STGF15H60DF

STGB15H60DF, STGF15H60DF, STGP15H60DF Datasheet Trench gate field-stop IGBT, H series 600 V, 14 A high speed Features TAB 3 1 D2 PAK 1 2 3 TO-220FP TAB 1 2 3 • • • • • • High speed switching Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated Ultrafast soft recovery antiparallel diode TO-220 Applications C(2, TAB) • • Motor control UPS, PFC G(1) Description E(3) NG1E3C2T These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGB15H60DF STGF15H60DF STGP15H60DF DS9881 - Rev 3 - April 2019 For further information contact your local STMicroelectronics sales office. www.st.com STGB15H60DF, STGF15H60DF, STGP15H60DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VCES IC ICP (2) VGE Parameter Value D2PAK, TO-220FP TO-220 Collector-emitter voltage (VGE = 0 V) 600 V Continuous collector current at TC = 25 °C 30 30 (1) Continuous collector current at TC = 100 °C 15 15 (1) Pulsed collector current 60 60 Gate-emitter voltage Unit ±20 A A V Continuous forward current TC = 25 °C 30 30 (1) Continuous forward current at TC = 100 °C 15 15 (1) IFP (2) Pulsed forward current 60 60 A VISO Insulation withstand voltage (RMS) from all three leads to external heat sink 2500 V 30 W IF A (t = 1 s; Tc = 25 °C) PTOT Total power dissipation at TC = 25 °C TSTG Storage temperature range -55 to 150 Operating junction temperature range -55 to 175 TJ 115 °C 1. Limited by maximum junction temperature. 2. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol DS9881 - Rev 3 Parameter Value D2PAK, TO-220 TO-220FP Unit RthJC Thermal resistance junction-case IGBT 1.3 5 °C/W RthJC Thermal resistance junction-case diode 2.78 6.25 °C/W RthJA Thermal resistance junction-ambient 62.5 62.5 °C/W page 2/24 STGB15H60DF, STGF15H60DF, STGP15H60DF Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified. Table 3. Static Symbol V(BR)CES Parameter Collector-emitter breakdown voltage Test conditions VGE = 0 V, IC = 2 mA Min. VGE = 15 V, IC = 15 A Gate threshold voltage ICES Collector cut-off current IGES Gate-emitter leakage current VCE = VGE, IC = 1 mA V 1.8 TJ = 175 °C VGE(th) 2.0 1.7 TJ = 125 °C Unit V 1.6 VGE = 15 V, IC = 15 A VCE(sat) Max. 600 VGE = 15 V, IC= 15 A Collector-emitter saturation voltage Typ. 5.0 6.0 VCE = 600 V VGE = 0 V VGE = ±20 V VCE = 0 V 7.0 V 25 μA ±250 nA Max. Unit - pF - nC Max. Unit Table 4. Dynamic Symbol Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V Min. Typ. 1952 - 78 45 Qg Total gate charge VCC = 480 V, IC = 15 A, Qge Gate-emitter charge Qgc Gate-collector charge VGE = 0 to 15 V (see Figure 33. Gate charge test circuit) 81 - 8 42 Table 5. Switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on DS9881 - Rev 3 Parameter Test conditions Min. Typ. Turn-on delay time VCE = 400 V, IC = 15 A, 24.5 Current rise time RG = 10 Ω, VGE = 15 V (see Figure 32. Test circuit for inductive load switching and Figure 34. Switching waveform) 8.2 Turn-on current slope ns 1470 Turn-on delay time VCE = 400 V, IC = 15 A, 25 Current rise time RG = 10 Ω, VGE = 15 V 9 Turn-on current slope TJ = 175 °C (see Figure 32. Test circuit for inductive load switching and Figure 34. Switching waveform) 1370 A/μs ns A/μs page 3/24 STGB15H60DF, STGF15H60DF, STGP15H60DF Electrical characteristics Symbol Parameter Test conditions Min. Typ. tr(Voff) Off voltage rise time VCE = 400 V, IC = 15 A, 18 td(off) Turn-off delay time RG = 10 Ω, VGE = 15 V (see Figure 32. Test circuit for inductive load switching and Figure 34. Switching waveform) 118 tf Current fall time Off voltage rise time VCE = 400 V, IC = 15 A, 27 td(off) Turn-off delay time RG = 10 Ω, VGE = 15 V 124 tf Current fall time TJ = 175 °C (see Figure 32. Test circuit for inductive load switching and Figure 34. Switching waveform) 101 tsc Short-circuit withstand time RG = 10 Ω Unit - ns 69 tr(Voff) VCC ≤ 360 V, VGE = 15 V, Max. 3 5 - μs Min. Typ. Max. Unit - μJ Typ. Max. Unit 1.8 2.2 Table 6. Switching energy (inductive load) Symbol Parameter Test conditions (1) Turn-on switching energy VCE = 400 V, IC = 15 A, 136 Eoff (2) Turn-off switching energy 207 Eon Total switching energy RG = 10 Ω, VGE = 15 V (see Figure 32. Test circuit for inductive load switching) (1) Turn-on switching energy VCE = 400 V, IC = 15 A, Eoff (2) Turn-off switching energy RG = 10 Ω, VGE = 15 V 329 Total switching energy TJ = 175 °C (see Figure 32. Test circuit for inductive load switching) 553 Ets Eon Ets 343 - 224 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. Table 7. Collector-emitter diode Symbol Test conditions IF = 15 A Min. VF Forward on-voltage trr Reverse recovery time Vr = 60 V; IF = 15 A; 103 ns Qrr Reverse recovery charge 128 nC Irrm Reverse recovery current diF/dt = 100 A / μs (see Figure 35. Diode reverse recovery waveform) 2.5 A trr Reverse recovery time Vr = 60 V; IF = 15 A; 182 ns Qrr Reverse recovery charge diF/dt = 100 A / μs 437 nC Reverse recovery current TJ = 175 °C (see Figure 35. Diode reverse recovery waveform) 4.8 A Irrm DS9881 - Rev 3 Parameter IF = 15 A, TJ = 175 °C - - 1.3 V page 4/24 STGB15H60DF, STGF15H60DF, STGP15H60DF Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature for D2PAK and TO-220 GIPD041020131126FSR Ptot (W) Figure 2. Collector current vs case temperature for D2PAK and TO-220 120 30 100 25 80 20 60 15 40 10 20 5 0 0 50 25 75 100 125 150 175 TC(°C) Figure 3. Power dissipation vs case temperature for TO-220FP GIPD151020131527SA Ptot (W) GIPD011020131132FSR IC (A) 0 0 VGE ≥ 15V, T J ≤ 175 °C 50 25 75 100 125 150 175 TC(°C) Figure 4. Collector current vs case temperature for TO-220FP GIPD151020131600SA IC (A) 16 30 12 20 8 10 4 0 0 50 100 150 TC(°C) Figure 5. Output characteristics (TJ = 25°C) IC (A) 40 GIPD041020131136FSR 11V VGE=15V 9V 35 IC (A) 40 25 20 20 15 15 10 10 1 2 3 4 VCE(V) 100 150 TC(°C) GIPD041020131142FSR 11V VGE=15 V 9V 35 25 7V 50 Figure 6. Output characteristics (TJ = 175°C) 30 0 0 DS9881 - Rev 3 0 0 30 5 VGE ≥ 15V, T J ≤ 175 °C 5 0 0 7V 1 2 3 4 VCE (V) page 5/24 STGB15H60DF, STGF15H60DF, STGP15H60DF Electrical characteristics (curves) Figure 7. VCE(sat) vs junction temperature GIPD041020131148FSR VCE(sat) (V) 2.4 VGE= 15V Figure 8. VCE(sat) vs collector current GIPD041020131152FSR VCE(sat) (V) 2.2 TJ= 175°C VGE= 15V 2.4 IC= 30A 2.2 2.0 TJ= 25°C 2.0 IC= 15A 1.8 1.8 1.6 1.6 TJ= -40°C IC= 10A 1.4 1.4 1.2 -50 0 50 100 150 TJ(°C) Figure 9. Collector current vs switching frequency for D2PAK and TO-220 GIPD161020130955SA Ic [A] 40 1.2 0 5 10 15 20 25 30 IC(A) Figure 10. Collector current vs switching frequency for TO-220FP GIPD161020130958SA Ic [A] 20 Tc=80°C Tc=80°C Tc=100 °C 30 15 10 20 10 0 Tc=100 °C 5 Rectangular current shape, (duty cycle = 0.5, VCC = 400 V, RG = 4,7 Ω VGE = 0/15 V, TJ = 175 °C rectangular current shape, (duty cycle=0.5, VCC = 400V, RG=4.7 Ω, VGE = 0/15 V, TJ =175°C) 0 1 f [kHz] 10 Figure 11. Forward bias safe operating area for D2PAK and TO-220 GIPD211020131342FSR IC (A) 1 f [kHz] 10 Figure 12. Forward bias safe operating area for TO-220FP GIPD211020131350FSR IC (A) 10 µs 10 10 10 µs 100 µs 100 µs 1 1 0.1 DS9881 - Rev 3 Single pulse Tc= 25°C, TJ