STGF17NC60SD
17 A, 600 V fast IGBT with Ultrafast diode
Datasheet − production data
Features
■
Very low on-voltage drop (VCE(sat))
■
Minimum power losses at 5 kHz in hard
switching
■
Optimized performance for medium operating
frequencies
■
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IGBT co-packaged with Ultrafast freewheeling
diode
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TO-220FP
Application
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Electronic light dimmer
Description
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Figure 1.
This high voltage and fast IGBT shows an
excellent compromise between low conduction
loss and fast switching performance. It is
designed in PowerMESH™ technology combined
with Ultrafast diode.
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Internal schematic diagram
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Table 1.
Device summary
Order code
Marking
Package
Packaging
STGF17NC60SD
GF17NC60SD
TO-220FP
Tube
November 2012
This is information on a product in full production.
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www.st.com
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Electrical ratings
1
STGF17NC60SD
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
Collector-emitter voltage (VGE = 0)
600
V
IC
(1)
Continuous collector current at TC = 25°C
17
A
IC
(1)
Continuous collector current at TC = 100°C
11
A
ICP (2)
Pulsed collector current
80
A
(3)
Turn-off latching current
80
Diode RMS forward current at TC = 25°C
20
VCES
ICL
IF
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IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
VGE
Gate-emitter voltage
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink
(t = 1 s; TC = 25°C)
PTOT
Total dissipation at TC = 25°C
Tj
Operating junction temperature
50
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A
A
A
±20
V
2500
V
32
W
- 55 to 150
°C
1. Calculated according to the iterative formula
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Tj ( max ) – TC
IC ( T C ) = ------------------------------------------------------------------------------------------------------Rthj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) )
2. Pulse width limited by maximum junction temperature and turn-off within RBSOA
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3. Vclamp = 80% of VCES, Tj = 150 °C, RG = 10 Ω, VGE = 15 V
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Table 3.
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Symbol
Rthj-c
Rthj -a
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Thermal data
Parameter
Value
Unit
Thermal resistance junction-case IGBT
3.9
°C/W
Thermal resistance junction-case diode
5.5
°C/W
Thermal resistance junction-ambient
62.5
°C/W
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STGF17NC60SD
2
Electrical characteristics
Electrical characteristics
Tj = 25°C unless otherwise specified.
Table 4.
Static
Symbol
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE= 0)
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 250 µA
ICES
Collector cut-off current
(VGE = 0)
VCE = 600 V
VCE = 600 V, Tj =125°C
IGES
Gate-emitter leakage
current (VCE = 0)
VGE = ±20 V, VCE = 0
Forward transconductance
VCE = 15 V, IC = 12 A
Symbol
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Input capacitance
Output capacitance
Reverse transfer
capacitance
Cies
Coes
Cres
Qg
Qge
Qgc
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Parameter
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Table 6.
Symbol
Total gate charge
Gate-emitter charge
Gate-collector charge
Max.
4.2
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Test conditions
Unit
V
1.55
1.35
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Dynamic
Typ.
600
VGE = 15 V, IC = 12 A
Collector-emitter saturation
VGE = 15 V, IC = 12 A,
voltage
Tj =125°C
Table 5.
O
IC = 1 mA
VCE(sat)
gfs
bs
Min.
1.9
V
V
6.2
V
150
1
µA
mA
±100
nA
10
S
Min.
Typ.
Max.
Unit
VCE = 25 V, f = 1 MHz,
VGE = 0
-
1190
135
28.5
-
pF
pF
pF
VCE = 480 V, IC = 12 A,
VGE = 15 V, Figure 3
-
54.5
8.7
25.8
-
nC
nC
nC
Switching on/off (inductive load)
Parameter
Test conditions
Min.
Typ.
Max.
Unit
-
17.5
6.2
1870
-
ns
ns
A/µs
-
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 480 V, IC = 12 A
RG = 10 Ω, VGE = 15 V,
Figure 4
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 480 V, IC = 12 A
RG = 10 Ω, VGE= 15 V,
Tj = 125°C, Figure 4
-
17
6.5
1700
tr(Voff)
td(Voff)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 480 V, IC = 12 A
RG = 10 Ω, VGE = 15 V,
Figure 4
-
90
175
215
-
ns
ns
ns
tr(Voff)
td(Voff)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 480 V, IC = 12 A
RG = 10 Ω, VGE = 15 V,
Tj = 125°C, Figure 4
-
155
245
290
-
ns
ns
ns
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Electrical characteristics
Table 7.
STGF17NC60SD
Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon
Eoff(1)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 480 V, IC = 12 A
RG= 10 Ω, VGE= 15 V,
Figure 2
-
135
815
995
-
µJ
µJ
µJ
Eon
Eoff(1)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 480 V, IC = 12 A
RG= 10 Ω, VGE= 15 V,
Tj = 125 °C, Figure 2
-
200
1175
1375
-
µJ
µJ
µJ
1. Turn-off losses include also the tail of the collector current
Table 8.
Symbol
Parameter
Test conditions
VF
Forward on-voltage
IF = 12 A
IF = 12 A, Tj = 125 °C
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 12 A, VR =40 V,
di/dt=100 A/µs, Figure 5
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 12 A, VR =40 V,
di/dt=100 A/µs, Tj = 125 °C
Figure 5
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Collector-emitter diode
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Min.
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Typ.
Max.
Unit
2.3
2.0
V
V
31
29.5
1.9
ns
nC
A
48.5
70.5
3
ns
nC
A
STGF17NC60SD
Test circuits
3
Test circuits
Figure 2.
Test circuit for inductive load
switching
Figure 3.
Gate charge test circuit
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AM01504v1
Figure 4.
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Switching waveform
Figure 5.
bs
90%
10%
VG
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90%
VCE
(s)
Tcross
90%
10%
Tf
Tr(Ion)
Toff
Ton
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Diode recovery time waveform
Qrr
di/dt
IF
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Td(off)
Td(on)
AM01505v1
trr
ta
tb
10%
Tr(Voff)
IC
Pr
t
IRRM
IRRM
VF
dv/dt
AM01506v1
AM01507v1
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Package mechanical data
4
STGF17NC60SD
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
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Doc ID 018834 Rev 1
STGF17NC60SD
Package mechanical data
Table 9.
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
H
10
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L2
16
L3
28.6
L4
9.8
L5
2.9
L6
15.9
L7
9
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Dia
Figure 6.
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10.4
30.6
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10.6
3.6
-O
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2.7
16.4
9.3
3.2
TO-220FP drawing
Pr
L7
E
A
B
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Dia
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L5
L6
F1
F2
F
G
H
G1
L4
L2
L3
7012510_Rev_K
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Revision history
5
STGF17NC60SD
Revision history
Table 10.
Document revision history
Date
Revision
14-Nov-2012
1
Changes
First release
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Please Read Carefully:
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