STGF20NB60S

STGF20NB60S PowerMESH™ IGBT, S series 600 V, 13 A low drop Datasheet - production data Features   Low on-voltage drop (VCE(sat)) High current capability Applications    3 1 2 Light dimmer Static relays Motor control Description TO-220FP Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performance. The suffix “S” represents a series optimized to achieve minimum on-voltage drop for low frequency applications. Figure 1: Internal schematic diagram Table 1: Device summary Order code Marking Package Packing STGF20NB60S GF20NB60S TO-220FP Tube December 2015 DocID9910 Rev 4 This is information on a product in full production. 1/14 www.st.com Contents STGF20NB60S Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 5 2/14 TO-220FP package information ...................................................... 11 Revision history ............................................................................ 13 DocID9910 Rev 4 STGF20NB60S 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0 V) 600 V VECS Emitter-collector voltage (VGE = 0 V) -20 V VGE Gate-emitter voltage ±20 V Continuous collector current at TC = 25 °C 24 Continuous collector current at TC = 100 °C 13 ICL Turn-off latching current 70 A ICM(1) Pulsed collector current 70 A PTOT Total dissipation at TC = 25 °C 40 W VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) 2.5 kV TSTG Storage temperature range -55 to 150 °C Value Unit IC TJ Operating junction temperature A Notes: (1)Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case 3.1 Rthj-amb Thermal resistance junction-ambient 62.5 DocID9910 Rev 4 °C/W 3/14 Electrical characteristics 2 STGF20NB60S Electrical characteristics TC = 25 °C unless otherwise specified Table 4: Static characteristics Symbol Parameter Test conditions Min. V(BR)CES Collector-emitter breakdown voltage VGE = 0 V, IC = 250 µA 600 V(BR)ECS Emitter-collector breakdown voltage VGE = 0 V, IC = 10 mA Typ. Max. Unit V -20 VGE = 0 V, VCE = 600 V 10 ICES Collector cut-off current VGE = 0 V, VCE = 600 V, TC = 125 °C 100 IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±100 nA VGE(th) Gate threshold voltage VCE = VGE, IC = 250 µA 5 V VCE(sat) Collector-emitter saturation voltage 2.5 VGE = 15 V, IC = 20 A 1.25 VGE = 15 V, IC = 20 A, TJ = 150 °C 1.2 µA 1.7 V Table 5: Dynamic characteristics Symbol Parameter Test conditions gfs(1) Forward transconductance Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge VCE = 10 V, IC = 8 A VCE= 25 V, f = 1 MHz, VGE = 0 V VCC = 480 V, IC = 20 A, VGE = 15 V (see Figure 17: "Gate charge test circuit") Min. Typ. Max. Unit - 20 - S - 1820 - - 167 - - 27 - - 83 115 - 10 - - 27 - pF nC Notes: (1)Pulse duration= 300 μs, duty cycle 1.5 % Table 6: Inductive load switching on characteristics Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on 4/14 Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Test conditions Min. Typ. Max. Unit VCC = 480 V, IC = 20 A, VGE = 15 V, RG = 100 Ω (see Figure 16: "Test circuit for inductive load switching") - 92 - ns - 70 - ns - 340 - A/µs VCC = 480 V, IC = 20 A, VGE = 15 V, RG = 100 Ω, Tj = 125 °C (see Figure 16: "Test circuit for inductive load switching") - 80 - ns - 73 - ns - 320 - A/µs DocID9910 Rev 4 STGF20NB60S Electrical characteristics Table 7: Inductive load switching off characteristics Symbol tc Parameter Cross-over time tr(Voff) Off voltage rise time td(off) Turn-off delay time tf Current fall time tc Cross-over time tr(Voff) Off voltage rise time td(off) Turn-off delay time tf Current fall time Test conditions Min. Typ. Max. - 1.6 - - 0.8 - - 1.1 - - 0.8 - - 2.4 - - 1.1 - - 2.4 - - 1.2 - Min. Typ. Max. VCC = 480 V, IC = 20 A, VGE = 15 V, RG = 100 Ω (see Figure 18: "Switching waveform") - 0.84 - - 7.4 - - 8.24 - VCC = 480 V, IC = 20 A, VGE = 15 V, RG = 100 Ω, Tj = 125 °C (see Figure 18: "Switching waveform") - 0.86 - - 11.5 - - 12.36 - VCC = 480 V, IC = 20 A, VGE = 15 V, RG = 100 Ω (see Figure 16: "Test circuit for inductive load switching") VCC = 480 V, IC = 20 A, VGE = 15 V, RG = 100 Ω, Tj = 125 °C (see Figure 16: "Test circuit for inductive load switching") Unit ns ns Table 8: Inductive load switching loss characteristics Symbol Parameter Eon(1) Turn-on switching loss Eoff(2) Turn-off switching loss Ets Total switching loss Eon (1) Turn-on switching loss Eoff (2) Turn-off switching loss Ets Total switching loss Test conditions Unit mJ mJ Notes: (1)E on is the turn-on loss when a external diode is used in the test circuit in Figure 16: "Test circuit for inductive load switching". (2)Turn-off loss includes the tail of the collector current. DocID9910 Rev 4 5/14 Electrical characteristics 2.1 6/14 STGF20NB60S Electrical characteristics (curves) Figure 2: Output Characteristics Figure 3: Transfer Characteristics Figure 4: Transconductance Figure 5: Normalized collector-emitter on voltage vs temperature Figure 6: Collector-Emitter on voltage vs collector current Figure 7: Normalized gate threshold vs temperature DocID9910 Rev 4 STGF20NB60S Electrical characteristics Figure 8: Normalized breakdown voltage vs temperature Figure 9: Gate charge vs gate-emitter voltage Figure 10: Capacitance variations Figure 11: Switching loss vs gate resistance Figure 12: Switching loss vs temperature Figure 13: Switching loss vs collector current DocID9910 Rev 4 7/14 Electrical characteristics STGF20NB60S Figure 14: Thermal impedance 8/14 DocID9910 Rev 4 Figure 15: Turn-off SOA STGF20NB60S 3 Test circuits Test circuits Figure 16: Test circuit for inductive load switching Figure 17: Gate charge test circuit VCC C A 12 V A E B B 3.3 µF C G + RG 1 kΩ 100 nF L=100 µF G 47 kΩ 1000 µF VCC Vi ≤ VGMAX D.U.T 2200 µF E IG=CONST 2.7 kΩ 100 Ω D.U.T. VG 47 kΩ PW 1 kΩ AM01504v 1 AM01505v1 Figure 18: Switching waveform DocID9910 Rev 4 9/14 Package information 4 STGF20NB60S Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/14 DocID9910 Rev 4 STGF20NB60S 4.1 Package information TO-220FP package information Figure 19: TO-220FP package outline 7012510_Rev_K_B DocID9910 Rev 4 11/14 Package information STGF20NB60S Table 9: TO-220FP package mechanical data mm Dim. Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 12/14 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID9910 Rev 4 STGF20NB60S 5 Revision history Revision history Table 10: Document revision history Date Revision 17-Dec-2004 2 New template, no content change 05-Aug-2005 3 Some values changed in table 6 4 Text and formatting changes throughout document On cover page: - updated Title, Features and Description Added Electrical ratings section heading In section Electrical ratings: - updated tables Absolute Maximum ratings and Thermal Data In section Electrical characteristics: - updated table Static characteristics Added section Package information Updated TO-220FP package information 02-Dec-2015 Changes DocID9910 Rev 4 13/14 STGF20NB60S IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 14/14 DocID9910 Rev 4