STGF14N60D

STGF14N60D STGP14N60D 14 A - 600 V - short circuit rugged IGBT Preliminary Data Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution 3 ■ Ultra fast soft recovery antiparallel diode ■ Short circuit rugged 1 3 2 1 TO-220 TO-220FP c u d Applications ■ Motor drives ■ High frequency inverters ■ SMPS and PFC in both hard switch and resonant topologies Description e t le Figure 1. 2 ) s t( o r P Internal schematic diagram o s b O - This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. ) s ( ct u d o r P e t e l o bs Table 1. O Device summary Order codes Marking Package Packaging STGF14N60D GF14N60D TO-220FP Tube STGP14N60D GP14N60D TO-220 Tube February 2009 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/11 www.st.com 11 Contents STGF14N60D, STGP14N60D Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 ................................................ 6 c u d e t le ) s ( ct u d o r P e t e l o s b O 2/11 o s b O - o r P ) s t( STGF14N60D, STGP14N60D 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 VCES IC (1) IC(1) TO-220FP Collector-emitter voltage (VGE = 0) 600 V Collector current (continuous) at TC = 25 °C 25 11 A Collector current (continuous) at TC = 100 °C 14 7 A ICL (2) Turn-off latching current 50 A ICP (3) Pulsed collector current 50 A Gate-emitter voltage ±20 V Diode RMS forward current at TC = 25 °C 20 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 55 ) s t( VISO Insulation withstand voltage (RMS) from all three leads to external hea sink ( t=1 s; TC = 25 °C) -- PTOT Total dissipation at TC = 25 °C 95 tscw Short circuit withstand time, VCE = 0.5V(BR)CES, TC = 125 °C, RG = 10 Ω, VGE = 15 V VGE IF Tj 1. b O - Operating junction temperature c u d ro P e let so A A 2500 V 33 W 5 µs – 40 to 175 °C Calculated according to the iterative formula: ) s ( ct T j ( max ) – T C I C ( T C ) = --------------------------------------------------------------------------------------------------------R thj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) ) u d o 2. Vclamp = 80% of VCES, Tj =175 °C, RG=10 Ω, VGE=15 V 3. Pulse width limited by max. junction temperature allowed r P e Table 3. s b O t e l o Symbol Thermal resistance Value Parameter Unit TO-220 TO-220FP Rthj-case Thermal resistance junction-case IGBT max. 1.56 4.5 °C/W Rthj-case Thermal resistance junction-case diode max. 2.2 5.6 °C/W Rthj-amb Thermal resistance junction-ambient max. 62.5 °C/W 3/11 Electrical characteristics 2 STGF14N60D, STGP14N60D Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. Symbol Static Parameter Test conditions Min. V(BR)CES Collector-emitter breakdown IC= 1 mA voltage (VGE= 0) VCE(sat) Collector-emitter saturation voltage VGE= 15 V, IC= 7 A VGE= 15 V, IC= 7 A, TC= 125 °C VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA IGES Gate-emitter leakage current (VCE = 0) ICES gfs (1) 600 Symbol 4/11 V V V VGE= ±20 V, TC= 125 °C ±100 nA Collector cut-off current (VGE = 0) VCE= 600 V VCE= 600 V, TC= 125 °C Forward transconductance VCE = 15 V , IC = 7 A ) s t( 150 1 Parameter Input capacitance Output capacitance Reverse transfer capacitance Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge t c u (s) uc 3.2 µA mA S d o r P e let Dynamic d o r P e s b O 2.1 1.8 6.5 Cies Coes Cres t e l o V 4.5 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 5. Typ. Max. Unit Test conditions so Min. Typ. Max. Unit VCE = 25 V, f = 1 MHz, VGE= 0 TBD TBD TBD pF pF pF VCE = 390 V, IC = 7 A, VGE = 15 V (see Figure 3) TBD TBD TBD nC nC nC b O - STGF14N60D, STGP14N60D Table 6. Electrical characteristics Switching on/off (inductive load) Symbol Parameter Test conditions td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope td(on) tr (di/dt)on Typ. Max. Unit VCC = 390 V, IC = 7 A RG= 10 Ω, VGE= 15 V, (see Figure 2) TBD TBD TBD ns ns A/µs Turn-on delay time Current rise time Turn-on current slope VCC = 390 V, IC = 7 A RG= 10 Ω, VGE= 15 V, TC= 125 °C (see Figure 2) TBD TBD TBD ns ns A/µs tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 390 V, IC = 7 A, RGE = 10 Ω, VGE = 15 V (see Figure 2) TBD TBD TBD ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCC = 390 V, IC = 7 A, RGE = 10 Ω, VGE = 15 V TC= 125 °C (see Figure 2) TBD TBD TBD ns ns ns Table 7. Switching energy (inductive load) Symbol Parameter Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses ) s ( ct Test conditions e t le VCC = 390 V, IC = 7 A RG= 10 Ω, VGE= 15 V, (see Figure 2) Min. o r P c u d Min o s b O - VCC = 390 V, IC = 7 A RG= 10 Ω, VGE= 15 V, TC= 125 °C (see Figure 2) Typ. ) s t( Max Unit TBD TBD TBD µJ µJ µJ TBD TBD TBD µJ µJ µJ 1. Eon is the turn-on losses when a typical diode is used in the test circuit. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and DIODE are at the same temperature (25°C and 125°C) u d o 2. Turn-off losses include also the tail of the collector current. r P e Table 8. t e l o Symbol s b O Collector-emitter diode Parameter Test conditions Min Typ. Max Unit 2.1 V V VF Forward on-voltage IF = 7 A IF = 7 A, TC= 125 °C 1.8 1.3 trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 7 A, VR = 40 V, di/dt = 100 A/µs (see Figure 5) 37 40 2.1 ns nC A trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 7 A, VR = 40 V, TC= 125 °C, di/dt = 100 A/µs (see Figure 5) 61 98 3.2 ns nC A 5/11 Test circuit STGF14N60D, STGP14N60D 3 Test circuit Figure 2. Test circuit for inductive load switching Figure 3. Gate charge test circuit AM01504v1 Figure 4. Switching waveforms c u d Figure 5. Diode recovery times waveform e t le di/dt 90% 10% VG IF so 90% VCE Tcross 90% IC 10% Td(off) Td(on) ) s ( ct Tf Tr(Ion) Toff Ton u d o r P e t e l o s b O 6/11 b O - 10% Tr(Voff) AM01506v1 ) s t( AM01505v1 o r P Qrr trr ta tb t IRRM IRRM VF di/dt AM01507v1 STGF14N60D, STGP14N60D 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O 7/11 Package mechanical data STGF14N60D, STGP14N60D TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.5 G 4.95 5.2 G1 2.4 2.7 H 10 c u d 10.4 L2 16 L3 28.6 L4 9.8 L5 2.9 L6 15.9 L7 9 Dia 3 ) s ( ct e t le A r P e o r P ) s t( 30.6 10.6 3.6 so 16.4 b O - 9.3 3.2 L7 E u d o B D Dia t e l o s b O Max. L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_J 8/11 STGF14N60D, STGP14N60D Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 0.050 16.40 28.90 3.75 2.65 ) s ( ct Max 0.181 0.034 0.066 0.027 0.62 3.85 2.95 0.147 0.104 P e let ro c u d 0.645 1.137 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 ) s t( 0.151 0.116 o s b O - u d o r P e t e l o s b O 9/11 Revision history 5 STGF14N60D, STGP14N60D Revision history Table 9. Document revision history Date Revision 20-Feb-2009 1 Changes Initial release. c u d e t le ) s ( ct u d o r P e t e l o s b O 10/11 o s b O - o r P ) s t( STGF14N60D, STGP14N60D Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ) s t( Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. c u d No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. e t le o r P UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. o s b O - UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. ) s ( ct u d o Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. r P e t e l o ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. bs The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. O © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 11/11