STGF10NC60SD

STGD10NC60SD STGF10NC60SD 10 A, 600 V fast IGBT Features Optimized performance for medium operating frequencies up to 5 kHz in hard switching ■ Low on-voltage drop (VCE(sat)) ■ Very soft ultra fast antiparallel diode TA B ■ 3 Application ■ 3 1 Motor drive DPAK 1 2 TO-220FP Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. Figure 1. Internal schematic diagram Device summary Order codes Marking Package Packaging STGD10NC60SDT4 GD10NC60SD DPAK Tape and reel STGF10NC60SD GF10NC60SD TO-220FP Tube June 2010 Doc ID 15847 Rev 2 1/16 www.st.com 16 Contents STGD10NC60SD, STGF10NC60SD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 ............................................... 9 Doc ID 15847 Rev 2 STGD10NC60SD, STGF10NC60SD 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol DPAK VCES IC (1) IC(1) Collector-emitter voltage (VGE = 0) TO-220FP 600 V Continuous collector current at TC = 25°C 18 10 A Continuous collector current at TC = 100°C 10 5 A ICL (2) Turn-off latching current 14 A ICP (3) Pulsed collector current 25 A Diode RMS forward current at TC=25 °C 10 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 20 A VGE Gate-emitter voltage ±20 V PTOT Total dissipation at TC = 25 °C VISO Isolation withstand voltage (RMS) from all three leads to external heat sink (t = 1 sec; TC = 25 °C) IF Tj 1. Unit Parameter 60 Operating junction temperature 25 W 2500 V -55 to 150 °C Calculated according to the iterative formula: T j ( max ) – T C I C ( T C ) = --------------------------------------------------------------------------------------------------------R thj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) ) 2. Vclamp = 80%,(VCES), Tj =150 °C, RG = 10 Ω, VGE = 15 V. 3. Pulse width limited by maximum junction temperature and turn-off within RBSOA. Table 3. Thermal data Value Symbol Parameter Thermal resistance junction-case IGBT Rthj-case Rthj-amb Unit DPAK TO-220FP 2.08 5 Thermal resistance junction-case diode Thermal resistance junction-ambient Doc ID 15847 Rev 2 4.5 100 °C/W °C/W 62.5 °C/W 3/16 Electrical characteristics 2 STGD10NC60SD, STGF10NC60SD Electrical characteristics (TJ=25°C unless otherwise specified) Table 4. Symbol Parameter Test conditions V(BR)CES Collector-emitter breakdown IC= 1 mA voltage (VGE= 0) VCE(sat) Collector-emitter saturation voltage VGE= 15 V, IC= 5 A VGE= 15 V, IC= 5 A, TJ= 125 °C VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA ICES Collector cut-off current (VGE=0) IGES gfs Table 5. Symbol 4/16 Static Min. Typ. Max. Unit 600 V 1.45 1.45 1.65 V V 5.75 V VCE= 600 V VCE=600 V, TJ=125 °C 150 1 µA mA Gate-emitter leakage (VCE=0) VGE= ±20 V ±100 nA Forward transconductance VCE = 15 V , IC = 5 A 3.75 3.5 S Dynamic Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE= 0 - 365 44 8 - pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 480 V, IC = 5 A, VGE = 15 V Figure 18 - 18 8 3.5 - nC nC nC Doc ID 15847 Rev 2 STGD10NC60SD, STGF10NC60SD Table 6. Electrical characteristics Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope td(on) tr (di/dt)on VCC = 390 V, IC = 5 A RG= 10 Ω, VGE= 15 V, Figure 19 - 19 4 1330 - ns ns A/µs Turn-on delay time Current rise time Turn-on current slope VCC = 390 V, IC = 5 A RG= 10 Ω, VGE= 15 V, TJ= 125°C Figure 19 - 18 4.5 1000 - ns ns A/µs tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time Vcc = 390 V, IC = 5 A, RG = 10 Ω, VGE = 15 V, Figure 19 - 100 160 205 - ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time Vcc = 390 V, IC = 5 A, RG = 10 Ω, VGE = 15 V, TJ = 125°C Figure 19 - 165 250 310 - ns ns ns Min. Typ. Max. Unit Table 7. Symbol Max. Unit Switching energy (inductive load) Parameter Test conditions Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 480 V, IC = 5 A RG= 10 Ω, VGE= 15 V, Figure 17 - 60 340 400 - µJ µJ µJ Eon (1) Eoff(2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 480 V, IC = 5 A RG= 10 Ω, VGE= 15 V, TJ= 125°C Figure 17 - 90 540 630 - µJ µJ µJ 1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 17. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same temperature. 2. Turn-off losses included also include also the tail of the collector current. Table 8. Symbol Collector-emitter diode Parameter Test conditions Min. Typ. Max. Unit - 2 1.65 2.45 V V ns nC A ns nC A VF Forward on-voltage IF=5 A IF=5 A, TJ=125 °C trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF=5 A, VR=40 V, di/dt=100 A/µs Figure 20 - 22 14 1.3 trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF=5 A, VR=40 V, TJ=125 °C, di/dt=100 A/µs Figure 20 - 34 35 2.1 Doc ID 15847 Rev 2 5/16 Electrical characteristics STGD10NC60SD, STGF10NC60SD 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. AM07263v1 30 IC (A) AM07262v1 IC 30 (A) Transfer characteristics VGE = 15 V VGE = 11 V 25 20 25 20 VGE = 10 V VCE = 10 V 15 15 VGE = 9 V 10 10 VGE = 8 V 5 5 VGE = 7 V 0 0 0 Figure 4. 2 4 6 8 VCE 10 (V) Collector-emitter on voltage vs collector current AM07264v1 VCE(sat) 3 (V) 0 Figure 5. 4 TJ = 25 ºC 6 8 10 VGE 12 (V) Collector-emitter on voltage vs temperature AM08265v1 VCE(sat) 2 (V) TJ = 150 ºC 2.5 2 IC = 10 A 1.8 VGE = 15 V 1.6 2 TJ = -50 ºC IC = 5 A 1.4 1.5 VGE = 15 V 1.2 1 1 0.5 0 Figure 6. IC = 2.5 A 4 8 12 16 IC 20 (A) Normalized breakdown voltage vs temperature Figure 7. 0 50 100 TJ (ºC) Normalized gate threshold vs temperature VGE(th) (norm) AM07266v1 V1.15 CES (norm) -50 AM07267V1 1.1 1.1 IC = 1 mA 1 1.05 0.9 1 0.8 0.95 0.7 0.6 0.9 -50 6/16 VGE = VCE IC = 250 µA 0 50 100 TJ 150 (ºC) Doc ID 15847 Rev 2 -50 0 50 100 TJ (°C) STGD10NC60SD, STGF10NC60SD Figure 8. Electrical characteristics Capacitance variations Figure 9. AM07269v1 Gate charge vs gate-emitter voltage AM07268v1 VGE (V) 20 C (pF) f = 1 MHz VGE = 0 VCC = 480 V IC = 5 A 16 600 12 Cies 400 8 200 4 Coes Cres 0 0 0 10 20 30 VCE 40 Figure 10. Switching losses vs temperature 0 12 16 QG (nC) AM07271v1 E 600 (µJ) 500 500 EOFF 400 8 Figure 11. Switching losses vs gate resistance AM07270v1 E600 (µJ) 4 EOFF 400 300 VCC = 480 V, VGE= 15 V I C = 5 A, TJ = 125 °C 300 VCC = 480 V, VGE= 15 V I C = 5 A, RG =10 Ω 200 200 EON EON 100 100 0 0 25 50 75 100 TJ (°C) Figure 12. Switching losses vs collector current 0 40 80 120 160 RG (Ω) 200 Figure 13. Diode forward on voltage AM07272v1 E (µJ) )&-! VCC = 480 V, VGE= 15 V RG =10 Ω, TJ = 125 °C 500 400                 EOFF 300 200 EON 100 0 1 2 3 4 IC (A) 4J # MAXIMUMVALUES 4J # MAXIMUMVALUES 4J # TYPICALVALUES 6&-6  Doc ID 15847 Rev 2      7/16 Electrical characteristics STGD10NC60SD, STGF10NC60SD Figure 14. Thermal impedance for DPAK + Figure 15. Thermal impedance for TO-220FP + K K       ?YM " P 7YM/ªH K " YU [   ?YM " P 7YM/ªH K " YU [           YU [ 3INGLEPULSE          TP S    Figure 16. Turn-off SOA AM07273V1 IC (A) 10 1 0.1 0.01 0.1 8/16 1 10   100 VCE(V) Doc ID 15847 Rev 2 YU [ 3INGLEPULSE         TP S STGD10NC60SD, STGF10NC60SD 3 Test circuits Test circuits Figure 17. Test circuit for inductive load switching Figure 18. Gate charge test circuit Figure 19. Switching waveforms Figure 20. Diode recovery time waveform Doc ID 15847 Rev 2 9/16 Package mechanical data 4 STGD10NC60SD, STGF10NC60SD Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/16 Doc ID 15847 Rev 2 STGD10NC60SD, STGF10NC60SD Package mechanical data TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 1 R V2 0.20 8o 0o 0068772_G Doc ID 15847 Rev 2 11/16 Package mechanical data Table 9. STGD10NC60SD, STGF10NC60SD TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 12/16 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 15847 Rev 2 STGD10NC60SD, STGF10NC60SD Package mechanical data Figure 21. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 15847 Rev 2 13/16 Packaging mechanical data 5 STGD10NC60SD, STGF10NC60SD Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 14/16 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 Doc ID 15847 Rev 2 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STGD10NC60SD, STGF10NC60SD 6 Revision history Revision history Table 10. Document revision history Date Revision Changes 06-Jul-2009 1 Initial release 14-Jun-2010 2 Inserted Section 2.1: Electrical characteristics (curves). Doc ID 15847 Rev 2 15/16 STGD10NC60SD, STGF10NC60SD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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