(A)
35
VF
(V)
GADG130620191024DVF
TJ = 40 °C
VCE=5V
2.0
30
25
TJ = 25 °C
1.6
20
TJ=175°C
10
0.8
TJ=25°C
5
0
6
TJ = 175 °C
1.2
15
TJ=-40°C
8
7
10
9
VGE(V)
Figure 15. Normalized VGE(th) vs junction temperature
GIPD281020131600FSR
VGE(th)
(norm)
1.1
IC= 1mA
VCE= VGE
0.4
0
4
8
12
16
20
IF (A)
Figure 16. Normalized V(BR)CES vs junction temperature
V(BR)CES
(Norm.)
GADG130620191025NVBR
1.10
1.0
IC = 2mA
1.05
0.9
1.00
0.8
0.95
0.7
0.6
-50
0
50
100
150
TJ(°C)
Figure 17. Capacitance variation
C
(pF)
0
50
100
150
TJ (°C)
Figure 18. Gate charge vs gate-emitter voltage
GADG130620191026CVR
GIPD281020131606FSR
VGE
(V)
CIES
10 3
0.90
-50
IC= 10A
IGE= 1mA
VCC= 480V
16
12
10 2
8
10 0
10 -1
DS9880 - Rev 5
COES
f = 1MHZ
10 1
CRES
4
0
10 0
10 1
10 2
VCE (V)
0
20
40
60
Qg (nC)
page 8/25
STGB10H60DF, STGF10H60DF, STGP10H60DF
Electrical characteristics (curves)
Figure 19. Switching energy vs collector current
E
(µJ)
GADG130620191055SLC
VCC = 400V, VGE = 15V,
RG = 10Ω, TJ = 175°C
360
Figure 20. Switching energy vs gate resistance
GIPD281020131618FSR
E
(µJ)
Eoff
VCC = 400 V, V GE = 15 V,
IC = 10 A, TJ = 175 °C
260
300
Eon
240
EOFF
220
180
180
120
EON
140
60
100
0
0
4
8
12
16
20
IC (A)
Figure 21. Switching energy vs temperature
0
10
20
30
E
(µJ)
VCC= 400V, V GE= 15V,
RG= 10Ω, IC= 10A
250
200
EOFF
RG(Ω)
Figure 22. Switching energy vs collector-emitter voltage
GIPD281020131623FSR
E
(µJ)
40
GIPD281020131630FSR
TJ= 175°C, VGE= 15V,
RG= 10Ω, IC= 10A
200
EOFF
150
150
EON
100
EON
100
50
50
0
-50
0
50
100
150
Figure 23. Short circuit time and current vs VGE
GIPD281020131634FSR
ISC(A)
tsc (µs)
VCC= 360V, RG= 10W
0
200
TJ(°C)
350
400
450
VCE(V)
t
(ns)
GIPD281020131641FSR
TJ= 175°C, VGE= 15V,
RG= 10Ω, VCC= 400V
200
tSC
12
300
Figure 24. Switching times vs collector current
ISC
14
250
tf
t doff
10
150
100
tr
8
100
t don
6
4
DS9880 - Rev 5
10
11
12
13
14
50
VGE(V)
10
0
4
8
12
16
IC(A)
page 9/25
STGB10H60DF, STGF10H60DF, STGP10H60DF
Electrical characteristics (curves)
Figure 25. Switching times vs gate resistance
Figure 26. Reverse recovery current vs diode current
slope
GIPD281020131655FSR
t
(ns)
TJ= 175°C, VGE= 15V,
IC= 10A, VCC= 400V
IF = 10A, Vr = 400V
20
t doff
tf
100
GIPD281020131713FSR
Irm
(A)
TJ =175°C
16
12
tr
t don
10
8
TJ =25°C
4
1
0
10
20
30
40
0
0
RG(Ω)
Figure 27. Reverse recovery time vs diode current slope
200
400
Figure 28. Reverse recovery charge vs diode current
slope
GIPD281020131720FSR
t rr
(µs)
GIPD281020131724FSR
Qrr
(nC)
IF = 10A, Vr = 400V
160
500
120
400
IF = 10A, Vr = 400V
TJ =175°C
300
TJ =175°C
80
800 di/dt(A/ µs)
600
TJ =25°C
200
40
0
0
100
TJ =25°C
200
400
600
Figure 29. Reverse recovery energy vs diode current
slope
GIPD281020131728FSR
Err
(µJ)
0
0
800 di/dt(A/ µs)
200
400
800 di/dt(A/ µs)
600
Figure 30. Normalized transient thermal impedance for
TO-220 and D2PAK (IGBT)
ZthTO2T_B
K
δ=0.5
IF = 10A, Vr = 400V
140
0.2
120
TJ =175°C
0.1
100
0.05
-1
10
0.02
80
TJ =25°C
60
0.01
40
20
DS9880 - Rev 5
Zth = k*RthJC
δ = tp/t
Single pulse
tp
0
200
400
600
800 di/dt(A/ µs)
t
-2
10 -5
10
-4
10
-3
10
-2
10
-1
10
tp (s)
page 10/25
STGB10H60DF, STGF10H60DF, STGP10H60DF
Electrical characteristics (curves)
Figure 31. Normalized transient thermal impedance for
TO-220FP (IGBT)
Figure 32. Normalized transient thermal impedance for
TO-220 and D2PAK (diode)
ZthTOF2T_B
10-1
Zth
Zth= k*R
k R thj-c
thj-C
δδ==tptp/ Ƭ
/Ƭ
10-2
tpp
10-3
10-5
Zth = k*RthJC
δ = tp/t
ƬƬ
tp
t
10-4
10-3
10-2
10-1
100
tp (s)
Figure 33. Normalized transient thermal impedance for TO-220FP (diode)
K
GC20940
10-1
10-2
10-3
10-4
DS9880 - Rev 5
10-3
10-2
10-1
100
tp (s)
page 11/25
STGB10H60DF, STGF10H60DF, STGP10H60DF
Test circuits
3
Test circuits
Figure 34. Test circuit for inductive load switching
C
A
Figure 35. Gate charge test circuit
A
k
L=100 µH
G
E
B
B
3.3
µF
C
G
+
k
RG
1000
µF
VCC
k
D.U.T
k
E
k
k
AM01505v1
AM01504v1
Figure 36. Switching waveform
Figure 37. Diode reverse recovery waveform
90%
10%
VG
90%
VCE
10%
tr(Voff)
tcross
25
90%
IC
td(on)
ton
td(off)
tr(Ion)
10%
tf
toff
AM01506v1
DS9880 - Rev 5
page 12/25
STGB10H60DF, STGF10H60DF, STGP10H60DF
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
4.1
D²PAK (TO-263) type A2 package information
Figure 38. D²PAK (TO-263) type A2 package outline
0079457_A2_26
DS9880 - Rev 5
page 13/25
STGB10H60DF, STGF10H60DF, STGP10H60DF
D²PAK (TO-263) type A2 package information
Table 8. D²PAK (TO-263) type A2 package mechanical data
Dim.
mm
Min.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10.00
E1
8.70
8.90
9.10
E2
7.30
7.50
7.70
e
10.40
2.54
e1
4.88
5.28
H
15.00
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
DS9880 - Rev 5
Typ.
0.40
0°
8°
page 14/25
STGB10H60DF, STGF10H60DF, STGP10H60DF
D²PAK (TO-263) type A2 package information
Figure 39. D²PAK (TO-263) recommended footprint (dimensions are in mm)
0079457_Rev26_footprint
DS9880 - Rev 5
page 15/25
STGB10H60DF, STGF10H60DF, STGP10H60DF
D²PAK packing information
4.2
D²PAK packing information
Figure 40. D²PAK tape outline
DS9880 - Rev 5
page 16/25
STGB10H60DF, STGF10H60DF, STGP10H60DF
D²PAK packing information
Figure 41. D²PAK reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
2.5mm min.width
Full radius
AM06038v1
Table 9. D²PAK tape and reel mechanical data
Tape
Dim.
DS9880 - Rev 5
Reel
mm
mm
Dim.
Min.
Max.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
330
13.2
26.4
30.4
page 17/25
STGB10H60DF, STGF10H60DF, STGP10H60DF
TO-220FP package information
4.3
TO-220FP package information
Figure 42. TO-220FP package outline
7012510_Rev_13_B
DS9880 - Rev 5
page 18/25
STGB10H60DF, STGF10H60DF, STGP10H60DF
TO-220FP package information
Table 10. TO-220FP package mechanical data
Dim.
mm
Min.
Max.
A
4.40
4.60
B
2.50
2.70
D
2.50
2.75
E
0.45
0.70
F
0.75
1.00
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.20
G1
2.40
2.70
H
10.00
10.40
L2
DS9880 - Rev 5
Typ.
16.00
L3
28.60
30.60
L4
9.80
10.60
L5
2.90
3.60
L6
15.90
16.40
L7
9.00
9.30
Dia
3.00
3.20
page 19/25
STGB10H60DF, STGF10H60DF, STGP10H60DF
TO-220 type A package information
4.4
TO-220 type A package information
Figure 43. TO-220 type A package outline
0015988_typeA_Rev_23
DS9880 - Rev 5
page 20/25
STGB10H60DF, STGF10H60DF, STGP10H60DF
TO-220 type A package information
Table 11. TO-220 type A package mechanical data
Dim.
mm
Min.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.55
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10.00
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13.00
14.00
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
Slug flatness
DS9880 - Rev 5
Typ.
0.03
0.10
page 21/25
STGB10H60DF, STGF10H60DF, STGP10H60DF
Ordering information
5
Ordering information
Table 12. Order codes
DS9880 - Rev 5
Order code
Marking
Package
Packing
STGB10H60DF
GB10H60DF
D2PAK
Tape and reel
STGF10H60DF
GF10H60DF
TO-220FP
STGP10H60DF
GP10H60DF
TO-220
Tube
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STGB10H60DF, STGF10H60DF, STGP10H60DF
Revision history
Table 13. Document revision history
Date
Version
12-Aug-2013
1
Changes
Initial release.
Document status promoted from preliminary to production data.
31-Oct-2013
2
Inserted Section 2.1: Electrical characteristics (curves).
Minor text changes.
Updated title, applications and description in cover page.
20-Jun-2019
3
Added Section 5 Ordering information.
Updated Section 2.1 Electrical characteristics (curves).
Minor text changes.
05-Mar-2020
4
Updated Table 3. Static and Table 4. Dynamic.
Minor text changes.
Modified Figure 30. Normalized transient thermal impedance for TO-220 and D2PAK (IGBT)
and Figure 32. Normalized transient thermal impedance for TO-220 and D2PAK (diode).
21-Jan-2022
5
Added Figure 31. Normalized transient thermal impedance for TO-220FP (IGBT) and
Figure 33. Normalized transient thermal impedance for TO-220FP (diode).
Minor text changes.
DS9880 - Rev 5
page 23/25
STGB10H60DF, STGF10H60DF, STGP10H60DF
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
5
4.1
D²PAK (TO-263) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.2
D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.3
TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.4
TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
DS9880 - Rev 5
page 24/25
STGB10H60DF, STGF10H60DF, STGP10H60DF
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2022 STMicroelectronics – All rights reserved
DS9880 - Rev 5
page 25/25